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Tejasvi Das

Publications and source records attributed to Tejasvi Das.

2 recordsLinked to original sources

Analog Pin Directionality as an Exfiltration Attack Surface in Mixed-Signal ICs

Mixed-signal SoCs rely on nominally input-only analog pins to acquire off-chip signals, but the directionality of these interfaces is generally treated as a functional property rather than explicitly verified as a security property. This work identifies and experimentally demonstrates a directionality-based class of analog and mixed-signal (AMS) exfiltration attacks in which data-dependent circuit-offset modulation converts a nominally input-only pin into an outbound information channel. We analytically model the attack mechanism and identify three enabling host conditions: a closed-loop amplifier, an exposed amplifier input, and sufficiently high impedance at that pin. This attack class is validated through a representative silicon case study using a photoplethysmography (PPG) analog front-end (AFE) fabricated in a commercial 55-nm CMOS process. The payload incurs $<$0.001\% area overhead relative to typical biosensing AFEs. Under the evaluated conditions, payload activation reduces the filtered PPG-output SNR by only 0.03~dB, while the maximum HT-induced perturbation of 5.9\% of the PPG amplitude remains within the 34.3\% benign variation at the exposed sensor-input pin across process and temperature. The raw exfiltration SINR remains below -20~dB, while targeted filtering increases it above 14~dB and enables signal recovery. Silicon measurements demonstrate data exfiltration through the input pin at bit rates up to 10~kbps and error-free recovery of a PRBS message. These results expose a conventional test-observability gap and establish analog pin directionality as an AMS security property requiring explicit verification, test coverage, and defense rather than being inferred from nominal signal flow.

cs.CR

Leveraging Non-Equilibrium ECRAM Dynamics for Short-Term Plasticity in Neuromorphic Circuits

Short-term plasticity (STP) is fundamental to temporal information processing in biological neural systems but remains difficult to realize efficiently in neuromorphic hardware. Memristive electrochemical random-access memory (ECRAM) devices naturally exhibit non-equilibrium ionic dynamics that produce transient conductance modulation; however, these behaviors are typically treated as undesirable variability or tolerated as side effects in memory-centric computing paradigms. In this work, we instead transform these volatile dynamics from a tolerated device artifact into a computational resource through a cross-layer device-circuit-system co-design framework. We introduce a delay-feedback leaky integrate-and-fire (LIF) neuron architecture co-designed with ECRAM synapses that exploits activity-dependent conductance modulation with negligible additional circuit overhead. The architecture integrates ECRAM-based synapses with a tunable delay-feedback spike-generation path, enabling transient device dynamics to directly modulate neuron excitability and synaptic efficacy. We used experimentally characterized ECRAM devices exhibiting transient conductance modulation (1.5 KOhms per spike) to develop a compact behavioral model suitable for circuit-level simulation. Circuit simulations demonstrate two key STP behaviors -- synaptic facilitation and intrinsic excitability modulation -- while consuming 2 pJ per spike, and the same device-driven mechanisms extend across multiple neuron topologies. Network-level analysis further demonstrates frequency-selective spike processing, allowing individual synapses to act as tunable temporal filters within spiking neural networks. This work demonstrates that non-equilibrium ECRAM dynamics can serve as a native hardware substrate for STP and temporal computation in neuromorphic circuits.

cs.NE