arXiv subjects

Sean Smith

Publications and source records attributed to Sean Smith.

5 recordsLinked to original sources

arXiv2026

Machine Learning-Based Battery State-of-health Prediction for Unmanned Aerial Vehicles Predictive Maintenance

Battery state-of-health (SoH) prediction aims to estimate the remaining capacity by modeling battery degradation through its life cycle. Machine learning (ML)-based SoH models can accurately predict the battery remaining capacity based on voltage, current, and temperature. Battery SoH prediction for unmanned aerial vehicles (UAVs) is a crucial yet overlooked domain with data scarcity and high variability. Accurate battery SoH information contributes to efficient predictive maintenance, enhancing UAV profitability and flight safety. However, UAVs are compatible with a variety of batteries and the available data for each type of battery are scarce. Furthermore, the available input features from UAV batteries are limited to the built-in sensors because of the lightweight requirements. This research aims to develop an ML pipeline for UAV battery SoH prediction while mitigating data scarcity using knowledge transfer. 342 and 289 flight experiments have been conducted to collect operational data from lithium polymer batteries of 2200 mAh and 1100 mAh, respectively. Voltage, current, and throttle are selected as the input features of the ML model according to the existing literature and sensor availability. The remaining capacity is measured at every 10th experiment to label the dataset. To address data scarcity, the time-series data acquired from the experiments are transformed into images to utilize the image feature extraction capability of a pretrained ResNet-50. Finally, accurate SoH prediction models were obtained using transfer learning between two battery types.

cs.CE↗

arXiv2025

Stream Function-Based Navigation for Complex Quadcopter Obstacle Avoidance

This article presents a novel stream function-based navigational control system for obstacle avoidance, where obstacles are represented as two-dimensional (2D) rigid surfaces in inviscid, incompressible flows. The approach leverages the vortex panel method (VPM) and incorporates safety margins to control the stream function and flow properties around virtual surfaces, enabling navigation in complex, partially observed environments using real-time sensing. To address the limitations of the VPM in managing relative distance and avoiding rapidly accelerating obstacles at close proximity, the system integrates a model predictive controller (MPC) based on higher-order control barrier functions (HOCBF). This integration incorporates VPM trajectory generation, state estimation, and constraint handling into a receding-horizon optimization problem. The 2D rigid surfaces are enclosed using minimum bounding ellipses (MBEs), while an adaptive Kalman filter (AKF) captures and predicts obstacle dynamics, propagating these estimates into the MPC-HOCBF for rapid avoidance maneuvers. Evaluation is conducted using a PX4-powered Clover drone Gazebo simulator and real-time experiments involving a COEX Clover quadcopter equipped with a 360 degree LiDAR sensor.

cs.RO↗

arXiv2024

Sequential Monte Carlo for Cut-Bayesian Posterior Computation

We propose a sequential Monte Carlo (SMC) method to efficiently and accurately compute cut-Bayesian posterior quantities of interest, variations of standard Bayesian approaches constructed primarily to account for model misspecification. We prove finite sample concentration bounds for estimators derived from the proposed method and apply these results to a realistic setting where a computer model is misspecified. Two theoretically justified variations are presented for making the sequential Monte Carlo estimator more computationally efficient, based on linear tempering and finding suitable permutations of initial parameter draws. We then illustrate the SMC method for inference in a modular chemical reactor example that includes submodels for reaction kinetics, turbulence, mass transfer, and diffusion. The samples obtained are commensurate with a direct-sampling approach that consists of running multiple Markov chains, with computational efficiency gains using the SMC method. Overall, the SMC method presented yields a novel, rigorous approach to computing with cut-Bayesian posterior distributions.

stat.CO↗

arXiv2019

Electronic Structure Shift of Deep Nanoscale Silicon by SiO$_2$- vs. Si$_3$N$_4$-Embedding as Alternative to Impurity Doping

Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on a new fundamental effect in theory and experiment, namely the electronic structure of dns-Si experiencing energy offsets of ca. 1 eV as a function of SiO$_2$- vs. Si$_3$N$_4$-embedding with a few monolayers (MLs). An interface charge transfer (ICT) from dns-Si specific to the anion type of the dielectric is at the core of this effect and arguably nested in quantum-chemical properties of oxygen (O) and nitrogen (N) vs. Si. We investigate the size up to which this energy offset defines the electronic structure of dns-Si by density functional theory (DFT), considering interface orientation, embedding layer thickness, and approximants featuring two Si nanocrystals (NCs); one embedded in SiO$_2$ and the other in Si$_3$N$_4$. Working with synchrotron ultraviolet photoelectron spectroscopy (UPS), we use SiO$_2$- vs. Si$_3$N$_4$-embedded Si nanowells (NWells) to obtain their energy of the top valence band states. These results confirm our theoretical findings and gauge an analytic model for projecting maximum dns-Si sizes for NCs, nanowires (NWires) and NWells where the energy offset reaches full scale, yielding to a clear preference for electrons or holes as majority carriers in dns-Si. Our findings can replace impurity doping for n/p-type dns-Si as used in ultra-low power electronics and ULSI, eliminating dopant-related issues such as inelastic carrier scattering, thermal ionization, clustering, out-diffusion and defect generation. As far as majority carrier preference is concerned, the elimination of those issues effectively shifts the lower size limit of Si-based ULSI devices to the crystalization limit of Si of ca. 1.5 nm and enables them to work also under cryogenic conditions.

cond-mat.mes-hall↗

arXiv2016

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime measurements.

cond-mat.mtrl-sci↗