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Shuai Dong

Publications and source records attributed to Shuai Dong.

At least 91 records · Page 5Linked to original sources

Noncollinear ferrielectricity and hydrogen-induced ferromagnetic polar half-metallicity in MnO$_3$Cl

Collinear dipole orders such as ferroelectricity and antiferroelectricity have developed rapidly in last decades. While, the noncollinear dipole orders are rarely touched in solids. Noncollinear dipole orders can provide a route to realize ferrielectricity. Based on first-principles calculations, an inorganic molecular crystal MnO$_3$Cl has been demonstrated to own intrinsic noncollinear ferrielectricity, which originates from the stereo orientations of polar molecules. The large negative piezoelectricity effect ($d_{33}\sim-27$ pC/N) is also predicted. A strong light absorption and moderate optical anisotropy are found for this molecular crystal in the ultraviolet light window. Additionally, by electron doping via hydrogen intercalation, a ferromagnetic polar half-metals can be obtained. Our study here provide a material platform to explore the intriguing physics of noncollinear ferrielectricity and potential applications in devices.

cond-mat.mtrl-sci↗

Magnetoelectric imprint of skyrmions in van der Waals bilayers

To effectively track and manipulate topological solitons (e.g. skyrmions) are the key challenge before their applications. Inspired by the idea of sliding ferroelectricity, here a general strategy is proposed to print magnetic skyrmions to electric skyrmions in van der Waals bilayers. Through the proximate interactions, there is an isoperiodic bijection relationship between local dipoles and spin moments. This magnetoelectric imprint effect not only extends the strategies to create electric skyrmions, but also leads to an approach for all-electrical readout/manipulation of magnetic skyrmions.

cond-mat.mtrl-sci↗

Record-large magnetically driven polarization in room temperature ferromagnets Os$X_2$ monolayers

Magnetically induced ferroelectrics in multiferroics provide an optimal approach to pursuit intrinsically strong magnetoelectricity. However, the complex antiferromagnetism, faint magnetically induced polarization, and low working temperatures make their magnetoelectric performance incompetent from the applications demands. Here, a family of two-dimensional $5d$ halides Os$X_2$ monolayers is predicted to be ferroelectric and ferromagnetic above room temperature. More interestingly, benefiting from the strong spin-orbital coupling and high-spin state of Os$^{2+}$ ion, the magnetically induced ferroelectric polarization can reach $5.9$ $μ$C/cm$^2$, a record-large value in type-II multiferroics. The magnetoelectric effect, that is, controlling ferroelectric polarization by magnetic field has been demonstrated, and magnetically driven ferrovalley also emerges in this system. This work provides an effective way to solve the main defects of type-II multiferroics.

cond-mat.mtrl-sci↗

Recent advances in understanding and manipulating magnetic and electronic properties of Eu$M_2X_2$ ($M$ = Zn, Cd; $X$ = P, As)

Over the past five years, significant progress has been made in understanding the magnetism and electronic properties of CaAl$_2$Si$_2$-type Eu$M_2X_2$ ($M$ = Zn, Cd; $X$ = P, As) compounds. Prior theoretical work and experimental studies suggested that EuCd$_2$As$_2$ had the potential to host rich topological phases, particularly an ideal magnetic Weyl semimetal state when the spins are polarized along the c axis. However, this perspective is challenged by recent experiments utilizing samples featuring ultra-low carrier densities, as well as meticulous calculations employing various approaches. Nonetheless, the Eu$M_2X_2$ family still exhibit numerous novel properties that remain to be satisfactorily explained, such as the giant nonlinear anomalous Hall effect and the colossal magnetoresistance effect. Moreover, Eu$M_2X_2$ compounds can be transformed from semiconducting antiferromagnets to metallic ferromagnets by introducing a small number of carriers or applying external pressure, and a further increase in the ferromagnetic transition temperature can be achieved by reducing the unit cell volume. These features make the Eu$M_2X_2$ family a fertile platform for studying the interplay between magnetism and charge transport, and an excellent candidate for applications in spintronics. This paper presents a comprehensive review of the magnetic and transport behaviors of Eu$M_2X_2$ compounds with varying carrier densities, as well as the current insights into these characteristics. An outlook for future research opportunities is also provided.

cond-mat.mtrl-sci↗

Double-leaf Riemann surface topological converse magnetoelectricity

Electric field control of magnetism in solids, i.e. the converse magnetoelectricity, is highly desired for applications of scalable energy-efficient logic devices. However, it is not only a technical challenge but also a scientific paradox, since in principle the electric and magnetic degrees of freedom obey distinct rules of symmetries. Despite the great progresses obtained in the community of multiferroics during the past decades, the success of magnetoelectricity remains on its way and more alternative approaches with conceptual revolution are urgently needed. Here, by introducing the concept of topology into multiferroics, an exotic magnetoelectric double-leaf Riemann-surface is unveiled based on the mechanism of spin-dependent $d-p$ hybridization in a two-dimensional magnet: GdI$_2$ monolayer. Protected by the topology, a $180^\circ$ spin reversal can be precisely achieved by an electric cycle, leading to a robust and dissipationless converse magnetoelectric function. Such a topological magnetoelectricity allows the nontrivial manipulation of magnetization by AC electric field. In this category, more candidate materials with better performance are designed targetedly, which pave the road to the potential applications with topological magnetoelectrics.

cond-mat.mtrl-sci↗

Dzyaloshinskii-Moriya interaction torques and domain wall dynamics in van der Waals heterostructures

Since the discovery of two-dimensional ferroelectric and ferromagnetic materials, the van der Waals (vdW) heterostructures constructed by ferroelectric and ferromagnetic monolayers have soon become the ideal platforms to achieve converse magnetoelectric functions at the nanoscale, namely to use electric field to control magnetization. In this Letter, by employing density functional theory calculations and dynamic simulations of atomic spin model, we study the key role of interfacial Dzyaloshinshii-Moriya interaction (DMI) in CrI$_3$-In$_2$Se$_3$ vdW heterostructures. Our work demonstrates feasible DMI torques pumped by ferroelectric switching, which can drive current-free and low-energy consumption domain wall motion. Moreover, such interfacial DMI can also significantly enlarge the Walker field in magnetic field-driven domain wall technique.

cond-mat.mtrl-sci↗

Quasi-one-dimensional sliding ferroelectricity in NbI$_4$

Sliding ferroelectricity was originally proposed to elucidate the out-of-plane polarization generated by a specific stacking arrangement of non-polar van der Waals layers. However, the concept of sliding ferroelectricity can be generalized to more geometries. Here, the NbI$_4$ bulk is theoretical demonstrated as a quasi-one-dimensional sliding ferroelectric material, which exhibits a polarization of $0.11$ $μ$C/cm$^2$ perpendicular to the Nb's chains. The most possible ferroelectric switching path is found to be via the interchain sliding along the chain direction, while other paths like Peierls-dimerization of Nb pairs may also work. Moreover, its polarization can be augmented for $82\%$ by hydrostatic pressure up to $10$ GPa, beyond which NbI$_4$ becomes a polar metal. In addition, the negative longitudinal piezoelectricity is also predicted.

cond-mat.mtrl-sci↗

Manipulating magnetism and transport properties of EuCd$_2$P$_2$ with a low carrier concentration

Materials that exhibit strongly coupled magnetic order and electronic properties are crucial for both fundamental research and technological applications. However, finding a material that not only shows remarkable magnetoresistive responses but also has an easily tunable ground state remains a challenge. Here, we report successful manipulation of the magnetic and transport properties of EuCd$_2$P$_2$, which is transformed from an A-type antiferromagnet ($T_\mathrm{N}$ = 11 K) exhibiting colossal magnetoresistance into a ferromagnet ($T_\mathrm{C}$ = 47 K) with metallic behavior. The dramatic alteration results from a low hole concentration of $10^{19}$ cm$^{-3}$ induced by changing the growth conditions. Electronic structure and total energy calculations confirm the tunability of magnetism with a small carrier concentration for EuCd$_2$P$_2$. It is feasible to switch between the magnetic states by using field-effect to control the carrier density, thereby changing the magneto-electronic response. The controllable magnetism and electrical transport of EuCd$_2$P$_2$ make it a potential candidate for spintronics.

cond-mat.mtrl-sci↗

Carrier-induced transition from antiferromagnetic insulator to ferromagnetic metal in the layered phosphide EuZn$_2$P$_2$

EuZn$_2$P$_2$ was reported to be an insulating antiferromagnet with $T_\mathrm{N}$ of 23.5 K. In this study, single crystals of EuZn$_2$P$_2$ exhibiting metallic behavior and a ferromagnetic order of 72 K ($T_\mathrm{C}$) are successfully synthesized via a salt flux method. The presence of hole carriers induced by the Eu vacancies in the lattice is found to be crucial for the drastic changes in magnetism and electrical transport. The carriers mediate the interlayer ferromagnetic interaction, and the coupling strength is directly related to $T_\mathrm{C}$, as evidenced by the linear dependence of $T_\mathrm{C}$ and the fitted Curie-Weiss temperatures on the Eu-layer distances for ferromagnetic Eu$M_2X_2$ ($M$ = Zn, Cd; $X$ = P, As). The ferromagnetic EuZn$_2$P$_2$ shows conspicuous negative magnetoresistance (MR) near $T_\mathrm{C}$, owing to strong magnetic scattering. The MR behavior is consistent with the Majumdar-Littlewood model, indicating that the MR can be enhanced by decreasing the carrier density. Our findings suggest that Eu$M_2X_2$ has highly tunable magnetism and charge transport, making it a promising material family for potential applications in spintronics.

cond-mat.mtrl-sci↗

NAFRSSR: a Lightweight Recursive Network for Efficient Stereo Image Super-Resolution

Stereo image super-resolution (SR) refers to the reconstruction of a high-resolution (HR) image from a pair of low-resolution (LR) images as typically captured by a dual-camera device. To enhance the quality of SR images, most previous studies focused on increasing the number and size of feature maps and introducing complex and computationally intensive structures, resulting in models with high computational complexity. Here, we propose a simple yet efficient stereo image SR model called NAFRSSR, which is modified from the previous state-of-the-art model NAFSSR by introducing recursive connections and lightweighting the constituent modules. Our NAFRSSR model is composed of nonlinear activation free and group convolution-based blocks (NAFGCBlocks) and depth-separated stereo cross attention modules (DSSCAMs). The NAFGCBlock improves feature extraction and reduces number of parameters by removing the simple channel attention mechanism from NAFBlock and using group convolution. The DSSCAM enhances feature fusion and reduces number of parameters by replacing 1x1 pointwise convolution in SCAM with weight-shared 3x3 depthwise convolution. Besides, we propose to incorporate trainable edge detection operator into NAFRSSR to further improve the model performance. Four variants of NAFRSSR with different sizes, namely, NAFRSSR-Mobile (NAFRSSR-M), NAFRSSR-Tiny (NAFRSSR-T), NAFRSSR-Super (NAFRSSR-S) and NAFRSSR-Base (NAFRSSR-B) are designed, and they all exhibit fewer parameters, higher PSNR/SSIM, and faster speed than the previous state-of-the-art models. In particular, to the best of our knowledge, NAFRSSR-M is the lightest (0.28M parameters) and fastest (50 ms inference time) model achieving an average PSNR/SSIM as high as 24.657 dB/0.7622 on the benchmark datasets. Codes and models will be released at https://github.com/JNUChenYiHong/NAFRSSR.

eess.IV↗

Picturing the Gap Between the Performance and US-DOE's Hydrogen Storage Target: A Data-Driven Model for MgH2 Dehydrogenation

Developing solid-state hydrogen storage materials is as pressing as ever, which requires a comprehensive understanding of the dehydrogenation chemistry of a solid-state hydride. Transition state search and kinetics calculations are essential to understanding and designing high-performance solid-state hydrogen storage materials by filling in the knowledge gap that current experimental techniques cannot measure. However, the ab initio analysis of these processes is computationally expensive and time-consuming. Searching for descriptors to accurately predict the energy barrier is urgently needed, to accelerate the prediction of hydrogen storage material properties and identify the opportunities and challenges in this field. Herein, we develop a data-driven model to describe and predict the dehydrogenation barriers of a typical solid-state hydrogen storage material, magnesium hydride (MgH2), based on the combination of the crystal Hamilton population orbital of Mg-H bond and the distance between atomic hydrogen. By deriving the distance energy ratio, this model elucidates the key chemistry of the reaction kinetics. All the parameters in this model can be directly calculated with significantly less computational cost than conventional transition state search, so that the dehydrogenation performance of hydrogen storage materials can be predicted efficiently. Finally, we found that this model leads to excellent agreement with typical experimental measurements reported to date and provides clear design guidelines on how to propel the performance of MgH2 closer to the target set by the United States Department of Energy (US-DOE).

cond-mat.mtrl-sci↗

Sliding-mediated ferroelectric phase transition in CuInP2S6 under pressure

Interlayer stacking order has recently emerged as a unique degree of freedom to control crystal symmetry and physical properties in two-dimensional van der Waals (vdW) materials and heterostructures. By tuning the layer stacking pattern, symmetry-breaking and electric polarization can be created in otherwise non-polar crystals, whose polarization reversal depends on the interlayer sliding motion. Herein, we demonstrate that in a vdW layered ferroelectric, its existing polarization is closely coupled to the interlayer sliding driven by hydrostatic pressure. Through combined structural, electrical, vibrational characterizations, and theoretical calculations, we clearly map out the structural evolution of CuInP2S6 under pressure. A tendency towards a high polarization state is observed in the low-pressure region, followed by an interlayer-sliding-mediated phase transition from a monoclinic to a trigonal phase. Along the transformation pathway, the displacive-instable Cu ion serves as a pivot point that regulates the interlayer interaction in response to external pressure. The rich phase diagram of CuInP2S6, which is enabled by stacking orders, sheds light on the physics of vdW ferroelectricity and opens an alternative route to tailoring long-range order in vdW layered crystals.

cond-mat.mtrl-sci↗

Two-dimensional 5d multiferroic W3Cl8: breathing Kagome lattice and tunable magneto-optical Kerr effect

Owing to the strong spin-orbit coupling and the related fascinating physical properties, heavy 5d transition-metals exhibit desirable application prospects. However, up to now, the 5d magnetic materials are still very limited, especially very rare for tungsten. In this work, we theoretically predict a two-dimensional multiferroic W3Cl8 monolayer. Intrinsic 5d magnetism of tungsten is activated by the W ions' fractional valence in a breathing Kagome lattice of reduced effective dimension. A coplanar Y-type antiferromagnetism composed by ferromagnetic W3 trimers is confirmed as the magnetic ground state. The spontaneous ferroelectric polarization mainly originates from the ion displacement induced by the breathing distortion of Kagome lattice. An intrinsic magneto-optical Kerr effect with sizable Kerr angle can be observed to detect this trimeric Y-type antiferromagnetism, and it depends strongly on the detailed magnetic order. Thereby, we propose a general scheme for realizing more 5d magnetism in two-dimensional multiferroic systems.

cond-mat.mes-hall↗

Structural dimerization and charge-orbital ordering in a ferromagnetic semiconductor LiV2S4 monolayer

With the rise of two-dimensional (2D) materials, unique properties that are completely distinct from bulk counterparts continue to emerge at low-dimensional scales, presenting numerous opportunities and challenges. It also provides a new perspective for the study of transition metal system. Here, based on density functional theory (DFT), the physical properties of 2D monolayer LiV2S4 have been studied. Remarkable changes have been observed, i.e., vanadium dimerization, ferromagnetism, charge distribution and metal-insulator transition (MIT). It is argued that the electronic instability leads to the V dimerization which further lifts the degeneracy of charge distribution and stabilizes the charge and spin ordering state.

cond-mat.mtrl-sci↗

Oxidation tuning of ferroic transitions in Gd$_2$C monolayer

Tuning of ferroic phases provides great opportunities for material functionalities, especially in two-dimensional materials. Here, a $4f$ rare-earth carbide Gd$_2$C monolayer is predicted to be ferromagnetic metal with large magnetization, inherited from its bulk property. Based on first-principles calculations, we propose a strategy that the surface passivation can effectively tune its ferroicity, namely switching among ferromagnetic, antiferromagnetic, and ferroelectric phases. Metal-insulator transition also occurs accompanying these ferroic transitions. Our calculation also suggests that the magneto-optic Kerr effect and second harmonic generation are effective methods to monitor these phase transitions.

cond-mat.mtrl-sci↗

Alterferroicity with seesaw-type magnetoelectricity

Primary ferroicities like ferroelectricity and ferromagnetism are essential physical properties of matter. Multiferroics, with coexisting multiple ferroic orders in a single phase, provide a convenient route to magnetoelectricity. Even so, the general trade-off between magnetism and polarity remains inevitable, which prevents practicable magnetoelectric cross control in the multiferroic framework. Here an alternative strategy, i.e. the so-called alterferroicity, is proposed to circumvent the magnetoelectric exclusiveness, which exhibits multiple but non-coexisting ferroic orders. The natural exclusion between magnetism and polarity, as an insurmountable weakness of multiferroicity, becomes a distinct advantage in alterferroicity, making it an inborn rich ore for intrinsic strong magnetoelectricity. The general design rules for alterferroic materials rely on the competition between the instabilities of phononic and electronic structures in covalent systems. Based on primary density functional theory calculations, Ti-based trichalcogenides are predicted to be alterferroic candidates, which exhibit unique seesaw type magnetoelectricity. This alterferroicity, as an emerging branch of ferroic family, re-shapes the framework of magnetoelectricity, going beyond the established scenario based on multiferroicity.

cond-mat.mtrl-sci↗

Metal-to-insulator transition in oxide semimetals by anion doping

Oxide semimetals exhibiting both nontrivial topological characteristics stand as exemplary parent compounds and multiple degrees of freedom, offering great promise for the realization of novel electronic states. In this study, we present compelling evidence of profound structural and transport phase shifts in a recently uncovered oxide semimetal, SrNbO3, achieved through effective in-situ anion doping. Notably, a remarkable increase in resistivity of more than three orders of magnitude at room temperature is observed upon nitrogen-doping. The extent of electronic modulation in SrNbO3 is strongly correlated with the misfit strain, underscoring its phase instability to both chemical doping and crystallographic symmetry variations. Using first-principles calculations, we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO3-dNd. Consequently, a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3. This investigation sheds light on the potential of anion engineering in oxide semimetals, offering pathways for manipulating their physical properties. These insights hold promise for future applications that harness these materials for tailored functionalities.

cond-mat.mtrl-sci↗

Large in-plane negative piezoelectricity and giant nonlinear optical susceptibility in elementary ferroelectric monolayers

Negative piezoelectrics contract in the direction of applied electric field, which are opposite to normal piezoelectrics and rare in dielectric materials. The raising of low dimensional ferroelectrics, with unconventional mechanisms of polarity, opens a fertile branch for candidates with prominent negative piezoelectricity. Here, the distorted $α$-Bi monolayer, a newly-identified elementary ferroelectric with puckered black phosphorous-like structure [J. Guo, {\it et al}. Nature \textbf{617}, 67 (2023)], is computationally studied, which manifests a large negative in-plane piezoelectricity (with $d_{33}\sim-26$ pC/N). Its negative piezoelectricity originates from its unique buckling ferroelectric mechanism, namely the inter-column sliding. Consequently, a moderate tensile strain can significantly reduce its ferroelectric switching energy barrier, while the compressive strain can significantly enhance its prominent nonlinear optical response. The physical mechanism of in-plane negative piezoelectricity also applies to other elementary ferroeletric monolayers.

cond-mat.mtrl-sci↗