arXiv subjects

Surajit Saha

Publications and source records attributed to Surajit Saha.

At least 37 records · Page 2Linked to original sources

arXiv2022

Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7

We have investigated the effect of Cu substitution in Eu2(Ir1-xCux)2O7 with the help of magnetic and transport property measurements. XPS measurement reveals that each Cu2+ converts Ir4+ to double amount of Ir5+ ions. The metal-insulator transition temperature (T_MI) is obtained around 120 K. In the insulating phase, at lower temperature below 50 K, the temperature dependent resistivity follows a power law dependence and the magnitude of the exponent increases with Cu concentrations. The temperature dependent thermopower is observed to follow the electrical resistivity down to 50 K, except for a sudden drop in thermopower at temperature below 50 K. We find negligible Hall voltage in the metallic regime of the samples but a sudden Hall voltage is developed below 50 K. We observe bifurcation in zero field cooled and field cooled (ZFC-FC) magnetization below irreversibility temperature, exchange bias and negative magnetoresistance at 3 K and the magnitude of all these properties increases with Cu concentrations. In the insulating region (below 6 K) there exists a linear specific heat and its coefficient decreases with Cu doping which indicates the reduction of spinon contribution with Cu doping.

cond-mat.str-el↗

arXiv2022

Virtual walks inspired by a mean field kinetic exchange model of opinion dynamics

We propose two different schemes of realizing a virtual walk corresponding to a kinetic exchange model of opinion dynamics. The walks are either Markovian or non-Markovian in nature. The opinion dynamics model is characterized by a parameter $p$ which drives an order disorder transition at a critical value $p_c$. The distribution $S(X,t)$ of the displacements $X$ from the origin of the walkers is computed at different times. Below $p_c$, two time scales associated with a crossover behavior in time are detected, which diverge in a power law manner at criticality with different exponent values. $S(X,t)$ also carries the signature of the phase transition as it changes its form at $p_c$. The walks show the features of a biased random walk below $p_c$, and above $p_c$, the walks are like unbiased random walks. The bias vanishes in a power law manner at $p_c$ and the width of the resulting Gaussian function shows a discontinuity. Some of the features of the walks are argued to be comparable to the critical quantities associated with the mean field Ising model, to which class the opinion dynamics model belongs. The results for the Markovian and non-Markovian walks are almost identical which is justified by considering the different fluxes. We compare the present results with some earlier similar studies.

cond-mat.stat-mech↗

arXiv2021

Low Thermal Conductivity and Interface Thermal Conductance in SnS2

After the discovery of graphene, there have been tremendous efforts in exploring various layered two-dimensional (2D) materials for their potential applications in electronics, optoelectronics, as well as energy conversion and storage. One of such 2D materials, SnS2, which is earth abundant, low in toxicity, and cost effective, has been reported to show a high on/off current ratio, fast photodetection, and high optical absorption, thus making this material promising for device applications. Further, a few recent theoretical reports predict high electrical conductivity and Seebeck coefficient in its bulk counterparts. However, the thermal properties of SnS2 have not yet been properly explored, which are important to materialize many of its potential applications. Here, we report the thermal properties of SnS2 measured using the optothermal method and supported by density functional theory (DFT) calculations. Our experiments suggest very low in-plane lattice thermal conductivity (\k{appa} = 3.20 +- 0.57 W m-1 K-1) and cross-plane interfacial thermal conductance per unit area (g = 0.53 +- 0.09 MW m-2 K-1) for monolayer SnS2 supported on a SiO2/Si substrate. The thermal properties show a dependence on the thickness of the SnS2 flake. Based on the findings of our DFT calculations, the very low value of the lattice thermal conductivity can be attributed to low group velocity, a shorter lifetime of the phonons, and strong anharmonicity in the crystal. Materials with low thermal conductivity are important for thermoelectric applications as the thermoelectric power coefficient goes inversely with the thermal conductivity.

cond-mat.mtrl-sci↗

arXiv2021

Spin-phonon coupling in Sr and Ti incorporated 9R-BaMnO3

Materials having strong coupling between different degrees of freedom such as spin, lattice, orbital, and charge are of immense interest due to their potential device applications. Here, we have stabilized the 9R phase of BaMnO3, by Sr (Ti) doping in the Ba (Mn) site using solid-state route at ambient pressure, which otherwise requires high-pressure conditions to syntheize. Crsyatl structure, phonon spectra, and their evolution with temperature are investigated using x-ray diffraction and Raman spectroscopic techniques. Temperature-dependent magnetization data reveal an antiferromagnetic transition at around (TN =) 262 K and 200 K for Ba0.9Sr0.1MnO3 and BaMn0.9Ti0.1O3, respectively. No structural phase transition or lattice instabilities are observed in the measured temperature range (80 - 400 K) for both the compounds. We have observed anomalous behaviour of four different phonon modes involving Mn or O-vibrations at low temperatures which have been attributed to spin-phonon coupling.

cond-mat.mtrl-sci↗

arXiv2021

Correlations between the structural, magnetic, and ferroelectric properties of BaMO3: M = Ti1-x(Mn/Fe)x compounds: A Raman study

Multiferroics possess two or more switchable states such as polarization, magnetization, etc. Phonon excitations in multiferroic phase are strongly modified by magnetoelectric coupling, spin-phonon coupling, and anharmonic phonon-phonon interactions. Here, we have investigated the correlation between phonons and multiferroic order parameters in hexagonal BaMO3: M = Ti1-x(Mn/Fe)x systems using powder x-ray diffraction (PXRD), Raman spectroscopic, and magnetic measurements. The structural transformation from a polar tetragonal to a non-polar 6H-type hexagonal phase is observed as a function of doping (Mn/Fe). Magnetic measurements reveal that the BaTi1-xMnxO3 is paramagnetic while BaTi1-xFexO3 exhibits composition-dependent ferromagnetic order. Importantly, Anomalous temperature-dependence is observed for two phonons (E1g at ~ 152 cm-1 and A1g at ~ 636 cm-1) in both the systems exhibiting similar trend with the doping (Mn/Fe) irrespective of the differences in their magnetic ground state. Hence, we attribute the phonon anomalies in both the (Fe/Mn doped) systems to strong anharmonic phonon-phonon interactions arising from large atomic displacements involved in the vibrations. In addition, we have also observed signatures of correlation of phonons with ferroelectric phase as well as magnetically ordered state suggesting the presence of a strain-induced magnetoelectric coupling in the doped compounds.

cond-mat.mtrl-sci↗

arXiv2021

Engineering crystal structure and spin-phonon coupling in Ba1-xSrxMnO3

The interplay between different degrees of freedom such as charge, spin, orbital, and lattice has received a great deal of interest due to its potential to engineer materials properties and their functionalities for device applications. In this work, we have explored the crystallographic phase diagram of Ba1-xSrxMnO3 and studied the correlation between two degrees of freedom, namely phonons and spins using magnetization and inelastic light scattering measurements. The system undergoes a series of crystallographic phase transitions 2H -> 9R -> 4H as a function of doping (Sr) as observed by X-ray diffraction measurements. Investigation of their temperature-dependent magnetization reveals a para- to antiferro-magnetic transition for all the compositions. An Eg phonon in the 9R phase and an E1g phonon in the 4H phase involving Mn or O-vibrations, show anomalous temperature-dependence in the antiferromagnetic phase arising due to spin-phonon coupling.

cond-mat.mtrl-sci↗

arXiv2021

Phonon Anomaly In 9R-Ba0.9Sr0.1MnO3

Materials which possess coupling between different degrees of freedom such as charge, spin, orbital and lattice are of tremendous interest due to their potential for device applications. It has been recently realized that some of manganite perovskite oxides show structural and ferroelectric instabilities which may be tuned by imposing internal or external strain. Among manganite perovskites, AMnO3 (A = Ca, Sr and Ba) are reported to be good candidates to show spin-phonon coupling driven multiferroicity. Here, we have probed the correlation between vibrational and magnetic properties in the 9R-type hexagonal Ba0.9Sr0.1MnO3 (BSM10). Nine Raman active modes are observed which are characteristic phonon modes for 9R phase. The frequency ({omega}) of an Eg (344 cm-1) mode which is related to Mn vibrations shows anomaly with temperature (T) manifested as a change in slope of {omega} vs T at 260 K. The temperature-dependent magnetization of BSM10 suggests a possible antiferromagnetic ordering at ~ 260 K. We, therefore, attribute the phonon anomaly to spin-phonon coupling arising due to the magnetic ordering.

cond-mat.mtrl-sci↗

arXiv2021

Signatures of Weak Spin-Phonon Coupling in 12R-BaTi0.4Mn0.6O3: A Raman Study

Antiferromagnetic materials with strong spin-phonon coupling have the potential for spintronic applications. Here, we report the structural, magnetic, and vibrational properties of 12R-BaTi0.4Mn0.6O3. Temperature-dependent magnetization data show the presence of weak antiferromagnetic interactions. Correlation between magnetic and vibrational properties are probed by using temperature-dependent Raman spectroscopic measurements. Two of the Raman active phonons show deviation from anharmonic behaviour at low temperatures which can be attributed to spin-phonon coupling. The strength of coupling is estimated using mean-field approximation and is found to be 1.1 and 1.2 cm-1 for phonons at 530 and 717 cm-1, respectively.

cond-mat.mtrl-sci↗

arXiv2021

Effect of phonon anharmonicity on ferroelectricity in EuxBa1-xTiO3

Investigating the competition between ferroelectric ordering and quantum fluctuations is essential to tailor the desired functionalities of mixed ferroelectric and incipient ferroelectric systems, like, (Ba,Sr)TiO3 and (Eu,Ba)TiO3. Recently, it has been shown that suppression of quantum fluctuations increases ferroelectric ordering in (Eu,Ba)TiO3 and since these phenomena are coupled to crystallographic phase transitions it is essential to understand the role of phonons. Here, we observe that the unusual temperature dependence of phonons in BaTiO3 gets suppressed when Ba2+ is replaced by Eu2+. This manifests in a decrease in the cubic-to-tetragonal (i.e., para-to-ferroelectric) phase transition temperature (by 150 K) and a complete suppression of tetragonality of the lattice (at room temperature by 40% replacement of Ba2+ by Eu2+). We have quantified the anharmonicity of the phonons and observed that the replacement of Ba2+ by Eu2+ suppresses it (by 93%) with a resultant lowering of the ferroelectric ordering temperature in the EuxBa1-xTiO3. This suggests that tuning phonon anharmonicity can be an important route to novel ferroelectric materials.

cond-mat.mtrl-sci↗

arXiv2021

Superconductivity in doped Weyl semimetal Mo$_{0.9}$Ir$_{0.1}$Te$_{2}$ with broken inversion symmetry

This work presents the emergence of superconductivity in Ir - doped Weyl semimetal T$_d$ - MoTe$_{2}$ with broken inversion symmetry. Chiral anomaly induced planar Hall effect and anisotropic magneto-resistance confirm the topological semimetallic nature of Mo$_{1-x}$Ir$_{x}$Te$_{2}$. Observation of weak anisotropic, moderately coupled type-II superconductivity in T$_d$ -Mo$_{1-x}$Ir$_{x}$Te$_{2}$ makes it a promising candidate for topological superconductor.

cond-mat.supr-con↗

arXiv2021

Electron-phonon and phonon-phonon anharmonic interactions in 2H-MoX2 (X=S, Te): A comprehensive Resonant Raman study

Transition metal dichalcogenides (TMDs) are layered materials which show excellent potential for nanoelectronic and optoelectronic applications. However, as many of the exciting features of these materials are controlled by the anharmonic effects, a proper understanding of the phonon properties and anharmonicity associated with these materials is essential for the proposed applications to be realized. We present here a comprehensive study on the phonon properties of two different TMDs; viz., MoS2 and MoTe2, as a function of temperature, laser excitations, and polarization, as well as flake-thickness. Our study includes the measurement of anharmonicity in the first-order and higher order Raman scattering processes. The variations in anharmonicity with the thickness of MoS2 and MoTe2 have been explained in terms of their phonon symmetries, electron-phonon coupling, and phonon-phonon interactions. Further, the effect of the underlying substrate on the anharmonic properties of the in-plane and out-of-plane phonons has also been estimated from the Raman measurements, thus elucidating the intrinsic phonon properties of the 2D layered materials.

cond-mat.mtrl-sci↗

arXiv2021

Investigation of spin-phonon coupling and local magnetic properties in magnetoelectric Fe2TeO6

Spin-phonon coupling originated from spin-lattice correlation depends upon different exchange interactions in transition metal oxides containing 3d magnetic ions. Spin-lattice coupling can influence the coupling mechanism in magnetoelectric material. To understand the spin-lattice correlation in inverse trirutile Fe2TeO6 (FTO), magnetic properties and phonon spectra are studied. Signature of short-range magnetic correlation induced by 5/2-5/2 dimeric interaction and magnetic anomaly at 150 K is perceived apart from the familiar sharp transition (TN~210K) corresponding to long-range order by magnetization and heat capacity measurement. The magnetic transitions and the spin dynamics are further locally probed by muon spin resonance (μSR) measurement in both zero fields (ZF) and longitudinal field (LF) mode. Three dynamically distinct temperature regimes; (i) T >TN, (ii) TN>T>150 K, and (iii) T<150 K, are observed. A swift change in spin dynamics is realized at 150K by μSR, though previous studies suggest long-range antiferromagnetic order. The observation of renormalization of different Raman modes below 210K suggests the existence of spin-phonon coupling in the material. The coupling strength is quantified as in the range 0.1-1.2 cm-1 following the two-spin cluster approximation. We propose that the spin-phonon coupling is mediated by the Fe-O2-Fe interbilayer exchange play a significant role in ME coupling observed in the material.

cond-mat.str-el↗

arXiv2021

d5-off-centering induced ferroelectric and magnetoelectric correlations in trirutile-Fe2TeO6

We present the rare existence of d5 off-centering, weak ferroelectric polarization and demonstrate its correlation with observed magnetoelectric (ME) properties in the G type (TN~210 K) antiferromagnet Fe2TeO6 (FTO) compound. The origin of ferroelectricity (FE) is associated with both lattice and asymmetric electron density distribution around the ion cores. ME coupling is observed in magnetic field-dependent polarization, ME voltage, and magnetostrain measurements. Short-range magnetic ordering due to intrabilayer dimeric exchange coupling via the double oxygen bridged Fe-O1-Fe pathway is proposed to play a dominating role to exhibit the negative nonlinear magnetic field dependent ME behavior at 300 K. Interbilayer exchange via Fe-O2-Fe pathways dominantly determines the hysteretic nonlinear magnetic field dependent ME response below TN. The observed nonlinear ME coupling signifies magnetoelasticity as manifested in the temperature and magnetic field-dependent strain measurement. Hence the rare existence of ferroelectricity and magnetoelectric coupling by d5 ion is presented in FTO.

cond-mat.mtrl-sci↗

arXiv2021

Tailoring the Phase Transition and Electron-Phonon Coupling in 1T'-MoTe2 by Charge Doping: A Raman Study

Transition metal dichalcogenides (TMDs) are a class of widely studied 2D layered materials which exist in various polymorphs. The 1T' phase of MoTe2 is of prime importance as it has been reported to show quantum spin hall (QSH) behavior with a fairly large band-gap of ~ 60 meV, in contrast to most QSH materials known. It is noteworthy that though the monolayer 1T'-MoTe2 was initially predicted to show the QSH behavior, recent theoretical studies claim that the few-layered counterparts also exhibit higher order topological behavior. Besides, 1T'-MoTe2 also undergoes a hysteretic phase transition to the Td phase (which is a type-II Weyl semimetal) by breaking the inversion symmetry of the crystal. While the phase transition between these two topological phases is of utmost importance, its study has been mostly restricted to bulk single crystal flakes, thereby not sufficiently exploring the effect of dimensionality. We have studied the phase transition in 1T'-MoTe2 as a function of flake-thickness. Though our Raman studies show a suppression of the phase transition in the thin (thickness <10 nm) flakes [similar to the report Phys. Rev. B 97, 041410 (2018)], we have experimentally demonstrated the possibility of stabilizing the desired phase (1T' or Td) at room temperature by charge doping. Further, we have observed clear signatures of electron-phonon coupling in MoTe2, which evolves as a function of flake-thickness and charge doping.

cond-mat.str-el↗

arXiv2021

Hexagonal Boron Nitride-Graphene Heterostructures with Enhanced Interfacial Thermal Conductance for Thermal Management Applications

Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve their performance. Graphene supported on hexagonal boron nitride (h-BN) substrate has been reported to show enhanced (opto)electronic and thermal properties as compared to extensively used SiO2/Si supported graphene. Motivated by this, we have performed temperature- and power-dependent Raman Spectroscopic measurements on four different types of (hetero)structures: (a) h-BN (BN), (b) graphene (Gr), (c) h-BN on graphene (BG), and (d) graphene encapsulated by h-BN layers from both top and bottom (BGB), all supported on SiO2/Si substrate. We have estimated the values of thermal conductivity (\k{appa}) and interfacial thermal conductance per unit area (g) of these four (hetero)structures to demonstrate the structure-activity (thermal) relationship. We report here the values of \k{appa} and g for h-BN supported on SiO2/Si as 280.0 +-58.0 Wm-1K-1 and 25.6+-0.4 MWm-2K-1, respectively. More importantly, we have observed an improvement in both thermal conductivity and interfacial thermal conductance per unit area in the heterostructures which ensures a better heat dissipation in devices. The \k{appa} and g of h-BN encapsulated graphene on SiO2/Si (BGB) sample was observed to be 850.0+-81.0 Wm-1K-1 and 105+-1 MWm-2K-1, respectively, as opposed to 600.0+-93.0 Wm-1K-1 and 1.15+-0.40 MWm-2K-1, respectively, for graphene on SiO2/Si substrate. Therefore, we propose that for graphene-based nanoscale devices, encapsulation with h-BN is a better alternative to address heat management issues.

cond-mat.mtrl-sci↗

arXiv2020

Signatures of magnetostriction and spin-phonon coupling in magnetoelectric hexagonal 15R-BaMnO3

Spin-phonon coupling, the interaction of spins with surrounding lattice is a key parameter to understand the underlying physics of multiferroics and engineer their magnetization dynamics. Elementary excitations in multiferroic materials are strongly influenced by spin-phonon interaction, making Raman spectroscopy a unique tool to probe these coupling(s). Recently, it has been suggested that the dielectric and magnetic properties of 15R-type hexagonal BaMnO3 are correlated through the spin-lattice coupling. Here, we report the observation of an extensive renormalization of the Raman spectrum of 15R-BaMnO3 at 230 K, 280 K, and 330 K. Magnetic measurements reveal the presence of a long-range and a short-range magnetic ordering in 15R-BaMnO3 at 230 K and 330 K, respectively. The Raman spectrum shows the appearance of new Raman modes in the magnetically ordered phases. Furthermore, an additional Raman phonon appears below ~ 280 K, possibly arising from a local lattice-distortion due to the displacement of Mn-ions, that exhibits anomalous shift with temperature. The origin of the observed renormalization and phonon anomalies in Raman spectra are discussed based on the evidences from temperature- and magnetic-field-dependent Raman spectra, temperature-dependent x-ray diffraction, magnetization, and specific heat measurements. Our results indicate the presence of magnetostriction and spin-phonon coupling in 15R-BaMnO3 thus suggesting that the optical phonons are strongly correlated to its magnetoelectric properties.

cond-mat.mtrl-sci↗

arXiv2020

Electron-phonon coupling in APd3O4: A = Ca, Sr, and Sr0.85Li0.15

Here we have investigated the role of electron-phonon coupling on the Raman spectrum of narrow bandgap semiconductors APd3O4 (A = Ca, Sr) and hole-doped system Sr0.85Li0.15Pd3O4. Four Raman active phonons are observed at room temperature for all three compounds as predicted by factor group analysis. The lowest energy phonon (~190/202 cm-1) associated with Pd vibrations is observed to exhibit an asymmetric Fano-like lineshape in all the three compounds, indicating the presence of an interaction between the phonon and the electronic continuum. The origin of the electronic continuum states and electron-phonon coupling are discussed based on our laser power- and temperature-dependent Raman results. We have observed an enhanced strength of electron-phonon coupling in Sr0.85Li0.15Pd3O4 at low temperatures which can be attributed to the metallicity in this doped compound.

cond-mat.str-el↗

arXiv2015

On the nature of wettability of van der Waals heterostructures

Wetting behaviour of surfaces is believed to be affected by van der Waals (vdW) forces, however, there is no clear demonstration of this. With the isolation of two-dimensional vdW layered materials it is possible to test this hypothesis. In this paper, we report the wetting behaviour of vdW heterostructures which include, chemical vapor deposition (CVD) grown graphene, molybdenum disulfide (MoS2) and tungsten disulfide (WS2) on few layers of hexagon boron nitride (h-BN) and SiO2/Si. Our study clearly shows that while this class of two-dimensional materials are not wetting transparent, there seems to be a significant amount of influence on their wetting properties by the underlying substrate due to dominant vdW forces. Contact angle measurements indicate that graphene and graphene-like layered transitional metal dichalcogenides invariably have intrinsically dispersive surfaces with a dominating London-vdW force-mediated wettability. Electric field controlled wetting studies of MoS2/WS2/SiO2/Si heterostructures were performed and no notable changes to the water contact angle was seen with applied voltage although two orders of magnitude change in resistance was observed. We postulate that the highly dispersive nature of these surfaces arising from the predominant London-vdW forces could be the reason for such observation.

cond-mat.mes-hall↗