arXiv subjects

Tonica Valla

Publications and source records attributed to Tonica Valla.

At least 19 recordsLinked to original sources

arXiv2026

Multiple Topological States in LaAgAs2, a Failed Square-Net Semimetal

The rational design of new materials emerges as an important direction to explore new topological materials, which is based on the understanding of the correlation between crystal and electronic structures. In this paper, we perform a comprehensive study on the crystal and electronic structures in LaAgAs2 through a combination of single-crystal x-ray diffraction (XRD), quantum oscillation, and angle-resolved photoemission spectroscopy (ARPES) experimental measurements, and density functional theory (DFT) calculations. Single-crystal XRD measurements reveal that LaAgAs2 crystallizes into a HfCuSi2-derived structure with the square net distorted into cis-trans chains. Quantum oscillation measurements reveal two frequencies with small effective masses and quasi-two-dimensional (2D) characters. ARPES measurements reveal an electronic structure strikingly different from the square-net-based semimetals, such as LaAgAs2. The Fermi surface is quasi-two-dimensional (2D), with Dirac-like hole pockets at the zone center and a quasi-1D elliptical electron pocket at the zone boundary. Based on the DFT calculations, the measured electronic structure can be well understood regarding the cis-trans distortion, which transforms the two-dimensional square net-derived Dirac bands into quasi-1D trivial bands. Intriguingly, multiple topological states can be identified around the zone center, including a nontrivial Z2 topological surface state and a bulk Dirac state. Our study clarifies the impact of cis-trans distortion and identifies LaAgAs2 as a topological material with multiple topological states near the Fermi level, providing a guideline for intentionally designing new topological materials.

cond-mat.mtrl-sci↗

arXiv2025

Anisotropic electron damping and energy gap in Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$

The many body electron-electron interaction in cuprates causes the broadening of the electronic bands in \textit{\textbf{k}}-space, leading to a deviation from the standard Fermi liquid. While a \textit{\textbf{k}}-dependent anisotropic electronic scattering (\textit{\textbf{k}}-DAES) has been assessed by photoemission, its fingerprint in \textit{\textbf{Q}}-space has been scarcely considered. Here, we explore the \textit{\textbf{Q}}-dependent electron dynamics in optimally doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ through the evolution of low-energy charge excitations as measured by resonant inelastic x ray scattering (RIXS). In the normal state, the RIXS spectra display a continuum of excitations down to 0~meV, while the superconducting state features a spectral weight suppression below 80 meV without any enhancement at higher energies. To interpret the energy and \textit{\textbf{Q}}-evolution of our data, we introduce a phenomenological expression of the charge susceptibility by including the \textit{\textbf{k}}-DAES. We show that only the charge susceptibility with \textit{\textbf{k}}-DAES captures the RIXS data, highlighting the importance of \textit{\textbf{k}}-DAES when describing the \textit{\textbf{Q}}-dependence of charge excitations from 0 to few eV scale. Furthermore, we also find that the inclusion of \textit{\textbf{k}}-DAES is essential when quantitative parameters such as the electronic energy gap are extracted from RIXS data.

cond-mat.str-el↗

arXiv2025

Interplay of Kondo Physics with Incommensurate Charge Density Waves in CeTe$_3$

CeTe$_3$ is a 2--dimensional (2D) Van der Waals (VdW) material with incommensurate charge density waves (CDW), extremely high transition temperature ($T_{CDW}$) and a large momentum--dependent CDW gap that leaves a significant portion of the Fermi surface intact. It is also considered to be a weak Kondo system, a property unexpected for a material with incommensurate CDW, where each atomic site is slightly different. Here, we study the properties of the CDW state in several RTe$_3$ (R is rare earth) materials and examine the hybridization of itinerant states with the localized Ce $4f$ multiplet in CeTe$_3$ by using angle resolved photoemission spectroscopy (ARPES). We find that the renormalization of the itinerant states originating from the hybridization with the deeper localized $4f$ states at $-260$ meV is $k-$dependent and extends to the Fermi level. As these localized states are far from the Fermi level, the observed hybridization affects the effective masses only marginally and does not lead to heavy fermions. However, since the same renormalizing mechanism normally leads to the heavy fermion physics when the localized $4f$ states are near the Fermi level, our observation of its strong $k-$dependence suggests that this could be the reason for discrepancy between the heavy masses in specific heat and light ones in Shubnikov de Haas oscillations, often observed in heavy fermions.

cond-mat.str-el↗

arXiv2024

Charge Density Waves and the Effects of Uniaxial Strain on the Electronic Structure of 2H-NbSe$_2$

Interplay of superconductivity and density wave orders has been at the forefront of research of correlated electronic phases for a long time. 2H-NbSe$_2$ is considered to be a prototype system for studying this interplay, where the balance between the two orders was proven to be sensitive to band filling and pressure. However, the origin of charge density wave in this material is still unresolved. Here, by using angle-resolved photoemission spectroscopy, we revisit the charge density wave order and study the effects of uniaxial strain on the electronic structure of 2H-NbSe$_2$. Our results indicate previously undetected signatures of charge density waves on the Fermi surface. The application of small amount of uniaxial strain induces substantial changes in the electronic structure and lowers its symmetry. This, and the altered lattice should affect both the charge density wave phase and superconductivity and should be observable in the macroscopic properties.

cond-mat.str-el↗

arXiv2024

Low-Energy Electronic Structure in the Unconventional Charge-Ordered State of ScV$_6$Sn$_6$

Kagome vanadates {\it A}V$_3$Sb$_5$ display unusual low-temperature electronic properties including charge density waves (CDW), whose microscopic origin remains unsettled. Recently, CDW order has been discovered in a new material ScV$_6$Sn$_6$, providing an opportunity to explore whether the onset of CDW leads to unusual electronic properties. Here, we study this question using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). The ARPES measurements show minimal changes to the electronic structure after the onset of CDW. However, STM quasiparticle interference (QPI) measurements show strong dispersing features related to the CDW ordering vectors. A plausible explanation is the presence of a strong momentum-dependent scattering potential peaked at the CDW wavevector, associated with the existence of competing CDW instabilities. Our STM results further indicate that the bands most affected by the CDW are near vHS, analogous to the case of {\it A}V$_3$Sb$_5$ despite very different CDW wavevectors.

cond-mat.str-el↗

arXiv2024

Shallow core levels, or how to determine the doping and $T_c$ of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ and Bi$_{2}$Sr$_2$CuO$_{6+\delta}$ without cooling

Determining the doping level in high-temperature cuprate superconductors is crucial for understanding the origin of superconductivity in these materials and for unlocking their full potential. However, accurately determining the doping level remains a significant challenge due to a complex interplay of factors and limitations in various measurement techniques. In particular, in Bi$_{2}$Sr$_2$CuO$_{6+\delta}$ and Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$, where the mobile carriers are introduced by non-stoichiometric oxygen $\delta$, the determination has been extremely problematic. Here, we study the doping dependence of the electronic structure of these materials in angle-resolved photoemission and find that both the doping level, $p$, and the superconducting transition temeprature, $T_c$ can be precisely determined from the binding energy of the Bi $5d$ core-levels. The measurements can be performed at room temperature, enabling the determination of $p$ and $T_c$ without cooling the samples. This should be very helpful for further studies of these materials.

cond-mat.supr-con↗

arXiv2024

Electronic structure-property relationship in an Al0.5TiZrPdCuNi high-entropy alloy

The valence band (VB) structure of an Al0.5TiZrPdCuNi high-entropy alloy (HEA) obtained from X-ray photoelectron spectroscopy has been compared to that recently calculated by Odbadrakh et al, 2019. Both experimental and theoretical VBs show split-band structures typical of alloys composed from the early (TE) and late (TL) transition metals. Accordingly, several properties of this alloy (both in the glassy and crystalline state) associated with the electronic structure (ES), are compared with those of similar TE-TL alloys. The comparison shows in addition to the usual dependence on the total TL content strong effect of alloying with Al on the density of states at the Fermi level, N(EF) and on the magnetic susceptibility of Al0.5TiZrPdCuNi HEA, which is like that of conventional glassy alloys, such as Zr-Cu-Al ones. Despite some similarity between the shapes of theoretical and corresponding experimental VBs there are significant quantitative differences between them which should be taken into account in any future studies of ES in HEAs and other compositionally complex alloys (CCA).

cond-mat.mtrl-sci↗

arXiv2023

Coexistence of Dirac fermion and charge density wave in square-net-based semimetal LaAuSb2

We report a comprehensive study of magnetotransport properties, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations on self-flux grown LaAuSb$_2$ single crystals. Resistivity and Hall measurements reveal a charge density wave (CDW) transition at 77 K. MR and de Haas-Van Alphen (dHvA) measurements indicate that the transport properties of LaAuSb$_2$ are dominated by Dirac fermions that arise from Sb square nets. ARPES measurements and DFT calculations reveal an electronic structure with a common feature of the square-net-based topological semimetals, which is in good agreement with the magnetotransport properties. Our results indicate the coexistence of CDW and Dirac fermion in LaAuSb$_2$, both of which are linked to the bands arising from the Sb-square net, suggesting that the square net could serve as a structural motif to explore various electronic orders.

cond-mat.mtrl-sci↗

arXiv2023

Electronic structure, magnetic and transport properties of antiferromagnetic Weyl semimetal GdAlSi

We report the topological electronic structure, magnetic, and magnetotransport properties of a noncentrosymmetric compound GdAlSi. Magnetic susceptibility shows an antiferromagnetic transition at $T_\mathrm{N}$ = 32 K. In-plane isothermal magnetization exhibits an unusual hysteresis behavior at higher magnetic field, rather than near zero field. Moreover, the hysteresis behavior is asymmetric under positive and negative magnetic fields. First-principles calculations were performed on various magnetic configurations, revealing that the antiferromagnetic state is the ground state, and the spiral antiferromagnetic state is a close competing state. The calculations also reveal that GdAlSi hosts multiple Weyl points near the Fermi energy. The band structure measured by angle-resolved photoemission spectroscopy (ARPES) shows relatively good agreement with the theory, with the possibility of Weyl nodes slightly above the Fermi energy. Within the magnetic ordered state, we observe an exceptionally large anomalous Hall conductivity (AHC) of ~ 1310 $\Omega^{-1}$cm$^{-1}$ at 2 K. Interestingly, the anomalous Hall effect persists up to room temperature with a significant value of AHC (~ 155 $\Omega^{-1}$cm$^{-1}$). Our analysis indicates that the large AHC originates from the Berry curvature associated with the multiple pairs of Weyl points near Fermi energy.

cond-mat.str-el↗

arXiv2022

Electronic and magnetic properties of the topological semimetal SmMg$_2$Bi$_2$

Dirac semimetals show nontrivial physical properties and can host exotic quantum states like Weyl semimetals and topological insulators under suitable external conditions. Here, by combining angle-resolved photoemission spectroscopy measurements (ARPES) and first-principle calculations, we demonstrate that Zintl-phase compound SmMg$_2$Bi$_2$ belongs to the close proximity to a topological Dirac semimetallic state. ARPES results show a Dirac-like band crossing at the zone-center near the Fermi level ($E_\mathrm {F}$) which is further confirmed by first-principle calculations. Theoretical studies also reveal that SmMg$_2$Bi$_2$ belongs to a $Z_2$ topological class and hosts spin-polarized states around the $E_\mathrm {F}$. Zintl's theory predicts that the valence state of Sm in this material should be Sm$^{2+}$, however we detect many Sm-4$f$ multiplet states (flat-bands) whose energy positions suggest the presence of both Sm$^{2+}$ and Sm$^{3+}$. It is also evident that these flat-bands and other dispersive states are strongly hybridized when they cross each other. Due to the presence of Sm$^{3+}$ ions, the temperature dependence of magnetic susceptibility $\chi(T)$ shows Curie-Weiss-like contribution in the low temperature region, in addition to the Van Vleck-like behaviour expected for the Sm$^{2+}$ ions. The present study will help in better understanding of the electronic structure, magnetism and transport properties of related materials.

cond-mat.str-el↗

arXiv2022

Topological electronic structure of YbMg$_2$Bi$_2$ and CaMg$_2$Bi$_2$

Zintl compounds have been extensively studied for their outstanding thermoelectric properties, but their electronic structure remains largely unexplored. Here, we present a detailed investigation of the electronic structure of the isostructural thermopower materials YbMg$_2$Bi$_2$ and CaMg$_2$Bi$_2$ using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). The ARPES results show a significantly smaller Fermi surface and Fermi velocity in CaMg$_2$Bi$_2$ than in YbMg$_2$Bi$_2$. Our ARPES results also reveal that in the case of YbMg$_2$Bi$_2$, Yb-4$f$ states reside well below the Fermi level and likely have a negligible impact on transport properties. To properly model the position of 4$f$-states, as well as the overall electronic structure, a Hubbard $U$ at the Yb sites and spin-orbit coupling (SOC) have to be included in the DFT calculations. Interestingly, the theoretical results reveal that both materials belong to a $Z_2$ topological class and host robust topological surface states around $E_\mathrm {F}$. Due to the intrinsic hole doping, the topological states reside above the Fermi level, inaccessible by ARPES. Our results also suggest that in addition to SOC, vacancies and the resulting hole doping play an important role in the transport properties of these materials.

cond-mat.mtrl-sci↗

arXiv2021

Quantum size effects, multiple Dirac cones and edge states in ultrathin Bi(110) films

The presence of inherently strong spin-orbit coupling in bismuth, its unique layer-dependent band topology and high carrier mobility make it an interesting system for both fundamental studies and applications. Theoretically, it has been suggested that strong quantum size effects should be present in the Bi(110) films, with the possibility of Dirac fermion states in the odd-bilayer (BL) films, originating from dangling $p_z$ orbitals and quantum-spin hall (QSH) states in the even-bilayer films. However, the experimental verification of these claims has been lacking. Here, we study the electronic structure of Bi(110) films grown on a high-$T_c$ superconductor, Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212) using angle-resolved photoemission spectroscopy (ARPES). We observe an oscillatory behavior of electronic structure with the film thickness and identify the Dirac-states in the odd-bilayer films, consistent with the theoretical predictions. In the even-bilayer films, we find another Dirac state that was predicted to play a crucial role in the QSH effect. In the low thickness limit, we observe several extremely one-dimensional states, probably originating from the edge-states of Bi(110) islands. Our results provide a much needed experimental insight into the electronic and structural properties of Bi(110) films.

cond-mat.mtrl-sci↗

arXiv2021

Homogeneous superconducting gap in DBCO synthesized by oxide molecular beam epitaxy

Much of what is known about high-temperature cuprate superconductors stems from studies based on two surface analytical tools, angle-resolved photoemission spectroscopy (ARPES) and spectroscopic imaging scanning tunneling microscopy (SI-STM). A question of general interest is whether and when the surface properties probed by ARPES and SI-STM are representative of the intrinsic properties of bulk materials. We find this question is prominent in thin films of a rarely studied cuprate DBCO. We synthesize DBCO films by oxide molecular beam epitaxy and study them by in situ ARPES and SI-STM. Both ARPES and SI-STM show that the surface DBCO layer is different from the bulk of the film. It is heavily underdoped, while the doping level in the bulk is close to optimal doping evidenced by bulk-sensitive mutual inductance measurements. ARPES shows the typical electronic structure of a heavily underdoped CuO2 plane and two sets of one-dimensional bands originating from the CuO chains with one of them gapped. SI-STM reveals two different energy scales in the local density of states, with one corresponding to the superconductivity and the other one to the pseudogap. While the pseudogap shows large variations over the length scale of a few nanometers, the superconducting gap is very homogeneous. This indicates that the pseudogap and superconductivity are of different origins.

cond-mat.supr-con↗

arXiv2020

Absence of a Dirac gap in ferromagnetic Cr$_x$(Bi$_{0.1}$Sb$_{0.9}$)$_{2-x}$Te$_3$

Magnetism breaks the time reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to quantum anomalous Hall effect. The most common approach of inducing ferromagnetic state is by doping magnetic 3$d$ elements into bulk of 3D topological insulators. In Cr$_{0.15}$(Bi$_{0.1}$Sb$_{0.9}$)$_{1.85}$Te$_3$, the material where the quantum anomalous Hall effect was initially discovered at temperatures much lower than the ferromagnetic transition, $T_C$, the scanning tunneling microscopy studies have reported a large Dirac gap $\sim20-100$ meV. The discrepancy between the low temperature of quantum anomalous Hall effect ($\ll T_C$) and large spectroscopic Dirac gaps ($\gg T_C$) found in magnetic topological insulators remains puzzling. Here, we used angle-resolved photoemission spectroscopy to study the surface electronic structure of pristine and potassium doped surface of Cr$_{0.15}$(Bi$_{0.1}$Sb$_{0.9}$)$_{1.85}$Te$_3$. Upon potassium deposition, the $p$-type surface state of pristine sample was turned into an $n$-type, allowing spectroscopic observation of Dirac point. We find a gapless surface state, with no evidence of a large Dirac gap reported in tunneling studies.

cond-mat.mtrl-sci↗

arXiv2019

Dirac energy spectrum and inverted band gap in metamorphic InAsSb/InSb superlattices

A Dirac-type energy spectrum was demonstrated in gapless ultra-short-period metamorphic InAsSb/InSb superlattices by angle-resolved photoemission spectroscopy (ARPES_ measurements. The Fermi velocity value 7.4x10^5 m/s in a gapless superlattice with a period of 6.2nm is in a good agreement with the results of magneto-absorption experiments. An "inverted" bandgap opens in the center of the Brillouin zone at higher temperatures and in the SL with a larger period. The ARPES data indicate the presence of a surface electron accumulation layer

cond-mat.mtrl-sci↗

arXiv2019

A New Magnetic Topological Quantum Material Candidate by Design

Magnetism, when combined with an unconventional electronic band structure, can give rise to forefront electronic properties such as the quantum anomalous Hall effect, axion electrodynamics, and Majorana fermions. Here we report the characterization of high-quality crystals of EuSn$_2$P$_2$, a new quantum material specifically designed to engender unconventional electronic states plus magnetism. EuSn$_2$P$_2$ has a layered, Bi$_2$Te$_3$-type structure. Ferromagnetic interactions dominate the Curie-Weiss susceptibility, but a transition to antiferromagnetic ordering occurs near 30 K. Neutron diffraction reveals that this is due to two-dimensional ferromagnetic spin alignment within individual Eu layers and antiferromagnetic alignment between layers - this magnetic state surrounds the Sn-P layers at low temperatures. The bulk electrical resistivity is sensitive to the magnetism. Electronic structure calculations reveal that EuSn$_2$P$_2$ might be a strong topological insulator, which can be a new magnetic topological quantum material (MTQM) candidate. The calculations show that surface states should be present, and they are indeed observed by ARPES measurements.

cond-mat.mtrl-sci↗

arXiv2018

In-situ angle-resolved photoemission spectroscopy of copper-oxide thin films synthesized by molecular beam epitaxy

Angle-resolved photoemission spectroscopy (ARPES) is the key momentum-resolved technique for direct probing of the electronic structure of a material. However, since it is very surface-sensitive, it has been applied to a relatively small set of complex oxides that can be easily cleaved in ultra-high vacuum. Here we describe a new multi-module system at Brookhaven National Laboratory (BNL) in which an oxide molecular beam epitaxy (OMBE) is interconnected with an ARPES and a spectroscopic-imaging scanning tunneling microscopy (SI-STM) module. This new capability largely expands the range of complex-oxide materials and artificial heterostructures accessible to these two most powerful and complementary techniques for studies of electronic structure of materials. We also present the first experimental results obtained using this system - the ARPES studies of electronic band structure of a La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) thin film grown by OMBE.

cond-mat.mtrl-sci↗

arXiv2017

Realization of a Type-II Nodal-Line Semimetal in Mg$_3$Bi$_2$

Nodal-line semimetals (NLSs) represent a new type of topological semimetallic beyond Weyl and Dirac semimetals in the sense that they host closed loops or open curves of band degeneracies in the Brillouin zone. Parallel to the classification of type-I and type-II Weyl semimetals, there are two types of NLSs. The conventional NLS phase, in which the two bands forming the nodal line have opposite signs for their slopes along any direction perpendicular to the nodal line, has been proposed and realized in many compounds, whereas the exotic type-II NLS is very rare. Our first-principles calculations show that Mg$_3$Bi$_2$ is a material candidate that hosts a single type-II nodal loop around $Γ$. The band crossing is close to the Fermi level and the two crossing bands have the same sign in their slopes along the radial direction of the loop, indicating the type-II nature of the nodal line. Spin-orbit coupling generates only a small energy gap ($\sim$35 meV) at the nodal points and does not negate the band dispersion of Mg$_3$Bi$_2$ that yields the type-II nodal line. Based on this prediction we have synthesized Mg$_3$Bi$_2$ single crystals and confirmed the presence of the type-II nodal lines in the material. Our angle-resolved photoemission spectroscopy (ARPES) measurements agree well with our first-principles results and thus establish Mg$_3$Bi$_2$ as an ideal materials platform for studying the exotic properties of type-II nodal line semimetals.

cond-mat.mtrl-sci↗