Shashu Tomar | arXiv Science

arXiv2026

Nonlinear Photocurrent Spectroscopy and Polarization-Tunable Shift Current in the Layered Semiconductor $\mathrm{CuScP_2S_6}$

The class of layered metal thiophosphates and selenophosphates are emerging as promising candidates for non-linear photonic and optoelectronic applications. Here we report one-photon absorption (1PA) and two-photon absorption (2PA) induced photocurrents in $CuScP_2S_6$, establishing it as an optoelectronically-active non-centrosymmetric semiconductor. Spectrally-resolved 1PA and 2PA photoresponsivity paired with photoluminescence and differential reflectance measurements reveal a band gap of 2.35 eV, several higher energy interband transitions, and sub-band gap multiphoton excitonic transitions. Vertical graphite/$CuScP_2S_6$/graphite devices exhibit zero-bias photocurrent with a polarity controlled by both photon energy and optical polarization orientation within the ab-plane. This sign-dependence combined with a characteristic power-law transition from linear to square-root scaling are consistent with a shift-current origin to this bulk photovoltaic effect (BPVE). These findings establish $CuScP_2S_6$ as a multi-functional platform for polarization-sensitive non-linear optoelectronics.

cond-mat.mtrl-sci↗

arXiv2026

Cryogenically Enhanced Laser-Induced Amorphous Phase Transitions in Crystalline Silicon

Amorphization of silicon is crucial to applications in photonics, microelectronics and solar cell technologies. Ultrafast lasers have been used to generate amorphous silicon from crystalline silicon using rapid nonthermal melting and solidification in room temperature. As material temperature can affect cooling rates significantly, adding temperature control in ultrafast laser modification of silicon may allow a new degree of freedom in ultrafast laser modification. In this work, we investigate the role of cryogenic temperature in governing ultrafast damage pathways via single-shot femtosecond laser irradiation of silicon from room temperature down to 24K at 1030nm. Across this temperature range, we observe a pronounced enhancement of amorphization at lower temperatures, revealed through optical microscopy, Raman spectroscopy, and Kelvin probe force microscopy (KPFM). Raman analysis identifies this ring as an amorphous surface layer, while complementary AFM and SEM imaging show temperature-dependent changes in surface morphology, including localized melt redistribution and refrozen material. To elucidate the physical origins of this behavior, we implement a carrier dependent two-temperature model (nTTM). The simulations reproduce the experimentally observed trends and indicate that reduced phonon population, modified absorption pathways, and altered lattice relaxation dynamics at cryogenic temperatures collectively promote amorphous freezing over recrystallization. This study represents the first detailed examination of silicon under ultrafast irradiation below the liquid-nitrogen regime and reveals temperature-governed mechanisms relevant for advanced silicon microstructuring.

cond-mat.mtrl-sci↗