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Sam Stranks

Publications and source records attributed to Sam Stranks.

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Deriving a comprehensive dataset of optical constants for metal halide perovskites

Accurate optical constants are essential for modelling light propagation, absorption, and ultimately photovoltaic performance in state of the art perovskite solar cells and is especially important for multiple junction or tandem cells. However, available datasets for metal halide perovskites remain sparse, inconsistent in quality, and often suffer from unphysical sub bandgap extinction caused by surface roughness and limitations of conventional ellipsometry fits. Here, we present a comprehensive library of complex refractive indices (n,k) for a technologically relevant set of FA based lead perovskites, spanning bromide compositions from 0 to 100 percent, and mixed Pb Sn perovskites with Sn fractions from 0 to 60 %. Using state of the art fabrication protocols that yield high quality films, we combine variable angle spectroscopic ellipsometry measurements with highly sensitive sub bandgap probes, including photothermal deflection spectroscopy for neat lead based perovskites and Fourier transform photocurrent spectroscopy for Pb Sn alloys, to reconstruct fully zeroed dielectric functions across and below the band edge. The measured data are then stitched and recalculated via a Kramers Kronig consistent framework, ensuring physically accurate behaviour across the full spectral range. Finally, we introduce a transformation based interpolation scheme that preserves spectral shape and feature alignment, enabling reliable determination of (n,k) for any intermediate composition or band gap. This complete dataset and interpolation protocol provide a standardized foundation for optical modelling of perovskite and tandem solar cells, addressing longstanding data gaps and supporting accurate simulations of next generation photovoltaic architectures.

cond-mat.mtrl-sci

Critical assessment of contact resistance and mobility in tin perovskite semiconductors

Recent reports highlight the potential of tin-based perovskite semiconductors for high-performance p-type field-effect transistors (FETs) with mobilities exceeding 20 cm2V-1s-1. However, these high mobilities--often obtained via two-probe (2P) methods on devices with small channel length-to-width ratios (L/W < 0.5) operating in the saturation regime at high drain-source currents--raise concerns about overestimation due to contact resistance and non-ideal FET characteristics. Here, we performed gated four-point probe (4PP) FET measurements on Hall bar devices (L/W = 6) of Cs0.15FA0.85SnI3, obtaining a consistent mobility of 3.3 cm2V-1s-1. Upon comparing these with gated 2P measurements of narrow-channel FETs (L/W = 0.1) on the same chip, we resolved the contact resistance (R_C). The 2P linear mobility is underestimated due to voltage drops across R_C, while the 2P saturation mobility is overestimated because of high (dR_C)/(dV_G) near the threshold. Contact resistance effects become more pronounced at lower temperatures. Contact-corrected four-point-probe (4PP) mobilities are independent of bias conditions and are observed to flatten at temperatures lower than 180 K. Future reports of perovskite FET mobilities should include gated 4PP measurements and use devices with larger L/W ratios to minimize nonidealities arising from contact resistance effects.

physics.app-ph