arXiv subjects

Rodion Novkin

Publications and source records attributed to Rodion Novkin.

5 recordsLinked to original sources

arXiv2026

NN-Based FeFET Compact Modeling for SPICE Simulation

Prototyping and early-stage circuit evaluation for emerging transistor technologies require fast and accurate compact models for SPICE simulations. Standard physics-based compact models, such as BSIM, offer high fidelity but demand extensive domain expertise and time-consuming equation formulation for every new physical effect, significantly slowing technology development. Neural network (NN)-based models offer a scalable alternative approach, but they rely heavily on smooth numerical solver data with explicit high-order derivative information. However, measurement data suffers from complex noise patterns, making derivative extraction challenging and complicating NN-based transistor modeling. This work presents a derivative-free NN training framework employing spectral normalization to naturally smooth derivative behavior and filter measurement noise. Using drain current measurements from a fabricated 28 nm ferroelectric device, we design an NN-based compact model that captures the full spectrum of polarization amplitudes and supports dynamic polarization switching in transient simulations. To demonstrate its capability, we deploy the model in a commercial SPICE software to simulate write and read operations for large-scale memory arrays with up to 512x512 size, including parasitic effects. Our approach bridges raw measurements with NN-based SPICE-compatible transistor modeling, significantly reducing model development time and enabling rapid circuit-level prototyping for emerging devices.

cs.ET↗

arXiv2026

NN-Based Transistor Modeling for Ultra-Fast SPICE Simulation and Standard Cell Library Characterization

Neural network (NN)-based transistor models have proven to be a promising solution to accelerate device modeling. Although these models demonstrated remarkable speedup in circuit simulations, they were not rigorously tested in complex tasks within standard EDA tool flows for chip design, which require very high transistor model precision to provide accurate results and converge properly. To investigate their full potential and promise, we develop NN-based transistor models that accurately predict the drain current and various charges for a 3nm nanosheet, and employ the models for a standard cell library characterization. This enables us to evaluate the accuracy and speedup under a very wide range of SPICE simulations, benchmarking our models against an industry-standard implementation. Since standard cell library characterization involves thousands of SPICE simulations, it serves as a great benchmark for transistor model quality and consistency. To further evaluate model accuracy, we also perform analog- and digital-level simulations for various complex circuits. Our experiments reveal that NN-based models are a valid alternative to existing transistor compact models, capable of producing accurate delay and power estimates with a much higher speed and convergence time compared to the conventional Verilog-A-based industry-standard (BSIM-CMG) transistor compact model. Our NNs achieve sub-0.11% and 0.76% errors for delay and total power evaluation on a wide range of circuits, while taking up to 8 times less time during the standard cell library characterization. Additionally, we provide comprehensive information and guidance on NN accuracy, unveiling the relationship between NN size and its effect on circuit simulation precision.

cs.ET↗

arXiv2025

Kolmogorov-Arnold Network for Transistor Compact Modeling

Neural network (NN)-based transistor compact modeling has recently emerged as a transformative solution for accelerating device modeling and SPICE circuit simulations. However, conventional NN architectures, despite their widespread adoption in state-of-the-art methods, primarily function as black-box problem solvers. This lack of interpretability significantly limits their capacity to extract and convey meaningful insights into learned data patterns, posing a major barrier to their broader adoption in critical modeling tasks. This work introduces, for the first time, Kolmogorov-Arnold network (KAN) for the transistor - a groundbreaking NN architecture that seamlessly integrates interpretability with high precision in physics-based function modeling. We systematically evaluate the performance of KAN and Fourier KAN for FinFET compact modeling, benchmarking them against the golden industry-standard compact model and the widely used MLP architecture. Our results reveal that KAN and FKAN consistently achieve superior prediction accuracy for critical figures of merit, including gate current, drain charge, and source charge. Furthermore, we demonstrate and improve the unique ability of KAN to derive symbolic formulas from learned data patterns - a capability that not only enhances interpretability but also facilitates in-depth transistor analysis and optimization. This work highlights the transformative potential of KAN in bridging the gap between interpretability and precision in NN-driven transistor compact modeling. By providing a robust and transparent approach to transistor modeling, KAN represents a pivotal advancement for the semiconductor industry as it navigates the challenges of advanced technology scaling.

cs.LG↗

arXiv2021

Bit Error Tolerance Metrics for Binarized Neural Networks

To reduce the resource demand of neural network (NN) inference systems, it has been proposed to use approximate memory, in which the supply voltage and the timing parameters are tuned trading accuracy with energy consumption and performance. Tuning these parameters aggressively leads to bit errors, which can be tolerated by NNs when bit flips are injected during training. However, bit flip training, which is the state of the art for achieving bit error tolerance, does not scale well; it leads to massive overheads and cannot be applied for high bit error rates (BERs). Alternative methods to achieve bit error tolerance in NNs are needed, but the underlying principles behind the bit error tolerance of NNs have not been reported yet. With this lack of understanding, further progress in the research on NN bit error tolerance will be restrained. In this study, our objective is to investigate the internal changes in the NNs that bit flip training causes, with a focus on binarized NNs (BNNs). To this end, we quantify the properties of bit error tolerant BNNs with two metrics. First, we propose a neuron-level bit error tolerance metric, which calculates the margin between the pre-activation values and batch normalization thresholds. Secondly, to capture the effects of bit error tolerance on the interplay of neurons, we propose an inter-neuron bit error tolerance metric, which measures the importance of each neuron and computes the variance over all importance values. Our experimental results support that these two metrics are strongly related to bit error tolerance.

cs.LG↗

arXiv2020

Towards Explainable Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks

Non-volatile memory, such as resistive RAM (RRAM), is an emerging energy-efficient storage, especially for low-power machine learning models on the edge. It is reported, however, that the bit error rate of RRAMs can be up to 3.3% in the ultra low-power setting, which might be crucial for many use cases. Binary neural networks (BNNs), a resource efficient variant of neural networks (NNs), can tolerate a certain percentage of errors without a loss in accuracy and demand lower resources in computation and storage. The bit error tolerance (BET) in BNNs can be achieved by flipping the weight signs during training, as proposed by Hirtzlin et al., but their method has a significant drawback, especially for fully connected neural networks (FCNN): The FCNNs overfit to the error rate used in training, which leads to low accuracy under lower error rates. In addition, the underlying principles of BET are not investigated. In this work, we improve the training for BET of BNNs and aim to explain this property. We propose straight-through gradient approximation to improve the weight-sign-flip training, by which BNNs adapt less to the bit error rates. To explain the achieved robustness, we define a metric that aims to measure BET without fault injection. We evaluate the metric and find that it correlates with accuracy over error rate for all FCNNs tested. Finally, we explore the influence of a novel regularizer that optimizes with respect to this metric, with the aim of providing a configurable trade-off in accuracy and BET.

cs.LG↗