arXiv subjects

Shiyong Wang

Publications and source records attributed to Shiyong Wang.

At least 19 recordsLinked to original sources

arXiv2026

Chiral superconductors and competing states across a Lifshitz transition in rhombohedral pentalayer graphene

Rhombohedral multilayer graphene hosts a distinctive low-energy electronic structure in which strong Coulomb interactions and nontrivial quantum geometry intertwine to generate exotic quantum states. Recent experiments reported signatures of chiral superconductivity in electron-doped rhombohedral multilayer graphene within the spin- and valley-polarized regime. Here we map the normal-state fermiology surrounding chiral superconductivity in rhombohedral pentalayer graphene. Quantum oscillation measurements reveal an electrically controlled Lifshitz transition between a simply-connected circular quarter-metal Fermi surface and an annular quarter-metal Fermi surface. The Lifshitz boundary itself shifts with perpendicular magnetic field, consistent with the strongly momentum-dependent orbital magnetic moment of the low-energy band. Approaching the transition from either side, the electron effective mass becomes strongly enhanced, implying the formation of a nearly dispersionless band bottom and a strongly reduced kinetic-energy scale. This singular electronic structure produces a regime of exceptionally strong instability in which chiral superconductivity competes with Wigner crystalline phases and reentrant quantum Hall states. In particular, two superconducting regions with signatures of orbital time-reversal-symmetry breaking lie on opposite sides of the Lifshitz boundary and have comparable transition temperatures, yet the annular-side state is suppressed by a substantially smaller perpendicular magnetic field. Our calculation finds comparable chiral pairing tendencies on the two parent Fermi surfaces while producing a much lower orbital-Zeeman pair-breaking scale and an additional finite-momentum pairing tendency for the annular state. These results identify Fermi-surface topology as a key control parameter for chiral superconductivity in rhombohedral graphene.

cond-mat.mes-hall↗

arXiv2026

Supercurrent effect in a charge density wave intertwined superconductor

The energy-momentum (E-k) dispersion of quasiparticles constitutes a fundamental concept in condensed matter systems. The ability to modify the E-k dispersion, exemplified by supercurrent-induced Doppler shifts of Bogoliubov quasiparticle spectra in superconductors, enables manipulation of various emergent quantum properties. However, investigations into the supercurrent effect on superconductors intertwined with charge orders remain scarce. Here, we report that the Meissner current, generated by the diamagnetic response to an applied in-plane magnetic field, can tailor Bogoliubov quasiparticle excitations at the precursor charge density wave (CDW) vectors. Our scanning tunneling spectroscopic imaging reveals a field-driven symmetry breaking of CDW modulations, specifically a C3v-to-Cs transition, in superconducting NbSe2. Model calculations suggest that the observed anisotropy originates from a selective Doppler-shift-induced E-k dispersion reconstruction. Furthermore, altering the field direction enables on-demand tuning of anisotropic CDW modulations and visualization of their momentum-space distribution. These results highlight a novel mechanism for controlling emergent electronic phases through momentum-space engineering.

cond-mat.supr-con↗

arXiv2026

Multiple Superconducting Phases in Rhombohedral Heptalayer Graphene

Crystalline rhombohedral multilayer graphene (RMG) has emerged as an ideal platform for studying unconventional superconductivity. Here, we report the observation of superconductivity in moir\'eless rhombohedral heptalayer graphene (RHG) at zero magnetic field. The superconducting phases emerge at low displacement electric fields (|D| < 0.2 V/nm) and are symmetrically distributed about D = 0, with one robust state exhibiting zero resistance and two weaker superconducting features. Comparisons with rhombohedral pentalayer graphene (RPG) reveal distinct perpendicular magnetic-field responses, and quantum oscillation measurements indicate that superconductivity in RHG arises from a half-metallic normal state. These results highlight the strong dependence of superconductivity on layer number and electronic structure in RMG systems and provide new insights into its microscopic origin.

cond-mat.mes-hall↗

arXiv2026

Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moir\'e superlattices

Moir\'e superlattices based on rhombohedral multilayer graphene have emerged as a highly tunable platform for engineering correlated topological phases. Here, we systematically investigate the transport properties of the hole-doped side in rhombohedral tetralayer graphene/ hexagonal boron nitride (hBN) moir\'e superlattices across a range of twist angles and alignment orientations. Notably, we observed multiple high-Chern-number Chern insulators, including the previously reported integer Chern insulator with Chern number C = -4 at moir\'e filling factor v = -1 and newly discovered symmetry-broken Chern insulating states with C = +3, $\pm$2, $\pm$1 at fractional moir\'e fillings of v = -2.5 or -2.6. These Chern insulating states emerge in both hBN alignment, but exhibit a sensitive moir\'e wavelength dependence. Our findings demonstrate the exceptional tunability of these high-Chern-number states via moir\'e wavelength, displacement electric field and external magnetic field, underscoring the distinct topological landscape realized in hole-doped RTG/hBN moir\'e superlattices.

cond-mat.mes-hall↗

arXiv2026

Symplectic connection third-order Hall effect in a room-temperature ferromagnet

Third-order nonlinear Hall effects (THE) have recently attracted considerable experimental interest as powerful probes for quantum geometric properties in emergent quantum materials, encompassing quadrupole moments of quantum metric and Berry curvature. Here, we report a fundamentally new THE in room-temperature van der Waals ferromagnet Fe3GaTe2 from second-order Berry connection polarizability, which manifests a higher-order characterization of band geometry called symplectic connection. Our observations show that the third-order transverse response in Fe3GaTe2 is odd to magnetization, vanishes above the Curie temperature and remains independent of driving current directions. Scaling law analysis combined with first-principles calculations establishes this response as the symplectic-connection-induced THE. This discovery opens the door to probing high-order quantum geometric properties beyond Berry curvature and quantum metric through nonlinear transport, unveiling the potential of exploring nonlinear Hall phenomena in broad classes of magnets without breaking inversion symmetry. Moreover, the room-temperature manipulation of THE holds promises for device applications based on harnessing the quantum-geometric connection structure.

cond-mat.mes-hall↗

arXiv2026

Strongly entangled Quantum Spin Rings driven by H\"uckel rule

Quantum spin rings represent an intriguing platform for studying unconventional magnetic order and exotic quantum phases, and they are also promising materials for emerging quantum technologies. Conventional spin systems consist of a set of weakly interacting localized spins that are well described by the Heisenberg spin models. Here, we demonstrate that strong interactions between radical centers in macrocycles of different sizes lead to fluctuations in the total number of unpaired electrons and to non-trivial antiferromagnetic order that extends beyond the Heisenberg picture. We demonstrate that the electronic structure of these spin rings is governed by the concept of 4n/4n+2 H\"uckel (anti)aromaticity for even-membered rings, whereas odd-membered rings possess a highly degenerate frustrated magnetic ground state. The strongly coupled spin rings are experimentally realized through the on-surface synthesis of {\pi}-magnetic carbon-based macrocycles, which consist of [2]triangulene units. The close correlation between the electronic structure and the H\"uckel aromaticity rule is revealed by scanning tunneling spectroscopy and multireference calculations. This work establishes a novel design principle employing the concept of H\"uckel aromaticity for quantum spin macrocycles.

cond-mat.mes-hall↗

arXiv2026

Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2

Moir\'e semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moir\'e potential. However, limited interlayer coupling strength and the lack of efficient tuning methods hinder further exploration of correlated phenomena in moir\'e semiconductors. Here we introduce a cryogenic dual-gated diamond-anvil platform using helium as a pressure medium, enabling reversible hydrostatic tuning together with magneto-optical spectroscopy in twisted bilayer WSe2. Pressure enhances the moir\'e potential, redshifts excitons, and stabilizes Stoner ferromagnetism otherwise absent at a 3.1-degree twist. Simultaneously, the half-filled C = 1 Chern insulating state strengthens, exhibiting a reduced saturation field. Moreover, we observe a topological phase transition from a Chern insulator to a Mott insulator at around 2 GPa. First-principles calculations reveal that a Gamma-to-K valence-band-maximum switching drives this transition by converting an Ising-like topological K-valley miniband into a spin-degenerate trivial Gamma miniband. Our findings demonstrate hydrostatic pressure as a powerful, continuous control axis for correlated magnetism and topological band engineering in moir\'e materials.

cond-mat.mtrl-sci↗

arXiv2026

Quantum Spin-1/2 Rings Built from [2]Triangulene Molecular Units

Quantum spin rings represent fundamental model systems that exhibit distinctive quantum phenomena-such as quantum critical behavior and quasiparticle excitations-arising from their periodic boundary conditions and enhanced quantum fluctuations. Here, we report the on-surface synthesis and atomic-scale characterization of antiferromagnetic S=1/2 quantum spin rings composed of pristine and unmodified [2]triangulene units on a Au(111) surface. Using stepwise on-surface synthesis followed by STM tip-induced dehydrogenation, we precisely constructed cyclic five- and six-membered spin rings and investigated their spin states via scanning probe microscopy and multireference calculations. Nc-AFM imaging reveals that the six-membered ring retains a planar geometry, whereas the five-membered ring exhibits pronounced structural distortion. The six-membered ring hosts a uniform excitation gap that can be accurately described by a Heisenberg spin model and multireference CASCI calculations. In contrast, the distorted five-membered ring displays spin ground states with asymmetric spatial distributions due to degeneracy lifting induced by structural distortion. Our findings establish a versatile molecular platform for exploring correlated magnetism and quantum spin phenomena in cyclic organic magnetic architectures with disorder.

cond-mat.mtrl-sci↗

arXiv2026

Interplay of Quantum Size Effect and Tensile Strain on Surface Morphology of Sn(100) Islands

The quantum size effect (QSE) and strain effect are two key factors influencing the surface morphology of thin films, which can increase film surface roughness through QSE-induced thickness oscillation and strain-induced island formation, respectively. Surface roughness usually manifests in the early stages of film growth and diminishes beyond a critical thickness. In this work, we employ molecular beam epitaxy (MBE) to grow Sn(100) islands with varying thickness N on bilayer graphene-terminated 6H-SiC(0001) substrates. Scanning tunneling microscopy and spectroscopy measurements reveal an inverse surface roughness effect that highlights the interplay of QSE and misfit strain in shaping the surface morphology of Sn(100) islands. For N =< 10, the islands exhibit flat surfaces, while for N >= 26, the island surfaces become corrugated and patterned. For the intermediate range, i.e., 12 =< N =<24, both flat and patterned surfaces coexist, with the percentage coverage of the patterned surface oscillating as a function of N. By performing density functional theory calculations, we demonstrate that the unusual surface pattern evolution in our MBE-grown Sn(100) islands is a result of the interplay between QSE-induced surface roughing and tensile strain-induced smoothening effect.

cond-mat.mtrl-sci↗

arXiv2026

Superconductivity in non-centrosymmetric rhombohedral NbSe2

Crystal stacking offers a powerful yet underexplored route to engineer symmetry in layered superconductors. Here we report superconductivity in rhombohedral-stacked NbSe2 (3R-NbSe2), a non-centrosymmetric polytype in which global inversion symmetry is removed by stacking alone. Using comprehensive structural, transport, magnetic, and thermodynamic measurements, we establish superconductivity as a bulk property of the 3R phase and find that the in-plane upper critical field exceeds the Pauli paramagnetic limit, indicating the persistence of strong Ising-type spin-orbit coupling. Unlike the thickness-dependent superconductivity in centrosymmetric 2H-NbSe2, the superconducting transition temperature in 3R-NbSe2 shows little dependence on layer number but exhibits an unusually strong sensitivity to disorder. We further observe strongly enhanced nonlinear optical and electrical responses near the superconducting transition, consistent with stacking-induced inversion-symmetry breaking. Our results identify 3R-NbSe2 as a single-phase platform in which stacking engineering reshapes superconductivity and enables nonlinear transport phenomena in layered materials.

cond-mat.supr-con↗

arXiv2025

From fractional Chern insulators to topological electronic crystals in moir\'e MoTe2: quantum geometry tuning via remote layer

The quantum geometry of Bloch wavefunctions,encoded in the Berry curvature and quantum metric, is believed to be a decisive ingredient in stabilizing fractional quantum anomalous Hall (FQAH) effect(i.e., fractional Chern insulator, FCI, at zero magnetic field), against competing symmetry-breaking phases.A direct experimental demonstration of quantum geometry-driven switching between distinct correlated topological phases, however, has been lacking. Here, we report experimental evidence of such a switch in a high-quality 3.7 twisted MoTe2 (tMoTe2) device consisting of both A-A bilayer and A-AB trilayer regions. While composite Fermi liquid CFL/FQAH phases are established in A-A tMoTe2,the A-AB region-effectively an A-A moire bilayer proximitized by a remote B layer-develops a series of topological electronic crystal (TEC, also referred to as generalized QAH crystal, QAHC) states with integer quantized Hall conductance at commensurate fractional fillings v=1/2, 2/3, and an incommensurate filling factor v=0.53.The electrostatic phase diagram is mapped out by combined transport and optical measurements, showing that these TEC states emerge within the first moir'e valence band prior to any charge transfer to the B layer. Exact diagonalization (ED) incorporating the remote-layer-induced intralayer potential demonstrates a transition from a CFL-like manifold in the A-A limit to a Chern number C=1 ground-state consistent with a TEC at v=1/2 , accompanied by the further breakdown of ideal band geometry. Our results provide experimental evidence of quantum geometry-tuned competition between FQAH/CFL and TEC phases in a moir\'e Chern band and pave the way for further exploring correlation-driven topological phenomena by tuning quantum geometry.

cond-mat.mes-hall↗

arXiv2025

Coexistence of unconventional spin-orbit torque and in-plane Hall effect in a single ferromagnetic layer

The symmetry of a material fundamentally governs its spin transport properties. While unconventional spin transport phenomena have been predominantly explored in low-symmetry systems (e.g., $C_{1v}$ symmetry), high-symmetry crystals--which constitute the majority of industry-compatible materials--are generally expected to exhibit only conventional spin-transport behavior. Here, we report the coexistence of two unconventional spin transport effects, the crystal spin-orbit torque (CSOT) and the crystal in-plane Hall effect (CIHE), in a CoPt single ferromagnetic layer with $C_{3v}$ symmetry. Leveraging the CSOT, we achieve nearly 100% field-free perpendicular magnetization switching in a 6 nm CoPt layer at room temperature. Simultaneously, the CIHE observed in this material exhibits nearly identical dependencies on both current angle and growth temperature as the CSOT. Symmetry analysis confirms that both effects share a common physical origin. Our work not only establishes CoPt as a high-performance spin-orbit material, but also demonstrates that unconventional spin transport can be realized in high-symmetry systems, thereby opening a broad pathway for their application in practical spintronics.

cond-mat.mes-hall↗

arXiv2025

Atomically-resolved exciton emission from single defects in MoS$_2$

Understanding how atomic defects shape the nanoscale optical properties of two-dimensional (2D) semiconductors is essential for advancing quantum technologies and optoelectronics. Using scanning tunneling spectroscopy (STS) and luminescence (STML), we correlate the atomic structure and optical fingerprints of individual defects in monolayer MoS$_2$. A bilayer of hexagonal boron nitride (hBN) effectively decouples MoS$_2$ from the graphene substrate, increasing its band gap and extending the defect charge state lifetime. This enables the observation of sharp STML emission lines from MoS$_2$ excitons and trions exhibiting nanoscale sensitivity to local potential fluctuations. We identify the optical signatures of common point defects in MoS$_2$: sulfur vacancies (Vac$_\text{S}^-$), oxygen substitutions (O$_\text{S}$), and negatively charged carbon-hydrogen complexes (CH$_\text{S}^-$). While Vac$_\text{S}^-$ and O$_\text{S}$ only suppress pristine excitonic emission, CH$_\text{S}^-$ generate defect-bound exciton complexes ($A^-X$) about 200\,meV below the MoS$_2$ exciton. Sub-nanometer-resolved STML maps reveal large spectral shifts near charged defects, concurrent with the local band bending expected for band-to-defect optical transitions. These results establish an atomically precise correlation between structure, electronic states, and optical response, enabling deterministic engineering of quantum emitters in 2D materials.

cond-mat.mtrl-sci↗

arXiv2025

Fabrication and Characterization of the Moir\'e surface state on a topological insulator

A Moire superlattice on the topological insulator surface is predicted to exhibit many novel properties but has not been experimentally realized. Here, we developed a two-step growth method to successfully fabricate a topological insulator Sb2Te3 thin film with a Moire superlattice, which is generated by a twist of the topmost layer via molecular beam epitaxy. The established Moire topological surface state is characterized by scanning tunneling microscopy and spectroscopy. By application of a magnetic field, new features in Landau levels arise on the Moire region compared to the pristine surface of Sb2Te3, which makes the system a promising platform for pursuing next-generation electronics. Notably, the growth method, which circumvents contamination and the induced interface defects in the manual fabrication method, can be widely applied to other van der Waals materials for fabricating Moire superlattices.

cond-mat.mtrl-sci↗

arXiv2025

Quantum-size effect induced Andreev bound states in ultrathin metallic islands proximitized by a superconductor

While Andreev bound states (ABSs) have been realized in engineered superconducting junctions, their direct observation in normal metal/superconductor heterostructures-enabled by quantum confinement-remains experimentally elusive. Here, we report the detection of ABSs in ultrathin metallic islands (Bi, Ag, and SnTe) grown on the s-wave superconductor NbN. Using high-resolution scanning tunneling microscopy and spectroscopy, we clearly reveal in-gap ABSs with energies symmetric about the Fermi level. While the energies of these states show no position dependence, their wave functions exhibit spatial oscillations, demonstrating a quantum size effect. Both the energy levels and spatial distribution of the ABSs can be reproduced by our effective model in which a metallic island is coupled to the superconducting substrate via the proximity effect. We demonstrate that the coupling strength plays a critical role in determining the ABS energies. Our work introduces a novel physical platform for implementing ABSs, which hold promise for significant device applications.

cond-mat.supr-con↗

arXiv2025

Stacking-orientation and twist-angle control on integer and fractional Chern insulators in moir\'e rhombohedral graphene

Rhombohedral-stacked multilayer graphene aligned with hexagonal boron nitride has emerged as an excellent platform for investigating exotic quantum phenomena arising from the interplay between electron correlations and nontrivial topology. However, the microscopic mechanism governing the emergence of both the integer and fractional Chern insulator states in this system remains an open question. In this work, we systematically investigate the electrical transport properties of RMG/hBN moir\'e devices with controlled alignment orientations and twist angles. We demonstrate that alignment orientation strongly modulates correlated phenomena in the moir\'e-proximal regime, while having negligible influence on the formation of integer and fractional Chern insulators in the moir\'e-distant regime. Instead, the moir\'e periodicity, tuned by the twist angle, serves as the key parameter controlling the stability of these correlated topological states in the moir\'e-distant regime. Furthermore, in the moir\'e-proximal regime of one specific alignment, we observe anomalous Hall effect and a variety of competing phases near {\nu} = 1, including integer Chern insulator states, extended Chern insulator states, and trivial insulators, whose stability is highly sensitive to both the applied displacement electric field and magnetic field. Our results underscore the critical role of stacking-alignment and twist-angle engineering in exploring novel quantum states based on rhombohedral-stacked multilayer graphene moir\'e systems.

cond-mat.mes-hall↗

arXiv2025

Engineering excitonic metal-insulator transitions in ultra-thin doped copper sulfides

Delicate engineering of the bands remains challenging due to complex electronic, structural, and compositional interplay. We demonstrate the formation of distinct metallic and insulating ground states in ultra-thin copper sulfide films by effectively tuning the band structure via changing the composition of Cu and S in the system. Using angle-resolved photoemission spectroscopy (ARPES), we observed a continuous band renormalization and opening of a full gap at low temperatures over a wide range of doping. The electronic origin of this metal-insulator transition is supported by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED) measurements, which show no indication of superlattice modulation and lattice symmetry breaking. The evidence of excitonic insulating phase is further provided by carrier density dependent transitions, a combined effect of electron screening and Coulomb interaction strength. Our findings demonstrate tunability of the band structure of copper sulfides, allowing for new opportunities to study exotic quantum phases.

cond-mat.str-el↗

arXiv2025

Density-dependent spin susceptibility and effective mass in monolayer MoSe2

Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth contacts, enabling reliable ohmic contact down to low electron densities, with a maximum Hall mobility of approximately 22,000 cm2/Vs. Low-temperature transport measurements illustrate metal-insulator transitions, and density-dependent quantum oscillation sequences. Enhanced spin susceptibility and density-dependent effective mass are observed, attributed to interaction effects and valley polarization. These findings establish monolayer MoSe2 as a versatile platform for further exploring interaction-driven quantum states.

cond-mat.mes-hall↗