arXiv subjects

Thorsten Schultz

Publications and source records attributed to Thorsten Schultz.

6 recordsLinked to original sources

arXiv2024

Surface doping of rubrene single crystals by molecular electron donors and acceptors

The surface molecular doping of organic semiconductors can play an important role in the development of organic electronic or optoelectronic devices. Single-crystal rubrene remains a leading molecular candidate for applications in electronics due to its high hole mobility. In parallel, intensive research into the fabrication of flexible organic electronics requires the careful design of functional interfaces to enable optimal device characteristics. To this end, the present work seeks to understand the effect of surface molecular doping on the electronic band structure of rubrene single crystals. Our angle-resolved photoemission measurements reveal that the Fermi level moves in the band gap of rubrene depending on the direction of surface electron-transfer reactions with the molecular dopants, yet the valence band dispersion remains essentially unperturbed. This indicates that surface electron-transfer doping of a molecular single crystal can effectively modify the near-surface charge density, while retaining good charge-carrier mobility.

cond-mat.mtrl-sci↗

arXiv2021

Two-dimensional plasmonic polarons in n-doped monolayer MoS2

We report experimental and theoretical evidence of strong electron-plasmon interaction in n-doped single-layer MoS2. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal the emergence of distinctive signatures of polaronic coupling in the electron spectral function. Calculations based on many-body perturbation theory illustrate that electronic coupling to two-dimensional (2D) carrier plasmons provides an exhaustive explanation of the experimental spectral features and their energies. These results constitute compelling evidence of the formation of plasmon-induced polaronic quasiparticles, suggesting that highly-doped transition-metal dichalcogenides may provide a new platform to explore strong-coupling phenomena between electrons and plasmons in 2D.

cond-mat.str-el↗

arXiv2021

Temperature-dependent electronic ground state charge transfer in van der Waals heterostructures

Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of states distribution of the components governs the amount of charge transfer, but a notable dependence on temperature has not yet been considered, particularly for weakly interacting systems. Here, we experimentally observe that the amount of ground state charge transfer in a van der Waals heterostructure formed by monolayer MoS2 sandwiched between graphite and a molecular electron acceptor layer increases by a factor of three when going from 7 K to room temperature. State-of-the-art electronic structure calculations of the full heterostructure that account for nuclear thermal fluctuations reveal intra-component electron-phonon coupling and inter-component electronic coupling as the key factors determining the amount of charge transfer. This conclusion is rationalized by a model applicable to multi-component van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2019

Microstructure and Elastic Constants of Transition Metal Dichalcogenide Monolayers from Friction and Shear Force Microscopy

Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural variations is of paramount importance for future applications. Here we demonstrate how grain boundaries, crystal orientation, and strain fields can unambiguously be identified with combined lateral force microscopy (LFM) and transverse shear microscopy (TSM) for CVD-grown tungsten disulfide (WS2) monolayers, on length scales that are relevant for optoelectronic applications. Further, angle-dependent TSM measurements enable us to acquire the fourth-order elastic constants of monolayer WS2 experimentally. Our results facilitate high-throughput and nondestructive microstructure visualization of monolayer TMDCs, insights into their elastic properties, thus providing an accessible tool to support the development of advanced optoelectronic devices based on such two-dimensional semiconductors.

cond-mat.mtrl-sci↗

arXiv2018

Direct observation of state-filling at hybrid tin oxide/organic interfaces

Electroluminescence (EL) spectra from hybrid charge transfer excitons at metal oxide/organic type-II heterojunctions exhibit pronounced bias-induced spectral shifts. The reasons for this phenomenon have been discussed controversially and arguments for both electric field-induced effects as well as filling of trap states at the oxide surface have been put forward. Here, we combine the results from EL and photovoltaic measurements to eliminate the disguising effects of the series resistance. For SnOx combined with the conjugated polymer MeLPPP, we find a one-to-one correspondence between the blueshift of the EL peak and the increase of the quasi-Fermi level splitting at the hybrid heterojunction, which we unambiguously assign to state filling. Our data is resembled best by a model considering the combination an exponential density of states with a doped semiconductor.

cond-mat.mtrl-sci↗

arXiv2018

Modulation of the Work Function by the Atomic Structure of Strong Organic Electron Acceptors on H-Si(111)

Advances in hybrid organic/inorganic architectures for optoelectronics can be achieved by understanding how the atomic and electronic degrees of freedom cooperate or compete to yield the desired functional properties. Here we show how work-function changes are modulated by the structure of the organic components in model hybrid systems. We consider two cyano-quinodimethane derivatives (F4-TCNQ and F6-TCNNQ), which are strong electron-acceptor molecules, adsorbed on H-Si(111). From systematic structure searches employing range-separated hybrid HSE06 functional including many body van der Waals contributions, we predict that despite their similar composition, these molecules adsorb with significantly different densely-packed geometries in the first layer, due to strong intermolecular interaction. F6-TCNNQ shows a much stronger intralayer interaction (primarily due to van der Waals contributions) than F4-TCNQ in multilayered structures. The densely-packed geometries induce a large interface-charge rearrangement that result in a work-function increase of 1.11 and 1.76 eV for F4-TCNQ and F6-TCNNQ, respectively. Nuclear fluctuations at room temperature produce a wide distribution of work-function values, well modeled by a normal distribution with {\sigma}=0.17 eV. We corroborate our findings with experimental evidence of pronounced island formation for F6-TCNNQ on H-Si(111) and with the agreement of trends between predicted and measured work-function changes.

cond-mat.mtrl-sci↗