arXiv subjects

Teng Lu

Publications and source records attributed to Teng Lu.

4 recordsLinked to original sources

arXiv2026

High-Mobility Indium Native Oxide Transistors via Liquid-Metal Printing in Air

Oxide semiconductors have emerged as common channel materials in transistors and hold promise for next-generation electronics, yet achieving high mobility typically requires costly vacuum-based techniques. Here, ultrathin (5-nm) indium native oxide (InOx) prepared by ambient-air liquid-metal printing (LMP) at low temperature (250 {\deg}C), is applied as semiconducting channel in field-effect transistor (FET). The resulting InOx is found to be polycrystalline with large lateral grains that extend vertically throughout the film thickness. InOx FETs in a transfer length method (TLM) configuration demonstrate a high conductivity mobility (uCON) of 125 cm2 V-1 s-1, with systematic analysis of contact resistance confirming potential for channel length scaling. Integration with atomic-layer-deposited (ALD) gate dielectrics further reveals excellent compatibility, for instance, InOx FET integrated with HfO2 exhibits a high field-effect mobility (uFE) of 107 cm2 V-1 s-1, an on/off current ratio (ION/IOFF) of >107, a subthreshold swing (SS) of 204 mV dec-1, a gate leakage of <10-6 A cm-2, while maintaining stable performance over 104 endurance cycles without degradation. Post-fabrication oxygen-plasma treatment is applied to achieve enhancement-mode operation and a depletion-load inverter is demonstrated, exhibiting a voltage gain of 69.8 V/V. These results demonstrate the great potential of LMP InOx as semiconducting channel in high-performance and power-efficient transistors for next-generation oxide electronics.

cond-mat.mtrl-sci↗

arXiv2024

Two Classes of Optimal Multi-Input Structures for Node Computations in Message Passing Algorithms

In this paper, we delve into the computations performed at a node within a message-passing algorithm. We investigate low complexity/latency multi-input structures that can be adopted by the node for computing outgoing messages y = (y1, y2, . . . , yn) from incoming messages x = (x1, x2, . . . , xn), where each yj , j = 1, 2, . . . , n is computed via a multi-way tree with leaves x excluding xj . Specifically, we propose two classes of structures for different scenarios. For the scenario where complexity has a higher priority than latency, the star-tree-based structures are proposed. The complexity-optimal ones (as well as their lowest latency) of such structures are obtained, which have the near-lowest (and sometimes the lowest) complexity among all structures. For the scenario where latency has a higher priority than complexity, the isomorphic-directed-rooted-tree-based structures are proposed. The latency-optimal ones (as well as their lowest complexity) of such structures are obtained, which are proved to have the lowest latency among all structures.

cs.IT↗

arXiv2022

Parity-Check Matrix Partitioning for Efficient Layered Decoding of QC-LDPC Codes

In this paper, we consider how to partition the parity-check matrices (PCMs) to reduce the hardware complexity and computation delay for the row layered decoding of quasi-cyclic low-density parity-check (QC-LDPC) codes. First, we formulate the PCM partitioning as an optimization problem, which targets to minimize the maximum column weight of each layer while maintaining a block cyclic shift property among different layers. As a result, we derive all the feasible solutions for the problem and propose a tight lower bound $\omega_{LB}$ on the minimum possible maximum column weight to evaluate a solution. Second, we define a metric called layer distance to measure the data dependency between consecutive layers and further illustrate how to identify the solutions with desired layer distance from those achieving the minimum value of $\omega_{LB}=1$, which is preferred to reduce computation delay. Next, we demonstrate that up-to-now, finding an optimal solution for the optimization problem with polynomial time complexity is unachievable. Therefore, both enumerative and greedy partition algorithms are proposed instead. After that, we modify the quasi-cyclic progressive edge-growth (QC-PEG) algorithm to directly construct PCMs that have a straightforward partition scheme to achieve $\omega_{LB} $ or the desired layer distance. Simulation results showed that the constructed codes have better error correction performance and smaller average number of iterations than the underlying 5G LDPC code.

cs.IT↗

arXiv2020

Tunable Optoelectronic Properties of WS$_2$ by Local Strain Engineering and Folding

Local strain engineering is an exciting approach to tune the optoelectronic properties of materials. Two dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDs) are particularly well suited for this purpose because they have high flexibility and they can withstand high deformations before rupture. Local strain engineering in 2D TMDs is achieved via strained wrinkles. Wrinkles on thick layers of TMDs are reported to show interesting photoluminescence enhancement due to bandgap modulation and funneling effect. However, the wrinkles in ultrathin TMDs have not been investigated because they can easily fall down to form folds in these ultrathin layers of TMDCs. Here, we have achieved both wrinkles and folds simultaneously in 1-3L WS2 using a new fabrication technique. A layer dependent reduction in surface potential is found for both folded layers and perfect pack layers due to the dominant interlayer screening effect. Strain dependent modulation in semi conductive junction properties is observed for strain induced wrinkles through current scanning. Thermo-ionic modelling suggests that the strained (1.6%) wrinkles can lower the Schottky barrier height (SBH) by 20%. Upon illumination, SBH reduces significantly due to photo-generated carriers. Our results present an important advance towards controlling the optoelectronic properties of atomically thin WS2 via strain engineering, with applications in optoelectronics, quantum optics and nanophotonics device fabrication.

physics.optics↗