arXiv subjects

Rafael Jaramillo

Publications and source records attributed to Rafael Jaramillo.

8 recordsLinked to original sources

arXiv2026

Deep-level engineering in aluminum nitride (AlN) enables reliable photodetection in extreme conditions

Semiconductor photodetectors are conventionally optimized for sensing weak optical signals, and they typically saturate at low-to-moderate light intensity. Here, we demonstrate AlN photodetectors that exhibit non-saturating linear response to ultra-bright, sub-bandgap light exceeding 40 $\mathrm{W/cm^2}$ (over 400 Suns). The photodetector further shows undistorted linear response at elevated temperature, up to at least 300 $\mathrm{^\circ C}$. This exceptional performance originates from photoresponse mediated by point defects with energy levels deep in the bandgap (deep levels) at the metal-AlN Schottky junction. Through dopant design and contact engineering, we demonstrate that a narrow space-charge region is essential for enabling ultra-bright light detection and accurate measurement. These results establish a strategy for engineering ultra-wide bandgap (UWBG) semiconductor devices for reliable operation in extreme conditions to meet emerging needs in industrial process control, thermal and nuclear power generation, and aeronautics and spaceflight.

physics.optics↗

arXiv2026

Anion Ordering and Phase Stability Govern Optical Band Gaps in BaZr(S,Se)3

Chalcogenide perovskites have emerged as promising lead free materials for photovoltaic and thermoelectric applications. Among them, BaZrS3 has attracted particular attention due to its thermal and chemical stability, favorable optoelectronic properties, and low thermal conductivity. Here, we combine molecular dynamics and Monte Carlo simulations based on machine learned interatomic potentials with scanning transmission electron microscopy to investigate mixing thermodynamics and phase stability in the BaZr(S,Se)3 system. We identify an unusual ordered structure that persists at room temperature, most prominently at 33% S, where S and Se atoms form alternating layers within the crystal. Free energy calculations yield the temperature composition phase diagram, including a nonperovskite delta phase in the Se rich limit and a perovskite phase in the S rich limit, separated by a broad two phase region. Analysis of the dielectric function and the absorption coefficient demonstrates that composition, crystal structure, and anion ordering jointly control the optical band gap. Selenium alloying enables tuning between approximately 1.6 and 1.9eV, while anion ordering within a given composition reduces the gap by about 0.12eV. Lastly, variations between structural polymorphs give rise to band gap differences of up to 0.4eV.

cond-mat.mtrl-sci↗

arXiv2025

Prediction of Ambient-Pressure High-Temperature Superconductivity in Doped Transition-Metal Hydrides

The search for conventional superconductors with high transition temperatures ($T_c$) has largely focused on intrinsically metallic compounds. In this work, we explore the potential of intrinsically non-metallic compounds to exhibit high-$T_c$ superconductivity under ambient pressure through carrier doping. We identify $\rm MgAlFeH_6$, a representative of carrier-doped transition-metal hydrides like $\rm Mg_2FeH_6$, as a promising example with a predicted $T_c \approx 130~\rm K$. We propose that the average projected electron density of states, defined as the geometric mean of the total and hydrogen-projected density of states at the Fermi level, serves as a simple and computationally inexpensive indicator of high-$T_c$ behavior. We also highlight the tradeoff between high-$T_c$ and dynamic stability, both of which depend on the electron density of states. Our findings thus expand the pool of potential superconducting materials and offer a practical route for accelerating the discovery of superconductors suitable for real-world applications.

cond-mat.supr-con↗

arXiv2025

Electronic mobility, doping, and defects in epitaxial $\mathrm{BaZrS_3}$ chalcogenide perovskite thin films

We present the electronic transport properties of $\mathrm{BaZrS_3}$ (BZS) thin films grown epitaxially by gas-source molecular beam epitaxy (MBE). We observe n-type behavior in all samples, with carrier concentration ranging from $4 \times 10^{18}$ to $4 \times 10^{20} \mathrm{cm^{-3}}$ at room temperature (RT). We observe a champion RT Hall mobility of 11.1 $\mathrm{cm^2V^{-1}s^{-1}}$, which is competitive with established thin-film photovoltaic (PV) absorbers. Temperature-dependent Hall mobility data show that phonon scattering dominates at room temperature, in agreement with computational predictions. X-ray diffraction data illustrate a correlation between mobility and stacking fault concentration, illustrating how microstructure can affect transport. Despite the well-established environmental stability of chalcogenide perovskites, we observe significant changes to electronic properties as a function of storage time in ambient conditions. With the help of secondary-ion mass-spectrometry (SIMS) measurements, we propose and support a defect mechanism that explains this behavior: as-grown films have a high concentration of sulfur vacancies that are shallow donors ($\mathrm{V_S^\bullet}$ or $\mathrm{V_S^{\bullet \bullet}}$), which are converted into neutral oxygen defects ($\mathrm{O_S^\times}$) upon air exposure. We discuss the relevance of this defect mechanism within the larger context of chalcogenide perovskite research, and we identify means to stabilize the electronic properties.

cond-mat.mtrl-sci↗

arXiv2024

Atomic Structure of Self-Buffered BaZr(S,Se)$_3$ Epitaxial Thin Film Interfaces

Understanding and controlling the growth of chalcogenide perovskite thin films through interface design is important for tailoring film properties. Here, the film and interface structure of BaZr(S,Se)$_3$ thin films grown on LaAlO$_3$ by molecular beam epitaxy and post-growth anion exchange is resolved using aberration-corrected scanning transmission electron microscopy. Epitaxial films are achieved from self-assembly of an interface ``buffer'' layer, which accommodates the large film/substrate lattice mismatch of nearly 40\% for the alloy film studied here. The self-assembled buffer layer, occurring for both the as-grown sulfide and post-selenization alloy films, is shown to have rock-salt-like atomic stacking akin to a Ruddlesden-Popper phase. Above this buffer, the film quickly transitions to the perovskite structure. Overall, these results provide insights into oxide-chalcogenide heteroepitaxial film growth, illustrating a process that yields relaxed, crystalline, epitaxial chalcogenide perovskite films that support ongoing studies of optoelectronic and device properties.

cond-mat.mtrl-sci↗

arXiv2023

Pressure-Dependent Layer-by-Layer Oxidation of ZrS2(001) Surface

Understanding oxidation mechanisms of layered semiconducting transition-metal dichalcogenide (TMDC) is important not only for controlling native oxide formation but also for synthesis of oxide and oxysulfide products. Here, reactive molecular dynamics simulations show that oxygen partial pressure controls not only the ZrS2 oxidation rate but also the oxide morphology and quality. We find a transition from layer-by-layer oxidation to amorphous-oxide-mediated continuous oxidation as the oxidation progresses, where different pressures selectively expose different oxidation stages within a given time window. While the kinetics of the fast continuous oxidation stage is well described by the conventional Deal-Grove model, the layer-by-layer oxidation stage is dictated by reactive bond-switching mechanisms. This work provides atomistic details and a potential foundation for rational pressure-controlled oxidation of broad TMDC materials.

cond-mat.mtrl-sci↗

arXiv2020

Growth kinetics and atomistic mechanisms of native oxidation of ZrS$_x$Se$_{2-x}$ and MoS$_2$ crystals

A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and proceeds by a mechanism of Zr-O bond switching, that collapses the van der Waals gaps, and is facilitated by progressive redox transitions of the chalcogen. The rate-limiting process is the formation and out-diffusion of SO$_2$. In contrast, MoS$_2$ basal surfaces are stable due to unfavorable oxygen adsorption. Our results provide insight and quantitative guidance for designing and processing semiconductor devices based on ZrS$_x$Se$_{2-x}$ and MoS$_2$, and identify the atomistic-scale mechanisms of bonding and phase transformations in layered materials with competing anions.

cond-mat.mtrl-sci↗

arXiv2019

In Praise and in Search of Highly-Polarizable Semiconductors

The dielectric response of materials underpins electronics and photonics. Established semiconductor materials have a narrow range of dielectric susceptibility, with low-frequency values on the order of 10. Strong and variable dielectric response in wide-band gap materials is associated with complex crystal structures and heavier elements. Based on underlying chemical trends, we hypothesize that chalcogenides in crystal structures common to complex oxides may feature many highly-polarizable semiconductors. Research on these materials is motivated by fundamental inquiry into electrons and phonons in solids, and by potential applications in photonics, high-frequency communications, and photovoltaics.

cond-mat.mtrl-sci↗