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Samit K. Ray

Publications and source records attributed to Samit K. Ray.

9 recordsLinked to original sources

Energy-efficient, Reconfigurable Optoelectronic Artificial Synapses Based on MoWS$_2$ Alloy for Pattern Recognition and Color Image Filtering Applications

Two-dimensional transition-metal dichalcogenide alloys are potential candidates for advanced optoelectronic and neuromorphic applications due to their strong light-matter interactions and controllable defect properties. However, large-area growth of such alloys remains challenging, while the correlation between their physical and neuromorphic properties remains largely unclear. In this work, we present an innovative microcavity chemical vapor deposition (CVD) reactor pathway to grow uniform, and large-area MoWS$_2$ mono- and few-layer alloy films for demonstrating optoelectronic synaptic functionalities. Driven by growth-induced intrinsic sulfur vacancies, as confirmed by XPS, KPFM, and STEM measurements, our optoelectronic synaptic device (OSD) successfully emulates essential biological synaptic features, such as excitatory postsynaptic currents (EPSC), paired-pulse facilitation (PPF~170%), and stimulus-dependent short- and long-term plasticities (STP & LTP). With picojoule-order energy consumption per synaptic event and nanoampere-order dark current, the device enables low-power neuromorphic learning, including emulation of Pavlovian associative learning. Furthermore, the experimentally measured conductance weight-update characteristics enabled an artificial neural network (ANN) simulation to achieve 92.43% recognition accuracy on the MNIST handwritten digit dataset. Finally, we demonstrate advanced neuromorphic visual processing by executing color image filtering based on the device's wavelength-selective photoresponse characteristics. This simple, yet multifunctional device architecture provides a promising path toward energy-efficient, spectral-selective neuromorphic vision applications.

cond-mat.mtrl-sci

Atomically-Thin Tsumoite (BiTe) based All-Photonic-Isolator, Information Converter, and Logic-Gate

Two-dimensional tsumoite (BiTe), a polymorph of Bi2Te3, has emerged as a promising candidate for nonlinear photonic devices owing to its strong spin-orbit coupling, tunable bandgap, and high carrier mobility characteristics. This work presents a thorough examination of the third-order nonlinear optical response of BiTe dispersions using spatial self-phase modulation (SSPM) spectroscopy. The nonlinear refractive index (n2) and third-order nonlinear susceptibility are quantitatively derived from the diffraction ring patterns, demonstrating third-order nonlinear susceptibility values, similar to or surpassing those of advanced 2D materials. The temporal development and distortion of the SSPM rings are examined using the wind-chime model, and thermal factors influencing the SSPM pattern are analyzed. First-principles electronic band structure studies reveal that the elevated nonlinear susceptibility arises from band dispersion. Direct correlation between carrier transport and third-order nonlinear susceptibility is established. Utilizing these qualities, all photonic devices, including a photonic isolator based on a 2D BiTe-2D hBN heterostructure, are depicted to show asymmetric propagation. A photonic information converter and a logic gate are designed using the cross-phase modulation technique. These findings establish 2D BiTe nanostructure as a formidable nonlinear optical platform for advanced photonic signal processing and integrated photonic applications.

physics.optics

Plasmonic Mediated Atomically Engineered 2D Aluminium Quasicrystals for Dopamine Biosensing

Dopamine levels are linked to neurological illnesses like Parkinson's and Alzheimer's. Thus, reliable and sensitive detection of dopamine is crucial for early diagnosis and surveillance of neurodegenerative diseases. Non-noble-metal-based nanomaterials are ideal for light-mediated sensing of organic molecules. Among these, 2D quasicrystal structures consisting of five elements, namely Al70Co10Fe5Ni10Cu5, provide active sites due to their high surface-to-volume ratio, making them excellent for organic chemical sensing. Here, we propose a simple, label-free, spatial self-phase-modulation (SSPM)-based sensing method in liquid form. SSPM-based time evolution of the diffraction pattern for varied mixing levels of a 1100 ppb dopamine solution shows a shift in the active 2D Al QC solution. The 1100 ppb solution shows a distinct value, indicating a change in the nonlinear refractive index. Time-evolution analysis is used to calculate sensitivities to changes in the nonlinear refractive index and time constant. The SPR-activated 2D Al QC nanostructure is used to demonstrate dopamine sensing and to perform qualitative and quantitative evaluations. The SSPM-based sensing has been further compared with other optical-based sensing methods such as Raman spectroscopy, UV-Vis spectroscopy, and FTIR spectroscopy. The experimental observations are also explained using DFT-based simulations. The current SSPM method can be used for rapid, large-scale medical diagnostics.

cond-mat.mtrl-sci

All Photonic Isolator using Atomically Thin (2D) Bismuth Telluride (Bi2Te3)

This study demonstrates that two-dimensional (2D) Bi2Te3 exhibits strong light-matter interaction, enabling a broadband Kerr nonlinear optical response. This characteristic is advantageous for nonreciprocal light propagation in passive photonic isolators. Using Spatial Self-Phase Modulation (SSPM) spectroscopy, self-induced diffraction patterns in the far field were observed at excitation wavelengths of 650 nm, 532 nm, and 405 nm to calculate the nonlinear refractive index (n2) and the third-order nonlinear optical susceptibility (chi^(3)) of the synthesized 2D Bi2Te3. The results show that 2D Bi2Te3 possesses a significantly higher nonlinear refractive index than graphene. The laser-induced hole coherence effect is responsible for the large magnitude of the third-order nonlinear susceptibility. Surface engineering techniques were also employed to enhance the response speed of the photonic system. Complementary ab initio simulations were performed to gain further insight into the observed nonlinear behavior. Leveraging the strong Kerr nonlinearity of 2D Bi2Te3, a nonlinear photonic isolator that breaks time-reversal symmetry and enables unidirectional light propagation was demonstrated. This work establishes Bi2Te3 as a novel 2D material for nonlinear photonics, expanding its potential applications in detectors, modulators, and optical switches.

physics.optics

Exceptionally High Nonlinear Optical Response in Two-dimensional Type II Dirac Semimetal Nickel di-Telluride (NiTe2)

Nickel ditelluride (NiTe2) is a newly identified Type-II Dirac semimetal, showing novel characteristics in electronic transport and optical experiments. In this study, we explored the nonlinear optical properties of two-dimensional NiTe2 using experimental and computational techniques (density functional theory-based approach). Few layered two-dimensional NiTe2 (2D-NiTe2) are synthesized using liquid phase exfoliation (LPE), which is characterized using X-ray diffraction technique, transmission electron, and atomic force microscopy. The nonlinear refractive index and third-order nonlinear susceptibility of the prepared 2D-NiTe2 are determined from the self-induced diffraction pattern generated using different wavelengths ( 405, 532, and 650 nm) in the far field. In addition, the diffraction pattern generated by spatial self-phase modulation (SSPM) is further verified by varying concentration (2D-NiTe2 in the IPA solvent), wavelength (of incoming laser beams), and cuvette width (active path length). The high value of third-order nonlinear susceptibility (in order of 10-9 e.s.u.) determined using SSPM in the 2D-NiTe2 can be attributed to the laser-induced hole coherence effect. Lastly, utilizing the reverse saturable absorption property of 2D-hBN, asymmetric light propagation is also demonstrated in the 2D-NiTe2/2D-hBN heterostructure.

cond-mat.mes-hall

Anomalous Lasing Behavior in a Nonlinear Plasmonic Random Laser

An unprecedented double-threshold lasing behavior has been observed in a plasmonic random laser composed of Au nanoislands decorated on vertically standing ZnO nanorods, infiltrated with dye-doped polymer matrix. The strong coupling of random laser modes to plasmonic nanocavities results in a dominant absorption of the random laser emission, leading to the first unusual lasing threshold. At higher pump fluences, the nonlinear optical behavior of the Au nanoislands induces a second lasing threshold. Various statistical tools have been employed to analyze the intensity fluctuations of the random laser modes, validating this unique lasing behavior.

physics.optics

Charge transfer mediated giant photo-amplification in air-stable $\alpha$-CsPbI$_3$ nanocrystals decorated 2D-WS$_2$ photo-FET with asymmetric contacts

Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively higher dark current and require a large operating gate voltage of the device. Here, we report novel air-stable cesium lead iodide/tungsten di-sulfide (CsPbI$_3$/WS$_2$) mixed dimensional heterostructure based photo-field-effect-transistors (photo-FETs) with asymmetric metal electrodes (Cr/WS$_2$/Au), exhibiting extremely low dark current (~10-12 A) with a responsivity of ~102 A/W at zero gate bias. The Schottky barrier (WS$_2$/Au interface) induced rectification characteristics in the channel accompanied by the excellent photogating effect from solution-processed $\alpha$-phase CsPbI$_3$ NCs sensitizers, resulting in gate-tunable broadband photodetection with a very high responsivity (~104 A/W) and excellent sensitivity (~106). Most interestingly, the device shows superior performance even under high humidity (50-65%) conditions owing to the formation of cubic $\alpha$-phase CsPbI$_3$ nanocrystals with a relatively smaller lattice constant (a = 6.2315 {\AA}) and filling of surface vacancies (Pb2+ centres) with the sulfur atoms from WS$_2$ layer, thus protecting it from environmental degradation. These results emphasise a novel strategy for developing mixed dimensional hybrid heterostructure based phototransistors for futuristic integrated nano-optoelectronic systems.

cond-mat.mtrl-sci

Substrate Dependent Synergistic Many-Body Effects in Atomically Thin Two Dimensional WS$_2$

Mott transition has been realized in atomically thin monolayer (ML) of two dimensional semiconductors (WS$_2$) via optically excited carriers above a critical carrier density through many body interactions. The above nonlinear optical transition occurs when excited electron hole pairs in ML WS2 continuum heavily interact with each other followed by transformation into a collective electron hole plasma phase (EHP), by losing their identity as individual quasiparticles. This is manifested by the alluring red-shift-blue-shift crossover (RBC) phenomena of the excitonic peaks in the emission spectra, resulting from the synergistic attraction-repulsion processes at the Mott-transition point. A systematic investigation of many-body effects is reported on ML WS$_2$, while considering the modulated dielectric screening of three different substrates, viz., silicon dioxide, sapphire, and gold. Substrate doping effects on ML WS$_2$ are discussed using the Raman fingerprints and PL spectral weight, which are further corroborated using theoretical DFT calculations. Further the substrate dependent excitonic Bohr radius of ML WS$_2$ is extracted via modelling the emission energy shift with Lennard-Jones potential. The variation of Mott point as well as excitonic Bohr radius is explained via substrate induced dielectric screening effect for both the dielectric substrates, which is however absent in ML WS$_2$ on Au. Our study therefore reveals diverse many-body ramifications in 2D semiconductors and offers decisive outlooks on selecting the impeccable substrate materials for innovative device engineering.

cond-mat.mtrl-sci

Facile and time-resolved chemical growth of nanoporous CaxCoO2 thin films for flexible and thermoelectric applications

CaxCoO2 thin films can be promising for widespread flexible thermoelectric applications in a wide temperature range from room-temperature self-powered wearable applications (by harvesting power from body heat) to energy harvesting from hot surfaces (e.g., hot pipes) if a cost-effective and facile growth technique is developed. Here, we demonstrate a time resolved, facile and ligand-free soft chemical method for the growth of nanoporous Ca0.35CoO2 thin films on sapphire and mica substrates from a water-based precursor ink, composed of in-situ prepared Ca2+-DMF and Co2+-DMF complexes. Mica serves as flexible substrate as well as sacrificial layer for film transfer. The grown films are oriented and can sustain bending stress until a bending radius of 15 mm. Despite the presence of nanopores, the power factor of Ca0.35CoO2 film is found to be as high as 0.50 x 10-4 Wm-1K-2 near room temperature. The present technique, being simple and fast to be potentially suitable for cost-effective industrial upscaling.

cond-mat.mtrl-sci