arXiv subjects

Ryusuke Matsunaga

Publications and source records attributed to Ryusuke Matsunaga.

At least 19 recordsLinked to original sources

arXiv2026

Time- and Frequency-Resolved Observation of Inverse Orbital Hall Effect in Gallium Nitride via Terahertz Polarimetry

Orbitronics has attracted significant attention as a platform for information storage and processing that exploits the orbital angular momentum (OAM) of electrons without the need for spin-orbit coupling. However, experimental evaluation of OAM-charge interconversion remains a challenge and the results are often controversial due to the coexistence of bulk and interfacial contributions and the complexity in sample structures. Here, using circularly polarized light pulses and terahertz (THz) polarimetry, we developed a non-contact method to observe the inverse orbital Hall effect as a bulk response within a single material without employing heterostructure samples. In a semiconductor GaN, we directly captured the OAM-to-charge current conversion of holes in the THz frequency range. By analyzing the sharp frequency dependence of the Hall conductivity, we disentangled the competing microscopic mechanisms and revealed the dominant role of extrinsic contributions to the orbital Hall effect in the dc limit. By contrast, the Hall conductivity at THz frequencies above the impurity scattering rate is attributed to the intrinsic Berry-curvature mechanism,allowing a quantitative comparison with the microscopic theory. Furthermore, the ultrafast dynamics of the inverse orbital Hall signal directly revealed sub-picosecond OAM relaxation of holes, comparable to that of phonon-mediated thermalization. The quantitative argument based on theoretical calculations suggested the existence of an even faster decay channel due to momentum redistribution by acoustic phonons, suggesting a sub-nanometer-scale OAM relaxation length. Our results provide comprehensive and crucial insights into OAM transport and establish an ultrafast, contact-free approach for investigating OAM-to-charge conversion.

cond-mat.mtrl-sci↗

arXiv2026

Modeling of jitter correction methods for asynchronous optical sampling

Timing jitter management is crucial in asynchronous optical sampling (ASOPS) and dual-comb spectroscopy to maintain spectral bandwidth and fidelity. However, a quantitative framework predicting jitter correction efficiency from laser phase noise has been lacking. Here, we present formulation and simulation models that evaluate jitter-suppression dynamics based on phase noise spectra. Our model quantifies the contrast between conventional triggering and software-based jitter correction. It also enables retrieval of a jitter-free spectrum by compensating for jitter-induced power degradation. This work provides a universal design framework for optimizing diverse ASOPS systems by predicting residual jitter prior to system construction.

physics.optics↗

arXiv2026

High-Field Terahertz Spin Resonance in Cr$_2$O$_3$ above the Spin-Flop Transition

We report single-shot terahertz time-domain spectroscopy of Cr$_2$O$_3$ in pulsed magnetic fields up to 30 T. Well above the spin-flop field, in the 20-30 T range, the resonance frequency exhibits a nearly linear field dependence with a slope of ~22 GHz/T, smaller than the 28 GHz/T reported from low-field measurements. This reduction is insensitive to temperature and to a 15° field tilt, suggesting an intrinsic high-field property.

cond-mat.mtrl-sci↗

arXiv2026

Large Photoelasticity in Topological Antiferromagnet Mn$_3$Sn Studied by Coherent Acoustic Phonon

We investigate the role of ultrafast strain on the electronic and optical responses in topological antiferromagnet Mn$_3$Sn thin films using near-infrared femtosecond pump-probe spectroscopy. Coherent acoustic phonons are generated and exhibit remarkably large oscillations in differential transmission exceeding 1% in amplitude. Our quantitative analysis reveals that Mn$_3$Sn possesses an unusually large near-infrared photoelastic coefficient, several times greater than those in conventional materials, indicating a remarkable sensitivity of the electronic states to lattice distortions. This work establishes a quantitative framework for understanding and utilizing strain-induced responses in Mn$_3$Sn, paving a foundation for exploring coupled electron-phonon-magnon dynamics for ultrafast straintronics.

cond-mat.mtrl-sci↗

arXiv2026

Efficiency in a repetitive pulse magnet

A repetitive-pulse magnet is a promising tool when combined with repetitive excitations, such as pulsed lasers. Technically, the repetition and the magnetic field values in a repetitive-pulse magnet are limited by the Joule heating in the coil. Here, we analytically examine the relationship between the coil's dimensions and its efficiency, assuming negligible heating of the coil, to design an optimized high-repetition, high-magnetic-field coil. We calculated the dependence of the maximum magnetic field, energy loss, pulse duration, form factor, impedance, and maximum current on the coil's geometry. We found that the smaller the coil, the more pulses and the more intense the magnetic fields we can obtain under a given condition. We argue that the obtained trend arises from a complex interplay among various parameters.

physics.app-ph↗

arXiv2026

Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry

We investigated the anomalous Hall conductivity induced in silicon by circularly polarized light at room temperature using near-infrared (NIR) pump-terahertz (THz) probe spectroscopy. The time-resolved detection scheme eliminates the large nonlinear current generated by the field-induced circular photogalvanic effect, allowing exclusive observation of a long-lived anomalous Hall conductivity of photocarriers that depends on the helicity of NIR light. The magnitude of this conductivity is comparable to that of GaAs despite silicon's much weaker spin-orbit coupling, and its robustness against NIR photon energy rules out a spin-polarization-based origin, which occurs only in the vicinity of the bandgap. These results suggest the emergence of the inverse orbital Hall effect, paving the way for silicon-based orbitronics.

cond-mat.mes-hall↗

arXiv2026

Calculations in Unified theory of the photovoltaic Hall effect by field- and light-induced Berry curvatures

Photovoltaic Hall effect is an interesting platform of Berry curvature engineering by external fields. Floquet engineering aims at generation of light-induced Berry curvature associated with topological phase transition in solids, which may manifest itself as a light-induced anomalous Hall effect. However, recent studies have pointed out an important role of the bias electric field, which adds a field-induced circular photogalvanic effect to the photovoltaic Hall effect. Except for numerical studies, the two mechanisms have been described by different theoretical frameworks, hindering a coherent understanding. Here, we develop a unified theory of the photovoltaic Hall effect capable of describing both mechanisms on an equal footing. We reveal that the bias electric field alters the interband transition dipole moment, transition energy, and intraband velocity, all contributing to the field-induced circular photogalvanic effect in nonmagnetic materials. The first process can be expressed as a manifestation of the electric field-induced Berry curvature. Shift vector plays an essential role in determining the transition energy shift. We also clearly distinguish the anomalous Hall effect by light-dressed states within the density matrix calculation using the length gauge. Our theory unifies a number of nonlinear optical processes in a physically transparent way and reveals their geometric aspect.

cond-mat.mtrl-sci↗

arXiv2026

Unified theory of the photovoltaic Hall effect by field- and light-induced Berry curvatures

Photovoltaic Hall effect, i.e., generation of a photocurrent perpendicular to the bias electric field, is an interesting platform of Berry curvature engineering by external fields. Floquet engineering aims at generation of light-induced Berry curvature associated with topological phase transition in solids, which may manifest itself as a light-induced anomalous Hall effect. However, recent studies have pointed out a larger contribution by momentum asymmetry of photocarriers, termed a field-induced circular photogalvanic effect. Except for numerical studies, the two mechanisms have been described by different theoretical frameworks, hindering a coherent understanding. Here, we develop a unified theory of the photovoltaic Hall effect capable of describing both mechanisms on an equal footing. We reveal that the bias electric field alters the interband transition dipole moment and transition energy, both contributing to the field-induced circular photogalvanic effect in nonmagnetic materials. These effects are governed by an electric field-induced Berry curvature and the shift vector coupled to bias field, respectively. A resonant enhancement of the transverse photocurrent is found in GaAs owing to the topological character of the valence band. We also clearly distinguish the anomalous Hall effect by light-dressed states within the density matrix calculation using the length gauge. Our theory unifies a number of nonlinear optical processes in a physically transparent way and presents a geometric picture of the third-order nonlinear response under light and bias fields, shedding new light on Berry curvature engineering.

cond-mat.mtrl-sci↗

arXiv2025

Light-induced inverse spin Hall effect and field-induced circular photogalvanic effect in GaAs revealed by two-dimensional terahertz Fourier analysis

The electromotive force transverse to a bias field under irradiation of circularly polarized light, namely the photovoltaic Hall response or light-induced anomalous Hall effect, has attracted considerable attention to investigate the topologically nontrivial states in Floquet engineering and the inverse spin Hall effect of spin-polarized carriers in spintronics. However, taking into account inversion symmetry breaking by the bias field, the circularly polarized light can excite photocarriers with asymmetric momentum distribution, which generates injection current transverse to the bias field. Therefore, the field-induced circular photogalvanic effect (FI-CPGE) should also emerge in the very same experimental configuration for light-induced anomalous Hall effect but has been overlooked in literature. In this work, using terahertz pulses as a bias field for a semiconductor GaAs, we conduct two-dimensional Fourier analysis and demonstrate that FI-CPGE can play a major role in the photovoltaic Hall response. Counterintuitively, FI-CPGE is significantly enhanced when the photocarriers are excited near the bandgap with small density of states and low group velocity, which can be explained by a three-level resonant nonlinear interaction near the band degeneracy point. We also clarified that FI-CPGE would be further largely detected in the contact-type measurement using electrodes because of the absence of a filtering effect inherent to terahertz pulses. This work provides a comprehensive, generalized view of the photovoltaic Hall response in biased materials, paving a new avenue for detecting topological monopoles in momentum space hidden in equilibrium using third-order nonlinear responses.

cond-mat.mtrl-sci↗

arXiv2025

Correction of broadband terahertz electro-optic sampling with GaSe crystals

Gallium selenide (GaSe) is an efficient nonlinear crystal for electro-optic (EO) sampling in the multi-terahertz (THz) frequency range. However, the lattice resonance at several THz frequencies hampers broadband EO sampling, resulting in distorted pulse waveforms. In this work, we experimentally evaluated the frequency-dependent response function in EO sampling, considering the effects of phonons, phase mismatch, and gate pulse waveforms. The phonon effect is described using an effective Faust-Henry coefficient, which was determined to be $-0.21 \pm 0.02$. The corrected field amplitude of multi-THz pulses aligns with additional measurements of average power and a beam diameter. The successful compensation of the frequency characteristics in GaSe will contribute to a more accurate evaluation of multi-THz transients.

physics.optics↗

arXiv2025

Valley polarization dynamics of photoinjected carriers at the band edge in room-temperature silicon studied by terahertz polarimetry

Sixfold-degenerate valleys in Si have attracted considerable attention for valleytronics application. Using optical pump-terahertz (THz) probe spectroscopy, we study the dynamics of valley polarization in bulk Si(001) at room temperature. Linearly polarized pump pulses excite electrons and holes with asymmetric distributions in momentum space, leading to in-plane anisotropic conductivity. By varying the polarization directions of the pump light relative to the in-plane crystalline axes, the valley polarization of electrons and the momentum asymmetry of holes are separately probed through observing the polarization rotation of THz pulses. We demonstrate that the valley relaxation time of electrons near the conduction band minimum exceeds 1.5 ps at room temperature, in good agreement with theoretically calculated intervalley phonon scattering with f process. This work paves the way for Si-based room-temperature valleytronics.

cond-mat.mtrl-sci↗

arXiv2025

Robust asynchronous optical sampling terahertz spectroscopy using commercially available free-running lasers

This study presents asynchronous optical sampling (ASOPS) terahertz spectroscopy using commercially available Ti:Sapphire lasers without stabilizing repetition frequency. Our postprocessing algorithm using the multiplied repetition frequency difference as the calibration signal successfully corrected the jitter, thereby allowing broadband (2.5 THz) spectroscopy with a high spectral resolution (82 MHz). The robustness of the jitter correction based on the free-running laser setup and broadband electric circuits was rigorously examined under varying temperatures, thereby demonstrating reliable long-term operations over 60 h. This study expands the applicability of the ASOPS terahertz time-domain spectroscopy.

physics.optics↗

arXiv2024

Emergence of high-mobility carriers in topological kagome bad metal Mn$_3$Sn by intense photoexcitation

Kagome-lattice materials offer novel playgrounds of exploring topologically nontrivial states of electrons under influence of many-body interactions. A noncollinear kagome antiferromagnet Mn$_3$Sn has attracted particular interest for application in spintronics owing to the large anomalous Hall effect related to the Weyl dispersion near the Fermi energy. In addition, strong electronic correlation suggesting the Kondo physics has also been implied. However, the effect of correlation on the band topology and their interplay remains elusive. Here, we investigate nonequilibrium Hall transport in a photoexcited Mn$_3$Sn using time-resolved terahertz Faraday rotation spectroscopy. In equilibrium, Mn$_3$Sn is a bad metal close to the Mott-Ioffe-Regal limit with low carrier mobility, and thus only the anomalous Hall effect is discerned. By contrast, intense photoexcitation beyond an approximate threshold gives rise to a clear cyclotron resonance, namely the normal Hall effect, indicating the emergence of unusual carriers with 50 times lighter effective mass and 40 times less scattering. The lifetime of high-mobility carriers as long as a few tens of picoseconds and a threshold-like behavior for the pump fluence are hardly explained by contribution of photoexcited hot carriers. Instead, the emergence of unusual carriers may be accounted for by dielectric screening of the on-site Coulomb interaction by high-density delocalized photocarriers. A possible role of electronic correlation in equilibrium transport in Mn$_3$Sn beyond the single-particle picture is discussed.

cond-mat.str-el↗

arXiv2024

Programmable generation of counterrotating bicircular light pulses in the multi-terahertz frequency range

The manipulation of solid states using intense infrared or terahertz light fields is a pivotal area in contemporary ultrafast photonics research. While conventional circular polarization has been well explored, the potential of counterrotating bicircular light remains widely underexplored, despite growing interest in theory. In the mid-infrared or multi-terahertz region, experimental challenges lie in difficulties in stabilizing the relative phase between two-color lights and the lack of available polarization elements. Here, we successfully generated phase-stable counterrotating bicircular light pulses in the 10-40 THz frequency range circumventing the above problems. Employing spectral broadening, polarization pulse shaping with a spatial light modulator, and intra-pulse difference frequency generation leveraging a distinctive angular-momentum selection rule within the nonlinear crystal, we achieved direct conversion from near-infrared pulses into the designed counterrotating bicircular multi-terahertz pulses. Use of the spatial light modulator enables programmable control over the shape, orientation, rotational symmetry, and helicity of the bicircular light field trajectory. This advancement provides a novel pathway for the programmable manipulation of light fields, and marks a significant step toward understanding and harnessing the impact of tailored light fields on matter, particularly in the context of topological semimetals.

physics.optics↗

arXiv2024

Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection

We report the first observation of the spin Hall conductivity spectrum in GaAs at room temperature. Our terahertz polarimetry with a precision of several $μ$rads resolves the Faraday rotation of terahertz pulses arising from the inverse spin Hall effect of optically injected spin-polarized electrons. The obtained spin Hall conductivity spectrum exhibits an excellent quantitative agreement with theory, demonstrating a crossover in the dominant origin from impurity scattering in the DC regime to the intrinsic Berry-curvature mechanism in the terahertz regime. Our spectroscopic technique opens a new pathway to analyze anomalous transports related to spin, valley, or orbital degrees of freedom.

cond-mat.mtrl-sci↗

arXiv2024

Anomalous Hall transport by optically injected isospin degree of freedom in Dirac semimetal thin film

Chirality of massless fermions emergent in condensed matter is a key to understand their characteristic behavior as well as to exploit their functionality. However, chiral nature of massless fermions in Dirac semimetals has remained elusive, due to equivalent occupation of carriers with the opposite chirality in thermal equilibrium. Here, we show that the isospin degree of freedom, which labels the chirality of massless carriers from a crystallographic point of view, can be injected by circularly polarized light. Terahertz Faraday rotation spectroscopy successfully detects the anomalous Hall conductivity by a light-induced isospin polarization in a three-dimensional Dirac semimetal, Cd$_3$As$_2$. Spectral analysis of the Hall conductivity reveals a long scattering time and a long decay time, which are characteristic of the isospin. The long-lived, robust, and reversible character of the isospin promises potential application of Dirac semimetals in future information technology.

cond-mat.mes-hall↗

arXiv2023

Time-domain characterization of electric field vector in multi-terahertz pulses using polarization-modulated electro-optic sampling

We demonstrated characterizing the electric field waveform of multi-terahertz pulses (10-50 THz) as vector quantities in the time domain by applying the polarization modulated electro-optic sampling (POMEOS) method. The problem of an ultrabroadband gate pulse was solved by modifying the fitting function in POMEOS and its validity was confirmed through numerical simulations. High accuracy and precision of approximately 1 mrad with 3 s accumulation were demonstrated. Our method can be applied not only to multi-terahertz polarization measurements for linear response but also to the evaluation of the driving field of intense pulses for nonlinear response or material control.

physics.optics↗

arXiv2023

Disentangling the Competing Mechanisms of Light-Induced Anomalous Hall Conductivity in Three-Dimensional Dirac Semimetal

We experimentally elucidate the origin of the anomalous Hall conductivity in a three-dimensional Dirac semimetal, Cd$_3$As$_2$, driven by circularly polarized light. Using time-resolved terahertz Faraday rotation spectroscopy, we determine the transient Hall conductivity spectrum with special attention to its sign. Our results clearly show the dominance of direct photocurrent generation assisted by the terahertz electric field. The contribution from the Floquet-Weyl nodes is found to be minor when the driving light is in resonance with interband transitions. We develop a generally applicable classification of microscopic mechanisms of light-induced anomalous Hall conductivity.

cond-mat.mtrl-sci↗