arXiv subjects

Sai Mu

Publications and source records attributed to Sai Mu.

At least 19 recordsLinked to original sources

arXiv2026

Magnetic quantum defects in a uniaxial antiferromagnetic insulator

Point defects have been successfully utilized in various quantum technologies, serving as quantum qubits for quantum computation, single-photon emitters for quantum communication, and nanoscale sensors for quantum metrology. However, their further development faces key challenges, particularly in discovering and exploring suitable defect-host systems that meet the necessary criteria for quantum applications. Here, using polarization-resolved Raman spectroscopy and terahertz absorption spectroscopy, we discover three distinct chromium-vacancy-induced excitations in the uniaxial antiferromagnetic insulator, Cr$_2$O$_3$. These vacancy-induced excitations have an energy scale of a few tens of millielectronvolts and are twofold degenerate, and the lowest one at 64 $cm^{-1}$ is sharp and sensitive to the external magnetic field along the easy-axis direction, particularly close to the spin-flop regime around 6T, where the mode softens from 64 to 27$cm^{-1}$. Based on the defect supercell first-principles calculations, we interpret the mode at 64 $cm^{-1}$ as a local magnetic excitation of the local moment within the chromium vacancy state. Our results establish that the magnetic defect states in Cr$_2$O$_3$ have potential for quantum applications.

cond-mat.mtrl-sci↗

arXiv2026

Halide donors in monoclinic- and corundum-phase Ga$_2$O$_3$ and Al$_2$O$_3$

We present a systematic first-principles investigation of halide impurities (F and Cl) in Ga$_2$O$_3$ and Al$_2$O$_3$, considering both monoclinic and corundum phases. Our study of the structural properties, formation energies, and charge-state transition levels establishes the relative stability of different atomic configurations and charge states. We find that F and Cl on oxygen sites act as shallow donors in Ga$_2$O$_3$ in both the monoclinic and corundum phases. However, their behavior differs substantially as the band gap increases with greater Al compositions. Fluorine is prone to $DX$-center formation with increased Al composition, leading to self-compensation at 38% Al concentration in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ and 70% Al concentration in corundum (Al$_x$Ga$_{1-x}$)$_2$O$_3$. Chlorine is more resistant to $DX$-center formation: in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$, Cl$_\mathrm{O}$ on the lowest-energy oxygen site shows an onset of $DX$ behavior at 50% alloy composition, while in corundum (Al$_x$Ga$_{1-x}$)$_2$O$_3$ this onset for Cl$_\mathrm{O}$ occurs only at Al concentrations as high as 84%. We also study F and Cl interstitials, finding that they act as compensating centers but also exhibit migration barriers that are low enough for them to be removed by post-growth annealing. Surprisingly, in both monoclinic and corundum Al$_2$O$_3$, Cl$_\mathrm{O}$ exhibits a relatively shallow transition level located at $\sim$0.48 eV below the conduction-band minimum, much shallower than F$_\mathrm{O}$ and other donor candidates. These remarkable results identify Cl as an unusually promising donor candidate in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys and even pure Al$_2$O$_3$, although high formation energies and compensation will render observation of true $n$-type conductivity in Al$_2$O$_3$ difficult.

cond-mat.mtrl-sci↗

arXiv2026

Revealing Charge Transfer in Defect-Engineered 4H$_\mathrm{b}$-TaS$_2$

We present a comprehensive first-principles investigation of defects in 4$H_b$-TaS$_2$. In this layered transition metal dichalcogenide, charge transfer between alternating Mott-insulating 1T and metallic 1H layers gives rise to exotic quantum phases such as the Kondo effect and topological superconductivity. Motivated by recent defect manipulation in 4$H_b$-TaS$_2$ via STM, we address their microscopic nature and impact on interlayer charge transfer. To this end, we systematically analyze over 90 defects using large-scale density functional theory (DFT) calculations. Our extensive dataset, compiled from STM simulations, defect formation energies, work functions, and charge transfer, establishes a foundational resource for future theoretical and experimental studies on defect engineering in 4$H_b$-TaS$_2$.

cond-mat.mtrl-sci↗

arXiv2026

Identification of the I$_{10}$ Donor in ZnO as a Sn--Li Complex with Large Hyperfine Interaction

Donor impurities in wide direct band gap semiconductors provide a promising platform for spin--photon quantum technologies by combining a donor spin qubit with optically addressable transitions. In ZnO, the shallow donor with the largest reported binding energy has long been associated with the I$_{10}$ bound exciton line, but its microscopic origin has remained unresolved. Here we demonstrate the controlled formation and identification of this donor as a Sn--Li complex through a combination of ion implantation, annealing, optical spectroscopy, and first-principles calculations. Resonant two-laser coherent population trapping measurements reveal an electron--$^{119}$Sn hyperfine interaction of $392 \pm 15$\,MHz, establishing a coupled electron--spin--1/2, nuclear--spin--1/2 system with one of the largest hyperfine couplings reported for shallow donors in semiconductors. Density functional theory calculations show that a nearest-neighbor Sn$_{\mathrm{Zn}}$--Li$_{\mathrm{Zn}}$ complex has favorable formation energetics, donor character with the electron localized on Sn, and an extrapolated hyperfine interaction consistent with experiment. The large donor binding energy and excited-state structure indicate enhanced thermal robustness of the optical transition relative to conventional group--III donors, while the strong hyperfine interaction enables fast electron--nuclear spin control and prospects for direct nuclear--spin--photon interfaces. We further observe efficient optically induced nuclear spin polarization, highlighting a path toward nuclear spin initialization. More broadly, our results reveal how a donor--acceptor complex can access previously unexplored regimes of shallow donor physics, extending the design space of quantum defects beyond isolated substitutional dopants.

quant-ph↗

arXiv2025

Nanoscale Modulation of Flat Bands via Controllable Charge-Density-Waves Defects in 4Hb-TaS2

Electron correlation is a main driver of exotic quantum phases and their interplay. The 4Hb-TaS2 system, possessing intrinsic heterostructure of 1T- and 1H-TaS2 monolayers, offers a unique opportunity to control electron correlation by distorting the atomic lattice or tuning interlayer coupling. Here, we investigated intrinsically deformed charge-density-waves (CDW) in the 1T layer of 4Hb-TaS2 to elucidate and control their effects on flat bands using scanning tunneling microscopy and spectroscopy (STM/S) combined with first-principles calculations. We identified two types of CDW defects: Type 1 has structural distortion and locally suppressed flat bands, while Type 2 features an increased flat band filling factor of intact CDW structure. Density functional theory calculations indicate that a sulfur vacancy in the 1T layer distorts the CDW structure and gives rise to a Type 1, whereas a sulfur vacancy in the 1H layer reduces the interlayer charge transfer and lead to a Type 2. Furthermore, we demonstrated creating and erasing individual CDW defects via STM manipulation. Our findings provide a pathway to not only tune flat bands but also selectively manipulate the interaction between CDW, the atomic lattice, and interlayer coupling in strongly correlated systems with atomic precision.

cond-mat.str-el↗

arXiv2025

Intrinsic defects and 4d/5d transition metal defects in Cr$_2$O$_3$: pathways to enhance the N\'eel temperature

First-principles calculations are employed to explore avenues to increase the N\'eel temperature ($T_{\mathrm{N}}$) of the magnetoelectric antiferromagnet Cr$_2$O$_3$ through doping. Employing the hybrid functional method, we calculate the formation energy of intrinsic defects and transition metal dopants (Mo, W, Nb, Ta, Zr, and Hf) to assess their likelihood of formation. Intrinsic defect calculations indicate that Cr interstitials and oxygen vacancies dominate under Cr-rich conditions, whereas Cr vacancies prevail under O-rich conditions. Notably, under Cr-rich conditions, the Fermi level can be pinned slightly above mid-gap due to the formation of Cr interstitials and oxygen vacancies. To assess the influence of dopant on $T_{\mathrm{N}}$ of Cr$_2$O$_3$, we calculate the enhancement of the exchange energy for the spin on the dopant site or on adjacent Cr site using the supercell method. Our study identifies isovalent Mo and W substitution on Cr site as the most promising candidates to increase N\'eel temperature due to the impurity-mediated enhanced exchange interaction for half-filled bands. Formation energy calculations indicate that Mo and W substitution on Cr are easier to form under Cr-rich conditions and a Fermi level near or slightly above the midgap renders a desirable neutral Mo and W defect. This is assisted by the formation of intrinsic Cr interstitial and O vacancy under Cr-rich conditions. These findings offer a route to utilize defects for higher $T_{\mathrm{N}}$ and enhanced performance of Cr$_2$O$_3$ in magnetoelectric devices and furnish invaluable insights for directing subsequent experimental endeavors.

cond-mat.mtrl-sci↗

arXiv2025

Tuning of altermagnetism by strain

For all collinear altermagnets, we sort out piezomagnetic free-energy invariants allowed in the nonrelativistic limit and relativistic piezomagnetic invariants bilinear in the N\'eel vector $\mathbf{L}$ and magnetization $\mathbf{M}$, which include strain-induced Dzyaloshinskii-Moriya interaction. The symmetry-allowed responses are fully determined by the nonrelativistic spin Laue group. In the nonrelativistic limit, two distinct mechanisms are discussed: the band-filling mechanism, which exists in metals and is illustrated using the simple two-dimensional Lieb lattice model, and the temperature-dependent exchange-driven mechanism, which is illustrated using first-principles calculations for transition-metal fluorides. The leading second-order nonrelativistic term in the strain-induced magnetization is also obtained for CrSb. Piezomagnetism due to the strain-induced Dzyaloshinskii-Moriya interaction is calculated from first principles for transition-metal fluorides, MnTe, and CrSb. Finally, we discuss triplet superconducting correlations supported by altermagnets and protected by inversion rather than time-reversal symmetry. We apply the nonrelativistic classification of Cooper pairs to describe the interplay between strain and superconductivity in the two-dimensional Lieb lattice and in bulk rutile structures. We show that triplet superconductivity is, on average, unitary in an unstrained altermagnet, but becomes non-unitary under piezomagnetically active strain.

cond-mat.mtrl-sci↗

arXiv2024

Characterization of Chromium Impurities in $\beta$-Ga$_2$O$_3$

Chromium is a common transition-metal impurity that is easily incorporated during crystal growth. It is perhaps best known for giving rise to the 694.3 nm (1.786 eV) emission in Cr-doped Al$_2$O$_3$, exploited in ruby lasers. Chromium has also been found in monoclinic gallium oxide, a wide-bandgap semiconductor being pursued for power electronics. In this work, we thoroughly characterize the behavior of Cr in Ga$_2$O$_3$ through theoretical and experimental techniques. $\beta$-Ga$_2$O$_3$ samples are grown with the floating zone method and show evidence of a sharp photoluminescence signal, reminiscent of ruby. We calculate the energetics of formation of Cr from first principles, demonstrating that Cr preferentially incorporates as a neutral impurity on the octahedral site. Cr possesses a quartet ground-state spin and has an internal transition with a zero-phonon line near 1.8 eV. By comparing the calculated and experimentally measured luminescence lineshape function, we elucidate the role of coupling to phonons and uncover features beyond the Franck-Condon approximation. The combination of strong emission with a small Huang-Rhys factor of 0.05 and a technologically relevant host material render Cr in Ga$_2$O$_3$ attractive as a quantum defect.

cond-mat.mtrl-sci↗

arXiv2024

Heterostructure Engineering for Wurtzite LaN

Wurtzite LaN (wz-LaN) is a semiconducting nitride with favorable piezoelectric and ferroelectric properties, making it promising for applications in electronics. We use first-principles density functional theory with a hybrid functional to investigate several features that are key for its use in heterostructures. First, for the purposes of growing wz-LaN on a substrate or designing a heterostructure, we show that it can be lattice-matched with a number of cubic materials along their [111] axes. We also evaluate the bound charge at such interfaces, taking into account both the polarization discontinuity and the piezoelectric polarization due to pseudomorphic strain. Second, we investigate band alignments and assess the results for interfaces with zincblende-, rocksalt-, and perovskite-structure compounds, and with chemically similar wurtzite and rocksalt nitrides. Our results provide guidance for the development of electronic devices based on wz-LaN.

cond-mat.mtrl-sci↗

arXiv2024

Absence of Phonon Softening across a Charge Density Wave Transition due to Quantum Fluctuations

Kagome metals have emerged as a frontier in condensed matter physics due to their potential to host exotic quantum states. Among these, CsV3Sb5 has attracted significant attention for the unusual coexistence of charge density wave (CDW) order and superconductivity, presenting an ideal system for exploring novel electronic and phononic phenomena. The nature of CDW formation in CsV3Sb5 has sparked considerable debate. Previous studies have suggested that the underlying mechanism driving the CDW transition in CsV3Sb5 is distinct from conventional ones, such as electron-phonon coupling and Fermi surface nesting. In this study, we examine the origin of the CDW state via ab initio finite-temperature simulations of the lattice dynamics associated with CDW structures in CsV3Sb5. Through a comparative study of CsV3Sb5 and 2H-NbSe2, we demonstrate that the experimental absence of phonon softening in CsV3Sb5 and the presence of a weakly first order transition can be attributed to quantum zero-point motion of the lattice, which leads to smearing of the CDW landscape and effectively stabilizes the pristine structure even below the CDW transition temperature. We argue that this surprising behavior could cause coexistence of pristine and CDW structures across the transition and lead to a weak first-order transition. We further discuss experimental implications and use the simulation to interpret coherent phonon spectroscopy results in single crystalline CsV3Sb5. These findings not only refine our fundamental understanding of CDW transitions, but also highlight the surprising role of quantum effects in influencing macroscopic properties of relatively heavy-element materials like CsV3Sb5. Our results provide crucial insights into the formation mechanism of CDW materials that exhibit little to no phonon softening, including cuprates, aiding in the understanding of the CDW phase in quantum materials.

cond-mat.mtrl-sci↗

arXiv2024

Towards higher electro-optic response in AlScN

Novel materials with large electro-optic (EO) coefficients are essential for developing ultra-compact broadband modulators and enabling effective quantum transduction. Compared to lithium niobate, the most widely used nonlinear optical material, wurtzite AlScN offers advantages in nano-photonic devices due to its compatibility with integrated circuits. We perform detailed first-principles calculations to investigate the electro-optic effect in $\mathrm{Al}_{1-x}\mathrm{Sc}_{x}\mathrm{N}$ alloys and superlattices. At elevated Sc concentrations in alloys, the EO coefficients increase; importantly, we find that cation ordering along the $c$ axis leads to enhanced EO response. Strain engineering can be used to further manipulate the EO coefficients of AlScN films. With applied in-plane strains, the piezoelectric contributions to the EO coefficients increase dramatically, even exceeding 251 pm/V. We also explore the possibility of EO enhancement through superlattice engineering, finding that nonpolar $a$-plane $\mathrm{(AlN)}_m/\mathrm{(ScN)}_n$ superlattices increase EO coefficients beyond 40 pm/V. Our findings provide design principles to enhance the electro-optic effect through alloy engineering and heterostructure architecture.

cond-mat.mtrl-sci↗

arXiv2024

Large Bandgap Observed on the Surfaces of EuZn2As2 Single Crystals

EuM2As2 (M = Zn, Cd, In, Sn etc.) is an excellent material system for studying topological properties, which can be easily tuned by magnetism involved. Theoretical calculations predict gapped and flat bands in EuZn2As2 but gapless structure in EuCd2As2. In this work, low-temperature (77 K) cleaved EuZn2As2 crystals are studied using scanning tunneling microscopy/spectroscopy (STM/S) and density functional theory (DFT) calculations. Defects-induced local density of states (LDOS) modification with a triangular shape helps identify the surface terminations: Eu versus AsZn surface. While large bandgaps (~1.5 eV at 77 K) are observed on both pristine surfaces, the bandgap width is found to be very sensitive to local heterogeneity, such as defects and step edges, with the tendency of reduction. Combining experimental data with DFT simulations, we conclude that the modified bandgap in the heterogeneous area arises from Zn vacancies and/or substitution by As atoms. Our investigation offers important information for reevaluating the electron topology of the EuM2As2 family.

cond-mat.mtrl-sci↗

arXiv2024

Optical switching of ferro-rotational charge-density wave states

Tailored optical excitations can steer a system along non-equilibrium pathways to metastable states with specific structural or electronic properties. The light-induced hidden state of 1T-TaS$_{2}$, with its strongly enhanced conductivity and exceptionally long lifetime, represents a unique model system for studying the ultrafast switching of correlated electronic states. We use surface-sensitive electron diffraction in combination with a femtosecond optical quench to reveal the coexistence of both charge-density-wave (CDW) 2D chiralities as a structural characteristic of the hidden state, corresponding to coexisting ferro-rotational CDW states. Density functional theory (DFT) simulations of interfaces between opposite CDW 2D chiralities predict a higher-level, fractal-type moir'{e} superstructure with a kagome band structure near the Fermi energy. More broadly, these findings suggest that heterochiral interfaces in CDW systems provide an additional structural degree of freedom, expanding the possibilities for electronic control via twist-angle engineering.

cond-mat.mes-hall↗

arXiv2024

Unveiling the Pockels Coefficient of Ferroelectric Nitride ScAlN

Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics due to their compatibility with mainstream semiconductor processing. ScAlN, in particular, has exhibited remarkable piezoelectric coupling strength ($K^2$) comparable to that of lithium niobate (LN), making it a valuable choice for RF filters in wireless communications. Recently, ScAlN has sparked interest in its use for nanophotonic devices, chiefly due to its large bandgap facilitating operation in blue wavelengths coupled with promises of enhanced nonlinear optical properties such as a large second-order susceptibility ($\chi^{(2)}$). It is still an open question whether ScAlN can outperform oxide ferroelectrics concerning the Pockels effect -- an electro-optic coupling extensively utilized in optical communications devices. In this paper, we present a comprehensive theoretical analysis and experimental demonstration of ScAlN's Pockels effect. Our findings reveal that the electro-optic coupling of ScAlN, despite being weak at low Sc concentration, may be significantly enhanced and exceed LiNbO$_3$ at high levels of Sc doping, which points the direction of continued research efforts to unlock the full potential of ScAlN.

cond-mat.mtrl-sci↗

arXiv2024

Angle-Resolved Magneto-Chiral Anisotropy in a Non-Centrosymmetric Atomic Layer Superlattice

Chirality in solid-state materials has sparked significant interest due to potential applications of topologically-protected chiral states in next-generation information technology. The electrical magneto-chiral effect (eMChE), arising from relativistic spin-orbit interactions, shows great promise for developing chiral materials and devices for electronic integration. Here we demonstrate an angle-resolved eMChE in an A-B-C-C type atomic-layer superlattice lacking time and space inversion symmetry. We observe non-superimposable enantiomers of left-handed and right-handed tilted uniaxial magnetic anisotropy as the sample rotates under static fields, with the tilting angle reaching a striking 45 degree. Magnetic force microscopy and atomistic simulations correlate the tilt to the emergence and evolution of chiral spin textures. The Dzyaloshinskii-Moriya interaction lock effect in competition with Zeeman effect is demonstrated to be responsible for the angle-resolved eMChE. Our findings open up a new horizon for engineering angle-resolved magneto-chiral anisotropy, shedding light on the development of novel angle-resolved sensing or writing techniques in chiral spintronics.

cond-mat.mtrl-sci↗

arXiv2024

Thermoelectric Transport in Weyl Semimetal BaMnSb2: a First-Principles Study

Topological materials are often associated with exceptional thermoelectric properties. Orthorhombic BaMnSb2 is a topological semimetal consisting of alternating layers of Ba, Sb, and MnSb. A recent experiment demonstrates that BaMnSb2 has a low thermal conductivity and modest thermopower, promising as a thermoelectric material. Through first-principles calculations with Coulomb repulsion and spin-orbit coupling included, we studied the electronic structure, phononic structure, and thermoelectric transport properties of BaMnSb2 in depth. We find that BaMnSb2 exhibits a low lattice thermal conductivity, owing to the scattering of the acoustic phonons with low-frequency optical modes. Using the linearized Boltzmann transport theory with a constant relaxation time approximation, the thermopower is further calculated and an intriguing goniopolar transport behavior, which is associated with both n-type and p-type conduction along separate transport directions simultaneously, is observed. We propose that the figure of merit can be enhanced via doping in which electrical conductivity is decreased while the thermopower remains undiminished. BaMnSb2 is a potential platform for elucidating complex band structure effects and topological phenomena, paving the way to explore rich physics in low-dimensional systems.

cond-mat.mtrl-sci↗

arXiv2023

Virtual Node Graph Neural Network for Full Phonon Prediction

The structure-property relationship plays a central role in materials science. Understanding the structure-property relationship in solid-state materials is crucial for structure design with optimized properties. The past few years witnessed remarkable progress in correlating structures with properties in crystalline materials, such as machine learning methods and particularly graph neural networks as a natural representation of crystal structures. However, significant challenges remain, including predicting properties with complex unit cells input and material-dependent, variable-length output. Here we present the virtual node graph neural network to address the challenges. By developing three types of virtual node approaches - the vector, matrix, and momentum-dependent matrix virtual nodes, we achieve direct prediction of $\Gamma$-phonon spectra and full dispersion only using atomic coordinates as input. We validate the phonon bandstructures on various alloy systems, and further build a $\Gamma$-phonon database containing over 146,000 materials in the Materials Project. Our work provides an avenue for rapid and high-quality prediction of phonon spectra and bandstructures in complex materials, and enables materials design with superior phonon properties for energy applications. The virtual node augmentation of graph neural networks also sheds light on designing other functional properties with a new level of flexibility.

cond-mat.dis-nn↗

arXiv2022

Phonons and phase symmetries in bulk $CrCl_3$ from scattering measurements and theory

Phonon-derived behaviors are important indicators of novel phenomena in transition metal trihalides, including spin liquid behavior, two-dimensional magnetism, and spin-lattice coupling. However, phonons and their dependence on spin structure and excitations have not been adequately explored. In this work, we probe and critically examine the vibrational properties of bulk $CrCl_3$ using inelastic neutron scattering and density functional theory. We demonstrate that magnetic and van der Waals interactions are essential to describing the structure and phonons in $CrCl_3$; however, the specific spin configuration is unimportant. This provides context for understanding thermal transport measurements as governed by dynamical spin-lattice couplings. More importantly, we introduce an efficient dynamic method that exploits translational symmetries in large conventional unit cells that generates insights into phonon dispersions, interactions, and measured spectra in terms of quantum phase interference conditions. This work opens new avenues for understanding phonons in layered magnets and more generally in conventional cell geometries of a variety of materials.

cond-mat.mtrl-sci↗