arXiv subjects

Ruijuan Tian

Publications and source records attributed to Ruijuan Tian.

5 recordsLinked to original sources

arXiv2026

Multidimensional Light Detection with Symmetry-engineered Heterojunctions

Miniaturised multidimensional light detection, encompassing full-Stokes polarimetry and spectroscopy in ultracompact footprints, is attracting growing interest for its potential to capture a comprehensive set of light properties in portable platforms. Although significant progress has been made in miniaturised schemes for independent polarisation and spectral detection, achieving simultaneous high-dimensional light detection remains an outstanding challenge that limits their development toward full integration. We overcome this limitation by breaking the rotational and inversion symmetries in a symmetry-engineered van der Waals heterojunction to realise an ultracompact multidimensional photodetector. The dual symmetry breaking gives rise to non-trivial quantum geometric and topological features, enabling simultaneous broadband polarisation- and spectrum-resolved light detection, in contrast to previous van der Waals material-based devices, which could detect only one of these modalities. Our device, with an effective area of only 10 micron x 10 micron, reconstructs full-Stokes polarisation with overall root-mean-square errors below 0.05 and resolves spectral peaks separated by 0.4 nm, capabilities not previously achieved in single-pixel detectors. By unifying high-fidelity polarimetry and sub-nanometre spectroscopy in a single electrically tunable junction, our work eliminates the need for cascaded detection architectures and establishes a foundation for multidimensional detector arrays for integrated photonics, quantum information processing, and precision imaging.

physics.optics↗

arXiv2024

Nonlinear photodetector based on InSe p-n homojunction for improving spatial imaging resolution

We demonstrate an efficient nonlinear photodetector (NLPD) with quadratic response based on a few-layer InSe p-n homojunction, which is beneficial from the strong second harmonic generation (SHG) process in InSe and effective harvest of photocarriers actuated by the high-quality homojunction. The NLPD can sense light with photon energy smaller than InSe electronic bandgap because the SHG process in InSe doubles the frequency of incident light, extending InSe photodetection wavelength range to 1750 nm. The InSe p-n homojunction, which is electrostatically doped by two split back gates, presents a rectification ratio exceeding 106 with a dark current down to 2 pA and a high normalized responsivity of 0.534 A/W2 for the telecom-band pulsed light at 1550 nm. The photocurrents of the SHG-assisted photodetection have a quadratic dependence on the optical powers, making the NLPD highly sensitive to light intensity variation with improved spatial resolution. As examples, the NLPD is employed to precisely determine the localization point of a focused laser beam waist and implement spatial imaging with an improved resolution compared with the linear photodetector. These features highlight the potential of the proposed NLPD in developing advanced optical sensing and imaging systems.

physics.optics↗

arXiv2022

High-responsivity MoS$_2$ hot-electron telecom-band photodetector integrated with microring resonator

We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS$_2$ junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS$_2$ Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500 nm-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.

physics.optics↗

arXiv2022

Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal, suffering from high dark currents and low responsivities at high operation speed. Here, we report a van der Waals PN heterojunction photodetector, composed of p-type black phosphorous and n-type molybdenum telluride, integrated on a silicon nitride waveguide. The built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the responsivity. Under a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous, the dark current is lower than 7 nA, which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus photodetectors. An intrinsic responsivity up to 577 mA/W is obtained. Remarkably, the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection, enabling an increased responsivity of 709 mA/W. Besides, the heterojunction photodetector exhibits a response bandwidth of ~1.0 GHz and a uniform photodetection over a wide spectral range, as experimentally measured from 1500 to 1630 nm. The demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current, high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon, lithium niobate, polymer, etc.

physics.optics↗

arXiv2018

Second harmonic generation in atomically thin MoTe2

We have studied on optical second harmonic generations (SHGs) from atomically thin MoTe2 flakes with 2H and 1T' phases. From 2H-MoTe2 samples with odd (even) numbers of layers, strong (negligible) SHGs are observed due to the layer-dependent broken inversion symmetry. When pumped by a telecom-band laser, SHG from a monolayer 2H-MoTe2 is about one order of magnitude stronger than that from a monolayer WS2; an extremely high second-order nonlinear susceptibility of 2.5 nm/V is estimated, presenting the highest value among those reported in two-dimensional materials. SHG measurements in MoTe2 are also demonstrated as an efficient way to distinguish the 2H-to-1T' phase transition. Comparing to the SHG in 2H-MoTe2, 1T'-MoTe2's SHG has much lower efficiency and the polarization dependence is changed from six-fold to two-lobe pattern.

physics.optics↗