arXiv subjects

Qiang Zou

Publications and source records attributed to Qiang Zou.

58 records · Page 4Linked to original sources

arXiv2018

Push-pull direct modeling of solid CAD models

Direct modeling is a very recent CAD modeling paradigm featuring direct, intuitive push-pull interactions with the geometry of the model to much increase model editing flexibility. The major issue for push-pull direct modeling is the possible inconsistency between the altered geometry of the model and its unchanged topology. The challenge of resolving the geometry-topology inconsistency lies in ensuring that the resulting model remains as a valid solid model and that the model shape follows a continuous change pattern. Although push-pull direct modeling has been implemented in several CAD software packages, robustness towards generating valid modeling results and continuous shape changes still remains an open issue. This paper proposes a systematic method to handle the resolution of any possible inconsistent situation. The method formulates the continuous shape change requirement as successive Boolean operations on the model volume, thereby guaranteeing valid solid models and continuous shape changes. Further, this formulation allows for an easy implementation of push-pull direct modeling using existing CAD research and engineering results. In order to show the effectiveness of the proposed method, a software prototype is developed and the modeling results are compared with those of five leading CAD software packages.

cs.CG↗

arXiv2017

Effect of surface morphology and magnetic impurities on the electronic structure in cobalt-doped BaFe2As2 superconductors

Combined scanning tunneling microscopy, spectroscopy and local barrier height (LBH) studies show that low-temperature-cleaved optimally-doped Ba(Fe1-xCox)2As2 crystals with x=0.06, with Tc = 22 K, have complicated morphologies. Although the cleavage surface and hence the morphologies are variable, the superconducting gap maps show the same gap widths and nanometer size inhomogeneities irrelevant to the morphology. Based on the spectroscopy and LBH maps, the bright patches and dark stripes in the morphologies are identified as Ba and As dominated surface terminations, respectively. Magnetic impurities, possibly due to cobalt or Fe atoms, are believed to create local in-gap state and in addition suppress the superconducting coherence peaks. This study will clarify the confusion on the cleavage surface terminations of the Fe-based superconductors, and its relation with the electronic structures.

cond-mat.supr-con↗

arXiv2013

An innovative way of etching MoS2: Characterization and mechanistic investigation

We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.

cond-mat.mes-hall↗

arXiv2011

Silicon Layer Intercalation of Centimeter-Scale, Epitaxially-Grown Monolayer Graphene on Ru(0001)

We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.

cond-mat.mtrl-sci↗