arXiv subjects

Shouvik Chatterjee

Publications and source records attributed to Shouvik Chatterjee.

18 recordsLinked to original sources

arXiv2026

Quasiparticle properties below coherence onset in YbAl3 nanostructures

Mesoscopic transport measurements are underexplored as probes of quasiparticles and their properties in correlated metals. The mixed valence compound YbAl$_3$ exhibits a single-ion Kondo temperature of 670 K, while thermodynamic and transport properties (probed with specific heat, magnetic susceptibility, Hall effect, and resistivity) imply the onset of coherence of heavy fermion quasiparticles at T$* \approx$ 37 K. To characterize these quasiparticles, we utilize mesoscopic techniques familiar from weakly correlated conductors. In lithographically-defined nanowires etched from epitaxial films, we observe weak antilocalization magnetoresistance and universal conductance fluctuations, consistent with electronic coherence lengths of tens of nanometers. Additionally, analysis of Johnson-Nyquist noise measurements as a function of bias current reveal, within the context of a range of accepted models, a significant electron-phonon energy loss that increases with decreasing temperature, a finding that we contextualize within the broader properties of YbAl$_3$.

cond-mat.str-el↗

arXiv2025

A Rapid Thermal Chemical Vapor Deposition System for Fast Synthesis of Epitaxial Graphene Under Ambient Pressure

Graphene has emerged as a promising material for next-generation electronic and thermal devices owing to its exceptional charge transport and thermal conductivity. However, high-quality samples are predominantly obtained via mechanical exfoliation from graphite crystals, a process that inherently lacks scalability. Despite extensive efforts toward large-area synthesis, cost-effective approaches for producing high-quality, large-area, single-crystalline graphene with fast turnaround time remain limited. Here, we report the design, fabrication, and performance benchmarking of a rapid thermal chemical vapor deposition (RTCVD) system capable of synthesizing epitaxial monolayer graphene under atmospheric pressure. The entire growth process, from sample loading to unloading, is achieved within $25$ minutes with a temperature ramp rate exceeding $23^\circ\mathrm{C}/s$. Growth at atmospheric pressure eliminates the need for vacuum components, thereby reducing both system complexity and operational costs. The structural and electronic quality of epitaxial graphene is comprehensively characterized using Raman spectroscopy, selected area electron diffraction (SAED), and magnetotransport measurements, which reveal signatures of quantum Hall effect in synthesized graphene samples. Furthermore, we demonstrate van der Waals epitaxial growth of palladium (Pd) thin films on graphene transferred to Si/SiO$_{2}$ substrates, establishing its single-crystalline nature over a large area and its potential as a versatile platform for subsequent heteroepitaxial growth.

cond-mat.mtrl-sci↗

arXiv2024

Four-fold Anisotropic Magnetoresistance in Antiferromagnetic Epitaxial Thin Films of MnPt$_{x}$Pd$_{1-x}$

Antiferromagnets are emerging as promising alternatives to ferromagnets in spintronics applications. A key feature of antiferromagnets is their anisotropic magnetoresistance (AMR), which has the potential to serve as a sensitive marker for the antiferromagnetic order parameter. However, the underlying origins of this behavior remains poorly understood, particularly, in thin film geometries. In this study, we report the observation of AMR in epitaxial thin films of the collinear L1$_{0}$ antiferromagnet MnPt$_{x}$Pd$_{1-x}$. In the thicker films, AMR is dominated by a non-crystalline two-fold component, which emerges from domain reconfiguration and spin canting under applied magnetic field. As the film thickness is reduced, however, a crystalline four-fold component emerges, accompanied by the appearance of uncompensated magnetic moment, which strongly modifies the magnetotransport properties in the thinner films. We demonstrate that interfacial interactions lead to a large density of states (DOS) at the Fermi level. This enhanced DOS, combined with disorder in the thinner films, stabilizes the uncompensated moment and results in a four-fold modulation of the DOS as the Neel vector rotates, explaining the observed AMR behavior.

cond-mat.mtrl-sci↗

arXiv2024

Linear non-saturating magnetoresistance and superconductivity in epitaxial thin films of YbSb$_{2}$

Rare-earth diantimonides display intriguing ground states often associated with structural order, which can be manipulated in thin film geometries. In this study, we report epitaxial synthesis of one such compound, YbSb$_{2}$, on III-V substrates using molecular-beam epitaxy. The synthesized thin films exhibit large, non-saturating, linear magnetoresistance across a wide magnetic field range. Additionally, they demonstrate superconducting properties, with a critical temperature of $\approx$ 1.025 K and a critical field of $\approx$ 83.85 Oe, consistent with the reports in bulk single crystals. While YbSb$_{2}$ has been classified as a Type-I superconductor in its bulk form, our findings provide evidence of a mixed state in the epitaxial thin films. This work paves the way for controlling the electronic ground state in this class of materials through thin film engineering.

cond-mat.supr-con↗

arXiv2024

Imprinting electrically switchable scalar spin chirality by anisotropic strain in a Kagome antiferromagnet

Topological chiral antiferromagnets, such as Mn$_{3}$Sn, are emerging as promising materials for next-generation spintronic devices due to their intrinsic transport properties linked to exotic magnetic configurations. Here, we demonstrate that anisotropic strain in Mn$_{3}$Sn thin films offers a novel approach to manipulate the magnetic ground state, unlocking new functionalities in this material. Anisotropic strain reduces the point group symmetry of the manganese (Mn) Kagome triangles from $C_{3v}$ to $C_{1}$, significantly altering the energy landscape of the magnetic states in Mn$_{3}$Sn. This symmetry reduction enables even a tiny in-plane Dzyaloshinskii-Moriya (DM) interaction to induce canting of the Mn spins out of the Kagome plane. The modified magnetic ground state introduces a finite scalar spin chirality and results in a significant Berry phase in momentum space. Consequently, a large anomalous Hall effect emerges in the Kagome plane at room temperature - an effect that is absent in the bulk material. Moreover, this two-fold degenerate magnetic state enables the creation of multiple-stable, non-volatile anomalous Hall resistance (AHR) memory states. These states are field-stable and can be controlled by thermal assisted current-induced magnetization switching requiring modest current densities and small bias fields, thereby offering a compelling new functionality in Mn$_{3}$Sn for spintronic applications.

cond-mat.mtrl-sci↗

arXiv2023

Using simulation to design an MPC policy for field navigation using GPS sensing

Modeling a robust control system with a precise GPS-based state estimation capability in simulation can be useful in field navigation applications as it allows for testing and validation in a controlled environment. This testing process would enable navigation systems to be developed and optimized in simulation with direct transferability to real-world scenarios. The multi-physics simulation engine Chrono allows for the creation of scenarios that may be difficult or dangerous to replicate in the field, such as extreme weather or terrain conditions. Autonomy Research Testbed (ART), a specialized robotics algorithm testbed, is operated in conjunction with Chrono to develop an MPC control policy as well as an EKF state estimator. This platform enables users to easily integrate custom algorithms in the autonomy stack. This model is initially developed and used in simulation and then tested on a twin vehicle model in reality, to demonstrate the transferability between simulation and reality (also known as Sim2Real).

cs.RO↗

arXiv2022

Tuning the Band Topology of GdSb by Epitaxial Strain

Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb (001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that biaxial strain continuously tunes the electronic structure from topologically trivial to nontrivial, reducing the gap between the hole and the electron bands dispersing along the [001] direction. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.

cond-mat.mtrl-sci↗

arXiv2022

Defect engineering and Fermi-level tuning in half-Heusler topological semimetals

Three-dimensional topological semimetals host a range of interesting quantum phenomena related to band crossing that give rise to Dirac or Weyl fermions, and can be potentially engineered into novel quantum devices. Harvesting the full potential of these materials will depend on our ability to position the Fermi level near the symmetry-protected band crossings so that their exotic spin and charge transport properties become prominent in the devices. Recent experiments on bulk and thin films of topological half-Heuslers show that the Fermi level is far from the symmetry-protected crossings, leading to strong interference from bulk bands in the observation of topologically protected surface states. Using density functional theory calculations we explore how intrinsic defects can be used to tune the Fermi level in the two representative half-Heusler topological semimetals PtLuSb and PtLuBi. Our results explain recent results of Hall and angle-resolved photoemission measurements. The calculations show that Pt vacancies are the most abundant intrinsic defects in these materials grown under typical growth conditions, and that these defects lead to excess hole densities that place the Fermi level significantly below the expected position in the pristine material. Directions for tuning the Fermi level by tuning chemical potentials are addressed.

cond-mat.mtrl-sci↗

arXiv2022

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. We present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. ARPES shows hole-carrier rich topologically-trivial semi-metallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum well states. DFT predicted Fermi wavevectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.

cond-mat.mtrl-sci↗

arXiv2020

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb

Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise give rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g-factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.

cond-mat.mtrl-sci↗

arXiv2020

THz range Faraday rotation in the Weyl Semimetal Candidate $\mathrm{Co_2TiGe}$

The $\mathrm{Co_2}$ family of ferromagnetic Heusler alloys have attracted interest due to their fully spin-polarized nature, making them ideal for applications in spintronic devices. More recently, the existence of room temperature time-reversal-breaking Weyl nodes near the Fermi level was predicted and confirmed in these systems. As a result of the presence of these Weyl nodes, these systems possess a non-zero momentum space Berry curvature that can dramatically influence transport properties such as the anomalous Hall effect. One of these candidate compounds is $\mathrm{Co_2 Ti Ge}$. Recently, high quality molecular beam epitaxy-grown thin films of $\mathrm{Co_2 Ti Ge}$ have become available. In this work, we present THz-range measurement of MBE-grown $\mathrm{Co_2 Ti Ge}$ films. We measure the THz-range Faraday rotation, which can be understood as a measure of the anomalous Hall effect. We supplement this work with electronic band structure calculations showing that the principal contribution to the anomalous Hall effect in the this material stems from the Berry curvature of the material. Our work shows that this class of Heusler materials shows promise for Weyl semimetal based spintronics.

cond-mat.mes-hall↗

arXiv2020

Strong, Temperature-Dependent Spin-Orbit Torques in Heavy Fermion YbAl$_3$

The use of current-generated spin-orbit torques[1] to drive magnetization dynamics is under investigation to enable a new generation of non-volatile, low-power magnetic memory. Previous research has focused on spin-orbit torques generated by heavy metals[2-8], interfaces with strong Rashba interactions[9,10] and topological insulators [11-14]. These families of materials can all be well-described using models with noninteracting-electron bandstructures. Here, we show that electronic interactions within a strongly correlated heavy fermion material, the Kondo lattice system YbAl$_{3}$, can provide a large enhancement in spin-orbit torque. The spin-torque conductivity increases by approximately a factor of 4 as a function of decreasing temperature from room temperature to the coherence temperature of YbAl$_{3}$ ($T^* \approx 37$ K), with a saturation at lower temperatures, achieving a maximum value greater than any heavy metal element. This temperature dependence mimics the increase and saturation at $T^*$ of the density of states at the Fermi level arising from the ytterbium 4$f$-derived heavy bands in the Kondo regime, as measured by angle-resolved photoemission spectroscopy[15]. We therefore identify the many-body Kondo resonance as the source of the large enhancement of spin-orbit torque in YbAl$_{3}$. Our observation reveals new opportunities in spin-orbit torque manipulation of magnetic memories by engineering quantum many-body states.

cond-mat.mes-hall↗

arXiv2020

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, non-saturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a novel, two-dimensional, interfacial hole gas and is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultra-thin limit. Our work lays out a general strategy of utilizing confined thin film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously, provides insights into its origin.

cond-mat.mtrl-sci↗

arXiv2019

Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films

Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation is identified as a mechanism responsible for large magnetoresistance in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi-two-dimensional behavior is observed in our thin films for both electron and holelike carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up new possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis.

cond-mat.mtrl-sci↗

arXiv2017

Lifshitz transition from valence fluctuations in YbAl3

In Kondo lattice systems with mixed valence, such as YbAl3, interactions between localized electrons in a partially filled f shell and delocalized conduction electrons can lead to fluctuations between two different valence configurations with changing temperature or pressure. The impact of this change on the momentum-space electronic structure and Fermi surface topology is essential for understanding their emergent properties, but has remained enigmatic due to a lack of appropriate experimental probes. Here by employing a combination of molecular beam epitaxy (MBE) and in situ angle-resolved photoemission spectroscopy (ARPES) we show that valence fluctuations can lead to dramatic changes in the Fermi surface topology, even resulting in a Lifshitz transition. As the temperature is lowered, a small electron pocket in YbAl3 becomes completely unoccupied while the low-energy ytterbium (Yb) 4f states become increasingly itinerant, acquiring additional spectral weight, longer lifetimes, and well-defined dispersions. Our work presents the first unified picture of how local valence fluctuations connect to momentum space concepts including band filling and Fermi surface topology in the longstanding problem of mixed-valence systems.

cond-mat.str-el↗

arXiv2017

A tunable low-energy photon source for high-resolution angle-resolved photoemission spectroscopy

We describe a tunable low-energy photon source consisting of a laser-driven xenon plasma lamp coupled to a Czerny-Turner monochromator. The combined tunability, brightness, and narrow spectral bandwidth make this light source useful in laboratory-based high-resolution photoemission spectroscopy experiments. The source supplies photons with energies up to ~7 eV, delivering under typical conditions >10^12 ph/s within a 10 meV spectral bandwidth, which is comparable to helium plasma lamps and many synchrotron beamlines. We first describe the lamp and monochromator system and then characterize its output, with attention to those parameters which are of interest for photoemission experiments. Finally, we present angle-resolved photoemission spectroscopy data using the light source and compare its performance to a conventional helium plasma lamp.

physics.ins-det↗

arXiv2016

Epitaxial growth and electronic properties of mixed valence YbAl3 thin films

We report the growth of thin films of the mixed valence compound YbAl$_{3}$ on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction, in situ low-energy electron diffraction and aberration-corrected scanning transmission electron microscopy we establish that the films are ordered in the bulk as well as at the surface. Our films show a coherence temperature of 37 K, comparable to that reported for bulk single crystals. Photoelectron spectroscopy reveals contributions from both $\textit{f}^{13}$ and $\textit{f}^{12}$ final states establishing that YbAl$_{3}$ is a mixed valence compound and shows the presence of a Kondo Resonance peak near the Fermi-level.

cond-mat.mtrl-sci↗

arXiv2013

Formation of the coherent heavy fermion liquid at the 'hidden order' transition in URu2Si2

In this article we present high-resolution angle-resolved photoemission (ARPES) spectra of the heavy-fermion superconductor URu$_2$Si$_2$. Measurements as a function of both excitation energy and temperature allow us to disentangle a variety of spectral features, revealing the evolution of the low energy electronic structure across the hidden order transition. Already above the hidden order transition our measurements reveal the existence of weakly dispersive states below the Fermi level that exhibit a large scattering rate. Upon entering the hidden order phase, these states transform into a coherent heavy fermion liquid that hybridizes with the conduction bands.

cond-mat.str-el↗