arXiv subjects

Robin Durand

Publications and source records attributed to Robin Durand.

3 recordsLinked to original sources

arXiv2026

Electrostatics of Chern junctions in a magnetic field

Electrostatic control is central to the operation of semiconductor junctions made from conventional materials. Here, we theoretically investigate the electrostatic properties of lateral junctions between two-dimensional (2D) Chern semiconductors in a perpendicular magnetic field. The spectral asymmetry of a Chern semiconductor acts as a magnetic-field-induced effective dopant density that is dependent on the Chern number. As a consequence, two regions with different Chern numbers acquire different chemical potentials at charge neutrality, leading to a built-in potential of topological origin across the junction. Using this built-in potential as a boundary condition, we solve the 2D Poisson equation to obtain the electric potential and charge density profiles, as well as the capacitance, of Chern semiconductor junctions. Our results inform the interplay between electronic topology and electrostatics in devices made from 2D materials.

cond-mat.mes-hall↗

arXiv2024

Nonlinear longitudinal current of band-geometric origin in wires of finite thickness

The miniaturization of integrated circuits is facing an obstruction due to the escalating electrical resistivity of conventional copper interconnects. The underlying reason for this problem was unveiled by Fuchs and Sondheimer, who showed that thinner wires are more resistive because current-carrying electrons encounter the rough surfaces of the wire more frequently therein. Here, we present a generalization of the Fuchs-Sondheimer theory to Dirac and Weyl materials, which are candidates for next-generation interconnects. We predict a nonlinear longitudinal electric current originating from the combined action of the Berry curvature and non-specular surface-scattering.

cond-mat.mes-hall↗

arXiv2023

Van Roosbroeck's equations with topological terms: the case of Weyl semimetals

Van Roosbroeck's equations constitute a versatile tool to determine the dynamics of electrons under time- and space-dependent perturbations. Extensively utilized in ordinary semiconductors, their potential to model devices made from topological materials remains untapped. Here, we adapt van Roosbroeck's equations to theoretically study the bulk response of a Weyl semimetal to an ultrafast and spatially localized light pulse in the presence of a quantizing magnetic field. We predict a transient oscillatory photovoltage that originates from the chiral anomaly. The oscillations take place at the plasma frequency (THz range) and are damped by intervalley scattering and dielectric relaxation. Our results illustrate the ability of van Roosbroeck's equations to unveil the interplay between electronic band topology and fast carrier dynamics in microelectronic devices.

cond-mat.mes-hall↗