Amorphous and Nanocrystalline Topological Semimetal YPtBi/W/CoFeB Heterostructures for BEOL-Compatible Spin-Orbit Torque Devices
Spin-orbit torque (SOT) devices require spin-source materials that combine efficient charge-to-spin conversion with back-end-of-line (BEOL) thermal compatibility. Here, we show that YPtBi/W/CoFeB heterostructures deposited directly on Si/SiOx remain predominantly amorphous or weakly nanocrystalline from room temperature to 400 {\deg}C while preserving a large effective damping-like SOT response. Anomalous Hall and harmonic Hall measurements, together with X-ray diffraction, cross-sectional transmission electron microscopy, X-ray reflectivity, and electron energy-loss spectroscopy, show that the response does not correlate with bulk crystallization of YPtBi. Instead, the interfacial analysis indicates that the strongest trend of the spin Hall angle is associated with the chemistry of the upper YPtBi/W boundary: the effective SOT response tracks the integrated W concentration at that YPtBi surface. Meanwhile, a two-spin source analysis shows that the Pt-W-rich interlayer provides only a small positive correction, insufficient to explain the large negative effective spin Hall angle by itself. The dominant control variable is therefore inferred to be the incorporation of W into the upper YPtBi interface, which plausibly modifies the local electronic structure of YPtBi and amplifies the stack-level response. These results provide a more physically constrained interpretation of the stack behavior and identify a BEOL-compatible route to disordered topological spin-source layers for scaled SOT memory and compute-in-memory hardware.