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Tianxin Li

Publications and source records attributed to Tianxin Li.

8 recordsLinked to original sources

Private Speech Classification without Collapse: Stabilized DP Training and Offline Distillation

We study example-level private supervised speech classification under a practical release constraint: training may access privileged side information, but the released model must be audio-only. This setting is important because speech systems can often exploit richer side information during development, whereas deployment and release require a lightweight unimodal model with auditable privacy guarantees. Using DP-SGD on the private dataset $D_{\text{priv}}$, we identify a strong-privacy failure mode ($\epsilon \le 1$) on imbalanced tasks, where training may collapse to a near single-class predictor, a phenomenon that overall accuracy can obscure. We therefore emphasize Macro-F1, balanced accuracy, and a simple collapse diagnostic. This failure is especially problematic in our release setting because a collapsed private teacher cannot provide useful supervision for the downstream audio-only student. To address this setting under strong privacy, we propose a two-stage protocol: (i) train a (possibly multimodal) DP teacher on $D_{\text{priv}}$, and (ii) distill an audio-only student on a fixed, recording-disjoint auxiliary dataset $D_{\text{aux}}$ using one-shot offline teacher probability outputs, releasing only the student. The DP guarantee applies only to $D_{\text{priv}}$; we make no DP claim for $D_{\text{aux}}$, and privacy of the released student with respect to $D_{\text{priv}}$ follows by post-processing. We frame this setting as involving four coupled bottlenecks: speech-induced optimization instability under DP-SGD, minority-class erosion under clipping and noise, teacher over-reliance on privileged modalities unavailable at deployment, and train--deploy modality mismatch. We address them with a DP-stabilizing acoustic front-end (DSAF), minibatch-adaptive bounded loss reweighting (AW-DP), privileged-modality dropout, and offline teacher-to-student distillation.

cs.SD

Period-conscious Time-series Reconstruction under Local Differential Privacy

Periodic patterns are fundamental cues in multimedia signals and systems, including repetitive motion in video (e.g., gait cycles), rhythmic and pitch-related structure in audio, and recurring textures in image sequences. When such user-generated streams are collected from edge devices, local differential privacy (LDP) is appealing because it perturbs data before upload; however, the injected noise can corrupt spectral peaks and induce phase drift, making period estimation unreliable and degrading reconstruction quality. We propose \textbf{CPR} (\textit{Cycle and Phase Recovery}), a period-aware reconstruction framework for periodic time series under LDP. CPR performs multi-scale period probing and multi-consensus selection to suppress noise-induced spectral interference, then aggregates perturbed samples at matched within-cycle phase positions to stabilize phase alignment across cycles. To recover the underlying per-phase values, CPR combines EM-based denoising with kernel density estimation, improving robustness under tight privacy budgets. Experiments on two real-world periodic datasets demonstrate that CPR better preserves periodic structure and consistently achieves lower reconstruction error than representative LDP baselines, especially in the low-$\epsilon$ regime.

cs.MM

Bipolar doping in van der Waals semiconductor through Flexo-doping

Doping plays a key role in functionalizing semiconductor devices, yet traditional chemical approaches relying on foreign-atom incorporation suffer from doping-asymmetry, pronounced lattice disorder and constrained spatial resolution. Here, we demonstrate a physical doping technique to directly write nanoscale doping patterns into layered semiconductors (MoS2). By applying localized tensile and compressive stress via an atomic force microscopy probe, p and n type conductance are simultaneously written into the designed area with sub-100-nm resolution, as verified by spatially resolved capacitance and photocurrent experiments. Density functional theory calculations reveal strain-driven shifts of donor and acceptor levels, as large as several hundreds of meV, linking mechanical stress to semiconductor doping. Fabricated strain-engineered junction efficiently rectifies the current flow and performs logic operations with stable dynamic response. This strain-driven approach enables spatially precise doping in van der Waals materials without degrading crystallinity, offering a versatile platform for nanoscale semiconductor devices.

cond-mat.mtrl-sci

Local Detection of Enhanced Hot Electron Scattering in InSb/CdTe Heterostructure Interface

The InSb/CdTe heterojunction structure, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin-orbit coupling effect and nonreciprocal transport, which makes its suitable for spintronic devices with broad applications in logic and storage fields. However, the complex heterojunction interfaces of InSb/CdTe, composed of group III-V and group II-VI semiconductors, are prone to interdiffusion. Therefore, characterization and study of the interfacial properties of InSb/CdTe heterojunctions are crucial for the growth improvement of the InSb/CdTe material system as well as its application in the field of spintronics. In this study, a novel scanning probe microscope, called a scanning noise microscope, was applied to visualize hot electron scattering in InSb/CdTe nano-devices. The results demonstrated that the near-field signal originates from the Coulomb scattering of charged ions on electrons at the interface of the embedded layer heterojunction. This real-space, nondestructive characterization of the heterojunction interface properties offers a new tool for enhancing the performance of heterojunctions.

physics.app-ph

Edge Control of Graphene Domains Grown on Hexagonal Boron Nitride

Edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene domains on hexagonal boron nitride (h-BN) by modifying ratio of working-gases. Edge directions were determined with the help of both moir\'e pattern and atomic-resolution image obtained via atomic force microscopy measurement. It is believed that the variation on graphene edges mainly attributes to different growth rates of armchair and zigzag edges. This work demonstrated here points out a potential approach to fabricate graphene ribbons on h-BN.

cond-mat.mtrl-sci

Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches

Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.

cond-mat.mes-hall

Interference-aided spectrum fitting method for accurately film thickness determination

A new approach was proposed to accurately determine the thickness of film, especially for ultra-thin film, through spectrum fitting with the assistance of interference layer. The determination limit can reach even less than 1 nm. Its accuracy is far better than traditional methods. This determination method is verified by experiments and the determination limit is at least 3.5 nm compared with the results of AFM. Furthermore, double-interference-aided spectra fitting method is proposed to reduce the requirements of determination instruments, which allow one to determine the film thickness with a low precision common spectrometer and largely lower the cost. It is a very high precision determination method for on-site and in-situ applications, especially for ultra-thin films.

physics.optics

Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moirre patterns are observed and the sensitivity of moirre interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.05 degree. The occurrence of moirre pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm2/V.s at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.

cond-mat.mtrl-sci