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Syed Mohammad Shahed

Publications and source records attributed to Syed Mohammad Shahed.

2 recordsLinked to original sources

The Origin of the Observed Raman Peaks in α-MnTe

The Raman spectrum of the room-temperature altermagnet $α$-MnTe is reported to contain unassigned peaks at 120(3) cm$^{-1}$ and 140(3) cm$^{-1}$, absent from the predicted phonon spectrum of the material. This has generated considerable debate within the altermagnet community and necessitates urgent resolution. This work establishes that these peaks, together with the 90(5) cm$^{-1}$ peak that matches a theoretically predicted mode, are all extrinsic, originating from elemental tellurium formed during air exposure of the surface. Raman spectra of MBE-grown thin films show that these peaks closely match those of elemental tellurium, emerge soon after air exposure, and are absent in AlO$_x$-capped films. X-ray photoelectron spectroscopy shows that air exposure breaks Mn--Te bonds and oxidizes Mn within a minute. Cross-sectional scanning transmission electron microscopy with energy-dispersive X-ray spectroscopy reveals that the oxidation leads to Mn out-diffusion, forming a few-nanometer-thick oxide layer above a buried, Te-enriched region, likely responsible for the anomalous Raman peaks. Additionally, no sample exhibited the 175 cm$^{-1}$ Raman peak which is commonly attributed to MnTe$_2$. The aggressive surface oxidation and associated elemental Te formation in MnTe have important implications for any surface-sensitive and optical characterization of MnTe (and other similar Te-containing materials) involving even the briefest air exposure.

cond-mat.mtrl-sci

Conductivity scaling of the anomalous Hall effect in the altermagnetic semiconductor α-MnTe

α-MnTe is a prototypical altermagnet exhibiting a strong anomalous Hall effect (AHE), despite having a nearly vanishing magnetization. Lately, sample-to-sample variations of the amplitude of the AHE have raised concerns of a possible defect related origin, especially in thin films. Here, we study the AHE in α-MnTe films grown on SrF2 that have the crystal structure and m'm'm magnetic point group symmetry expected for bulk. By studying the scaling of the AHE with conductivity for those films and previously reported measurements in the literature, we find that sample-to-sample variations are well explained by a scaling law consistent with a hopping origin. Importantly, a comparison with other magnetic semiconductors reveals the colossal amplitude of the AHE of α-MnTe compared to its measured spontaneous magnetization from magnetometry and polarized neutron reflectivity. Our findings address the important fundamental question of the origin of the AHE of α-MnTe and further demonstrate the potential of altermagnets as promising spintronic materials.

cond-mat.str-el