arXiv subjects

Thomas Murray

Publications and source records attributed to Thomas Murray.

7 recordsLinked to original sources

arXiv2026

Characterization of Hydroxyls in Surface Oxide of Superconducting Tantalum and Their Mitigation in Quantum Circuits

Recently, tantalum (Ta) has gained attention in superconducting quantum circuits due to the longer coherence times achieved when replacing niobium (Nb) in capacitor pads. Previous literature shows that surface oxides that form upon ambient exposure on superconducting metals such as Ta, Al, and Nb host two-level system (TLS) defects, which are a leading source of microwave loss and decoherence. While the surface oxides of Nb and Al have been extensively studied, Ta oxides remain less well understood. Using secondary ion mass spectrometry of alpha-Ta films deposited at 300 mm wafer scale, we show for the first time that hydroxyls accumulate in the Ta suboxide region above the underlying Ta. Angle-resolved X-ray photoelectron spectroscopy shows that the surface region is dominated by Ta2O5, with sub-stoichiometric TaOx present in between the Ta2O5 and underlying Ta. The thickness of the tantalum oxide is confirmed by transmission electron microscopy. We demonstrate that [OH] incorporation can be suppressed by replacing the native oxide with an oxide formed during chemical mechanical planarization of alpha-Ta films. Our findings support the hypothesis that TLS defects are non-uniform within the oxide thickness and suggest hydroxyls as a probable molecular origin of these loss channels. Furthermore, we show the feasibility of plasma nitridization as a method to decrease hydroxyl loading on alpha-Ta surfaces. The modulation of hydroxyl content through surface engineering of alpha-Ta can enable the fabrication of more robust, high-coherence superconducting quantum circuits by addressing a potential TLS source.

cond-mat.supr-con↗

arXiv2026

Temperature-Dependent Dielectric Function of Tantalum Nitride Formed by Atomic Layer Deposition for Tunnel Barriers in Josephson Junctions

We report the dielectric functions of insulating tantalum nitride (TaN) films, deposited using atomic layer deposition (ALD) on 300 mm Si/SiO2 substrates, to demonstrate their suitability as tunnel barriers in tantalum-based Josephson junctions (JJ) for superconducting quantum circuits. The temperature-dependent ellipsometric angles were measured using ALD TaN films with nominal thicknesses of 13 nm and 25 nm at an incidence angle of 70 degrees, across photon energy ranges of 0.03 eV to 0.7 eV (80-300 K) and 0.5 eV to 6.5 eV (80-600 K). This data was used to develop a dispersion model for insulating ALD TaN films that incorporates a Tauc-Lorentz oscillator with a band gap of 1.5-1.8 eV to model the interband optical transitions. The extracted dielectric function of ALD TaN films shows an insulating behavior (mid-infrared transparency) at all temperatures and for both film thicknesses tested. ALD TaN does not exhibit infrared absorption due to free carriers, even at elevated temperatures, demonstrating its insulating nature, which is required for the tunnel barrier of the JJ in quantum applications. The results of transmission electron microscopy, including selected area electron diffraction, and X-ray diffraction are also discussed. Sputter depth-profile X-ray photoelectron spectroscopy (XPS) shows an N/Ta ratio of ~1.2 throughout the film. The lower band gap, low roughness, and thermal stability of ALD TaN compared to AlOx suggest the possibility of fabricating JJs with thicker barriers while achieving critical current densities required for qubits, better control of thickness and composition, reduced topography, and resistance to aging.

cond-mat.supr-con↗

arXiv2026

Effects of Integrated Heatsinking on Superconductivity in Tantalum Nitride Nanowires at the 300 Millimeter Scale

We report the superconducting properties of tantalum nitride (TaN) nanowires and TaN/copper (TaN/Cu) bilayer nanowires fabricated on 300 mm silicon wafers using CMOS-compatible processes. We evaluate how an integrated Cu heatsink modifies the superconducting response of TaN nanowires by improving thermal dissipation without significantly compromising key superconducting parameters. Through analysis of hysteresis in current-voltage curves, we demonstrate that Cu integration improves heat dissipation, supporting expectations of faster reset times in superconducting nanowire single-photon detectors (SNSPDs), consistent with enhanced heat transfer away from the hot spot. Using the Skocpol-Beasley-Tinkham (SBT) hotspot model, we quantify the Cu-enabled improvement in heat transfer as an approximately 100x increase in the SBT slope parameter beta and effective interfacial heat-transfer efficiency compared to TaN nanowires. The near-unity ratio of critical to retrapping current in TaN/Cu bilayer nanowires provides another evidence of efficient heat removal enabled by the integrated Cu layer. Our results show a zero-temperature Ginzburg-Landau coherence length of 7 nm and a critical temperature of 4.1 K for 39 nm thick TaN nanowires. The nanowires show <5% variation in critical dimensions, room-temperature resistance, residual resistance ratio, critical temperature, and critical current across the 300 mm wafer for all measured linewidths, demonstrating excellent process uniformity and scalability. These results indicate the trade-offs between superconducting performance and heat-sinking efficiency in TaN/Cu bilayer nanowires. They also underscore the viability of wafer-scale fabrication for fast, large-area SNSPD arrays for applications in photonic quantum computing, cosmology, and neuromorphic computing devices.

cond-mat.supr-con↗

arXiv2025

Ta-based Josephson junctions using insulating ALD TaN tunnel barriers

Josephson junctions form the core circuit element in superconducting quantum computing circuits, single flux quantum digital logic circuits, and sensing devices such as SQUIDs. Aluminum oxide has typically been used as the tunnel barrier. Its formation by exposure to low oxygen pressures at room temperature for short periods of time makes it susceptible to aging and limits the thermal budget of downstream processes. In this paper, we report the first demonstration of {\alpha}-Ta/insulating TaN/a-Ta superconductor/insulator/superconductor Josephson junctions fabricated on 300 mm wafers using CMOS-compatible processes. The junctions were fabricated on high-resistivity silicon substrates using standard processes available at 300 mm scale, including 193 nm optical lithography, ALD of TaN in a cluster tool, and chemical mechanical planarization to enable highly planar interfaces. Junction areas ranging from 0.03 um2 to 9 um2 with ALD TaN thickness between 2 nm and 7 nm were characterized. A critical current density of 76 uA/um2 was observed in junctions using 4 nm ALD TaN in the tunnel barrier. The dependence of Jc on ALD TaN layer thickness is analyzed, and the influence of junction geometry, packaging, and temperature on I-V characteristics is discussed. Junctions were retested after a period of 4 months to quantify junction aging. The potential of this novel material system and a 300 mm superconducting junction process flow to fabricate thermally and environmentally stable junctions is discussed. The vision of a Superconducting Quantum Process Design Kit for a Multi-Project Wafer program to enable rapid development and proliferation of superconducting quantum and digital digital logic systems is presented. This work represents the first step towards establishing such a Quantum Foundry, providing access to high quality qubits and single-flux quantum logic circuits at 300 mm wafer scale.

cond-mat.supr-con↗

arXiv2024

Oxidation Kinetics of Superconducting Niobium and a-Tantalum in Atmosphere at Short and Intermediate Time Scales

The integration of superconducting niobium and tantalum into superconducting quantum devices has been increasingly explored over the past few years. Recent developments have shown that two-level-systems (TLS) in the surface oxides of these superconducting films are a leading source of decoherence in quantum circuits, and understanding the surface oxidation kinetics of these materials is key to enabling scalability of these technologies. We analyze the nature of atmospheric oxidation of both niobium and a-tantalum surfaces at time scales relevant to fabrication, from sub-minute to two-week atmospheric exposure, employing a combination of x-ray photoelectron spectroscopy and transmission electron microscopy to monitor the growth of the surface oxides. The oxidation kinetics are modeled according to the Cabrera-Mott model of surface oxidation, and the model growth parameters are reported for both films. Our results indicate that niobium surface oxidation follows a consistent regime of inverse logarithmic growth for the entire time scale of the study, whereas a-Ta surface oxidation shows a clear transition between two inverse logarithmic growth regimes at time t = 1 hour, associated with the re-coordination of the surface oxide as determined by x-ray photoelectron spectroscopy analysis. Our findings provide a more complete understanding of the differences in atmospheric surface oxidation between Nb and a-Ta, particularly at short time scales, paving the way for the development of more robust fabrication control for quantum computing architectures.

cond-mat.supr-con↗

arXiv2023

Engineering of Niobium Surfaces Through Accelerated Neutral Atom Beam Technology For Quantum Applications

A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages Accelerated Neutral Atom Beam (ANAB) technology at 300 mm wafer scale. This ANAB beam is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 nm to 6 nm depending on ANAB process parameters. Modeling of variable-energy XPS data confirm thickness and compositional control of the Nb surface oxide by the ANAB process. These results correlate well with those from transmission electron microscopy and X-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times.

physics.app-ph↗

arXiv2020

Leveraging Affect Transfer Learning for Behavior Prediction in an Intelligent Tutoring System

In this work, we propose a video-based transfer learning approach for predicting problem outcomes of students working with an intelligent tutoring system (ITS). By analyzing a student's face and gestures, our method predicts the outcome of a student answering a problem in an ITS from a video feed. Our work is motivated by the reasoning that the ability to predict such outcomes enables tutoring systems to adjust interventions, such as hints and encouragement, and to ultimately yield improved student learning. We collected a large labeled dataset of student interactions with an intelligent online math tutor consisting of 68 sessions, where 54 individual students solved 2,749 problems. The dataset is public and available at https://www.cs.bu.edu/faculty/betke/research/learning/ . Working with this dataset, our transfer-learning challenge was to design a representation in the source domain of pictures obtained "in the wild" for the task of facial expression analysis, and transferring this learned representation to the task of human behavior prediction in the domain of webcam videos of students in a classroom environment. We developed a novel facial affect representation and a user-personalized training scheme that unlocks the potential of this representation. We designed several variants of a recurrent neural network that models the temporal structure of video sequences of students solving math problems. Our final model, named ATL-BP for Affect Transfer Learning for Behavior Prediction, achieves a relative increase in mean F-score of 50% over the state-of-the-art method on this new dataset.

cs.CV↗