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Quanlin Guo

Publications and source records attributed to Quanlin Guo.

3 recordsLinked to original sources

Direct Measurement of Exciton Dispersion in the Long-Wavelength Limit

Exciton dispersion, which governs the propagation, scattering and radiative decay of electron-hole pairs, is essential to optoelectronics and quantum materials. In two-dimensional systems, weakened dielectric screening and long-range electron-hole exchange are predicted to induce nonanalytic exciton dispersion in the long-wavelength limit. However, direct quantitative characterization of its dimensional evolution remains lacking, especially in the ultralow-q regime (q < 0.02 $\r{A}^{-1}$). Here we employ defocus-engineered momentum-resolved electron energy-loss spectroscopy in scanning transmission electron microscopy, achieving an ultrahigh momentum resolution of 0.0002 $\r{A}^{-1}$. Using freestanding hBN as a prototypical platform, we resolve layer-dependent exciton dispersion and quantify its characteristic crossover momentum and group velocity in the long-wavelength limit. With increasing thickness, the nonanalytic linear-dispersion regime is progressively compressed, manifested by a reduction in characteristic crossover momentum q_c from $1.82 \times 10^{-1} \r{A}^{-1}$ in the monolayer to $3.0 \times 10^{-1} \r{A}^{-1}$ in 25 layers. Meanwhile, the low-q group velocity increases from $2.0 \times 10^{-3} c$ to $2.9 \times 10^{-2} c$, before the dispersion ultimately approaches the bulk-like parabolic limit. We further examine how the exciton band structure of monolayer hBN responds to its surrounding environment, including temperature, adjacent graphene layers, and interlayer twist in BN/graphene heterostructures. These findings uncover the fundamental physics of low-dimensional excitons, deliver valuable guidance for modulating exciton transport, diffusion and quasiparticle coupling in layered quantum materials, and establish a powerful experimental route to explore low-dimensional exciton physics.

cond-mat.mes-hall

Phonon heat conduction across slippery interfaces in twisted graphite

Interlayer rotation in van der Waals (vdW) materials offers great potential for manipulating phonon dynamics and heat flow in advanced electronics with ever higher compactness and power density. However, despite extensive theoretical efforts in recent years, experimental measurements remain scarce especially due to the critical challenges of preparing single-crystalline twisted interfaces and probing interfacial thermal transport with sufficient resolution. Here, we exploited the intrinsic twisted interfaces in highly oriented pyrolytic graphite (HOPG). By developing novel experimental schemes based on microfabricated mesas, we managed to achieve simultaneous mechanical characterizations and thermal measurements. In particular, we pushed the HOPG mesas with a microprobe to identify and rotate single-crystalline intrinsic interfaces owing to their slippery nature as is well known in structural superlubricity. Remarkably, we observed over 30-fold suppression of thermal conductance for the slippery interfaces by using epitaxial graphite as a control. Nonetheless, the interfacial conductance remains around 600 $\mathrm{MWm^{-2}K^{-1}}$ which surpasses the highest values for artificially stacked vdW structures by more than five times. Further, atomic simulations revealed the predominant role of the transverse acoustic phonons. Together, our findings highlight a general physical picture that directly correlates interfacial thermal transport with sliding resistance, and lay the foundation for twist-enabled thermal management which are particularly beneficial to twistronics and slidetronics.

cond-mat.mes-hall

Tunable Interband Transitions in Twisted h-BN/Graphene Heterostructures

In twisted h-BN/graphene heterostructures, the complex electronic properties of the fast-traveling electron gas in graphene are usually considered to be fully revealed. However, the randomly twisted heterostructures may also have unexpected transition behaviors, which may influence the device performance. Here, we study the twist angle-dependent coupling effects of h-BN/graphene heterostructures using monochromatic electron energy loss spectroscopy. We find that the moir\'e potentials alter the band structure of graphene, resulting in a redshift of the intralayer transition at the M-point, which becomes more pronounced up to 0.25 eV with increasing twist angle. Furthermore, the twisting of the Brillouin zone of h-BN relative to the graphene M-point leads to tunable vertical transition energies in the range of 5.1-5.6 eV. Our findings indicate that twist-coupling effects of van der Waals heterostructures should be carefully considered in device fabrications, and the continuously tunable interband transitions through the twist angle can serve as a new degree of freedom to design optoelectrical devices.

cond-mat.mes-hall