arXiv subjects

Shimeng Yu

Publications and source records attributed to Shimeng Yu.

At least 37 records · Page 2Linked to original sources

arXiv2026

ChatNeuroSim: An LLM Agent Framework for Automated Compute-in-Memory Accelerator Deployment and Optimization

Compute-in-Memory (CIM) architectures have been widely studied for deep neural network (DNN) acceleration by reducing data transfer overhead between the memory and computing units. In conventional CIM design flows, system-level CIM simulators (such as NeuroSim) are leveraged for design space exploration (DSE) across different hardware configurations and DNN workloads. However, CIM designers need to invest substantial effort in interpreting simulator manuals and understanding complex parameter dependencies. Moreover, extensive design-simulation iterations are often required to identify optimal CIM configurations under hardware constraints. These challenges severely prolong the DSE cycle and hinder rapid CIM deployment. To address these challenges, this work proposes ChatNeuroSim, a large language model (LLM)-based agent framework for automated CIM accelerator deployment and optimization. ChatNeuroSim automates the entire CIM workflow, including task scheduling, request parsing and adjustment, parameter dependency checking, script generation, and simulation execution. It also integrates the proposed CIM optimizer using design space pruning, enabling rapid identification of optimal configurations for different DNN workloads. ChatNeuroSim is evaluated on extensive request-level testbenches and demonstrates correct simulation and optimization behavior, validating its effectiveness in automatic request parsing and task execution. Furthermore, the proposed design space pruning technique accelerates CIM optimization process compared to no-pruning baseline. In the case study optimizing Swin Transformer Tiny under 22 nm technology, the proposed CIM optimizer achieves a 0.42$\times$-0.79$\times$ average runtime reduction compared to the same optimization algorithm without design space pruning.

cs.AR↗

arXiv2026

HAVEN: High-Bandwidth Flash Augmented Vector Engine for Large-Scale Approximate Nearest-Neighbor Search Acceleration

Retrieval-Augmented Generation (RAG) relies on large-scale Approximate Nearest Neighbor Search (ANNS) to retrieve semantically relevant context for large language models. Among ANNS methods, IVF-PQ offers an attractive balance between memory efficiency and search accuracy. However, achieving high recall requires reranking which fetches full-precision vectors for reranking, and the billion-scale vector databases need to reside in CPU DRAM or SSD due to the limited capacity of GPU HBM. This off-GPU data movement introduces substantial latency and throughput degradation. We propose HAVEN, a GPU architecture augmented with High-Bandwidth Flash (HBF) which is a recently introduced die-stacked 3D NAND technology engineered to deliver terabyte-scale capacity and hundreds of GB/s read bandwidth. By integrating HBF and near-storage search unit as an on-package complement to HBM, HAVEN enables the full-precision vector database to reside entirely on-device, eliminating PCIe and DDR bottlenecks during reranking. Through detailed modeling of re-architected 3D NAND subarrays, power-constrained HBF bandwidth, and end-to-end IVF-PQ pipelines, we demonstrate that HAVEN improves reranking throughput by up to 20x and latency up to 40x across billion-scale datasets compared to GPU-DRAM and GPU-SSD systems. Our results show that HBF-augmented GPUs enable high-recall retrieval at throughput previously achievable only without reranking, offering a promising direction for memory-centric AI accelerators.

cs.AR↗

arXiv2026

Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2

Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of dipoles is expected to remain uniform. We report on the direct observation of nonuniform and nearly discrete vertical arrangements of dipoles in ZrO2 thin films consisting of closely spaced head-to-head (HH) and tail-to-tail (TT) charged 180 degree walls, each exhibiting a distinct bulk-like structure. These charged domain walls (CDWs) further compress the irreducibly narrow, laterally stacked domains vertically to a thickness of 1-2.75 nm, yielding in-plane domains with sub-nm2 footprints-among the smallest ever reported for any ferroelectric material. The HH and TT walls form due to their flat longitudinal optical (LO) polar bands and are electrostatically stabilized by bound-charge compensation via interstitial oxygen atoms, which act as natural structural defects at the HH walls. Moreover, these walls are predicted to be conducting and to exhibit ultralow propagation barriers, with HH walls (1.6 meV) being far more mobile than TT walls (22.3 meV), indicating strong potential for low-voltage, domain-wall-based nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2026

The First Switch Effect in Ferroelectric Field-Effect Transistors

In this work, a ferroelectric field-effect transistor (FEFET) is systematically characterized and compared with an equivalent standard MOSFET with an equivalent oxide thickness. We show that these two devices, with a silicon channel, exhibit similar pristine state transfer characteristics but starkly different endurance characteristics. In contrast to the MOSFET, the FEFET shows a significant increase in sub-threshold swing in the first write pulse. Based on this, we reveal that this first write pulse (cycle 1) generates more than half of the total traps generated during the fatigue cycling in FEFETs. We call this the 'First Switch Effect'. Further, by polarizing a pristine FEFET step by step, we demonstrate a direct correlation between the switched polarization and interface trap density during the first switch. Through charge pumping measurements, we also observe that continued cycling generates traps more towards the bulk of the stack, away from the Si/SiO2 interface in FEFETs. We establish that: (1) the first switch effect leads to approximately 50% of the total trap density (Nit) near the Si/SiO2 interface until memory window closure; and (2) further bipolar cycling leads to trap generation both at and away from Si/SiO2 interface in FEFETs.

cond-mat.mtrl-sci↗

arXiv2025

Pulse-Mode Operation and Reliability of BEOL-Compatible Ferroelectric Non-Volatile Capacitive Memories with Amorphous Oxide Semiconductor Channels

Non-volatile capacitive memories (nvCAPs) exhibiting AC small-signal capacitance on/off ratio (Con/Coff) with non-destructive read have emerged as a promising device for next-generation memory paradigms. Recently, BEOL-compatible ferroelectric nvCAPs with an amorphous oxide semiconductor channel have been reported, suggesting the possibility of monolithic 3D integration of nvCAPs on top of CMOS. So far, the characterization studies on oxide-channel ferroelectric nvCAPs have been done using dual DC sweep C-V measurements which are typically performed over a time scale of a few seconds. However, non-volatile memory arrays typically require nvCAPs to operate under pulse-mode. It is thus crucial to advance understanding of the behavior of oxide-channel ferroelectric nvCAPs under pulse-mode operation, governed by the unique interplay between ferroelectric layer and oxide channel physics. In this study, we provide a systematic study of the pulse-mode operation of ferroelectric nvCAPs with an amorphous oxide semiconductor channel, including its pulse-based write characteristics and reliability characteristics. We examine overlap area, wake-up and pulse-width dependent Con and Coff writing characteristics under pulse-mode. Further, we suggest the importance of optimizing ferroelectric depolarization for Con retention, while reducing read-after-delay for Coff retention under pulse-mode. Lastly, non-destructive read operation for >10^9 read stress cycles at |Vread|=1V is demonstrated.

cond-mat.mtrl-sci↗

arXiv2025

Row Hammer Effect and Floating Body Effect of Monolithic 3D Stackable 1T1C DRAM

Monolithic 3D stackable 1T1C DRAM technology is on the rise, with initial prototypes reported by the industry. This work presents a comprehensive reliability study focusing on the intricate interplay between the row hammer effect and the floating body effect. First, using a TCAD model of a 3D DRAM mini-array, we categorize different cases of adjacent cells and show that the notorious row hammer effect induced by charge migration is significantly mitigated compared to 2D DRAM. However, we found that when incorporating an impact ionization model to account for the floating body characteristics of the silicon access transistor, the capacitive coupling between vertically stacked cells is severely exacerbated. Second, we conduct an in-depth investigation into the floating body effect itself. We systematically examine the dependence of this effect on key device parameters, including body thickness, doping concentration, and gate work function.

physics.app-ph↗

arXiv2025

Cryogenic Characterization of Ferroelectric Non-volatile Capacitors

Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are susceptible to thermal noise limiting the effective number of bits (ENOB) for the weighted sum. A direct way to reduce this thermal noise is by lowering the temperature as thermal noise is proportional to temperature. In this work, we first characterize the non-volatile capacitors (nvCaps) on a foundry 28 nm platform at cryogenic temperatures to evaluate the memory window, ON state retention as a function of temperature down to 77K, and then use the calibrated device models to simulate the capacitive crossbar arrays in SPICE at lower temperatures to demonstrate higher ENOB (~5 bits) for 128x128 multiple-and-accumulate (MAC) operations.

cs.ET↗

arXiv2025

FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash

The rapid expansion of mass spectrometry (MS) data, now exceeding hundreds of terabytes, poses significant challenges for efficient, large-scale library search - a critical component for drug discovery. Traditional processors struggle to handle this data volume efficiently, making in-storage computing (ISP) a promising alternative. This work introduces an ISP architecture leveraging a 3D Ferroelectric NAND (FeNAND) structure, providing significantly higher density, faster speeds, and lower voltage requirements compared to traditional NAND flash. Despite its superior density, the NAND structure has not been widely utilized in ISP applications due to limited throughput associated with row-by-row reads from serially connected cells. To overcome these limitations, we integrate hyperdimensional computing (HDC), a brain-inspired paradigm that enables highly parallel processing with simple operations and strong error tolerance. By combining HDC with the proposed dual-bound approximate matching (D-BAM) distance metric, tailored to the FeNAND structure, we parallelize vector computations to enable efficient MS spectral library search, achieving 43x speedup and 21x higher energy efficiency over state-of-the-art 3D NAND methods, while maintaining comparable accuracy.

cs.AR↗

arXiv2025

Stratum: System-Hardware Co-Design with Tiered Monolithic 3D-Stackable DRAM for Efficient MoE Serving

As Large Language Models (LLMs) continue to evolve, Mixture of Experts (MoE) architecture has emerged as a prevailing design for achieving state-of-the-art performance across a wide range of tasks. MoE models use sparse gating to activate only a handful of expert sub-networks per input, achieving billion-parameter capacity with inference costs akin to much smaller models. However, such models often pose challenges for hardware deployment due to the massive data volume introduced by the MoE layers. To address the challenges of serving MoE models, we propose Stratum, a system-hardware co-design approach that combines the novel memory technology Monolithic 3D-Stackable DRAM (Mono3D DRAM), near-memory processing (NMP), and GPU acceleration. The logic and Mono3D DRAM dies are connected through hybrid bonding, whereas the Mono3D DRAM stack and GPU are interconnected via silicon interposer. Mono3D DRAM offers higher internal bandwidth than HBM thanks to the dense vertical interconnect pitch enabled by its monolithic structure, which supports implementations of higher-performance near-memory processing. Furthermore, we tackle the latency differences introduced by aggressive vertical scaling of Mono3D DRAM along the z-dimension by constructing internal memory tiers and assigning data across layers based on access likelihood, guided by topic-based expert usage prediction to boost NMP throughput. The Stratum system achieves up to 8.29x improvement in decoding throughput and 7.66x better energy efficiency across various benchmarks compared to GPU baselines.

cs.AR↗

arXiv2025

Hardware Acceleration of Kolmogorov-Arnold Network (KAN) in Large-Scale Systems

Recent developments have introduced Kolmogorov-Arnold Networks (KAN), an innovative architectural paradigm capable of replicating conventional deep neural network (DNN) capabilities while utilizing significantly reduced parameter counts through the employment of parameterized B-spline functions with trainable coefficients. Nevertheless, the B-spline functional components inherent to KAN architectures introduce distinct hardware acceleration complexities. While B-spline function evaluation can be accomplished through look-up table (LUT) implementations that directly encode functional mappings, thus minimizing computational overhead, such approaches continue to demand considerable circuit infrastructure, including LUTs, multiplexers, decoders, and related components. This work presents an algorithm-hardware co-design approach for KAN acceleration. At the algorithmic level, techniques include Alignment-Symmetry and PowerGap KAN hardware aware quantization, KAN sparsity aware mapping strategy, and circuit-level techniques include N:1 Time Modulation Dynamic Voltage input generator with analog-compute-in-memory (ACIM) circuits. This work conducts evaluations on large-scale KAN networks to validate the proposed methodologies. Non-ideality factors, including partial sum deviations from process variations, have been evaluated with statistics measured from the TSMC 22nm RRAM-ACIM prototype chips. Utilizing optimally determined KAN hyperparameters in conjunction with circuit optimizations fabricated at the 22nm technology node, despite the parameter count for large-scale tasks in this work increasing by 500Kx to 807Kx compared to tiny-scale tasks in previous work, the area overhead increases by only 28Kx to 41Kx, with power consumption rising by merely 51x to 94x, while accuracy degradation remains minimal at 0.11% to 0.23%, demonstrating the scaling potential of our proposed architecture.

cs.AR↗

arXiv2025

Architecting Long-Context LLM Acceleration with Packing-Prefetch Scheduler and Ultra-Large Capacity On-Chip Memories

Long-context Large Language Model (LLM) inference faces increasing compute bottlenecks as attention calculations scale with context length, primarily due to the growing KV-cache transfer overhead that saturates High Bandwidth Memory (HBM). While prefetching techniques mitigate cache misses by fetching KV data in advance, their spatial and temporal benefits present new opportunities to exploit. This work proposes a packing-prefetch scheduling architecture with monolithic 3D (M3D) back-end-of-line (BEOL) compatible embedded memories with ultra-large on-chip capacity to accelerate long-context LLM inference. Our optimizations demonstrate 8.06x decode speedup and 1.83x overall latency reduction on Llama3.1-8B using TPUv6e-like hardware with additional 512MB BEOL memories over the serial execution. Evaluations of multi-request workloads on TPU-like architectures show 1.7x-2.4x throughput improvement and 1.5x-2.4x HBM bandwidth reduction compared to packing-only methods on Llama3.1-8B and Llama3.1-70B models. With the co-design of packing, prefetching, and BEOL memories, our approach alleviates HBM constraints and enables efficient long-context LLM inference.

cs.AR↗

arXiv2025

3DGauCIM: Accelerating Static/Dynamic 3D Gaussian Splatting via Digital CIM for High Frame Rate Real-Time Edge Rendering

Dynamic 3D Gaussian splatting (3DGS) extends static 3DGS to render dynamic scenes, enabling AR/VR applications with moving objects. However, implementing dynamic 3DGS on edge devices faces challenges: (1) Loading all Gaussian parameters from DRAM for frustum culling incurs high energy costs. (2) Increased parameters for dynamic scenes elevate sorting latency and energy consumption. (3) Limited on-chip buffer capacity with higher parameters reduces buffer reuse, causing frequent DRAM access. (4) Dynamic 3DGS operations are not readily compatible with digital compute-in-memory (DCIM). These challenges hinder real-time performance and power efficiency on edge devices, leading to reduced battery life or requiring bulky batteries. To tackle these challenges, we propose algorithm-hardware co-design techniques. At the algorithmic level, we introduce three optimizations: (1) DRAM-access reduction frustum culling to lower DRAM access overhead, (2) Adaptive tile grouping to enhance on-chip buffer reuse, and (3) Adaptive interval initialization Bucket-Bitonic sort to reduce sorting latency. At the hardware level, we present a DCIM-friendly computation flow that is evaluated using the measured data from a 16nm DCIM prototype chip. Our experimental results on Large-Scale Real-World Static/Dynamic Datasets demonstrate the ability to achieve high frame rate real-time rendering exceeding 200 frame per second (FPS) with minimal power consumption, merely 0.28 W for static Large-Scale Real-World scenes and 0.63 W for dynamic Large-Scale Real-World scenes. This work successfully addresses the significant challenges of implementing static/dynamic 3DGS technology on resource-constrained edge devices.

cs.AR↗

arXiv2025

A3D-MoE: Acceleration of Large Language Models with Mixture of Experts via 3D Heterogeneous Integration

Conventional large language models (LLMs) are equipped with dozens of GB to TB of model parameters, making inference highly energy-intensive and costly as all the weights need to be loaded to onboard processing elements during computation. Recently, the Mixture-of-Experts (MoE) architecture has emerged as an efficient alternative, promising efficient inference with less activated weights per token. Nevertheless, fine-grained MoE-based LLMs face several challenges: 1) Variable workloads during runtime create arbitrary GEMV-GEMM ratios that reduce hardware utilization, 2) Traditional MoE-based scheduling for LLM serving cannot fuse attention operations with MoE operations, leading to increased latency and decreased hardware utilization, and 3) Despite being more efficient than conventional LLMs, loading experts from DRAM still consumes significant energy and requires substantial DRAM bandwidth. Addressing these challenges, we propose: 1) A3D-MoE, a 3D Heterogeneous Integration system that employs state-of-the-art vertical integration technology to significantly enhance memory bandwidth while reducing Network-on-Chip (NoC) overhead and energy consumption. 2) A 3D-Adaptive GEMV-GEMM-ratio systolic array with V-Cache efficient data reuse and a novel unified 3D dataflow to solve the problem of reduced hardware utilization caused by arbitrary GEMV-GEMM ratios from different workloads, 3) A Hardware resource-aware operation fusion scheduler that fuses attention operations with MoE operations to enhance hardware performance, and 4) MoE Score-Aware HBM access reduction with even-odd expert placement that reduces DRAM access and bandwidth requirements. Our evaluation results indicate that A3D-MoE delivers significant performance enhancements, reducing latency by a factor of 1.8x to 2x and energy consumption by 2x to 4x, while improving throughput by 1.44x to 1.8x compared to the state-of-the-art.

cs.AR↗

arXiv2025

SLIM: A Heterogeneous Accelerator for Edge Inference of Sparse Large Language Model via Adaptive Thresholding

Large language models (LLMs) have demonstrated exceptional proficiency in understanding and generating human language, but efficient inference on resource-constrained embedded devices remains challenging due to large model sizes and memory-intensive operations in feedforward network (FFN) and multi-head attention (MHA) layers. While existing accelerators offload LLM inference to expensive heterogeneous computing systems, they fail to exploit the significant sparsity inherent in LLM operations, leaving hardware resources underutilized. We propose SLIM, an algorithm-hardware co-design optimized for sparse LLM serving on edge devices. SLIM exploits LLM sparsity through an adaptive thresholding algorithm that enables runtime-configurable sparsity with negligible accuracy loss, fetching only activated neurons to dramatically reduce data movement. Our heterogeneous hardware architecture strategically combines near-storage processing (NSP) and processing-in-memory (PIM): FFN weights are stored in high-density 3D NAND and computed using NSP units, while memory-intensive MHA operations are processed in PIM modules. This design significantly reduces memory footprint, data movement, and energy consumption. Our comprehensive evaluation demonstrates SLIM's effectiveness, achieving 13-18x throughput improvements over SSD-GPU systems and 9-10x better energy efficiency over DRAM-GPU systems while maintaining low latency, making cost-effective LLM deployment viable for edge computing environments.

cs.AR↗

arXiv2025

CMOS+X: Stacking Persistent Embedded Memories based on Oxide Transistors upon GPGPU Platforms

In contemporary general-purpose graphics processing units (GPGPUs), the continued increase in raw arithmetic throughput is constrained by the capabilities of the register file (single-cycle) and last-level cache (high bandwidth), which require the delivery of operands at a cadence demanded by wide single-instruction multiple-data (SIMD) lanes. Enhancing the capacity, density, or bandwidth of these memories can unlock substantial performance gains; however, the recent stagnation of SRAM bit-cell scaling leads to inequivalent losses in compute density. To address the challenges posed by SRAM's scaling and leakage power consumption, this paper explores the potential CMOS+X integration of amorphous oxide semiconductor (AOS) transistors in capacitive, persistent memory topologies (e.g., 1T1C eDRAM, 2T0C/3T0C Gain Cell) as alternative cells in multi-ported and high-bandwidth banked GPGPU memories. A detailed study of the density and energy tradeoffs of back-end-of-line (BEOL) integrated memories utilizing monolithic 3D (M3D)-integrated multiplexed arrays is conducted, while accounting for the macro-level limitations of integrating AOS candidate structures proposed by the device community (an aspect often overlooked in prior work). By exploiting the short lifetime of register operands, we propose a multi-ported AOS gain-cell capable of delivering 3x the read ports in ~76% of the footprint of SRAM with over 70% lower standby power, enabling enhancements to compute capacity, such as larger warp sizes or processor counts. Benchmarks run on a validated NVIDIA Ampere-class GPU model, using a modified version of Accel-Sim, demonstrate improvements of up to 5.2x the performance per watt and an average 8% higher geometric mean instruction per cycle (IPC) on various compute- and memory-bound tasks.

cs.ET↗

arXiv2025

An In-Situ Spatial-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage

Neuromorphic vision sensors require efficient real-time pattern recognition, yet conventional architectures struggle with energy and latency constraints. Here, we present a novel in-situ spatiotemporal sequence detector that leverages vertical NAND storage to achieve massively parallel pattern detection. By encoding each cell with two single-transistor-based multi-level cell (MLC) memory elements, such as ferroelectric field-effect transistors (FeFETs), and mapping a pixel's temporal sequence onto consecutive word lines (WLs), we enable direct temporal pattern detection within NAND strings. Each NAND string serves as a dedicated reference for a single pixel, while different blocks store patterns for distinct pixels, allowing large-scale spatial-temporal pattern recognition via simple direct bit-line (BL) sensing, a well-established operation in vertical NAND storage. We experimentally validate our approach at both the cell and array levels, demonstrating that vertical NAND-based detector achieves more than six orders of magnitude improvement in energy efficiency and more than three orders of magnitude reduction in latency compared to conventional CPU-based methods. These findings establish vertical NAND storage as a scalable and energy-efficient solution for next-generation neuromorphic vision processing.

cs.ET↗

arXiv2025

Optimization and Benchmarking of Monolithically Stackable Gain Cell Memory for Last-Level Cache

The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low operation energy. To date, high-density (HD) SRAM has been the conventional device of choice; however, with the slowing of transistor scaling, as reflected in the industry's almost identical HD SRAM cell size from 5 nm to 3 nm, alternative solutions such as 3D stacking with advanced packaging like hybrid bonding are pursued (as demonstrated in AMD's V-cache). Escalating data demands necessitate ultra-large on-chip caches to decrease costly off-chip memory movement, pushing the exploration of device technology toward monolithic 3D (M3D) integration where transistors can be stacked in the back-end-of-line (BEOL) at the interconnect level. M3D integration requires fabrication techniques compatible with a low thermal budget (<400 degC). Among promising BEOL device candidates are amorphous oxide semiconductor (AOS) transistors, particularly desirable for their ultra-low leakage ( seconds) when used in a gain-cell configuration. This paper examines device, circuit, and system-level tradeoffs when optimizing BEOL-compatible AOS-based 2-transistor gain cell (2T-GC) for LLC. A cache early-exploration tool, NS-Cache, is developed to model caches in advanced 7 and 3 nm nodes and is integrated with the Gem5 simulator to systematically benchmark the impact of the newfound density/performance when compared to HD-SRAM, MRAM, and 1T1C eDRAM alternatives for LLC.

cs.ET↗

arXiv2025

Monolithic 3D FPGAs Utilizing Back-End-of-Line Configuration Memories

This work presents a novel monolithic 3D (M3D) FPGA architecture that leverages stackable back-end-of-line (BEOL) transistors to implement configuration memory and pass gates, significantly improving area, latency, and power efficiency. By integrating n-type (W-doped In_2O_3) and p-type (SnO) amorphous oxide semiconductor (AOS) transistors in the BEOL, Si SRAM configuration bits are substituted with a less leaky equivalent that can be programmed at logic-compatible voltages. BEOL-compatible AOS transistors are currently under extensive research and development in the device community, with investment by leading foundries, from which reported data is used to develop robust physics-based models in TCAD that enable circuit design. The use of AOS pass gates reduces the overhead of reconfigurable circuits by mapping FPGA switch block (SB) and connection block (CB) matrices above configurable logic blocks (CLBs), thereby increasing the proximity of logic elements and reducing latency. By interfacing with the latest Verilog-to-Routing (VTR) suite, an AOS-based M3D FPGA design implemented in 7 nm technology is demonstrated with 3.4x lower area-time squared product (AT^2), 27% lower critical path latency, and 26% lower reconfigurable routing block power on benchmarks including hyperdimensional computing and large language models (LLMs).

cs.ET↗