arXiv subjects

Tai Min

Publications and source records attributed to Tai Min.

11 recordsLinked to original sources

arXiv2023

Electric Field Switching of Magnon Spin Current in a Compensated Ferrimagnet

Manipulation of directional magnon propagation, known as magnon spin current, is essential for developing magnonic memory and logic devices featuring nonvolatile functionalities and ultralow power consumption. Magnon spin current can usually be modulated by magnetic field or current-induced spin torques. However, these approaches may lead to energy dissipation caused by Joule heating. Electric-field switching of magnon spin current without charge current is highly desired but very challenging to realize. By integrating magnonic and piezoelectric materials, we demonstrate manipulation of the magnon spin current generated by the spin Seebeck effect in the ferrimagnetic insulator Gd3Fe5O12 (GdIG) film on a piezoelectric substrate. We observe reversible electric-field switching of magnon polarization without applied charge current. Through strain-mediated magnetoelectric coupling, the electric field induces the magnetic compensation transition between two magnetic states of the GdIG, resulting in its magnetization reversal and the simultaneous switching of magnon spin current. Our work establishes a prototype material platform that pave the way for developing magnon logic devices characterized by all electric field reading and writing and reveals the underlying physics principles of their functions.

cond-mat.mes-hall↗

arXiv2023

Thermal effect on microwave pulse driven magnetization switching of Stoner particle

Recently it has been demonstrated that the cosine chirp microwave pulse (CCMP) is capable of achieving fast and energy-efficient magnetization-reversal of a nanoparticle with zero-Temperature. However, we investigate the finite temperature, $T$ effect on the CCMP-driven magnetization reversal using the framework of the stochastic Landau Lifshitz Gilbert equation. At finite Temperature, we obtain the CCMP-driven fast and energy-efficient reversal and hence estimate the maximal temperature, $T_{max}$ at which the magnetization reversal is valid. $T_{max}$ increases with increasing the nanoparticle cross-sectional area/shape anisotropy up to a certain value, and afterward $T_{max}$ decreases with the further increment of nanoparticle cross-sectional area/shape anisotropy. This is because of demagnetization/shape anisotropy field opposes the magnetocrystalline anisotropy, i.e., reduces the energy barrier which separates the two stable states. For smaller cross-sectional area/shape anisotropy, the controlling parameters of CCMP show decreasing trend with temperature. We also find that with the increment easy-plane shape-anisotropy, the required initial frequency of CCMP significantly reduces. For the larger volume of nanoparticles, the parameters of CCMP remains constant for a wide range of temperature which are desired for the device application. Therefore, The above findings might be useful to realize the CCMP-driven fast and energy-efficient magnetization reversal in realistic conditions.

cond-mat.mes-hall↗

arXiv2022

On universal butterfly and antisymmetric magnetoresistances

Butterfly magnetoresistance (BMR) and antisymmetric magnetoresistance (ASMR) are about a butterfly-cross curve and a curve with one peak and one valley when a magnetic field is swept up and down along a fixed direction. Other than the parallelogram-shaped magnetoresistance-curve (MR-curve) often observed in magnetic memory devices, BMR and ASMR are two ubiquitous types of MR-curves observed in diversified magnetic systems, including van der Waals materials, strongly correlated systems, and traditional magnets. Here, we reveal the general principles and the picture behind the BMR and the ASMR that do not depend on the detailed mechanisms of magnetoresistance: 1) The systems exhibit hysteresis loops, common for most magnetic materials with coercivities. 2) The magnetoresistance of the magnetic structures in a large positive magnetic field and in a large negative magnetic field is approximately the same. With the generalized Ohm's law in magnetic materials, these principles explain why most BMR appears in the longitudinal resistance measurements and is very rare in the Hall resistance measurements. Simple toy models, in which the Landau-Lifshitz-Gilbert equation governs magnetization, are used to demonstrate the principles and explain the appearance and disappearance of BMR in various experiments. Our finding provides a simple picture to understand magnetoresistance-related experiments.

cond-mat.mes-hall↗

arXiv2022

Voltage-controlled significant spin wave Doppler shift in FM/FE heterojunction

Efficient manipulation of spin waves (SWs) is considered as one of the promising means for encoding information with low power consumption in next generation spintronic devices. The SW Doppler shift is one important phenomenon by manipulating SWs propagation. Here, we predict an efficient way to control the SW Doppler shift by voltage control magnetic anisotropy boundary (MAB) movement in FM/FE heterojunction. From the micromagnetic simulation, we verified that the SW Doppler shift aligns well with our theoretical predictions in Fe/$\rm BaTiO_3$ heterostructure. The SW Doppler shift also shows ultra wide-band shift (over 5 GHz) property with voltage. Such efficient SW Doppler shift may provide one possible way to measure the Hawking radiation of an analogue black hole in the SW systems.

physics.app-ph↗

arXiv2021

Intrinsic anomalous spin Hall effect

Charge-spin interconversion in magnetic materials is investigated by using first-principles calculations. In addition to the conventional spin Hall effect (SHE) that requires mutual orthogonality of the charge current, spin-flow direction, and spin polarization, the recently proposed anomalous SHE (ASHE) is confirmed in Mn2Au and WTe2. The interaction of the order parameter with conduction electrons leads to sizeable nonzero spin Berry curvatures that give rise to nonzero anomalous spin Hall conductivity (ASHC). Our calculations show that the ASHE is intrinsic and originates from the order-parameter-controlled spin-orbit interaction, which generates an extra anomalous effective field. A useful relationship among the order parameter, spin Berry curvature and ASHC is revealed. Our findings open a new avenue for arbitrary-type spin current generation and detection.

cond-mat.mtrl-sci↗

arXiv2021

Dancing Synchronization in Coupled Spin-Torque Nano-Oscillators

We are reporting a new type of synchronization, termed dancing synchronization, between two spin-torque nano-oscillators (STNOs) coupled through spin waves. Different from the known synchronizations in which two STNOs are locked with various fixed relative phases, in this new synchronized state two STNOs have the same frequency, but their relative phase varies periodically within the common period, resulting in a dynamic waving pattern. The amplitude of the oscillating relative phase depends on the coupling strength of two STNOs, as well as the driven currents. The dancing synchronization turns out to be universal, and can exist in two nonlinear Van der Pol oscillators coupled both reactively and dissipativly. Our findings open doors for new functional STNO-based devices.

cond-mat.mes-hall↗

arXiv2021

Narrow waveguide based on ferroelectric domain wall

Ferroelectric materials are spontaneous symmetry breaking systems characterized by ordered electric polarizations. Similar to its ferromagnetic counterpart, a ferroelectric domain wall can be regarded as a soft interface separating two different ferroelectric domains. Here we show that two bound state excitations of electric polarization (polar wave), or the vibration and breathing modes, can be hosted and propagate within the ferroelectric domain wall. Specially, the vibration polar wave has zero frequency gap, thus is constricted deeply inside ferroelectric domain wall, and can propagate even in the presence of local pinnings. The ferroelectric domain wall waveguide as demonstrated here, offers new paradigm in developing ferroelectric information processing units.

cond-mat.mtrl-sci↗

arXiv2021

Giant Crystal Hall Effect in Collinear Antiferromagnetic $\gamma$-FeMn

The spontaneous Hall effect is usually governed by three conventional mechanisms, such as the Berry curvature, skew scattering and side jump, which widely exist in ferromagnetic or antiferromagnetic materials. However, in this work, based on first principle calculations, we predict a giant crystal Hall effect (CHE) in the antiferromagnetic $\gamma$-FeMn, which can not be understood by the previous three conventional mechanisms and the Hall angle therein can be as large as 18.4% at low temperature. Furthermore, with Boltzmann transport equation and a tight-binding model, we conclude that, the asymmetric group velocities on Fermi surface is the origin of this CHE in $\gamma$-FeMn. And with a systematic symmetry argument, we show that, this unusual effect is not dependent on specific materials but universal in any crystals with similar symmetry even without local magnetization.

cond-mat.mes-hall↗

arXiv2021

Unified First-Principles Study of the Anomalous Hall Effect Based on Exact Muffin-Tin Orbitals

Based on the exact muffin-tin orbitals (EMTOs), we developed a first-principles method to calculate the current operators and investigated the anomalous Hall effect in bcc Fe as an example, with which we successfully separated the skew scattering contribution from the side jump and intrinsic contributions by fitting the scaling law with the introduction of sparse impurities. By investigating the temperature dependence of the anomalous Hall effect in bulk Fe, we predicted a fluctuated anomalous Hall angle as a function of temperature when considering only phonons, which, in the future, can be measured in experiments by suppressing magnon excitation, e.g., by applying a high external magnetic field.

cond-mat.mtrl-sci↗

arXiv2019

Intrinsic Picosecond Magnetic Switching Mechanism Assisted by an Electric Field in a Synthetic Antiferromagnetic Structure

The processional switching mechanism governs magnetic switching in magnetic tunnel junctions (MTJs) in the sub-nanosecond range, which limits the application of spin transfer torque magnetic random access memory (STT-MRAM) in the ultrafast region. In this paper, we propose a new picosecond magnetic switching mechanism in a synthetic antiferromagnetic (SAF) structure using the adjustable Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction controlled by an external electric field (E-field). It is shown that along with the sign change of the RKKY interaction in the SAF structure with an external E-field, the critical switching current density can be significantly reduced by one order of magnitude compared to that of a normal MTJ design at 100 ps; thus, this novel STT-MRAM can be written with a very low switching current density to avoid the MTJ breakdown problem and reduce the writing energy. To understand the physical origin of this abnormal phenomenon, a toy model is proposed in which the external-E-field-controlled sign change of the RKKY interaction in the SAF structure provides an extra contribution to the total energy that helps thespins overcome the energy barrier and break the processional switching mechanism.

cond-mat.mes-hall↗

arXiv2017

Ionic Modulation of Interfacial Magnetism through Electrostatic Doping in Pt/YIG bilayer heterostructure

Voltage modulation of yttrium iron garnet (YIG) with compactness, high speed response, energy efficiency and both practical/theoretical siginificances can be widely applied to various YIG based spintronics such as spin Hall, spin pumping, spin Seeback effects. Here we initial an ionic modulation of interfacial magnetism process on YIG/Pt bilayer heterostructures, where the Pt capping would influence the ferromagnetic (FMR) field position significantly, and realize a significant magnetism enhancement in bilayer system. A large voltage induced FMR field shifts of 690 Oe has been achieved in YIG (13 nm)/Pt (3 nm) multilayer heterostructures under a small voltage bias of 4.5 V. The remarkable ME tunability comes from voltage induced extra FM ordering in Pt metal layer near the Pt/YIG interface. The first-principle theoretical simulation reveal that the electrostatic doping induced Pt5+ ions have strong magnetic ordering due to uncompensated d orbit electrons. The large voltage control of FMR change pave a foundation towards novel voltage tunable YIG based spintronics.

cond-mat.mtrl-sci↗