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Shiguo Liu

Publications and source records attributed to Shiguo Liu.

2 recordsLinked to original sources

High-efficiency integrated laser on erbium-doped lithium niobate-on-insulator

Lithium niobate on insulator (LNOI) combines the outstanding optical properties of lithium niobate (LN) with strong optical confinement, scalable fabrication and high-density integration, making it a leading platform for integrated photonic chips. Recent advances in LNOI photonics have mainly centred on passive and electro-optic components, including couplers, waveguides, microcavities and modulators, whereas efficient on-chip laser sources remain insufficiently developed, limiting the realization of fully integrated LN photonic systems. Because LN is an indirect-bandgap material, lasing on LNOI generally relies on photoluminescence from rare-earth-ion doping, yet the conversion efficiency of doped LNOI lasers has remained low. By comparing LNOI microcavity lasers with fibre lasers and waveguide amplifiers, we identify the limited number of rare-earth ions participating in stimulated emission as a key factor responsible for inefficient pump utilization. Here we demonstrate an integrated Er-doped LNOI laser that combines high-quality, highly Er-doped LN, a large-diameter wide-microring resonator, a low-loss waveguide amplifier and bidirectional pumping. This architecture enables a slope efficiency of 16.91% at 1562 nm, exceeding 10% on the LNOI platform for the first time. Our results provide a route towards high-efficiency LNOI lasers for fully integrated photonic systems.

physics.optics

Highly efficient on-chip erbium-ytterbium co-doped lithium niobate waveguide amplifiers

The ability to amplify optical signals is of paramount importance in photonic integrated circuits (PICs). Recently, lithium niobate on insulator (LNOI) has attracted increasing interests as an emerging PIC platform. However, the shortage of active devices on LNOI platform limits the development of optical amplification. Here, we firstly report an efficient waveguide amplifier based on erbium and ytterbium co-doped LNOI by using electron beam lithography and inductively coupled plasma reactive ion etching process. We have demonstrated that the net internal gain in the communication band is 15.70 dB/cm under the pumping of 974 nm continuous laser. Benefiting from the efficient pumping facilitated by energy transfer between ytterbium and erbium ions, signal amplification can be achieved at a low pump power of 0.1 mW. It is currently the most efficient waveguide amplifier under unidirectional pumping reported on the LNOI platform, with an internal conversion efficiency of 10%. This work proposes a new and efficient active device for LNOI integrated optical systems, which may become an important fundamental component of future lithium niobate photonic integration platforms.

physics.optics