arXiv subjects

Sean Doan

Publications and source records attributed to Sean Doan.

4 recordsLinked to original sources

arXiv2026

Electronic and Photonic Integration of Single Quantum Emitters in 2D Materials

Single-photon sources that are bright, pure, and interference-ready are essential for quantum communication and photonic quantum information processing, but many solid-state platforms still rely on bulky optical excitation, careful alignment, and post-selection to achieve useful linewidth, stability, and brightness. Scalable quantum photonics instead requires turnkey quantum-light engines that can be triggered on demand, stabilized against environmental noise, and efficiently interfaced with fibers or photonic circuits. This review surveys recent progress in electronic and photonic integration of single quantum emitters in two-dimensional materials, focusing on localized excitonic emitters in transition metal dichalcogenides and defect-based color centers in hexagonal boron nitride. On the electronic side, we discuss electrical injection, fast modulation, electrostatic stabilization, and Stark tunability as routes to suppress blinking, spectral wandering, and charge-noise-induced broadening. On the photonic side, we review waveguide and resonator platforms that funnel emission into well-defined optical modes and, in some cases, enhance radiative rates through the Purcell effect. We connect these integration strategies to key source metrics, including single-photon purity, brightness, spectral stability, and photon indistinguishability. We conclude that the next stage of progress will depend on co-designed electronic and photonic architectures that jointly optimize on-demand operation, stabilization, tunability, and packaging-compatible optical interfacing.

quant-ph↗

arXiv2025

High-Performance Near-Infrared Quantum Emission from Color Centers in hBN

Color centers hosted in hexagonal boron nitride have emerged as a highly promising platform for single-photon emission and spin-photon technologies relevant to quantum communication and quantum networking. As a wide-bandgap van der Waals material, hBN can host optically active quantum defects across a broad spectral range. Here, we demonstrate a simple and scalable oxygen-plasma process that reproducibly creates single quantum emitters in hBN with blinking-free zero-phonon lines spanning the near-infrared from 700 up to 971 nm. These emitters combine MHz-level brightness, single-photon purity up to 99.9\%, and ultranarrow cryogenic linewidths down to 2.7~GHz under quasi-resonant excitation, placing them in a particularly attractive regime for quantum photonics. Photostability measurements further reveal resistance to photobleaching, sub-nm spectral stability over long timescales, and near-shot-noise-limited intensity fluctuations. Analysis of the phonon sidebands shows weak vibronic coupling and ZPL-dominated emission, with Debye--Waller factors approaching 50\%. Control experiments together with EDS elemental mapping support oxygen incorporation as a necessary ingredient in activating the NIR emitter population, while first-principles calculations identify O$_N$V$_N$ and O$_N$V$_N$H as the leading defect candidates. These results establish a high-performance NIR quantum-emitter platform in hBN for free-space quantum networking and future integrated quantum-photonic architectures.

quant-ph↗

arXiv2025

Microscopic Theory of Squeezed Light in Quantum Dot Systems

We present a cavity-QED theory for generating squeezed light from semiconductor quantum dots (QDs) integrated in microcavities. We formulate equations of motion for an inhomogeneously broadened QD ensemble that is incoherently pumped and simultaneously driven by a coherent seed field, solve for steady states, and compute the output-field quadrature variances. The analysis identifies operating conditions that yield amplitude-quadrature squeezing, with photon-number fluctuations reduced below the coherent-state limit and squeezing levels as large as 5 dB attainable with presently accessible QD and cavity parameters using only ~ 1 uW pump power. We further show that quantum correlations originating from four-wave mixing play a dual role: they both shape the gain spectrum and generate squeezing. These correlations constitute the quantum counterpart of the mean-field (semiclassical) mechanisms responsible for self-mode-locking in QD lasers and the ultra-narrow lasing linewidths achieved under self-injection locking.

quant-ph↗

arXiv2024

Characterization of Chromium Impurities in $\beta$-Ga$_2$O$_3$

Chromium is a common transition-metal impurity that is easily incorporated during crystal growth. It is perhaps best known for giving rise to the 694.3 nm (1.786 eV) emission in Cr-doped Al$_2$O$_3$, exploited in ruby lasers. Chromium has also been found in monoclinic gallium oxide, a wide-bandgap semiconductor being pursued for power electronics. In this work, we thoroughly characterize the behavior of Cr in Ga$_2$O$_3$ through theoretical and experimental techniques. $\beta$-Ga$_2$O$_3$ samples are grown with the floating zone method and show evidence of a sharp photoluminescence signal, reminiscent of ruby. We calculate the energetics of formation of Cr from first principles, demonstrating that Cr preferentially incorporates as a neutral impurity on the octahedral site. Cr possesses a quartet ground-state spin and has an internal transition with a zero-phonon line near 1.8 eV. By comparing the calculated and experimentally measured luminescence lineshape function, we elucidate the role of coupling to phonons and uncover features beyond the Franck-Condon approximation. The combination of strong emission with a small Huang-Rhys factor of 0.05 and a technologically relevant host material render Cr in Ga$_2$O$_3$ attractive as a quantum defect.

cond-mat.mtrl-sci↗