Design and synthesis of laser inscribed flexible Bragg gratings containing silicon oxynitride-doped silicon thin film for authentication applications with the insights from X-Ray Absorption Spectroscopy and Quantum Mechanical Calculations
Silicon-on-insulator is mostly the main driving material system for the field of silicon photonics, including PICs, due to high index contrast and compatibility with current semiconductor manufacturing processes [1]. A recent example is silicon oxynitride-doped silicon [2] discovered recently by our group, offering to set a new position for the fields of silicon photonics with a precise control of refractive index from 2.1 to 2.5 together with the photosensitivity property at different wavelengths. In this study, we demonstrate that the synthesis of silicon oxynitride-doped silicon can be performed on a flexible substrate for the fabrication of Bragg gratings (BG) at low temperatures below 100 degrees Celsius that are emerging for advanced applications. Their use in preserving ultra-fast lasers inscribed micro-information has been demonstrated numerically and experimentally due to its multispectral reflection behaviour from the ultraviolet (UV) to the near-infrared (NIR) regions. The unique structural characteristics of silicon oxynitride-doped silicon were studied at the Si L, O K and N K edges using soft X-ray absorption studies. The quantum mechanical calculations provide the potential formation mechanism of SiON-doped Si, whereas the crystal structure prediction for bulk Si3N4-xOx was conducted using the particle swarm optimization method in combination with density functional theory (DFT).