arXiv subjects

Renchao Che

Publications and source records attributed to Renchao Che.

12 recordsLinked to original sources

arXiv2026

Observation of Magnetic-Anisotropy Crossover and High-Temperature Skyrmions in the Dirac Magnet Fe3Ge with a Distorted Kagome Lattice

Topological materials that simultaneously host robust high-temperature skyrmions and nontrivial electronic band structures have attracted tremendous interest owing to their distinctive advantages for both fundamental research and prospective technological applications. Here, we report the observation of robust skyrmions in the Dirac kagome magnet Fe3Ge, which exhibits a high Curie temperature of ~ 650 K. At room temperature, Fe3Ge shows a large intrinsic anomalous Hall conductivity of ~ 380 {\Omega}-1cm-1, originating from its nontrivial electronic band topology. Systematic magnetization measurements reveal a spin reorientation transition at ~ 375 K, indicating a crossover from easy-plane to easy-axis magnetic anisotropy. Below the spin reorientation temperature, a large topological Hall effect is observed, arising from microscopic noncoplanar spin structures. Lorentz transmission electron microscopy shows that mesoscopic skyrmions are stabilized in the easy-axis magnetic anisotropy regime and persist over an exceptionally wide temperature window of 375-650 K, far exceeding that of most previously reported skyrmion-hosting materials. These results establish Fe3Ge as a promising platform for exploring diverse topological properties, with strong potential for advancing future high-temperature spintronic applications, ranging from next-generation information storage to logic computing devices.

cond-mat.mtrl-sci↗

arXiv2026

Voltage-controlled topological spin textures in the monolayer limit

The physics of phase transitions in low-dimensional systems has long been a subject of significant research interest. Long-range magnetic order in the strict two-dimensional limit, whose discovery circumvented the Mermin-Wagner theorem, has rapidly emerged as a research focus. However, the demonstration of a non-trivial topological spin textures in two-dimensional limit has remained elusive. Here, we demonstrate the out-of-plane electric field breaks inversion symmetry while simultaneously modulating the electronic band structure, enabling electrically tunable spin-orbit interaction for creation and manipulation of topological spin textures in monolayer CrI3. The realization of ideal two-dimensional topological spin textures may offer not only an experimental testbed for probing the Berezinskii-Kosterlitz-Thouless mechanism, but also potential insights into unresolved quantum phenomena including superconductivity and superfluidity. Moreover, voltage-controlled spin-orbit interaction offers a novel pathway to engineer two-dimensional spin textures with tailored symmetries and topologies, while opening avenues for skyrmion-based next-generation information technologies.

cond-mat.mes-hall↗

arXiv2024

Tunable interfacial Rashba spin-orbit coupling in asymmetric Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures

The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum confinement, while the unidirectional built-in electric field from the asymmetric hetero-interfaces results in pronounced Rashba SOC strength. By tuning the Al concentration in the top Al$_x$In$_{1-x}$Sb barrier layer, the optimal structure with $x = 0.15$ shows the largest Rashba coefficient of 0.23 eV-Angstrom. and the highest low-temperature electron mobility of 4400 cm$^2$/Vs . Quantitative investigations of the weak anti-localization effect further confirm the dominant D'yakonov-Perel (DP) spin relaxation mechanism during charge-to-spin conversion. These findings highlight the significance of quantum well engineering in shaping magneto-resistance responses, and narrow bandgap semiconductor-based heterostructures may offer a reliable platform for energy-efficient spintronic applications.

cond-mat.mtrl-sci↗

arXiv2023

Observation of unconventional van der Waals multiferroics near room temperature

The search for two-dimensional (2D) van der Waals (vdW) multiferroics is an exciting yet challenging endeavor. Room-temperature 2D vdW few-layer multiferroic is a much bigger insurmountable obstacle. Here we report the discovery of an unconventional 2D vdW multiferroic with out-of-plane ferroelectric polarization and long-range magnetic orders in trilayer NiI2 device from 10 K to 295 K. The evolutions of magnetic domains with magnetic field, and the evolutions between ferroelectric and antiferroelectric phase have been unambiguously observed. More significantly, we realize a robust mutual control of magnetism and ferroelectricity at room temperature. The magnetic domains are manipulated by a small voltage ranging from 1 V to 6 V at 0 T and 295 K. This work opens opportunities for exploring multiferroic physics at the limit of few atomic layers.

cond-mat.mtrl-sci↗

arXiv2023

Interplay between moment-dependent and field-driven unidirectional magnetoresistance in CoFeB/InSb/CdTe heterostructures

Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence of magnetic moment-dependent (MD) and magnetic field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to the different spin transport mechanisms, these two types of nonreciprocal charge transport show opposite polarities with respect to the magnetic field direction, which further enable an effective phase modulation of the angular-dependent magnetoresistance. Besides, the demonstrations of both the tunable UMR response and two-terminal spin-orbit torque-driven magnetization switching validate our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic device design.

physics.app-ph↗

arXiv2023

Antisymmetric Planar Hall Effect in Rutile Oxide Films Induced by the Lorentz Force

The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect (APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO2 and IrO2 single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.

cond-mat.mes-hall↗

arXiv2022

Room Temperature Gate Tunable Non Reciprocal Charge Transport in Lattice Matched InSb/CdTe Heterostructures

The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe film up to room temperature. Benefiting from the strong built-in electric field of $0.13 \mathrm{~V} \cdot \mathrm{nm}^{-1}$ in the hetero-junction region, the resulting Rashba-type spin-orbit coupling and quantum confinement warrant stable angular-dependent second-order charge current with the non-reciprocal coefficient 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298 K. More importantly, this heterostructure configuration enables highly-efficient gate tuning of the rectification response in which the enhancement of the UMR amplitude by 40% is realized. Our results advocate the narrow-gap semiconductor-based hybrid system with the robust two-dimensional interfacial spin texture as a suitable platform for the pursuit of controllable chiral spin-orbit devices and applications.

cond-mat.mes-hall↗

arXiv2021

Deterministic generation of skyrmions and antiskyrmions by electric current

Magnetic skyrmions are nanoscale spin whirlpools that promise breakthroughs in future spintronic applications. Controlled generation of magnetic skyrmions by electric current is crucial for this purpose. While previous studies have demonstrated this operation, the topological charge of the generated skyrmions is determined by the direction of the external magnetic fields, thus is fixed. Here, we report the current-induced skyrmions creation in a chiral magnet FeGe nanostructure by using the \emph{in-situ} Lorentz transmission electron microscopy. We show that magnetic skyrmions or antiskyrmions can be both transferred from the magnetic helical ground state simply by controlling the direction of the current flow at zero magnetic field. The force analysis and symmetry consideration, backed up by micromagnetic simulations, well explain the experimental results, where magnetic skyrmions or antiskyrmions are created due to the edge instability of the helical state in the presence of spin transfer torque. The on-demand generation of skyrmions and control of their topology by electric current without the need of magnetic field will enable novel purely electric-controlled skyrmion devices.

cond-mat.mtrl-sci↗

arXiv2015

Edge-Mediated Skyrmion Chain and Its Collective Dynamics in a Confined Geometry

The emergence of a topologically nontrivial vortex-like magnetic structure, the magnetic skyrmion, has launched new concepts for memory devices. There, extensive studies have theoretically demonstrated the ability to encode information bits by using a chain of skyrmions in one-dimensional nanostripes. Here, we report the first experimental observation of the skyrmion chain in FeGe nanostripes by using high resolution Lorentz transmission electron microscopy. Under an applied field normal to the nanostripes plane, we observe that the helical ground states with distorted edge spins would evolves into individual skyrmions, which assemble in the form of chain at low field and move collectively into the center of nanostripes at elevated field. Such skyrmion chain survives even as the width of nanostripe is much larger than the single skyrmion size. These discovery demonstrates new way of skyrmion formation through the edge effect, and might, in the long term, shed light on the applications.

cond-mat.mes-hall↗

arXiv2015

Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires

Magnetic skyrmions are topologically stable whirlpool-like spin textures that offer great promise as information carriers for future ultra-dense memory and logic devices1-4. To enable such applications, particular attention has been focused on the skyrmions properties in highly confined geometry such as one dimensional nanowires5-8. Hitherto it is still experimentally unclear what happens when the width of the nanowire is comparable to that of a single skyrmion. Here we report the experimental demonstration of such scheme, where magnetic field-driven skyrmion cluster (SC) states with small numbers of skyrmions were demonstrated to exist on the cross-sections of ultra-narrow single-crystal MnSi nanowires (NWs) with diameters, comparable to the skyrmion lattice constant (18 nm). In contrast to the skyrmion lattice in bulk MnSi samples, the skyrmion clusters lead to anomalous magnetoresistance (MR) behavior measured under magnetic field parallel to the NW long axis, where quantized jumps in MR are observed and directly associated with the change of the skyrmion number in the cluster, which is supported by Monte Carlo simulations. These jumps show the key difference between the clustering and crystalline states of skyrmions, and lay a solid foundation to realize skyrmion-based memory devices that the number of skyrmions can be counted via conventional electrical measurements.

cond-mat.mes-hall↗

arXiv2014

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magnetoresistance but limited carrier transport tunability. Here, we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a 50 nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov-de Haas (SdH) oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principles calculations. The present results offer new insights towards nanoelectronic and optoelectronic applications of Dirac semimetals in general, and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized.

cond-mat.mtrl-sci↗

arXiv2008

Electron energy-loss spectroscopy and ab initio electronic structure of the LaOFeP superconductor

The electronic band structures of the LaOFeP superconductor have been calculated theoretically by the first principles method and measured experimentally by electron energy loss spectroscopy. The calculations indicate that the Fe atom in LaOFeP crystal shows a weak magnetic moment and does not form a long-range magnetic ordering. Band structure, Fermi surfaces and fluorine-doping effects are also analyzed based on the data of the density functional theory. The fine structures of the EELS data have been carefully examined in both the low loss energy region and the core losses region (O K, Fe L2,3, and La M4,5). A slight bump edge at 44 eV shows notable orientation-dependence: it can be observed in the low loss EELS spectra with q parallel to c, but becomes almost invisible in the q vertical to c spectra. Annealing experiments indicate that low oxygen pressure favors the appearance of superconductivity in LaOFeP, this fact is also confirmed by the changes of Fe L2,3 and O K excitation edges in the experimental EELS data.

cond-mat.supr-con↗