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Stephan Rinner

Publications and source records attributed to Stephan Rinner.

7 recordsLinked to original sources

Quantum memory on a nanophotonic silicon chip

Integrated photonic circuits offer great promise for quantum technologies. However, due to the rapid propagation of light, many envisioned applications require efficient on-chip quantum memories with a programmable delay, compact footprint, and high fidelity. Implementing this based on standard semiconductor processing technology is an outstanding challenge. Here, we realize such memories using erbium-doped silicon waveguides, fabricated as part of a multi-wafer project by a nanophotonic foundry. We demonstrate light storage with a $44.2(9)\ \text{MHz}$ bandwidth and a programmable delay exceeding $1\ \mu \text{s}$ in a device with a footprint of only $1.5\times 10^{-2}\ \text{mm}^2$, outperforming on-chip delay lines by many orders of magnitude. The phase of the read-out light field is preserved with a visibility of $91.3(30)\ \%$. The efficiency of $1.89(28)\times 10^{-8}$ can be improved in future devices through resonator enhancement and higher dopant concentrations. With this, the demonstrated approach will pave the way towards applications in photonic quantum computing based on scalable silicon processing technology.

quant-ph

Inhibited radiative decay enhances single-photon emitters

Quantum networks and modular quantum computers require efficient spin-photon interfaces, often realized using optical resonators that enhance radiative decay on a desired transition. However, this requires small mode volumes and high quality factors, which limits multiplexing capacity and demands precise frequency tuning. Here, we demonstrate an alternative approach that circumvents these bottlenecks for upscaling. Using a W1 silicon photonic crystal waveguide with a tailored photonic bandgap, we selectively inhibit unwanted decay pathways, thereby redirecting emission to the desired transition. This enables efficient photon collection over a large frequency range, allowing the resolution and individual addressing of tens of erbium dopants. Their lifetimes are preserved, or even increased, compared to bulk material. The extended mode volume of the devices enables the use of lower dopant concentrations, thereby improving emitter coherence. Our approach can be combined with Purcell enhancement and applied to other spin-qubit platforms, opening intriguing perspectives for photonic quantum technologies.

quant-ph

Luminescence thermometry based on photon emitters in nanophotonic silicon waveguides

The reliable measurement and accurate control of the temperature within nanophotonic devices is a key prerequisite for their application in both classical and quantum technologies. Established approaches use sensors that are attached in proximity to the components, which only offers a limited spatial resolution and thus impedes the measurement of local heating effects. Here, we therefore study an alternative temperature sensing technique that is based on measuring the luminescence of erbium emitters directly integrated into nanophotonic silicon waveguides. To cover the entire temperature range from 295 K to 2 K, we investigate two different approaches: The thermal activation of non-radiative decay channels for temperatures above 200 K and the thermal depopulation of spin- and crystal field levels at lower temperatures. The achieved sensitivity is 0.22(4) %/K at room temperature and increases up to 420(50) %/K at approximately 2 K. Within a few-minute measurement interval, we thus achieve a measurement precision that ranges from 0.04(1) K at the lowest studied temperature to 6(1) K at ambient conditions. In the future, the measurement time can be further reduced by optimizing the excitation pulse sequence and the fiber-to-chip coupling efficiency. Combining this with spatially selective implantation promises precise thermometry from ambient to cryogenic temperatures with a spatial resolution down to a few nanometers.

quant-ph

Characterization of the spin and crystal field Hamiltonian of erbium dopants in silicon

The integration of coherent emitters into low-loss photonic circuits is a key technology for quantum networking. In this context, nanophotonic silicon devices implanted with erbium are a promising hardware platform that combines advanced wafer-scale nanofabrication technology with coherent emission in the minimal-loss band of optical fibers. Recent studies have reported two distinct sites in the silicon lattice in which erbium can be reproducibly integrated with particularly promising properties. Here, for an in-depth analysis of these sites, resonant fluorescence spectroscopy is performed on a nanophotonic waveguide in magnetic fields applied along different orientations. In this way, the site symmetry is determined, the spin Hamiltonian is reconstructed and a partial fit of the crystal field Hamiltonian is performed. The obtained quantitative description of the magnetic interaction allows the optimization of Zeeman splittings, optical branching ratios or microwave driving to the needs of future experiments. Beyond that, the derived site symmetry constrains the location of the erbium dopant in the silicon unit cell. This is a key step towards a detailed microscopic understanding of the erbium sites, which may help to improve the integration yield, thus paving the way to efficient nanophotonic quantum memories based on the Er:Si platform.

quant-ph

Erbium emitters in commercially fabricated nanophotonic silicon waveguides

Quantum memories integrated into nanophotonic silicon devices are a promising platform for large quantum networks and scalable photonic quantum computers. In this context, erbium dopants are particularly attractive, as they combine optical transitions in the telecommunications frequency band with the potential for second-long coherence time. Here we show that these emitters can be reliably integrated into commercially fabricated low-loss waveguides. We investigate several integration procedures and obtain ensembles of many emitters with an inhomogeneous broadening of < 2 GHz and a homogeneous linewidth of < 30 kHz. We further observe the splitting of the electronic spin states in a magnetic field up to 9 T that freezes paramagnetic impurities. Our findings are an important step towards long-lived quantum memories that can be fabricated on a wafer-scale using CMOS technology.

quant-ph

Narrow optical transitions in erbium-implanted silicon waveguides

The realization of a scalable architecture for quantum information processing is a major challenge for quantum science. A promising approach is based on emitters in nanostructures that are coupled by light. Here, we show that erbium dopants can be reproducibly integrated at well-defined lattice sites by implantation into pure silicon. We thus achieve a narrow inhomogeneous broadening, less than 1 GHz, strong optical transitions, and an outstanding optical coherence even at temperatures of 8 K, with an upper bound to the homogeneous linewidth of around 10 kHz. Our study thus introduces a promising materials platform for the implementation of on-chip quantum memories, microwave-to-optical conversion, and distributed quantum information processing.

quant-ph

Detection of cellular micromotion by advanced signal processing

Cellular micromotion - a tiny movement of cell membranes on the nanometer-micrometer scale - has been proposed as a pathway for inter-cellular signal transduction and as a label-free proxy signal to neural activity. Here we harness several recent approaches of signal processing to detect such micromotion in video recordings of unlabeled cells. Our survey includes spectral filtering of the video signal, matched filtering, as well as 1D and 3D convolutional neural networks acting on pixel-wise time-domain data and a whole recording respectively.

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