arXiv subjects

Shao-Heng Yang

Publications and source records attributed to Shao-Heng Yang.

3 recordsLinked to original sources

arXiv2026

Process-Technology Co-optimization for 2D-FETs

We present the first experimental machine learning (ML)-enabled Process-Technology Co-Optimization (PTCO) framework for optimizing 2D transition metal dichalcogenide (TMD) FET fabrication directly from statistically meaningful experimental data rather than pure simulation data. We first introduce a transition voltage metric, VTrans, to quantify the gate voltage required for off-to-on switching and reveal its direct correlation with subthreshold swing (SS), highlighting an overlooked switching characteristic that governs both off-state and on-state performance. By integrating automated metric extraction, multi-objective recipe ranking, and predictive modeling, our framework uncovers hidden process-performance correlations and predicts the performance of unexplored fabrication recipes from limited experimental data. Experimental validation shows close agreement with ML predictions, thus demonstrating the framework's ability to efficiently guide gate stack optimization through iterative experimental feedback.

cond-mat.mes-hall↗

arXiv2026

Seed Layer Engineering for Effective Charge Transfer Doping of MoS$_2$ Transistors

Integrating two-dimensional semiconductors such as MoS$_2$ with dielectric materials remains a central challenge for their use in future logic technologies. While seed layers are typically introduced to promote dielectric nucleation and adhesion, we show that they also critically govern charge-transfer doping and, in turn, transistor performance. Back-gated monolayer MoS$_2$ transistors passivated on their top-surface with a Ta-seed/HfO$_x$ dielectric stack were fabricated and characterized electrically and physically using Raman, photoluminescence, and X-ray photoelectron spectroscopies. Threshold voltage and on-current varied strongly with Ta-seed thickness and deposition conditions, and these changes correlated with signatures observed across all spectroscopic probes. The results reveal that the seed layer both introduces disorder into the MoS$_2$ channel and modifies the interfacial charge environment controlling charge transfer between HfO$_x$ and MoS$_2$. Optical spectroscopy shows that on-current tracks seed-induced disorder, whereas X-ray photoelectron spectroscopy indicates that threshold voltage correlates with shifts in the local electrostatic environment associated with interfacial charge transfer. Better performance was obtained with ultrathin 0.2 nm Ta seed layers deposited under oxygen-poor conditions, which limit deposition-induced damage while facilitating charge transfer. These findings identify seed-layer engineering as a key strategy for controlling disorder and interfacial doping in MoS$_2$ devices and establish multimodal spectroscopy as a practical during-fabrication approach for process development and monitoring.

cond-mat.mtrl-sci↗

arXiv2026

Scaling Two-Dimensional Semiconductor Nanoribbons for High-Performance Electronics

As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of nanometers to meet density targets. Monolayer transition metal dichalcogenides (TMDs), with their atomically thin bodies, are promising channel materials for these architectures, yet most TMD-based FETs remain limited to micrometer-scale widths. Here, we show that channel width scaling of monolayer MoS2 nanoribbon transistors not only preserves but also enhances device performance. Reducing the channel width from hundreds of nanometers to $\sim$30--40 nm increases the median on-current density by $\sim$42% and reduces the median subthreshold swing by $\sim$16%, with a champion device reaching 995 $\mu$A $\mu$m$^{-1}$ at a drain-to-source voltage of 1 V and an overdrive voltage of 2.5 V. We attribute these improvements to three mechanisms: minimal edge-induced disorder, enhanced gate electrostatics at ribbon edges, and more efficient side-contact injection, together reducing contact resistance from $\sim$860 $\Omega$ $\mu$m to $\sim$270 $\Omega$ $\mu$m. Extending the platform to n-type WS2 and p-type WSe2 FETs, we achieve WSe2 p-FET on-currents of 357 $\mu$A $\mu$m$^{-1}$. These findings suggest that monolayer TMD nanoribbon FETs are promising candidates for future ultra-scaled electronics.

cond-mat.mtrl-sci↗