arXiv subjects

Simin Feng

Publications and source records attributed to Simin Feng.

At least 19 recordsLinked to original sources

arXiv2021

Catalyst-Free Growth of Atomically-thin Bi2O2Se Nanoribbons for High-performance Electronics and Optoelectronics

One-dimensional (1D) materials have attracted significant research interest due to their unique quantum confinement effects and edge-related properties. Atomically thin 1D nanoribbon is particularly interesting because it is a valuable platform with physical limits of both thickness and width. Here, we develop a catalyst-free growth method and achieves the growth of Bi2O2Se nanostructures with tunable dimensionality. Significantly, Bi2O2Se nanoribbons with thickness down to 0.65 nm, corresponding to monolayer, are successfully grown for the first time. Electrical and optoelectronic measurements show that Bi2O2Se nanoribbons possess decent performance in terms of mobility, on/off ratio, and photoresponsivity, suggesting their promising for devices. This work not only reports a new method for the growth of atomically thin nanoribbons but also provides a platform to study properties and applications of such nanoribbon materials at thickness limit.

cond-mat.mtrl-sci↗

arXiv2021

Doping Concentration Modulation in Vanadium Doped Monolayer Molybdenum Disulfide for Synaptic Transistors

Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with new functionalities. However, wide-range control of the substitutional doping concentration with large scale uniformity remains challenging in 2D materials. Here we report in-situ chemical vapor deposition growth of vanadium (V) doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 at%. The key to regulate the doping concentration lies in the use of appropriate V precursors with different doping abilities, which also generate a large-scale uniform doping effect. Artificial synaptic transistors were fabricated by using the heavily doped MoS2 as the channel material for the first time. Synaptic potentiation, depression and repetitive learning processes are mimicked by the gate-tunable channel conductance change in such transistors with abundant V atoms to trap/detrap electrons. This work shows a feasible method to dope monolayer 2D semiconductors and demonstrates their use in artificial synaptic transistors.

cond-mat.mtrl-sci↗

arXiv2020

High-Fidelity Transfer of 2D Bismuth Oxyselenide and its Mechanical Properties

Two-dimensional (2D) bismuth oxyselenide (Bi2O2Se) with high electron mobility is advantageous in future high-performance and flexible electronic and optoelectronic devices. However, transfer of thin Bi2O2Se flakes is rather challenging, restricting measurements of its mechanical properties and application exploration in flexible devices. Here, we develop a reliable and effective polydimethylsiloxane (PDMS)-mediated method that allows transferring thin Bi2O2Se flakes from grown substrates onto target substrates like micro-electro-mechanical system substrates. The high fidelity of the transferred thin flakes stems from the high adhesive energy and flexibility of PDMS film. For the first time, the mechanical properties of 2D Bi2O2Se are experimentally acquired with nanoindentation method. We found that few-layer Bi2O2Se exhibits a large intrinsic stiffness of 18-23 GPa among 2D semiconductors, and a Young' s modulus of 88.7 +- 14.4 GPa which is consistent with the theoretical values. Furthermore, few-layer Bi2O2Se can withstand a high radial strain of more than 3%, demonstrating excellent flexibility. The development of the reliable transfer method and documentation of mechanical properties of 2D Bi2O2Se jointly fill the gap between theoretical prediction and experimental verification of mechanical properties of this emerging material, and will promote flexible electronics and optoelectronics based on 2D Bi2O2Se.

cond-mat.mtrl-sci↗

arXiv2020

Synthesis of ultrahigh-quality monolayer molybdenum disulfide through in-situ defect healing with thiol molecules

Monolayer transition metal dichalcogenides (TMDCs) are two-dimensional (2D) materials with many potential applications. Chemical vapour deposition (CVD) is a promising method to synthesize these materials. However, CVD-grown materials generally have poorer quality than mechanically exfoliated ones and contain more defects due to the difficulties in controlling precursors' distribution and concentration during growth where solid precursors are used. Here, we propose to use thiol as a liquid precursor for CVD growth of high quality and uniform 2D MoS2. Atomic-resolved structure characterizations indicate that the concentration of sulfur vacancies in the MoS2 grown from thiol is the lowest among all reported CVD samples. Low temperature spectroscopic characterization further reveals the ultrahigh optical quality of the grown MoS2. Density functional theory simulations indicate that thiol molecules could interact with sulfur vacancies in MoS2 and repair these defects during the growth of MoS2, resulting in high quality MoS2. This work provides a facile and controllable method for the growth of high-quality 2D materials with ultralow sulfur vacancies and high optical quality, which will benefit their optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2020

High Yield Growth and Doping of Black Phosphorus with Tunable Electronic Properties

Black phosphorus (BP) has recently attracted significant interest due to its unique electronic and optical properties. Doping is an effective strategy to tune a material's electronic structures, however, the direct and controllable growth of BP with a high yield and its doping remain a great challenge. Here we report an efficient short-distance transport (SDT) growth approach and achieve the controlled growth of high quality BP with the highest yield so far, where 98% of the red phosphorus is converted to BP. The doping of BP by As, Sb, Bi, Se and Te are also achieved by this SDT growth approach. Spectroscopic results show that doping systematically changes its electronic structures including band gap, work function, and energy band position. As a result, we have found that the air-stability of doped BP samples (Sb and Te-doped BP) improves compared with pristine BP, due to the downshift of the conduction band minimum with doping. This work develops a new method to grow BP and doped BP with tunable electronic structures and improved stability, and should extend the uses of these class of materials in various areas.

cond-mat.mtrl-sci↗

arXiv2020

Vertical CVD Growth of Highly Uniform Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially non-uniform growth dynamics, it is challenging to grow wafer-scale 2D TMDCs with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design to grow monolayer TMDCs with a uniform density and high quality over the whole wafer, and with excellent reproducibility. The use of such VCVD design can easily control the three key growth parameters of precursor concentration, gas flow and temperature, which cannot be done in currently widely-used horizontal CVD system. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by the one-step transfer of VCVD-grown TMDC samples, owning to its good uniformity. This work opens a way to grow 2D materials with high uniformity and reproducibility on the wafer scale, which can be used for the scalable fabrication of 2D materials and their heterostructures.

physics.app-ph↗

arXiv2020

Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition (CVD) growth process. Here, we report a new growth approach called dissolution-precipitation (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminates unwanted gas-phase reaction. This feature gives rise to highly-uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.

cond-mat.mtrl-sci↗

arXiv2018

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 10^2 cm^2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90^o or nearly 180^o. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2.

cond-mat.mes-hall↗

arXiv2015

Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS$_2$: Detection of the commensurate charge density wave phase through Raman scattering

We present first-principles calculations of the vibrational properties of the transition metal dichalcogenide 1T-TaS$_2$ for various thicknesses in the high-temperature (undistorted) phase and the low-temperature commensurate charge density wave (CDW) phase. We also present measurements of the Raman spectra for bulk, few-layer, and monolayer samples at temperatures well below that of the bulk transition to the commensurate phase. Through our calculations, we identify the low-frequency folded-back acoustic modes as a convenient signature of the commensurate CDW wave structure in vibrational spectra. In our measured Raman spectra, this signature is clearly evident in all of the samples, indicating that the commensurate phase remains the ground state as the material is thinned, even down to a single layer. This is in contrast to some previous studies which suggest a suppression of the commensurate CDW transition in thin flakes. We also use polarized Raman spectroscopy to probe c-axis orbital texture in the low-T phase, which has recently been suggested as playing a role in the metal-insulator transition that accompanies the structural transition to the commensurate CDW phase.

cond-mat.mtrl-sci↗

arXiv2015

Metal to insulator quantum-phase transition in few-layered ReS$_2$

In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose concomitant electronic structure might host a non-trivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS$_2$ field-effect transistors. We find that ReS$_2$ exfoliated on SiO$_2$ behaves as an $n$-type semiconductor with an intrinsic carrier mobility surpassing $\mu_i$ ~30 cm$^2$/Vs at $T = 300$ K which increases up to ~350 cm$^2$/Vs at 2 K. Semiconducting behavior is observed at low electron densities $n$, but at high values of n the resistivity decreases by a factor > 7 upon cooling to 2 K and displays a metallic $T^2$-dependence. This indicates that the band structure of 1T$^{\prime}$-ReS$_2$ is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of $T$ and $n$, we find that the metallic state of ReS$_2$ results from a second-order metal to insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.

cond-mat.mes-hall↗

arXiv2015

Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1-2x10^13 /cm^2/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

cond-mat.mes-hall↗

arXiv2015

Dissipation-Induced Super Scattering and Lasing PT-Spaser

Giant transmission and reflection of a finite bandwidth are shown to occur at the same wavelength when the electromagnetic wave is incident on a periodic array of PT-symmetric dimers embedded in a metallic film. Remarkably, we found that this phenomenon vanishes if the metallic substrate is lossless while keeping other parameters unchanged. When the metafilm is adjusted to the vicinity of a spectral singularity, tuning substrate dissipation to a critical value can lead to supper scattering in stark contrast to what would be expected in conventional systems. The PT-synthetic plasmonic metafilm acts as a lasing PT-spaser, a planar source of coherent radiation. The metallic dissipation provides a mean to couple light out of the dark modes of the PT- spaser. Above a critical gain-loss coupling, the metafilm behaves as a meta-gain medium with the meta-gain atoms made from the PT-plasmonic dimers. This phenomenon implies that super radiation is possible from a cavity having gain elements by tuning the cavity dissipation to a critical value.

physics.optics↗

arXiv2014

Field-Effect Transistors Based on Few-Layered alpha-MoTe_2

Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We performed field-effect and Hall mobility measurements, as well as Raman scattering and transmission electron microscopy. In contrast to both MoS_2 and MoSe_2, our MoTe_2 field-effect transistors (FETs) are observed to be hole-doped, displaying on/off ratios surpassing 106 and typical sub-threshold swings of ~ 140 mV per decade. Both field-effect and Hall mobilities indicate maximum values approaching or surpassing 10 cm^2/Vs which are comparable to figures previously reported for single or bi-layered MoS_2 and/or for MoSe_2 exfoliated onto SiO_2 at room temperature and without the use of dielectric engineering. Raman scattering reveals sharp modes in agreement with previous reports, whose frequencies are found to display little or no dependence on the number of layers. Given that both MoS_2 is electron doped, the stacking of MoTe_2 onto MoS_2 could produce ambipolar field-effect transistors and a gap modulation. Although the overall electronic performance of MoTe_2 is comparable to those of MoS_2 and MoSe_2, the heavier element Te should lead to a stronger spin orbit-coupling and possibly to concomitantly longer decoherence times for exciton valley and spin indexes.

cond-mat.mes-hall↗

arXiv2014

Directional perfect absorption using deep subwavelength low permittivity films

We experimentally demonstrate single beam directional perfect absorption (to within experimental accuracy) of p-polarized light in the near-infrared using unpatterned, deep subwavelength films of indium tin oxide (ITO) on Ag. The experimental perfect absorption occurs slightly above the epsilon-near-zero (ENZ) frequency of ITO where the permittivity is less than one. Remarkably, we obtain perfect absorption for films whose thickness is as low as ~1/50th of the operating free-space wavelength and whose single pass attenuation is only ~ 5%. We further derive simple analytical conditions for perfect absorption in the subwavelength-film regime that reveal the constraints that the ITO permittivity must satisfy if perfect absorption is to be achieved. Then, to get a physical insight on the perfect absorption properties, we analyze the eigenmodes of the layered structure by computing both the real-frequency/complex-wavenumber and the complex-frequency/real-wavenumber modal dispersion diagrams. These analyses allow us to attribute the experimental perfect absorption behavior to the crossover between bound and leaky behavior of one eigenmode of the layered structure. Both modal methods show that perfect absorption occurs at a frequency slightly larger than the ENZ frequency, in agreement with experimental results, and both methods predict a second perfect absorption condition at higher frequencies attributed to another crossover between bound and leaky behavior of the same eigenmode. Our results greatly expand the list of materials that can be considered for use as ultrathin perfect absorbers and also provide a methodology for the design of absorber systems at any desired frequency.

physics.optics↗

arXiv2012

Loss enhanced transmission and collimation in anisotropic epsilon-near-zero metamaterials

We verify the extraordinary transmission enhancement and collimation induced by the material loss in anisotropic near-zero permittivity (ENZ) metamaterials, and reveal the physical mechanism of this exotic electromagnetic phenomenon via the iso-frequency contour (IFC) analysis. In addition, we demonstrate the possibility in realization of such loss enhanced transmission of Gaussian beam in realistic silver-germanium multilayered structures by applying full-wave numerical simulations.

physics.optics↗

arXiv2011

Omnidirectionally Bending to the Normal in epsilon-near-Zero Metamaterials

Contrary to conventional wisdom that light bends away from the normal at the interface when it passes from high to low refractive index media, here we demonstrate an exotic phenomenon that the direction of electromagnetic power bends towards the normal when light is incident from arbitrary high refractive index medium to \epsilon-near-zero metamaterial. Moreover, the direction of the transmitted beam is close to the normal for all angles of incidence. In other words, the electromagnetic power coming from different directions in air or arbitrary high refractive index medium can be redirected to the direction almost parallel to the normal upon entering the \epsilon-near-zero metamaterial. This phenomenon is counterintuitive to the behavior described by conventional Snell's law and resulted from the interplay between \epsilon-near-zero and material loss. This property has potential applications in communications to increase acceptance angle and energy delivery without using optical lenses and mechanical gimbals.

physics.optics↗

arXiv2011

Perfect Absorption in Ultrathin Epsilon-Near-Zero Metamaterials Induced by Fast-Wave Non-Radiative Modes

Above-light-line surface plasmon polaritons can arise at the interface between a metal and epsilon-near-zero metamaterial. This unique feature induces unusual fast-wave non-radiative modes in a epsilon-near-zero material/metal bilayer. Excitation of this peculiar mode leads to wide-angle perfect absorption in low-loss ultrathin metamaterials. The ratio of the perfect absorption wavelength to the thickness of the epsilon-near-zero metamaterial can be as high as 10^4; the electromagnetic energy can be confined in a layer as thin as {\lambda}/10000. Unlike conventional fast-wave leaky modes, these fast-wave non-radiative modes have quasi-static capacitive features that naturally match with the space-wave field, and thus are easily accessible from free space. The perfect absorption wavelength can be tuned from mid- to far-infrared by tuning the epsilon = 0 wavelength while keeping the thickness of the structure unchanged.

physics.optics↗

arXiv2011

Exotic leaky wave radiation from anisotropic epsilon near zero metamaterials

We investigate the emission of electromagnetic waves from biaxial subwavelength metamaterials. For tunable anisotropic structures that exhibit a vanishing dielectric response along a given axis, we find remarkable variation in the launch angles of energy associated with the emission of leaky wave radiation. We write closed form expressions for the energy transport velocity and corresponding radiation angle $\phi$, defining the cone of radiation emission, both as a functions of frequency, and material and geometrical parameters. Full wave simulations exemplify the broad range of directivity that can be achieved in these structures.

physics.optics↗