arXiv subjects

Tonghua Yu

Publications and source records attributed to Tonghua Yu.

5 recordsLinked to original sources

arXiv2022

Efficient hydrogen evolution reaction due to topological polarization

Materials carrying topological surface states (TSS) provide a fascinating platform for the hydrogen evolution reaction (HER). Based on systematic first-principles calculations for $A_3 B$ ($A$ = Ni, Pd, Pt; $B$ = Si, Ge, Sn), we propose that topological electric polarization characterized by the Zak phase can be crucial to designing efficient catalysts for the HER. For $A_3 B$, we show that the Zak phase takes a nontrivial value of $\pi$ in the whole (111) projected Brillouin zone, which causes quantized electric polarization charge at the surface. There, depending on the adsorption sites, the hydrogen (H) atom hybridizes with the TSS rather than with the bulk states. When the hybridization has an intermediate character between the covalent and ionic bond, the H states are localized in the energy spectrum, and the change in the Gibbs free energy ($\Delta G$) due to the H adsorption becomes small. Namely, the interaction between the H states and the substrate becomes considerably weak, which is a highly favorable situation for the HER. Notably, we show that $\Delta G$ for Pt$_3$Sn and Pd$_3$Sn are just -0.066 and -0.092 eV, respectively, which are almost half of the value of Pt.

cond-mat.mtrl-sci↗

arXiv2022

Interstitial-Electron-Induced Topological Molecular Crystals

Topological phases usually are unreachable in molecular solids, which are characteristic of weakly dispersed energy bands with a large gap, in contrast to topological materials. In this work, however, we propose that nontrivial electronic topology may ubiquitously emerge in a class of molecular crystals that contain interstitial electronic states, the bands of which are prone to be inverted with those of molecular orbitals. We provide guidelines hunt for such interstitial-electron-induced topological molecular crystals, especially in the topological insulating state. They exhibit a variety of exceptional qualities, as brought about by the intrinsic interplay of molecular crystals, interstitial electrons, and topological nature: (1) They may host cleavable surfaces along multiple orientations, with pronounced topological boundary states free from dangling bonds. (2) Strong response to moderate mechanical perturbations, whereby topological phase transition would occur under relatively low pressure. (3) Inherent high-efficiency thermoelectricity as jointly contributed by the non-parabolic band structure (therewith high thermopower), highly mobile interstitial electrons (high electrical conductivity), and soft phonons (small lattice thermal conductivity). (4) Ultralow work function owing to the active interstitial electrons. We utilize first-principles calculations to demonstrate these properties with the representative candidate K$_4$Ba$_2$[SnBi$_4$]. Our work suggests a pathway of realizing topological phases in bulk molecular systems, which may advance the interdisciplinary research between topological and molecular materials.

cond-mat.mtrl-sci↗

arXiv2021

Anisotropic superconductivity in topological crystalline metal Pb$_{1/3}$TaS$_2$ with multiple Dirac fermions

Topological crystalline metals/semimetals (TCMs) have stimulated a great research interest, which broaden the classification of topological phases and provide a valuable platform to explore topological superconductivity. Here, we report the discovery of superconductivity and topological features in Pb-intercalated transition-metal dichalcogenide Pb$_{1/3}$TaS$_2$. Systematic measurements indicate that Pb$_{1/3}$TaS$_2$ is a quasi-two-dimensional (q-2D) type-II superconductor ({\em T}$_c \approx$ 2.8 K) with a significantly enhanced anisotropy of upper critical field ($\gamma_{H_{c2}}$ = $H_{c2}^{ab}/H_{c2}^{c}$ $\approx$ 17). In addition, first-principles calculations reveal that Pb$_{1/3}$TaS$_2$ hosts multiple topological Dirac fermions in the electronic band structure. We discover four groups of Dirac nodal lines on the $k_z = \pi$ plane and two sets of Dirac points on the rotation/screw axes, which are protected by crystalline symmetries and robust against spin-orbit coupling (SOC). Dirac-cone-like surface states emerge on the (001) surface because of band inversion. Our work shows that the TCM candidate Pb$_{1/3}$TaS$_2$ is a promising arena to study the interplay between superconductivity and topological Dirac fermions.

cond-mat.supr-con↗

arXiv2020

First-Principles Design of Halide-Reduced Electrides: Magnetism and Topological Phases

We propose a design scheme for potential electrides derived from conventional materials. Starting with rare-earth-based ternary halides, we exclude halogens and perform global structure optimization to obtain thermodynamically stable or metastable phases but having an excess of electrons confined inside interstitial cavities. Then, spin-polarized interstitial states are induced by chemical substitution with magnetic lanthanides. To demonstrate the capability of our approach, we test with 11 ternary halides and successfully predict 30 stable and metastable phases of nonmagnetic electrides subject to 3 different stoichiometric categories, and successively 28 magnetic electrides via chemical substitution with Gd. 56 out of these 58 designed electrides are discovered for the first time. Two electride systems, the monoclinic $A$C ($A=$ La, Gd) and the orthorhombic $A_2$Ge ($A=$ Y, Gd), are thoroughly studied to exemplify the set of predicted crystals. Interestingly, both systems turn out to be topological nodal line electrides (TNLE) in the absence of spin-orbit coupling and manifest spin-polarized interstitial states in the case of $A=$ Gd. Our work establishes a novel computational approach of functional electrides design and highlights the magnetism and topological phases embedded in electrides.

cond-mat.mtrl-sci↗

arXiv2019

Three-dimensional entanglement on a silicon chip

Entanglement is a counterintuitive feature of quantum physics that is at the heart of quantum technology. High-dimensional quantum states offer unique advantages in various quantum information tasks. Integrated photonic chips have recently emerged as a leading platform for the generation, manipulation and detection of entangled photons. Here, we report a silicon photonic chip that uses novel interferometric resonance-enhanced photon-pair sources, spectral demultiplexers and high-dimensional reconfigurable circuitries to generate, manipulate and analyse path-entangled three-dimensional qutrit states. By minimizing on-chip electrical and thermal cross-talk, we obtain high-quality quantum interference with visibilities above 96.5% and a maximumly entangled qutrit state with a fidelity of 95.5%. We further explore the fundamental properties of entangled qutrits to test quantum nonlocality and contextuality, and to implement quantum simulations of graphs and high-precision optical phase measurements. Our work paves the path for the development of multiphoton high-dimensional quantum technologies.

quant-ph↗