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arXiv subjects

Ulrich Kentsch

Publications and source records attributed to Ulrich Kentsch.

At least 19 recordsLinked to original sources

A fully integrated dispersion-managed femtosecond mode-locked laser

Femtosecond lasers underpin applications ranging from material processing to corneal surgery, while their regular pulse trains form optical frequency combs that have revolutionized timekeeping, spectroscopy, and metrology. On-chip optical frequency combs, such as Kerr microcombs, have enabled high-repetition-rate applications in optical communications and microwave photonics. However, integrated chip-scale sources operating at low repetition rates (100 MHz to 1 GHz), crucial for high peak intensities, remain elusive, as existing devices typically operate well beyond 10 GHz. Here, we demonstrate a self-starting, photonic integrated mode-locked laser based on a dispersion-managed architecture that accesses this regime. The laser combines erbium-implanted silicon nitride gain waveguides, integrated chirped Bragg gratings, and a semiconductor saturable absorber mirror to generate optical pulses with repetition rates from 0.5 to 1.2 GHz, pulse durations as short as 300 fs, and mode-locking thresholds down to 27.3 mW. The output forms a passively stable optical frequency comb with a comb-line drift below 1% of the repetition rate, surpassing the stability of commercial fiber lasers by two orders of magnitude. Leveraging this ultra-low threshold, we achieve complete hybrid integration by co-packaging the laser with a telecom-grade 980-nm III-V pump diode chip inside a compact photonic module. The resulting electrical-in/optical-out module delivers turnkey, stable mode-locked pulses, providing a compact, low-power, and vibration-insensitive foundry-compatible platform for field-deployable optical metrology and precision sensing.

physics.optics

Detecting Magnetic Phase Transitions in Ion-Irradiated CrSBr Through Resonant Raman Scattering

Controlling magnetic phases and accurately determining their transition temperatures are essential for the development of low-dimensional magnetic materials. Here, we demonstrate that He$^+$ ion irradiation provides a versatile route for engineering magnetic phases in layered CrSBr and establish temperature-dependent polarization-resolved Raman spectroscopy as a sensitive optical probe for identifying irradiation-induced magnetic phase transitions. We reveal that the magnetic response of the modified CrSBr is governed by both irradiation dose and crystal thickness. The temperature evolution of the Raman tensor elements resolves the antiferromagnetic transition in pristine CrSBr at T$_N \approx 132$ K as well as irradiation-induced magnetic transitions at T$_C \approx 105-110$ K and T$_D \approx 40$ K corresponding to ferromagnetic and defect-related magnetic phase transitions. Complementary magneto-optical measurements confirm the progressive suppression of antiferromagnetic order and the emergence of new defect-engineered magnetic phases, including pure ferromagnetic behavior at high irradiation doses. These findings establish irradiated CrSBr as a platform for controllable magnetic phase engineering while demonstrating polarization-resolved Raman spectroscopy as a rapid, non-destructive, and broadly applicable method for probing magnetic phase transitions in van der Waals magnets.

cond-mat.mtrl-sci

Structural and Optical Characteristics of $β-Ga_2O_3$ Implanted with Rare Earth Ions

We investigated the structural evolution and optical properties of $β-Ga_2O_3$ crystals implanted with different rare-earth (RE) ions using channeling Rutherford Backscattering Spectrometry, Positron Annihilation, Photoluminescence, and Photoluminescence Excitation spectroscopies. The studies reveal that implantation-induced disorder, accompanying phase transitions, and post-annealing structural recovery are largely insensitive to the implanted RE species. The defect microstructure is also found to be similar for all implanted RE ions. Thermal annealing does not completely remove radiation-induced defects but instead drives their rearrangement into larger defect complexes. Unimplanted (virgin) $β-Ga_2O_3$ exhibits strong UV-visible emission attributed to oxygen vacancies, whereas the introduction of RE ions produces additional emission lines originating from electronic transitions within RE3+ ions. The results indicate that RE3+ ions are excited through the host conduction band, followed by non-radiative relaxation to the 4f excited states and radiative decay to the respective ground states. Fluence-dependent studies of Yb3+ reveal the onset of concentration quenching, while RE-related emission remains efficient even in the presence of substantial lattice disorder. These findings provide new insight into defect evolution in ion-implanted beta-Ga2O3 and clarify the excitation mechanisms of RE3+ ions, offering guidance for optimizing the optical performance of $β-Ga_2O_3$:RE materials.

cond-mat.mtrl-sci

From phase transformation to amorphization: damage accumulation in Yb-implanted $β-Ga_2O_3$

This study provides a comprehensive analysis of the radiation response and structural evolution of differently oriented$β-Ga_2O_3$ single crystals subjected to Yb ion implantation over a wide fluence range from $5 \times 10^{12}$ to $1 \times 10^{16}$~cm$^{-2}$ ($0.04$--$74$~dpa). A multi-technique approach (RBS/c, PAS, HRTEM, and HRXRD) was employed to investigate the mechanisms of damage accumulation. The results reveal a multi-stage process of defect evolution. At a critical threshold of around $0.4$~dpa, the accumulation of lattice strain triggers a phase transformation from monoclinic $β$-Ga$_{2}$O$_{3}$ to a defective spinel structure of $γ$-Ga$_{2}$O$_{3}$. Notably, the formation of this new phase is accompanied by strain relaxation. With further irradiation, defects develop within the crystal structure of $γ$-Ga$_{2}$O$_{3}$. The associated atomic reorganization at this stage is reflected by a distinct dip in the damage accumulation curve and the appearance of stacking faults in the subsurface region of the implanted layer. In contrast to previous reports suggesting high radiation stability of this phase, the present study clearly demonstrates that continuous defect accumulation results in a significant increase in both displaced atoms and vacancy-type defects, with a strong depth dependence in their type and density. Ultimately, at an irradiation level of approximately $7$~dpa, the surface layer amorphizes. With further irradiation, the amorphous layer expands, gradually replacing the transient $γ$-Ga$_{2}$O$_{3}$ phase. These findings reveal that the radiation tolerance of gallium oxide is highly sensitive to ion-specific interactions and strain-induced instabilities, thereby challenging the previously assumed robustness of this material under high-fluence ion irradiation.

cond-mat.mtrl-sci

Comprehensive structural and optical analysis of differently oriented Yb-implanted $β$-Ga$_2$O$_3$

This study presents investigations of Yb-doped $β$-Ga$_2$O$_3$, an ultrawide bandgap semiconductor with potential use in future power and optoelectronic devices operating in high-radiation environments. The research has focused on the problem of structural damage caused by the implantation of Yb-ions into three differently oriented crystals and the optical response of created systems. The (001), (010), and (-201)-oriented $β$-Ga$_2$O$_3$ crystals were implanted with three different fluences of 150 keV Yb ions and examined using a variety of experimental techniques: high-resolution X-ray diffraction (HRXRD), Rutherford backscattering spectrometry in channeling mode (RBS/c), Raman and photoluminescence (PL) spectroscopies, to provide comprehensive information about studied systems. Furthermore, the RBS/c studies were supported by Monte Carlo simulations. The results show distinctions between differently oriented crystals. In particular, (010)-oriented crystals are characterized by the lowest concentration of extended defects and the presence of compressive stress. In contrast, samples with the other two orientations exhibit tensile stress and significantly higher levels of extended defects. Interestingly, the PL spectra of (010)-oriented $β$-Ga$_2$O$_3$ show the lowest emission from Yb$^{3+}$ ions, suggesting that specific types of extended defects, whose formation is more favorable in the other two orientations than in (010), enhance Yb$^{3+}$ luminescence instead of suppressing it.

cond-mat.mtrl-sci

Direct Wafer Bonding of Crystal-Ion-Sliced GaP Thin Films for Photonic Applications

Gallium phosphide (GaP) is a promising material platform for integrated photonics because of its high refractive index, broad optical transparency, and strong second-order nonlinear response. Here, we demonstrate GaP-on-insulator thin films fabricated by crystal ion slicing and direct wafer bonding, using fused silica and SiO$_2$/Si/Si thermally oxidized silicon substrates as representative platforms. Unlike GaP thin-film platforms that rely on heteroepitaxial growth or sacrificial-layer release, the presented approach enables the flexible integration of crystalline GaP thin films, independent of both donor and target substrates. Following post-transfer annealing, the films exhibit near-bulk crystalline quality with low residual strain, smooth surfaces suitable for nanophotonic fabrication, and homogeneous bonding interfaces. Furthermore, annealing restores the linear optical dispersion (n and k) approaching that of epitaxially grown GaP with estimated plane wave absorption loss of 0.9 dB/cm at 1550 nm in the telecom C-band. The demonstrated approach establishes a scalable pathway toward high-quality GaP thin-film photonics compatible with versatile heterogeneous integration and back-end-of-line CMOS processing.

physics.optics

Tailoring the properties of YBa$_{2}$Cu$_{3}$O$_{7-δ}$ thin films by 30 keV He$^+$ irradiation: An enabling route to superconducting device nanopatterning

Focused helium ion beam (He-FIB) irradiation with 30 keV ions is a key tool for nanoscale patterning and defect engineering in high transition temperature (Tc) cuprate superconducting devices, yet its usable fluence window is constrained by the competing requirements of reliable superconductivity suppression and minimal structural degradation. In this work, we provide a comprehensive dataset on the effects of large-area 30 keV He+ ion exposure on the electric transport and superconducting properties of epitaxial YBa2Cu3O7 (YBCO) thin films. X-ray diffraction shows a fluence-driven loss of crystalline order accompanied by an out-of-plane lattice expansion and an orthorhombic-to-tetragonal transition, culminating at predominant amorphization at the highest fluence of 1 x 10^16 cm^-2. Raman spectra exhibit increasing disorder while lacking signatures of oxygen depletion, indicating that irradiation mainly generates oxygen-related Frenkel defects rather than changing the carrier concentration. Consistently, with increasing fluence, the normal-state resistivity ρ_N(T) at temperature T above Tc increases strongly, while d ρ_N/d T remains nearly unchanged at moderate fluence. The suppression of Tc is accurately described by Abrikosov-Gor'kov pair breaking and reaches complete quenching of superconductivity at 4.5 x 10^15 cm^-2. The anisotropic upper critical fields decrease approximately exponentially with increasing fluence, the vortex activation energy is reduced, and the anisotropy drops, in contrast to oxygen-depleted YBCO. Hall-angle analysis confirms a nearly constant carrier density but a systematic increase in defect scattering and reduced mobility, consistent with a crossover toward the dirty limit at high fluence. These results establish quantitative fluence thresholds and a practical operational window for He-FIB nanopatterning of YBCO quantum circuits.

cond-mat.supr-con

Optical probing of phononic properties of a tin-vacancy color center in diamond

The coherence characteristics of a tin-vacancy color center (SnV) in diamond are investigated through optical means, including linewidth broadening effects and coherent population trapping (CPT) between the ground state orbital levels. Spectral analysis is required as due to the large spin-orbit splitting of the orbital ground states, thermalization between the ground states occurs at rates that are impractical to measure directly in the time domain. First, by implementing a temperature-dependent linewidth broadening measurement, including the challenging-to-measure D transition, phononic coupling coefficients are determined. These measurements are performed on an emitter with a lifetime-limited linewidth and atom-like properties, making the measurement representative for high-quality SnVs. Next, a CPT-type experiment is carried out to independently analyze thermal decoherence processes at 4 K. The spectral information is transformed into its conjugate variable time, providing picosecond resolution and revealing an orbital depolarization timescale of ${\sim30{\rm~ps}}$. Consequences of the investigated dynamics are then used to estimate spin dephasing times limited by thermal effects.

quant-ph

High-pulse-energy integrated mode-locked lasers based on a Mamyshev oscillator

Ultrafast lasers have unlocked numerous advances across science and technology: they enable corneal surgery, reveal chemical reaction dynamics, and underpin optical atomic clocks. Over the past decades, extensive efforts have been devoted to developing photonic integrated circuit-based mode-locked lasers that are compact, scalable, and compatible with further on-chip functionalities. Yet, existing implementations fall short of pulse energies required for their subsequent uses in nonlinear applications. In this work, we demonstrate the first mode-locked laser that overcomes this limitation in low-loss erbium-doped silicon nitride photonic integrated circuits. The laser is based on the Mamyshev oscillator architecture, which employs alternating spectral filtering and self-phase modulation for mode-locking. It delivers a 176 MHz stream of pulses with nanojoule energy, comparable to fiber lasers and surpassing previous photonic integrated sources by more than two orders of magnitude. The output pulses exhibit excellent coherence, can be linearly compressed to 147 fs and directly drive a 1.5-octave-spanning supercontinuum in an integrated waveguide. Our work establishes a new generation of high-pulse-energy photonic integrated mode-locked lasers and paves the way for their widespread adoption.

physics.optics

Structural and Optical Properties of Crystal Ion Sliced BaTiO$_3$ Thin Films

Barium titanate (BaTiO$_3$) is a compelling material for integrated photonics due to its strong electro-optic and second-order nonlinear properties. Crystal Ion Slicing (CIS) presents a scalable and CMOS-compatible route for fabricating thin BaTiO$_3$ films; however, ion implantation during CIS introduces lattice damage that can degrade structural and optical performance. In this study, we demonstrate that post-slicing thermal annealing effectively restores the structural integrity and optical quality of CIS-processed BaTiO$_3$ flakes. Raman spectroscopy confirms the recovery of crystallinity, while second-harmonic generation (SHG) microscopy reveals systematic reorientation of ferroelectric domains and restoration of the associated second-order nonlinear susceptibility tensor $X^{(2)}$. Notably, SHG signals persist even in regions with weak Raman signatures, indicating that long-range ferroelectric order can survive despite partial lattice disruption. Optical measurements show that the linear dispersion of annealed CIS flakes closely matches that of bulk BaTiO$_3$, validating their suitability for photonic integration. Together, these results qualify CIS - combined with thermal annealing - as a viable and scalable manufacturing strategy for high-quality BaTiO$_3$-on-insulator (BTOI) platforms, enabling advanced integrated photonic devices for modulation, frequency conversion, and quantum optics.

cond-mat.mtrl-sci

Highly Enhanced robust room temperature ferromagnetism in CVD-grown nano-dimensional MoS2 flakes by modifying edges and defect engineering

The alterations in the magnetic properties and electronic structure of chemical vapor deposition (CVD) grown nano-dimensional molybdenum disulfide (MoS2) after low energy ion irradiation are thoroughly investigated. The formation of pure hexagonal 2-H phase has been identified by Raman spectroscopy and X-ray diffraction (XRD). The pristine samples are irradiated by Argon (Ar) ions with low energy at different fluences. A comprehensive analysis of Raman spectroscopy data manifests the formation of lattice defects like S-vacancies across the samples after irradiation. Triangular-flake formation in the pristine sample is confirmed by field emission scanning electron microscopy (FESEM) images. After increasing irradiation fluences the big flakes commenced to fragment into smaller ones enhancing the number of edge-terminated structures. The electron probe microanalyzer (EPMA) analysis verifies the absence of any magnetic impurity. Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS) study confirm the formation of S-vacancies after irradiation. The pristine sample exhibits diamagnetic behavior at room temperature. The saturation magnetization value increases with increasing the ion irradiation fluences, and the sample irradiated with 1e15 ions/cm2 demonstrates the highest magnetization value of 4.18 emu/g. The impact of edge-terminated structure and point defects like S-vacancies to induce room-temperature ferromagnetism (RTFM) is thoroughly examined.

cond-mat.mtrl-sci

Photon emission gain in Er doped Si light emitting diodes by impact excitation

This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer from low efficiency due to mismatched energy transfer between exciton recombination and Er excitation. Here, we propose a reverse-biased Si PN junction diode where ballistically accelerated electrons induce inelastic collisions with Er ions, enabling tunable excitation via electric field modulation. Theoretical modeling reveals that photon emission gain arises from multiple impact excitations by a single electron traversing the electroluminescence region, with the gain value approximating the ratio of emission region width to electron mean free path, i.e., G = Lex/l. Experimental results show an internal quantum efficiency (IQE) of 1.84% at 78 K, representing a 20-fold enhancement over room-temperature performance. This work provides a critical foundation for on-chip integration of silicon-based communication-band lasers and quantum light sources.

physics.optics

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band gap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1-x-yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical-mechanical polishing giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1-x-yGeySnx alloys by Sn ion beam implantation into Si1-yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1-yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1-x-yGeySnx with up to 2.3 at.% incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1-yGey films by masking unstructured regions on the chip.

cond-mat.mtrl-sci

Emitter-Optomechanical Interaction in Ultra-High-Q hBN Nanocavities

Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emission spectrum for cavities with Q-factor above a threshold of 10$^4$. Similar asymmetries are not observed for cavities without $V_B^-$ centers. To explain our findings, we model the system with phonon-induced light-matter coupling based on $V_B^-$ centers, and compare to the Jaynes-Cummings model for usual emitters. Our results reveal that the multipartite interplay arises during the light-matter coupling of $V_B^-$ centers, illustrating that it is phonon-induced, rather than being caused by thermal population of phonon modes. Such emitter-optomechanical interaction between different photon ($V_B^-$ emission, cavity photonic) and phonon ($V_B^-$ phonon, cavity mechanical) modes provides a novel system to interface spin defects, photons and phonons in condensed matters.

cond-mat.mes-hall

Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing

Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently limits its scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by nearly two orders of magnitude, approaching the fundamental $T_1$ relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect electromagnetic signals in the MHz range with sub-Hz resolution. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.

quant-ph

Tripling energy storage density through order-disorder transition induced polar nanoregions in PbZrO3 thin films by ion implantation

Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order-disorder transition induced polar nanoregions (PNRs) have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 J/cm3 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities.

cond-mat.mtrl-sci

Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission

Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to $V_B^-$. Our observations are consistent with the spatial redistribution of $V_B^-$ emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using $V_B^-$ as cavity spin-photon interfaces.

cond-mat.mes-hall

A photonic platform hosting telecom photon emitters in silicon

Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.

physics.optics