arXiv subjects

Shengqiang Xu

Publications and source records attributed to Shengqiang Xu.

3 recordsLinked to original sources

arXiv2026

HeteroGenManip: Generalizable Manipulation For Heterogeneous Object Interactions

Generalizable manipulation involving cross-type object interactions is a critical yet challenging capability in robotics. To reliably accomplish such tasks, robots must address two fundamental challenges: "where to manipulate" (contact point localization) and "how to manipulate" (subsequent interaction trajectory planning). Existing foundation-model-based approaches often adopt end-to-end learning that obscures the distinction between these stages, exacerbating error accumulation in long-horizon tasks. Furthermore, they typically rely on a single uniform model, which fails to capture the diverse, category-specific features required for heterogeneous objects. To overcome these limitations, we propose HeteroGenManip, a task-conditioned, two-stage framework designed to decouple initial grasp from complex interaction execution. First, Foundation-Correspondence-Guided Grasp module leverages structural priors to align the initial contact state, thereby significantly reducing the pose uncertainty of grasping. Subsequently, Multi-Foundation-Model Diffusion Policy (MFMDP) routes objects to category-specialized foundation models, integrating fine-grained geometric information with highly-variable part features via a dual-stream cross-attention mechanism. Experimental evaluations demonstrate that HeteroGenManip achieves robust intra-category shape and pose generalization. The framework achieves an average 31% performance improvement in simulation tasks with broad type setting, alongside a 36.7% gain across four real-world tasks with different interaction types.

cs.RO↗

arXiv2026

From Seeing to Simulating: Generative High-Fidelity Simulation with Digital Cousins for Generalizable Robot Learning and Evaluation

Learning robust robot policies in real-world environments requires diverse data augmentation, yet scaling real-world data collection is costly due to the need for acquiring physical assets and reconfiguring environments. Therefore, augmenting real-world scenes into simulation has become a practical augmentation for efficient learning and evaluation. We present a generative framework that establishes a generative real-to-sim mapping from real-world panoramas to high-fidelity simulation scenes, and further synthesize diverse cousin scenes via semantic and geometric editing. Combined with high-quality physics engines and realistic assets, the generated scenes support interactive manipulation tasks. Additionally, we incorporate multi-room stitching to construct consistent large-scale environments for long-horizon navigation across complex layouts. Experiments demonstrate a strong sim-to-real correlation validating our platform's fidelity, and show that extensively scaling up data generation leads to significantly better generalization to unseen scene and object variations, demonstrating the effectiveness of Digital Cousins for generalizable robot learning and evaluation.

cs.RO↗

arXiv2025

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting

Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of heterojunction devices, in particular utilizing extreme lattice mismatches. We demonstrate the manipulation of device behaviors and performance enhancement achievable through a lattice-mismatched, single-crystalline GaAs/GeSn-multi-quantum well (MQW)/Ge n-i-p heterojunction by employing advanced semiconductor grafting technology. With engineered band alignment and optical field distribution, the grafted GaAs/GeSn-MQW/Ge n-i-p photodiode achieved outstanding performance: a record-low dark current density of 1.22E10^-7 A/cm^2, an extended spectral response from ~0.5 to 2 um, and improved photoresponsivity of RVIS of 0.85 A/W and RNIR of 0.40 A/W at 520 and 1570 nm, respectively. The dark current density is at least 5 orders of magnitude lower than state-of-the-art GeSn photodiodes. The photoresponsivity demonstrates an approximately sevenfold enhancement in the VIS range and a threefold improvement in the NIR range compared to the reference epitaxial photodiode. This work presents a unique strategy for constructing lattice-mismatched semiconductor heterojunction devices. More importantly, the implications transcend the current GaAs/GeSn-MQW/Ge example, offering potential applications in other material systems and freeing device design from the stringent lattice-matching constraints of conventional heteroepitaxy.

cond-mat.mtrl-sci↗