arXiv subjects

Roman Kramer

Publications and source records attributed to Roman Kramer.

3 recordsLinked to original sources

arXiv2026

Emergent thermal fluctuations and non-Hermitian phase transitions in open photon condensates

We investigate the nonequilibrium dynamics of an open photon Bose-Einstein condensate in a dye-filled microcavity using a Lindblad master-equation approach, treating the condensate and the noncondensed fluctuations on the same footing. The driven-dissipative condensate exhibits a long-lived, metastable plateau stabilized by a ghost attractor, a fixed point that lies outside the physical domain in configuration space, yet stalls the condensate dynamics for exceedingly long times before it dephases to zero [Phys. Rev. Lett. 135, 053402 (2025)]. Despite the nonequilibrium origin of this dynamical stabilization, the condensate exhibits quasithermal fluctuations in the plateau in that the relative order-parameter fluctuations scale as the inverse square root of the system size. A linear stability analysis further reveals the presence of exceptional points, resulting in multiple non-Hermitian phase transitions associated with the relaxation dynamics into and out of the metastable condensate.

cond-mat.quant-gas↗

arXiv2025

Stabilizing open photon condensates by ghost-attractor dynamics

We study the temporal, driven-dissipative dynamics of open photon Bose-Einstein condensates (BEC) in a dye-filled microcavity, taking the condensate amplitude and the noncondensed fluctuations into account on the same footing by means of a cumulant expansion within the Lindblad formalism. The fluctuations fundamentally alter the dynamics in that the BEC always dephases to zero for sufficiently long time. However, a ghost-attractor, although it is outside of the physically accessible configuration space, attracts the dynamics and leads to a plateau-like stabilization of the BEC for an exponentially long time, consistent with experiments. We also show that the photon BEC and the lasing state are separated by a true phase transition, since they are characterized by different fixed points. The ghost-attractor nonequilibrium stabilization mechanism is alternative to prethermalization and may possibly be realized on other dynamical platforms as well.

cond-mat.quant-gas↗

arXiv2020

Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowires

Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible semiconductor-superconductor interfaces. Here, we realize and measure axial Al-Ge-Al nanowire heterostructures with atomically precise interfaces, enwrapped by an ultrathin epitaxial Si layer further denoted as Al-Ge/Si-Al nanowire heterostructures. The heterostructures were synthesized by a thermally induced exchange reaction of single-crystalline Ge/Si core/shell nanowires and lithographically defined Al contact pads. Applying this heterostructure formation scheme enables self-aligned quasi one-dimensional crystalline Al leads contacting ultrascaled Ge/Si segments with contact transparencies greater than 96%. Integration into back-gated field-effect devices and continuous scaling beyond lithographic limitations allows us to exploit the full potential of the highly transparent contacts to the 1D hole gas at the Ge-Si interface. This leads to the observation of ballistic transport as well as quantum confinement effects up to temperatures of 150 K. Low-temperature measurements reveal proximity-induced superconductivity in the Ge/Si core/shell nanowires. The realization of a Josephson field-effect transistor allows us to study the subgap structure caused by multiple Andreev reflections. Most importantly, the absence of a quantum dot regime indicates a hard superconducting gap originating from the highly transparent contacts to the 1D hole gas, which is potentially interesting for the study of Majorana zero modes. Moreover, underlining the importance of the proposed thermally induced Al-Ge/Si-Al heterostructure formation technique, our system could contribute to the development of key components of quantum computing such as gatemon or transmon qubits

cond-mat.mes-hall↗