arXiv subjects

Stephan Lany

Publications and source records attributed to Stephan Lany.

At least 19 recordsLinked to original sources

arXiv2026

Crystal growth and characterization of the ultra-high temperature substrate $\mathrm{Ta_{1-x}Hf_{x}C_{0.5}}$

Incorporation of $\mathrm{Al_{y}Ga_{1-y}N}$ (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approaches to eliminate the defects arising from film-lattice mismatch can be established. Here, we report the optical floating zone crystal growth of $\mathrm{Ta_{1-x}Hf_{x}C_{0.5}}$ (x = 0.2), a new metallic substrate material family lattice matched to the ultra-wide-band-gap, Al-rich side (y = 0.91) of the AGN solid solution. Laue diffraction demonstrates large single crystal domains in the as-grown boule. Single crystal x-ray diffraction at T = 213 K in conjunction with first principles calculations shows that the material adopts a layered crystal structure with AA-type stacking of (Ta/Hf)-C-(Ta/Hf) trilayers described in the trigonal space group P-3m1 (#164), with a = 3.1168(4) \r{A}, c = 4.9644(4) \r{A}, and $\beta$ = 120.0{\deg}. X-ray photoelectron spectroscopy (XPS) measurements show the Hf:Ta ratio to be close to the nominal value of 0.8:0.2 in the grown crystal. Density Functional Theory calculations reveal that this structure is stabilized by the low energy of carbon-vacancy formation of a hypothetical $\mathrm{(Ta/Hf)_{1}C_{1}}$ anti-NiAs structure type, and imply flexibility in interface structure with an overlayer nitride film. A surface preparation/polishing procedure is developed that reduces root mean square (RMS) surface roughness from as-cut 130 nm to 7 nm as measured by atomic force microscopy. Scanning electron microscopy shows the presence of a native surface oxide, removed by polishing, along with carbon-rich pits. Time-domain thermoreflectance measurements show a room temperature thermal conductivity of $\kappa$ = 18.1(4) W m-1 K-1. These results provide key first steps for utilizing metallic, lattice matched, substrates for the growth of Al-rich AGN semiconductors.

cond-mat.mtrl-sci↗

arXiv2026

Toward Tunable Magnetic Dirac Semimetals: Mn Doping of Cd$_3$As$_2$

Magnetic impurities provide a route toward increasing functionality in electronic materials, often enabling new device concepts and architectures. In the case of topological semimetals, dilute magnetic doping presents a particularly attractive approach for inducing a Dirac to Weyl phase change via time reversal symmetry breaking. However, efforts to realize changes in the electronic structure have been limited by challenges in incorporating magnetic impurities into crystals with sufficiently high electron mobilities to detect them via transport or spectroscopic techniques. Here, we demonstrate incorporation of Mn into Cd$_3$As$_2$ Dirac semimetal thin films grown by molecular beam epitaxy (MBE). Using As-rich growth conditions and [001] oriented thin films, Mn compositions of >10% are achieved. Films contain uniform distributions of Mn with no evidence of secondary phases and exhibit electron mobilities greater than 10,000-30,000 cm$^2$/Vs up to 5% Mn. An evolution in the magnetization behavior along with the emergence of a second quantum oscillation frequency at low Mn concentrations provide preliminary evidence of Mn-induced changes in the electronic structure that are consistent with a Weyl phase. This work demonstrates the potential of magnetically doping topological semimetal thin films and a pathway for synthesizing them.

cond-mat.mtrl-sci↗

arXiv2025

Ferrimagnetic Order in Tetragonal Antiperovskite Mn$_3$GeN

The crystal and magnetic structures of the nitride antiperovskite Mn$_3$GeN reveals ferrimagnetic order stemming from a distorted kagome-derived lattice of the Mn atoms. Polycrystalline Mn$_3$GeN was synthesized via a solid-state reaction and characterized using neutron powder diffraction, DC magnetometry, and first-principles calculations. Rietveld refinement reveals near-stoichiometric composition (Mn$_3$GeN$_{0.94(1)}$) adopting a tetragonal $I4/mcm$ structure at $T$ = 500 K and below, featuring axially distorted and tilted [NMn$_6$] octahedra that result in a buckled Mn kagome lattice. On heating, the tetragonal distortion and octahedral tilt angle decrease continuously before transitioning to the cubic $Pm\bar{3}m$ antiperovskite phase at $T \approx$ 524 K. Neutron diffraction and magnetometry together reveal noncollinear ferrimagnetic ordering. For 30 K $\le T \le$ 500 K, the magnetic structure is described by a single propagation vector, $k$ = (0, 0, 0), with inequivalent Mn1 and Mn2 sublattices that couple antiferromagnetically to yield a net moment. Density functional theory-based calculations show the different local moments originate from the bandwidths associated with the distinct Mn-N bond lengths. The temperature dependence of the sublattice moments indicates a compensation-like crossover between Mn1- and Mn2-derived magnetization near 380 K. These findings uncover a previously unrecognized subtlety in the magnetic and structural behavior of Mn$_3$GeN, highlighting the interplay between structural distortions, magnetic ordering, and electronic structure in kagome-derived antiperovskite materials.

cond-mat.mtrl-sci↗

arXiv2025

Interplay of Ferromagnetic and Antiferromagnetic Interactions in Epitaxial Co$_3$ZnN

Antiperovskite nitrides with the general formula M$_3$N have attracted significant attention due to their tunable electronic and magnetic properties. Among them are many cobalt-based compounds predicted to exhibit high thermodynamic stability and intriguing magnetic behavior. Here, we report the synthesis and magnetic characterization of epitaxial Co$_3$ZnN thin films grown by radio frequency sputtering on SrTiO$_3$ (STO) and MgO substrates. X-ray diffraction confirms phase-pure (00l)-oriented films with cube-on-cube epitaxy on STO, with a c-lattice parameter of 3.752 angstroms. Magnetic measurements reveal clear hysteresis at 2 K with a coercive field of ~ 0.12 T and a small net moment of 0.11 ${\mu}_B$/f.u., suggesting either a canted antiferromagnetic (AFM) or ferrimagnetic (FiM) configuration. Temperature-dependent magnetization measurements show a transition near 25 K, with strong AFM interactions (Curie-Weiss $\Theta$ = -80.6 K) at high temperatures and short-range ferromagnetic correlations ($\Theta$ = +9.7 K) emerging near the transition. Complementary density functional theory (DFT) and Monte Carlo simulations indicate a ferromagnetic (FM) ground state, with the FM-AFM energy difference decreasing systematically with increasing supercell size, consistent with competition between FM and AFM/FiM interactions. These results highlight Co$_3$ZnN as a magnetically complex antiperovskite nitride with competing exchange interactions.

cond-mat.mtrl-sci↗

arXiv2024

Thin Film Synthesis, Structural Analysis, and Magnetic Properties of Novel Ternary Transition Metal Nitride MnCoN2

Recent high-throughput computational searches have predicted many novel ternary nitride compounds providing new opportunities for materials discovery in under explored phase spaces. Nevertheless, there are hardly any predictions and/or syntheses that incorporate only transition metals into new ternary nitrides. Here, we report on the synthesis, structure, and properties of MnCoN$_2$, a new ternary nitride material comprising only transition metals and N. We find that crystalline MnCoN$_2$ can be stabilized over its competing binaries, and over a tendency of this system to become amorphous, by controlling growth temperature within a narrow window slightly above ambient condition. We find that single-phase MnCoN$_2$ thin films form in a cation-disordered rocksalt crystal structure, which is supported by ab-initio calculations. X-ray photoelectron spectroscopy analysis suggests that MnCoN$_2$ is sensitive to oxygen through various oxides and hydroxides binding to cobalt on the surface. X-ray absorption spectroscopy is used to verify that Mn$^{3+}$ and Co$^{3+}$ cations exist in an octahedrally-coordinated environment, which is distinct from a combination of CoN and MnN binaries and in agreement with the rocksalt-based crystal structure prediction. Magnetic measurements suggest that MnCoN$_2$ has a canted antiferromagnetic ground state below 10 K. We extract a Weiss temperature of $\theta$ = -49.7 K, highlighting the antiferromagnetic correlations in MnCoN$_2$.

cond-mat.mtrl-sci↗

arXiv2023

Multiple Slater determinants and strong spin-fluctuations as key ingredients of the electronic structure of electron- and hole-doped Pb$_{10-x}$Cu$_x$(PO4)$_6$O

LK-99, with chemical formula Pb$_{10-x}$Cu$_x$(PO4)$_6$O, was recently reported to be a room-temperature superconductor. While this claim has met with little support in a flurry of ensuing work, a variety of calculations (mostly based on density-functional theory) have demonstrated that the system possesses some unusual characteristics in the electronic structure, in particular flat bands. We have established previously that within DFT, the system is insulating with many characteristics resembling the classic cuprates, provided the structure is not constrained to the $P$3(143) symmetry nominally assigned to it. Here we describe the basic electronic structure of LK-99 within self-consistent many-body perturbative approach, quasiparticle self-consistent GW (QSGW) approximation and their diagrammatic extensions. QSGW predicts that pristine LK-99 is indeed a Mott/charge transfer insulator, with a bandgap gap in excess of 3eV, whether or not constrained to the $P$3(143) symmetry. The highest valence bands occur as a pair, and look similar to DFT bands. The lowest conduction band is an almost dispersionless state of largely Cu $d$ character. When Pb$_9$Cu(PO$_4$)$_6$O} is hole-doped, the valence bands modify only slightly, and a hole pocket appears. However, two solutions emerge: a high-moment solution with the Cu local moment aligned parallel to neighbors, and a low-moment solution with Cu aligned antiparallel to its environment. In the electron-doped case the conduction band structure changes significantly: states of mostly Pb character merge with the formerly dispersionless Cu $d$ state, and high-spin and low spin solutions once again appear. Thus we conclude that with suitable doping, the ground state of the system is not adequately described by a band picture, and that strong correlations are likely.

cond-mat.supr-con↗

arXiv2023

Pb-apatite framework as a generator of novel flat-band CuO based physics

Based on DFT calculations, we present the basic electronic structure of CuPb9(PO4)6O (Cu-doped lead apatite, LK-99), in two scenarios: (1) where the structure is constrained to the P3 symmetry and (2) where no symmetry is imposed. At the DFT level, the former is predicted to be metallic while the latter is found to be a charge-transfer insulator. In both cases the filling of these states is nominally d9, consistent with the Cu2+ valence state, and Cu with a local magnetic moment ~0.7mB. In the metallic case we find these states to be unusually flat (0.2 eV dispersion), giving high DOS at EF that we argue can be a host for novel electronic physics, including potentially high temperature superconductivity. The flatness of the bands is the likely origin of symmetry-lowering gapping possibilities that would remove the spectral weight from EF. Since some experimental observations show metallic/semiconducting behavior, we propose that disorder is responsible for closing the gap. We consider a variety of possibilities that could possibly close the gap, but limit consideration to kinds of disorder that preserve electron count. For all possibilities we considered (spin disorder, O on vacancy sites, Cu on different Pb sites), the local Cu moment, and consequently the gap remains robust. We conclude that disorder responsible for metallic behavior entails some kind of doping where the electron count changes. We claim that the emergence of the flat bands should be due to weak wave function overlap between the Cu and O orbitals, owing to the directional character of the constituent orbitals. So, finding an appropriate host structure for minimizing hybridization between Cu and O while allowing them to still weakly interact should be a promising route for generating flat bands at EF which can lead to interesting electronic phenomena, regardless of whether LK-99 is a room-temperature superconductor.

cond-mat.supr-con↗

arXiv2022

Investigating the Electronic Structure of Prospective Water-splitting Oxide BaCe$_{0.25}$Mn$_{0.75}$O$_{3-\delta}$ Before and After Thermal Reduction

BaCe$_{0.25}$Mn$_{0.75}$O$_{3-\delta}$ (BCM), a non-stoichiometric oxide closely resembling a perovskite crystal structure, has recently emerged as a prospective contender for application in renewable energy harvesting by solar thermochemical hydrogen generation. Using solar energy, oxygen-vacancies can be created in BCM and the reduced crystal so obtained can, in turn, produce H2 by stripping oxygen from H2O. Therefore, a first step toward understanding the working mechanism and optimizing the performance of BCM, is a thorough and comparative analysis of the electronic structure of the pristine and the reduced material. In this paper, we probe the electronic structure of BCM using the combined effort of first-principles calculations and experimental O K-edge x-ray absorption spectroscopy (XAS). The computed projected density-of-states (PDOS) and orbital-plots are used to propose a simplified model for orbital-mixing between the oxygen and the ligand atoms. With the help of state-of-the-art simulations, we are able to find the origins of the XAS peaks and to categorize them on the basis of contribution from Ce and Mn. For the reduced crystal, the calculations show that, as a consequence of dielectric screening, the change in electron-density resulting from the reduction is strongly localized around the oxygen vacancy. Our experimental studies reveal a marked lowering of the first O K-edge peak in the reduced crystal which is shown to result from a diminished O-2p contribution to the frontier unoccupied orbitals, in accordance with the tight-binding scheme. Our study paves the way for investigation of the working-mechanism of BCM and for computational and experimental efforts aimed at design and discovery of efficient water-splitting oxides.

cond-mat.mtrl-sci↗

arXiv2022

Compositionally Complex Perovskite Oxides for Solar Thermochemical Water Splitting

Solar thermochemical hydrogen generation (STCH) is a promising approach for eco-friendly H2 production, but conventional STCH redox compounds often suffer from thermodynamic and kinetic limitations with limited tunability. Expanding from the nascent high-entropy ceramics field, this study explores a new class of compositionally complex perovskite oxides (La0.8Sr0.2)(Mn(1-x)/3Fe(1-x)/3CoxAl(1-x)/3)O3 for STCH. In situ X-ray diffraction demonstrates the phase stability during redox cycling and in situ X-ray photoelectron spectroscopy shows preferential redox of Co. The extent of reduction increases, but the intrinsic kinetics decreases, with increased Co content. Consequently, (La0.8Sr0.2)(Mn0.2Fe0.2Co0.4Al0.2)O3-{\delta} achieves an optimal balance between the thermodynamics and kinetics properties. The combination of a moderate enthalpy of reduction, high entropy of reduction, and preferable surface oxygen exchange kinetics enables a maximum H2 yield of 395 +- 11 {\mu}mol g-1 in a short 1-hour redox duration. Entropy stabilization expectedly contributes to the structure stability during redox without phase transformation, which enables an exceptional STCH stability for >50 cycles under harsh interrupted conditions. The underlying redox mechanism is further elucidated by the density functional theory based parallel Monte Carlo computation, which represents a new computation paradigm first established here. This study suggests a new class of non-equimolar compositionally complex ceramics for STCH and chemical looping.

cond-mat.mtrl-sci↗

arXiv2022

Computational Discovery of Two-Dimensional Rare-Earth Iodides: Promising Ferrovalley Materials for Valleytronics

Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter. Using Kinetically Limited Minimization (KLM), an unconstrained crystal structure prediction algorithm, and prototype sampling based on first-principles calculations, we have discovered 17 new Ferrovalley materials (rare-earth iodides RI$_2$, where R is a rare-earth element belonging to Sc, Y, or La-Lu, and I is Iodine). The rare-earth iodides are layered and demonstrate 2H, 1T, or 1T$_d$ phase as the ground-state in bulk, analogous to transition metal dichalcogenides (TMDCs). The calculated exfoliation energy of monolayers is comparable to that of graphene and TMDCs, suggesting possible experimental synthesis. The monolayers in the 2H phase exhibit two-dimensional ferromagnetism due to unpaired electrons in $d$ and $f$ orbitals. Throughout the rare-earth series, $d$ bands show valley polarization at $K$ and $\bar{K}$ points in the Brillouin zone near the Fermi level. Due to strong magnetic exchange interaction and spin-orbit coupling, large intrinsic valley polarization in the range of 15-143 meV without external stimuli is observed, which can be tuned and enhanced by applying a biaxial strain. These valleys can selectively be probed and manipulated for information storage and processing, potentially offering superior performance beyond conventional electronics and spintronics. We further show that the 2H ferromagnetic phase of RI$_2$ monolayers possesses non-zero Berry curvature and exhibits the valley Hall effect with considerable anomalous Hall conductivity. Our work will incite exploratory synthesis of the predicted Ferrovalley materials and their application in valleytronics and beyond.

cond-mat.mtrl-sci↗

arXiv2022

Direct link between disorder, mobility and magnetoresistance in topological semimetals

The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here, we achieve unmatched and systematic control of point defect concentrations in the prototypical Dirac semimetal Cd$_3$As$_2$ to gain important insight into the role of disorder on electron transport behavior. We find that arsenic vacancies introduce localized states near the Fermi level and strongly influence the electron mobility. Reducing arsenic vacancies by changing the As/Cd flux ratio used during deposition results in an increase in the magnetoresistance from 200%-1000% and an increase in mobility from 5000-18,000 cm$^2$/Vs. However, the degree of linear magnetoresistance, which has previously been linked to disorder, is found here to correlate inversely with measures of disorder, including disorder potential and disorder correlation lengths. This finding yields important new information in the quest to identify the origin of linear magnetoresistance in a wider range of materials.

cond-mat.mtrl-sci↗

arXiv2022

Combinatorial synthesis of cation-disordered manganese tin nitride MnSnN$_2$ thin films with magnetic and semiconducting properties

Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN$_2$, via combinatorial sputtering of thin films. Grazing incidence wide angle X-ray scattering and laboratory X-ray diffraction studies show a wide composition tolerance for this wurtzite-like MnSnN$_2$, ranging from $20\% <$ Mn/(Mn+Sn) $< 65$\% with cation disorder across this composition space. Magnetic susceptibility measurements reveal a low-temperature transition ($T^{\mathrm{*}} \approx 10$ K) for MnSnN$_2$ and strong antiferromagnetic correlations, although the ordering below this transition may be complex. This finding contrasts with bulk MnSiN$_2$ and MnGeN$_2$, which exhibited antiferromagnetic ordering above 400 K in previous studies. Spectroscopic ellipsometry identifies an optical absorption onset of 1 eV for the experimentally-synthesized phase exhibiting cation disorder, consistent with the computationally-predicted 1.2 eV bandgap for the cation-ordered structure. Electronic conductivity measurements confirm the semiconducting nature of this new phase by showing increasing conductivity with increasing temperature. This work adds to the set of known semiconductors that are paramagnetic at room temperature and will help guide future work targeted at controlling the structure and properties of semiconducting materials that exhibit magnetic behavior.

cond-mat.mtrl-sci↗

arXiv2021

Band gap analysis and carrier localization in cation-disordered ZnGeN$_2$

Cation site disorder provides a degree of freedom in the growth of ternary nitrides for tuning the technologically relevant properties of a material system. For example, the band gap of ZnGeN$_2$ changes when the ordering of the structure deviates from that of its ground state. By combining the perspectives of carrier localization and defect states, we analyze the impact of different degrees of disordering on electronic properties in ZnGeN$_2$, addressing a gap in current studies which focus on dilute or fully disordered systems. The present study demonstrates changes in the density of states and localization of carriers in ZnGeN$_2$ calculated using band gap-corrected density functional theory and hybrid calculations on partially disordered supercells generated using the Monte Carlo method. We use localization and density of states to discuss the ill-defined nature of a band gap in a disordered material, comparing multiple definitions of the energy gap in the context of theory and experiment. Decreasing the order parameter results in a large reduction of the band gap in disordered cases. The reduction in band gap is due in part to isolated, localized states that form above the valence band continuum and are associated with nitrogen coordinated by more zinc than germanium. The prevalence of defect states in all but the perfectly ordered structure creates challenges for incorporating disordered ZnGeN$_2$ into optical devices, but the localization associated with these defects provides insight into mechanisms of electron/hole recombination in the material.

cond-mat.mtrl-sci↗

arXiv2021

Computational Fermi level engineering and doping-type conversion of Ga2O3 via three-step synthesis process

Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from achieving p-type conductivity, plenty of opportunity exists to engineer the position of the Fermi level for improved design of Ga2O3 based devices. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench synthesis protocol for hydrogen assisted Mg doping in beta-Ga2O3, taking into account the gas phase equilibrium between H2, O2 and H2O, which determines the H chemical potential. We predict Ga2O3 doping-type conversion to a net p-type regime after growth under reducing conditions in the presence of H2 followed by O-rich annealing, which is a similar process to the Mg acceptor activation by H removal in GaN. For equilibrium annealing there is an optimal temperature that maximizes the Ga2O3 net acceptor density for a given Mg doping level, which is further increased in the non-equilibrium annealing scenario without re-equilibration. After quenching to operating temperature, the Ga2O3 Fermi level drops below mid-gap down to about +1.5 eV above the valence band maximum, creating a significant number of uncompensated neutral MgGa0 acceptors. The Fermi level reduction down to +1.5 eV and suppression of free electron density in this doping type converted (NA > ND) Ga2O3 material is of significance and impact for the design of Ga2O3 power electronics devices.

cond-mat.mtrl-sci↗

arXiv2020

The role of disorder in the synthesis of metastable zinc zirconium nitrides

In materials science, it is often assumed that ground state crystal structures predicted by density functional theory are the easiest polymorphs to synthesize. Ternary nitride materials, with many possible metastable polymorphs, provide a rich materials space to study what influences thermodynamic stability and polymorph synthesizability. For example, ZnZrN2 is theoretically predicted at zero Kelvin to have an unusual layered "wurtsalt" ground state crystal structure with compelling optoelectronic properties, but it is unknown whether this structure can be realized experimentally under practical synthesis conditions. Here, we use combinatorial sputtering to synthesize hundreds of ZnxZr1-xNy thin film samples, and find metastable rocksalt-derived or boron-nitride-derived structures rather than the predicted wurtsalt structure. Using a statistical polymorph sampler approach, it is demonstrated that although rocksalt is the least stable polymorph at zero Kelvin, it becomes the most stable polymorph at high effective temperatures similar to those achieved using this sputter deposition method, and thus corroborates experimental results. Additional calculations show that this destabilization of the wurtsalt polymorph is due to configurational entropic and enthalpic effects, and that vibrational contributions are negligible. Specifically, rocksalt- and boron-nitride-derived structures become the most stable polymorphs in the presence of disorder because of higher tolerances to cation cross-substitution and off-stoichiometry than the wurtsalt structure. This understanding of the role of disorder tolerance in the synthesis of competing polymorphs can enable more accurate predictions of synthesizable crystal structures and their achievable material properties.

cond-mat.mtrl-sci↗

arXiv2019

Thin film synthesis of semiconductors in the Mg-Sb-N materials system

Nitrides feature many interesting properties, such as a wide range of bandgaps suitable for optoelectronic devices including light-emitting diodes (LEDs), and piezoelectric response used in microelectromechanical systems (MEMS). Nitrides are also significantly underexplored compared to oxides and other chemistries, with many being thermochemically metastable, sparking interest from a basic science point of view. This paper reports on experimental and computational exploration of the Mg-Sb-N material system, featuring both metastable materials and interesting semiconducting properties. Using sputter deposition, we discovered a new Mg2SbN3 nitride with a wurtzite-derived crystal structure and synthesized the antimonide-nitride Mg3SbN with an antiperovskite crystal structure for the first time in thin film form. Theoretical calculations indicate that Mg2SbN3 is metastable and has properties relevant to LEDs and MEMS, whereas Mg3SbN has a large dielectric constant (28\epsilon_0) and low hole effective masses (0.9m_0), of interest for photovoltaic solar cell absorbers. The experimental solar-matched 1.3 eV optical absorption onset of the Mg3SbN antiperovskite agrees with the theoretical prediction (1.3 eV direct, 1.1 eV indirect), and with the measurements of room-temperature near-bandgap photoluminescence. These results make an important contribution towards understanding semiconductor properties and chemical trends in the Mg-Sb-N materials system, paving the way to future practical applications of these novel materials.

cond-mat.mtrl-sci↗

arXiv2018

The role of decomposition reactions in assessing first-principles predictions of solid stability

The performance of density functional theory (DFT) approximations for predicting materials thermodynamics is typically assessed by comparing calculated and experimentally determined enthalpies of formation from elemental phases, {\Delta}Hf. However, a compound competes thermodynamically with both other compounds and their constituent elemental forms, and thus, the enthalpies of the decomposition reactions to these competing phases, {\Delta}Hd, determines thermodynamic stability. We evaluated the phase diagrams for 56,791 compounds to classify decomposition reactions into three types: 1. those that produce elemental phases, 2. those that produce compounds, and 3. those that produce both. This analysis shows that the decomposition into elemental forms is rarely the competing reaction that determines compound stability and that approximately two-thirds of decomposition reactions involve no elemental phases. Using experimentally reported formation enthalpies for 1,012 solid compounds, we assess the accuracy of the generalized gradient approximation (GGA) (PBE) and meta-GGA (SCAN) density functionals for predicting compound stability. For 646 decomposition reactions that are not trivially the formation reaction, PBE (MAD = 70 meV/atom) and SCAN (MAD = 59 meV/atom) perform similarly, and commonly employed correction schemes using fitted elemental reference energies make only a negligible improvement (~2 meV/atom). Furthermore, for 231 reactions involving only compounds (Type 2), the agreement between SCAN, PBE, and experiment is within ~35 meV/atom and is thus comparable to the magnitude of experimental uncertainty.

cond-mat.mtrl-sci↗

arXiv2018

Ternary Nitride Semiconductors in the Rocksalt Crystal Structure

Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optoelectronic devices. In contrast, rocksalt-based nitrides are known for their metallic and refractory properties. Breaking this dichotomy, here we report on ternary nitride semiconductors with rocksalt crystal structures, remarkable optoelectronic properties, and the general chemical formula Mg$_{x}$TM$_{1-x}$N (TM=Ti, Zr, Hf, Nb). These compounds form over a broad metal composition range and our experiments show that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8-2.1 eV). Lattice parameters are compatible with growth on a variety of substrates, and epitaxially grown MgZrN$_{2}$ exhibits remarkable electron mobilities approaching 100 cm$^{2}$V$^{-1}$s$^{-1}$. Ab initio calculations reveal that these compounds have disorder-tunable optical properties, large dielectric constants and low carrier effective masses that are insensitive to disorder. Overall, these experimental and theoretical results highlight Mg$_{G-3}$TMN$_{G-2}$ rocksalts as a new class of semiconductor materials with promising properties for optoelectronic applications.

cond-mat.mtrl-sci↗