arXiv subjects

Simona Achilli

Publications and source records attributed to Simona Achilli.

13 recordsLinked to original sources

arXiv2026

Spectral Fingerprints of Resonant Defect Scattering by Substitutional Mn in Graphene

Using substitutional Mn in graphene/Cu(111) as a model point defect, we combine scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) to test the predicted fingerprints of resonant scattering. As the Mn concentration increases to 0.44%, the Dirac point stretching reaches 0.52 eV, while momentum broadening remains energy independent. These spectral fingerprints classify substitutional Mn as a strong resonant scatterer and establish the combination of STM and ARPES as a powerful approach to identify and characterize resonant disorder in graphene.

cond-mat.mes-hall↗

arXiv2026

Iron-mediated on-surface synthesis of substrate-decoupled graphdiyne monolayers

Graphdiynes are emerging two-dimensional sp-sp$^2$ carbon materials with electronic structures complementing those of graphene, yet their on-surface synthesis is limited by the persistence of metalated intermediates or yields disordered covalent networks. Here, we report an iron-assisted route to covalent hydrogenated graphdiyne monolayers on Au(111) from 1,3,5-tris(bromoethynyl)benzene. Low-temperature scanning tunnelling microscopy, X-ray photoelectron spectroscopy and density functional theory show that Fe scavenges chemisorbed Br byproducts forming FeBr$_2$, in turn promoting the removal of Au adatoms from the organometallic network, thus enabling its metalated-to-covalent conversion under mild thermal treatment. Subsequent annealing removes FeBr$_2$ and yields covalent, ordered domains weakly coupled to the substrate. Scanning tunnelling spectroscopy, combined with density functional theory, reveals a semiconducting gap of about 1.6 eV associated with carbon p$_z$ frontier orbitals. This Fe-mediated on-surface synthesis strategy provides a route to atomically precise, weakly substrate-coupled graphdiyne networks and offers a design principle for two-dimensional carbon semiconductors.

cond-mat.mtrl-sci↗

arXiv2026

2D abrupt nano-junctions blending sp-sp2 bonds on atomically precise heterostructures

Two-dimensional heterostructures combining sp-sp2 hybridization,blending graphene with graphyne-based allotropes, offer substantial potential for enhancing the tunability of electronic and transport properties while providing significant structural flexibility. These attributes are desirable for next generation nanoscale electronic applications. Despite such potential, their experimental realization remains elusive, as synthesized carbon heterostructures are limited to doped, graphene-based systems exhibiting exclusively sp2 hybridization. Here, we demonstrate the on-surface synthesis of covalently bonded sp-sp2 lateral heterostructures between graphene nanoribbons and graphdiyne networks on Au(111). Atomic-resolution scanning tunnelling microscopy, combined with density functional theory, reveals the formation mechanism of the covalent interfacial bonds between nanoribbons and graphdiynes, also highlighting the key role of surface chemistry. Bromine atoms deriving from the molecules dehalogenation and chemisorbed along the nanoribbon inhibit the junction formation, but bonding efficiency can be boosted up to 71% by controlled removal of these by-products. Electronic structure and transport calculations show that the 2D heterostructure by itself is characterized by disentangled properties for the two subsystems, forming an atomically narrow junction enabling voltage-tunable spatial current separation in two dimensions. There results define a viable strategy for engineering graphene-based sp-sp2 heterostructures, paving the way for the design and synthesis of all-carbon nanoscale electronic architectures.

cond-mat.mtrl-sci↗

arXiv2024

Unravelling the Band Structure and Orbital Character of a $\pi$-Conjugated 2D Graphdiyne-Based Organometallic Network

Graphdiyne-based carbon systems generate intriguing layered sp-sp$^2$ organometallic lattices, characterized by flexible acetylenic groups connecting planar carbon units through metal centers. At their thinnest limit, they can result in two-dimensional (2D) organometallic networks exhibiting unique quantum properties and even confining the surface states of the substrate, which is of great importance for fundamental studies. In this work, we present the on-surface synthesis of a highly crystalline 2D organometallic network grown on Ag(111). The electronic structure of this mixed honeycomb-kagome arrangement - investigated by angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy - reveals a strong electronic conjugation within the network, leading to the formation of two intense electronic band-manifolds. In comparison to theoretical density functional theory calculations, we observe that these bands exhibit a well-defined orbital character that can be associated with distinct regions of the sp-sp$^2$ monomers. Moreover, we find that the halogen by-products resulting from the network formation locally affect the pore-confined states, causing a significant energy shift. This work contributes to the understanding of the growth and electronic structure of graphdiyne-like 2D networks, providing insights into the development of novel carbon materials beyond graphene with tailored properties.

cond-mat.mes-hall↗

arXiv2022

Steric hindrance in the on-surface synthesis of diethynyl-linked anthracene polymers

Hybrid sp-sp2 structures can be efficiently obtained on metal substrates via on-surface synthesis. The choice of both the precursor and of the substrate impacts on the effectiveness of the process and the stability of the formed structures. Here we demonstrate that using anthracene-based molecules as precursor, the formation on Au(111) of polymers hosting sp carbon chains is affected by the steric hindrance between aromatic groups. In particular, by scanning tunneling microscopy and density functional theory calculations we show that the de-metalation of organometallic structures induces a lateral separation of adjacent polymers preventing the formation of ordered domains.

cond-mat.mtrl-sci↗

arXiv2021

Graphdiynes interacting with metal surfaces: first-principles electronic and vibrational properties

Graphdiynes (GDYs) represent a class of 2D carbon materials based on sp-sp$^2$ hybridization with appealing properties and potential applications. Recent advances have demonstrated the experimental self-assembly of GDYs on metal substrates. Here we focus on $\alpha$- and $\beta$-GDYs on Au(111) and Pt(111), and investigate how their electronic and vibrational properties are affected by the interaction with a metal substrate. We adopt hydrogenated GDY, previously characterized experimentally, as a benchmark for density functional theory simulations, that we apply to show that Au and Pt substrates impose a different degree of distortion on both $\alpha$- and $\beta$-GDY. By comparing the adsorbed and the freestanding structures, we evaluate the effect of the surface interaction on the bandstructure and the simulated Raman spectra. Different charge transfers result in different energy shift of the Dirac cone in semi-metallic $\alpha$-GDY and changes from semiconducting to metallic behavior for $\beta$-GDY. These changes in electronic properties are accompanied by characteristic frequency shifts and modifications of Raman active modes. Our results contribute in the understanding of the metal-interaction effects on GDYs and can open a route to the design of novel 2D materials with tailored properties.

cond-mat.mtrl-sci↗

arXiv2021

Independent and coherent transitions between antiferromagnetic states of few-molecule systems

Spin-electronic devices are poised to become part of mainstream microelectronic technology .Downsizing them, however, faces the intrinsic difficulty that as ferromagnets become smaller, it becomes more difficult to stabilize their magnetic moment. Antiferromagnets are much more stable, and thus research on antiferromagnetic spintronics has developed into a fast-growing field. Here, we provide proof of concept data that allows us to expand the area of antiferromagnetic spintronics to the hitherto elusive level of individual molecules. In contrast to all previous work on molecular spintronics, our detection scheme of the molecule's spin state does not rely on a magnetic moment. Instead, we use field-effect transistor devices constituting of an isolated, contacted single-wall carbon nanotube covalently bound to a limited number of molecular antiferromagnets incorporating four Mn(II) or Co(II) ions. Time-dependent quantum transport measurement along the functionalized nanotube show step-like transitions between several distinct current levels, which we attribute to transitions between different antiferromagnetic states of individual molecular complexes grafted on the nanotube. A statistical analysis of the switching events using factorial cumulants indicates that the cobalt complexes switch independently from each other, while a coherent superposition of the antiferromagnetic spin states of the molecules along the nanotube is observed for the manganese complexes. The long coherence time (several seconds at 100 mK) is made possible by the absence of spin and orbital momentum in the relevant states of the manganese complex, while the cobalt complex includes a significant orbital momentum contribution due to the pseudo-octahedral d$^7$ metal centers.

cond-mat.mes-hall↗

arXiv2021

Magnetic properties of {M$_4$} coordination clusters with different magnetic cores (M=Co, Mn)

We present a joint experimental and theoretical characterization of the magnetic properties of coordination clusters with an antiferromagnetic core of four magnetic ions. Two different compounds are analyzed, with Co and Mn ions in the core. While both molecules are antiferromagnetic, they display different sensitivities to external magnetic field, according to the different strength of the intra-molecular magnetic coupling. In particular, the dependence of the magnetization versus field of the two molecules switches with temperatures: at low temperature the magnetization is smaller in \{Mn$_4$\}, while the opposite happens at high temperature. Through a detailed analysis of the electronic and magnetic properties of the two compounds we identify a stronger magnetic interaction between the magnetic ions in \{Mn$_4$\} with respect to \{Co$_4$\}. Moreover \{Co$_4$\} displays not negligible spin-orbit related effects that could affect the spin lifetime in future antiferromagnetic spintronic applications. We highlight the necessity to account for these spin-orbit effects for a reliable description of these compounds.

physics.chem-ph↗

arXiv2021

Photoinduced coherent modulation of an excitonic resonance via coupling with coherent optical phonons

The coupling of excitons with atomic vibrations plays a pivotal role on the nonequilibrium optical properties of layered semiconductors. However, addressing the dynamical interaction between excitons and phonons represents a hard task both experimentally and theoretically. By means of time-resolved broadband optical reflectivity combined with state-of-the-art ab-initio calculations of a bismuth triiodide single crystal, we unravel the universal spectral fingerprints of exciton--phonon coupling in layered semiconductors. Furthermore, we microscopically relate a photoinduced coherent energy modulation of the excitonic resonance to coherent optical phonons, thereby tracking the extent of the photoinduced atomic displacement in real-space. Our findings represent a step forward on the road to coherent manipulation of the excitonic properties on ultrafast timescales.

cond-mat.other↗

arXiv2021

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.

cond-mat.mtrl-sci↗

arXiv2020

Structural, Electronic, and Vibrational Properties of 2D Graphdiyne-Like Carbon Nanonetwork Synthesized on Au(111): Implications for the Engineering of sp-sp2 Carbon Nanostructures

Graphdiyne, atomically-thin 2D carbon nanostructure based on sp-sp2 hybridization, is an appealing system potentially showing outstanding mechanical and optoelectronic properties. Surface-catalyzed coupling of halogenated sp-carbon-based molecular precursors represents a promising bottom-up strategy to fabricate extended 2D carbon systems with engineered structure on metallic substrates. Here, we investigate the atomic-scale structure and electronic and vibrational properties of an extended graphdiyne-like sp-sp2 carbon nanonetwork grown on Au(111) by means of on-surface synthesis. The formation of such 2D nanonetwork at its different stages as a function of the annealing temperature after the deposition is monitored by scanning tunneling microscopy (STM), Raman spectroscopy and combined with density functional theory (DFT) calculations. High-resolution STM imaging and the high sensitivity of Raman spectroscopy to the bond nature provide a unique strategy to unravel the atomic-scale properties of sp-sp2 carbon nanostructures. We show that hybridization between the 2D carbon nanonetwork and the underlying substrate states strongly affects its electronic and vibrational properties, modifying substantially the density of states and the Raman spectrum compared to the free standing system. This opens the way to the modulation of the electronic properties with significant prospects in future applications as active nanomaterials for catalysis, photoconversion and carbon-based nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2020

Keto-enol tautomerization drives the self-assembly of Leucoquinizarin on Au(111)

The self-assembly of Leucoquinizarin molecule on Au(111) surface is shown to be characterized by the molecules mostly in their keto-enolic tautomeric form, with evidences of their temporary switching to other tautomeric forms. This reveals a metastable chemistry of the assembled molecules, to be considered for their possible employment in the formation of more complex hetero-organic interfaces

cond-mat.mtrl-sci↗

arXiv2018

GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

We characterize germanium-vacancy GeVn complexes in silicon using first-principles Density Functional Theory calculations with screening-dependent hybrid functionals. We report on the local geometry and electronic excited states of these defects, including charge transition levels corresponding to the addition of one or more electrons to the defect. Our main theoretical result concerns the GeV complex, which we show to give rise to two excited states deep in the gap, at -0.51 and -0.35 eV from the conduction band, consistently with the available spectroscopic data. The adopted theoretical scheme, suitable to compute a reliable estimate of the wavefunction decay, leads us to predict that such states are associated to an electron localization over a length of about 0.45 nm. By combining the electronic properties of the bare silicon vacancy, carrying deep states in the band gap, with the spatial controllability arising from single Ge ion implantation techniques, the GeVn complex emerges as a suitable ingredient for silicon-based room-temperature single-atom devices.

physics.comp-ph↗