arXiv subjects

S. Fallahi

Publications and source records attributed to S. Fallahi.

13 recordsLinked to original sources

arXiv2023

An rf Quantum Capacitance Parametric Amplifier

We demonstrate a radio-frequency parametric amplifier that exploits the gate-tunable quantum capacitance of an ultra high mobility two dimensional electron gas (2DEG) in a GaAs heterostructure at cryogenic temperatures. The prototype narrowband amplifier exhibits a gain greater than 20 dB up to an input power of - 66 dBm (1 dB compression), and a noise temperature TN of 1.3 K at 370 MHz. In contrast to superconducting amplifiers, the quantum capacitance parametric amplifier (QCPA) is operable at tesla-scale magnetic fields and temperatures ranging from milli kelvin to a few kelvin. These attributes, together with its low power (microwatt) operation when compared to conventional transistor amplifiers, suggest the QCPA may find utility in enabling on-chip integrated readout circuits for semiconductor qubits or in the context of space transceivers and radio astronomy instruments.

cond-mat.mes-hall↗

arXiv2021

Parametric longitudinal coupling between a high-impedance superconducting resonator and a semiconductor quantum dot singlet-triplet spin qubit

Long-distance two-qubit coupling, mediated by a superconducting resonator, is a leading paradigm for performing entangling operations in a quantum computer based on spins in semiconducting materials. Here, we demonstrate a novel, controllable spin-photon coupling based on a longitudinal interaction between a spin qubit and a resonator. We show that coupling a singlet-triplet qubit to a high-impedance superconducting resonator can produce the desired longitudinal coupling when the qubit is driven near the resonator's frequency. We measure the energy splitting of the qubit as a function of the drive amplitude and frequency of a microwave signal applied near the resonator antinode, revealing pronounced effects close to the resonator frequency due to longitudinal coupling. By tuning the amplitude of the drive, we reach a regime with longitudinal coupling exceeding $1$ MHz. This demonstrates a new mechanism for qubit-resonator coupling, and represents a stepping stone towards producing high-fidelity two-qubit gates mediated by a superconducting resonator.

cond-mat.mes-hall↗

arXiv2020

Accurate characterization of tip-induced potential using electron interferometry

Using the tip of a scanning probe microscope as a local electrostatic gate gives access to real space information on electrostatics as well as charge transport at the nanoscale, provided that the tip-induced electrostatic potential is well known. Here, we focus on the accurate characterization of the tip potential, in a regime where the tip locally depletes a two-dimensional electron gas (2DEG) hosted in a semiconductor heterostructure. Scanning the tip in the vicinity of a quantum point contact defined in the 2DEG, we observe Fabry-P\'erot interference fringes at low temperature in maps of the device conductance. We exploit the evolution of these fringes with the tip voltage to measure the change in depletion radius by electron interferometry. We find that a semi-classical finite-element self-consistent model taking into account the conical shape of the tip reaches a faithful correspondence with the experimental data.

cond-mat.mes-hall↗

arXiv2020

Hydrodynamic and ballistic transport over large length scales in GaAs/AlGaAs

We study hydrodynamic and ballistic transport regimes through nonlocal resistance measurements and high-resolution kinetic simulations in a mesoscopic structure on a high-mobility two-dimensional electron system in a GaAs/AlGaAs heterostructure. We evince the existence of collective transport phenomena in both regimes and demonstrate that negative nonlocal resistances and current vortices are not exclusive to only the hydrodynamic regime. The combined experiments and simulations highlight the importance of device design, measurement schemes and one-to-one modeling of experimental devices to demarcate various transport regimes.

cond-mat.mes-hall↗

arXiv2019

Dispersive Gate Sensing the Quantum Capacitance of a Point Contact

The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to the open regime, where many electrons are transported via partially- or fully-transmitting quantum modes. Comparing DGS with conventional transport shows that the technique can resolve the Van Hove singularities of a one-dimensional ballistic system, and also probe aspects of the potential landscape that are not easily accessed with dc transport. Beyond readout, these results suggest that gate-sensing can also be of use in tuning-up qubits or probing the charge configuration of open quantum devices in the regime where electrons are delocalized.

cond-mat.mes-hall↗

arXiv2018

On SOCP/SDP formulation of the extended trust region subproblem

In this paper, we consider the extended trust region subproblem (\eTRS) which is the minimization of an indefinite quadratic function subject to the intersection of unit ball with a single linear inequality constraint. Using a variation of S-Lemma, we derive the necessary and sufficient optimality conditions for \eTRS. Then an SOCP/SDP formulation is introduced for the problem. Finally, several illustrative examples are provided.

math.OC↗

arXiv2017

Possible nematic to smectic phase transition in a two-dimensional electron gas at half-filling

Liquid crystalline phases of matter permeate nature and technology, with examples ranging from cell membranes to liquid-crystal displays. Remarkably, electronic liquid crystal phases can exist in two-dimensional electron systems (2DES) at half Landau level filling in the quantum Hall regime. Theory has predicted the existence of a liquid crystal smectic phase that breaks both rotational and translational symmetries. However, previous experiments in 2DES are most consistent with an anisotropic nematic phase breaking only rotational symmetry. Here we report three transport phenomena at half-filling in ultra-low disorder 2DES: a non-monotonic temperature dependence of the sample resistance, dramatic onset of large time-dependent resistance fluctuations, and a sharp feature in the differential resistance suggestive of depinning. These data suggest that a sequence of symmetry-breaking phase transitions occurs as temperature is lowered: first a transition from an isotropic liquid to a nematic phase and finally to a liquid crystal smectic phase.

cond-mat.mes-hall↗

arXiv2017

A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Here we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics.

cond-mat.mes-hall↗

arXiv2017

Impact of silicon doping on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures

We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon doping density has been varied from $2.4\times 10^{18} cm^{-3}$ (critically doped) to $6.0\times 10^{18} cm^{-3}$ (overdoped). Quantum point contacts were used to detect charge fluctuations. A clear reduction of both short time scale telegraphic noise and long time scale conductance drift with decreased doping density was observed. These measurements indicate that the {\it neutral} doping region plays a significant role in charge noise and conductance drift.

cond-mat.mes-hall↗

arXiv2017

Device Architecture for Coupling Spin Qubits Via an Intermediate Quantum State

We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and unloaded via tunneling to adjacent reservoirs, avoiding charge latch-up common in linear dot arrays. In a step towards realizing two-qubit entanglement based on indirect exchange, the architecture permits precise control over tunnel rates between the singlet-triplet qubits and the intermediate state. We show that by separating qubits by 1 um, the residual capacitive coupling between them is reduced to 7 ueV.

cond-mat.mes-hall↗

arXiv2017

Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment

We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and their readout sensors. Configuring a quantum point contact (QPC) as a localized emitter, we show how these charge pockets are activated by the relaxation of electrons tunneling through a barrier. The presence of charge pockets creates uncontrolled offsets in gate-bias and their thermal activation by on-chip tunnel currents suggests further sources of charge-noise that lead to decoherence in semiconductor qubits.

cond-mat.mes-hall↗

arXiv2016

Notch filtering the nuclear environment of a spin qubit

Electron spins in gate-defined quantum dots provide a promising platform for quantum computation. In particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of semiconducting materials, reliability in fabricating arrays of quantum dots, and accurate qubit operations. However, the effective magnetic noise arising from the hyperfine interaction with uncontrolled nuclear spins in the host lattice constitutes a major source of decoherence. Low frequency nuclear noise, responsible for fast (10 ns) inhomogeneous dephasing, can be removed by echo techniques. High frequency nuclear noise, recently studied via echo revivals, occurs in narrow frequency bands related to differences in Larmor precession of the three isotopes $\mathbf{^{69}Ga}$, $\mathbf{^{71}Ga}$, and $\mathbf{^{75}As}$. Here we show that both low and high frequency nuclear noise can be filtered by appropriate dynamical decoupling sequences, resulting in a substantial enhancement of spin qubit coherence times. Using nuclear notch filtering, we demonstrate a spin coherence time ($\mathbf{T_{2}}$) of 0.87 ms, five orders of magnitude longer than typical exchange gate times, and exceeding the longest coherence times reported to date in Si/SiGe gate-defined quantum dots.

cond-mat.mes-hall↗

arXiv2014

Cryogenic Control Architecture for Large-Scale Quantum Computing

Solid-state qubits have recently advanced to the level that enables them, in-principle, to be scaled-up into fault-tolerant quantum computers. As these physical qubits continue to advance, meeting the challenge of realising a quantum machine will also require the engineering of new classical hardware and control architectures with complexity far beyond the systems used in today's few-qubit experiments. Here, we report a micro-architecture for controlling and reading out qubits during the execution of a quantum algorithm such as an error correcting code. We demonstrate the basic principles of this architecture in a configuration that distributes components of the control system across different temperature stages of a dilution refrigerator, as determined by the available cooling power. The combined setup includes a cryogenic field-programmable gate array (FPGA) controlling a switching matrix at 20 millikelvin which, in turn, manipulates a semiconductor qubit.

cond-mat.mes-hall↗