arXiv subjects

Shaowei He

Publications and source records attributed to Shaowei He.

3 recordsLinked to original sources

arXiv2026

Unveiling Nanoscale Surface Damage Dynamics in Swift Heavy Ion Irradiated Gallium Nitride

This work systematically unveils the nanoscale surface damage dynamics in gallium nitride by investigating the atomistic mechanisms of hillock formation. The results identify two distinct hillock morphologies dependent on electronic energy loss (Se) values. Bell-shaped hillocks form under 18.2 keV/nm Kr irradiation, whereas crater-rim hillocks with central holes emerge under 40.2 keV/nm Ta irradiation. Microstructural analysis reveals that Ga-rich hillocks are accompanied by the generation of metastable zincblende nanodomains. These nanodomains preferentially aggregate around the periphery or sidewalls of the hillocks and exhibit a high spatial correlation with screw dislocations. Further temperature-dependent studies indicate that elevated temperatures significantly enlarge the overall dimensions of the hillock structures without altering their fundamental morphologies. Notably, under Ta irradiation above 1200 K, the high temperatures drastically reduce the viscosity and surface tension of liquid gallium. This enhanced fluidity of the transient molten phase promotes the formation of penetrating nanochannels.

cond-mat.mtrl-sci↗

arXiv2026

Atomistic Mechanisms of Temperature-Dependent Ion Track Formation in Gallium Nitride under Swift Heavy Ion Irradiation

The radiation tolerance of gallium nitride under extreme conditions is critical for its deployment in next-generation electronic and optoelectronic devices, yet the microscopic mechanisms governing swift heavy ion induced damage at elevated temperatures remain poorly understood. Therefore, this study employs a coupled approach including the two-temperature model and molecular dynamics simulations to resolve the entire processes of ion track generation induced by swift heavy ions irradiation across a wide temperature range. A temperature-driven morphological transition of ion tracks, evolving from discontinuous segments to continuous tracks composed of isolated nanobubbles, and ultimately to fully continuous channels is observed. Under lower electronic stopping loss of 430 MeV Kr irradiation, increasing temperature significantly enhances track visibility, enlarges track radii and promotes nanobubble formation. For higher electronic stopping conditions of 1171 MeV Ta irradiation, continuous ion tracks consisting of discontinuous nanobubbles (~1.5 nm radius) emerge already at 300 K, followed by a thermally activated transition into continuous channels with further radial expansion. At the atomic scale, SHI irradiation induces decomposition of wurtzite GaN into Ga clusters and N2 molecules along the ion trajectory, with Ga-rich regions and recrystallized wurtzite phases accumulating near bubble interfaces, while N2 preferentially segregates within bubble cores. Additionally, zincblende nanodomains nucleate around ion tracks and exhibit strong spatial correlation with radiation-induced dislocation networks, particularly screw dislocations, providing potential pathways for leakage current and increased susceptibility to single-event burnout.

cond-mat.mtrl-sci↗

arXiv2026

Anisotropic Core-Shell Swift Heavy Ion Tracks in beta-Ga2O3

Swift heavy ion (SHI) irradiation generates nanoscale ion tracks through intense electronic excitation, yet the microscopic mechanisms governing their morphology and phase stability in low symmetry oxides remain poorly understood. Here, a multiscale atomistic simulation framework is used to investigate the formation and recovery of SHI-induced tracks in monoclinic $\beta$-Ga2O3 over a wide range of electronic energy losses (Se) and crystallographic orientations. A sequence of distinct structural responses is identified with increasing Se: (i) complete lattice recovery at low Se; (ii) recrystallization into a metastable $\gamma$-Ga2O3 phase at intermediate Se; and (iii) the formation of core-shell ion tracks at high Se, consisting of an amorphous core surrounded by a recrystallized $\gamma$-phase shell. Despite the essentially isotropic initial energy deposition, the final ion-track morphology exhibits pronounced crystallographic anisotropy, governed by orientation-dependent recovery dynamics. The superior recrystallization along the [010] direction is attributed to its exceptionally high elastic stiffness. Notably, SHI irradiation perpendicular to the (100) plane induces a more severe structural response at low Se ($\le$ 10 keV/nm), however, at higher Se, it yields a smaller residual ion track compared to the other orientations. The simulated ion-track sizes show excellent quantitative agreement with the available experimental measurements over a wide range of Se values. These findings establish a unified atomic-scale picture of core-shell track formation and anisotropic recovery in $\beta$-Ga2O3.

cond-mat.mtrl-sci↗