arXiv subjects

Simon Kurasch

Publications and source records attributed to Simon Kurasch.

4 recordsLinked to original sources

arXiv2014

Functional single-layer graphene sheets from aromatic monolayers

We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic and spectroscopic techniques and by electrical transport measurements. As substrates we successfully use Cu(111) single crystals and the technologically relevant polycrystalline copper foils.

cond-mat.mes-hall↗

arXiv2013

The pristine atomic structure of MoS2 monolayer protected from electron radiation damage by graphene

Materials can, in principle, be imaged at the level of individual atoms with aberration corrected transmission electron microscopy. However, such resolution can be attained only with very high electron doses. Consequently, radiation damage is often the limiting factor when characterizing sensitive materials. Here, we demonstrate a simple and effective method to increase the electron radiation tolerance of materials by using graphene as protective coating. This leads to an improvement of three orders of magnitude in the radiation tolerance of monolayer MoS2. Further on, we construct samples in different heterostructure configurations to separate the contributions of different radiation damage mechanisms.

cond-mat.mtrl-sci↗

arXiv2012

Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping

Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron irradiation. We calculate displacement threshold energies for atoms in 21 different compounds and estimate the corresponding electron energies required to produce defects. For a representative structure of MoS2, we carry out high-resolution transmission electron microscopy experiments and validate our theoretical predictions via observations of vacancy formation under exposure to a 80 keV electron beam. We further show that TMDs can be doped by filling the vacancies created by the electron beam with impurity atoms. Thereby, our results not only shed light on the radiation response of a system with reduced dimensionality, but also suggest new ways for engineering the electronic structure of TMDs.

cond-mat.mtrl-sci↗

arXiv2010

Charged defects in graphene and the ionicity of hexagonal boron nitride in direct images

We report on the detection and charge distribution analysis for nitrogen substitutional dopants in single layer graphene membranes by aberration-corrected high-resolution transmission electron microscopy (HRTEM). Further, we show that the ionicity of single-layer hexagonal boron nitride can be confirmed from direct images. For the first time, we demonstrate by a combination of HRTEM experiments and first-principles electronic structure calculations that adjustments to the atomic potentials due to chemical bonding can be discerned in HRTEM images. Our experiments open a way to discern electronic configurations in point defects or other non-periodic arrangements or nanoscale objects that can not be analyzed in an electron or x-ray diffraction experiment.

cond-mat.mtrl-sci↗