arXiv subjects

Rithvik Ramesh

Publications and source records attributed to Rithvik Ramesh.

4 recordsLinked to original sources

arXiv2026

Laser electro-optic frequency comb in lithium niobate nanophotonics

Optical frequency combs have revolutionized precision science and technology, yet their nanophotonic implementations have failed to simultaneously achieve high efficiency, power, and coherence. Optically driven microcombs provide broad and stable spectra but low usable power, whereas active comb generators, including mode-locked lasers, can be efficient yet offer less control over coherence. We introduce the laser electro-optic (LEO) frequency comb, a comb-generation mechanism in which coherent continuous-wave injection drives a phase-modulated laser cavity above threshold into a distinct operating regime. Unlike other coherently driven integrated comb sources, the LEO comb generates comb powers that exceed the injected continuous-wave power by an order of magnitude. We realize the LEO comb in a hybrid lithium niobate/III-V nanophotonic circuit and demonstrate milliwatt-level power per comb line, 1.76-ps pulses, a 4.7-nm background-free spectrum, and linewidths as narrow as 19.6 kHz. By unifying high efficiency, power, and coherence, this architecture establishes a definitive route to chip-scale frequency comb sources that deliver on the promise of scalable, high-performance coherent optical technologies.

physics.optics↗

arXiv2026

Quantum-Well-Metasurface to Maximize Nonlinear Polarization

Nonlinear frequency conversion unlocks technologies ranging from telecommunications to quantum computation; however, weak nonlinearities and architectures that resist miniaturization currently limit devices. Here, we combine a bandstructure-engineered GaAs/AlGaAs heterostructure with a high quality factor dielectric metasurface to simultaneously tailor the intrinsic nonlinear susceptibility and optimize the electromagnetic field within the heterostructure. By engineering a resonant interband transition, we realize a large second-order nonlinear tensor element, 1.6 nm/V at 1.57 um wavelength. We then make it free-space-accessible and boost the effective nonlinearity to ~ 14 nm/V using a metasurface patterned on the material. Our proof-of-concept experiment establishes that interband transition engineering and metasurfaces accessing otherwise unusable nonlinear tensor elements enable giant effective nonlinearities in the near-infrared to visible spectrum. This addresses material and device-level constraints in nonlinear photonics, providing a scalable route to compact, efficient devices.

physics.optics↗

arXiv2026

Enhanced Interband Optical Nonlinearities from Coupled Quantum Wells

The recent, rapid advances in nonlinear chipscale nanophotonics in the visible and near-infrared have been largely driven by manipulating the local dielectric environment proximate to decades-old workhorse bulk nonlinear optical materials, rather than increasing the inherent strength of their nonlinear response. While proposed decades ago, we demonstrate the first experimental realization of a new class of designer nonlinear materials that leverage the interband optical transition in asymmetric structures to provide strong second order susceptibility, $\chi^{(2)}$. Using simple AlGaAs/GaAs coupled quantum wells operating in the near-infrared as a prototype, we observed strong second harmonic generation enhancement of 1550 nm to 775 nm over bulk controls. Extracted $\chi^{(2)}$ values were as high as 2750 pm/V, which is $>$7x that of bulk GaAs. Furthermore, measured susceptibilities agreed well with quantum mechanical calculations of $\chi^{(2)}$ using layer profiles extracted from electron microscopy. Growth interruptions were employed to improve interfacial abruptness in response to electron microscopy characterization, resulting in increased $\chi^{(2)}$ toward the simulation predictions for ideal heterointerfaces. More complex layer designs showed predicted $\chi^{(2)}$ up to 7 nm/V. Such materials are anticipated to find myriad applications, including entangled photon generation at telecommunications wavelengths for chipscale quantum information processing.

physics.optics↗

arXiv2025

Topological Soliton Frequency Comb in Nanophotonic Lithium Niobate

Frequency combs have revolutionized metrology, ranging, and optical clocks, which have motivated substantial efforts on the development of chip-scale comb sources. The on-chip comb sources are currently based on electro-optic modulation, mode-locked lasers, quantum cascade lasers, or soliton formation via Kerr nonlinearity. However, the widespread deployment of on-chip comb sources has remained elusive as they still require RF sources, high-Q resonators, or complex stabilization schemes while facing efficiency challenges. Here, we demonstrate an on-chip source of frequency comb based on the integration of a lithium niobate nanophotonic circuit with a semiconductor laser that can alleviate these challenges. For the first time, we show the formation of temporal topological solitons in a on-chip nanophotonic parametric oscillator with quadratic nonlinearity and low finesse. These solitons, independent of the dispersion regime, consist of phase defects separating two $\pi$-out-of-phase continuous wave solutions at the signal frequency, which is at half the input pump frequency. We use on-chip cross-correlation for temporal measurements and confirm formation of topological solitons as short as 60 fs around 2 $\mu$m, in agreement with a generalized parametrically forced Ginzburg-Landau theory. Moreover, we demonstrate a proof-of-concept turn-key operation of a hybrid-integrated source of topological frequency comb. Topological solitons offer a new paradigm for integrated comb sources, which are dispersion-sign agnostic and do not require high-Q resonators or high-speed modulators and can provide access to hard-to-access spectral regions, including mid-infrared.

physics.optics↗