arXiv subjects

Qian Wang

Publications and source records attributed to Qian Wang.

At least 631 records · Page 35Linked to original sources

arXiv2009

Novel electronic and magnetic properties of BN sheet decorated with hydrogen and fluorine

First principles calculations based on density functional theory reveal some unusual properties of BN sheet functionalized with hydrogen and fluorine. These properties differ from those of similarly functionalized graphene even though both share the same honeycomb structure. (1) Unlike graphene which undergoes a metal to insulator transition when fully hydrogenated, the band gap of the BN sheet significantly narrows when fully saturated with hydrogen. Furthermore, the band gap of the BN sheet can be tuned from 4.7 eV to 0.6 eV and the system can be a direct or an indirect semiconductor or even a half-metal depending upon surface coverage. (2) Unlike graphene, BN sheet has hetero-atomic composition, when co-decorated with H and F, it can lead to anisotropic structures with rich electronic and magnetic properties. (3) Unlike graphene, BN sheets can be made ferromagnetic, antiferromagnetic, or magnetically degenerate depending upon how the surface is functionalized. (4) The stability of magnetic coupling of functionalized BN sheet can be further modulated by applying external strain. Our study highlights the potential of functionalized BN sheets for novel applications.

cond-mat.mtrl-sci↗

arXiv2007

Impurity-induced configuration-transition in the Fulde-Ferrell-Larkin-Ovchinnikov state of a d-wave superconductor

The effect of impurities on Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) states in a layered superconductor with d-wave pairing symmetry is investigated using the tight-binding model and the Bogoliubov-de Gennes equations. At low temperature and a strong exchange field applied parallel to its conducting plane, a two-dimensional (2D) square lattice-like Larkin-Ovchinnikov state is more energetically favorable in a clean system. In the presence of impurities, the spatial profile of the order parameter remains as a 2D square lattice, and it is distorted only near the impurities when the impurity concentration is low. As impurity concentration is increased to a certain level, quasi-one-dimensional (1D) like FFLO state becomes more energetically favorable. Increasing temperature with fixed impurity concentration can also induce a 2D to 1D FFLO state transition. Within the present finite size calculation, we did not find the existence of the Fulde and Ferrell state before the system becoming normal as the impurity concentration is raised.

cond-mat.supr-con↗

arXiv2007

Electrically driven thermal light emission from individual single-walled carbon nanotubes

Light emission from nanostructures exhibits rich quantum effects and has broad applications. Single-walled carbon nanotubes (SWNTs) are one-dimensional (1D) metals or semiconductors, in which large number of electronic states in a narrow range of energies, known as van Hove singularities, can lead to strong spectral transitions. Photoluminescence and electroluminescence involving interband transitions and excitons have been observed in semiconducting SWNTs, but are not expected in metallic tubes due to non-radiative relaxations. Here, we show that in the negative differential conductance regime, a suspended quasi-metallic SWNT (QM-SWNT) emits light due to joule-heating, displaying strong peaks in the visible and infrared corresponding to interband transitions. This is a result of thermal light emission in 1D, in stark contrast with featureless blackbody-like emission observed in large bundles of SWNTs or multi-walled nanotubes. This allows for probing of the electronic temperature and non-equilibrium hot optical phonons in joule-heated QM-SWNTs.

cond-mat.mes-hall↗

arXiv2006

Subtle Effects of a nonmagnetic impurity on the sub-gap spectrum of a d-wave superconductor in the Fulde-Ferrell-Larkin-Ovchinnikov state

The effect of a nonmagnetic impurity on the subgap electronic spectrum in a d-wave superconductor in the Fulde-Ferrell-Larkin-Ovchinnikov state is investigated. In a pure system, the spatial variation of the order parameter (OP) of the FFLO state forms a two-dimensional lattice, and there exist two types of sub-gap quasi-particle states. Our numerical iterations indicate that an OP saddle point, and slightly less so energetically, an OP extremum favor to be pinned at the impurity site. The local density of states and the fixed-bias map reveal the subtle effects of an impurity on the subgap energy spectrum, because the OP changes sign in both the (relative) momentum space and the real space.

cond-mat.supr-con↗

arXiv2006

Local tunneling spectroscopy as signatures of the Fulde-Ferrell-Larkin-Ovchinnikov state in s- and d-wave Superconductors

The Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) states for two-dimensional s- and d-wave superconductors (s- and d-SC) are self-consistently studied under an in-plane magnetic field. While the stripe solution of the order parameter (OP) is found to have lower free energy in s-SC, a square lattice solution appears to be energetically more favorable in the case of d-SC. At certain symmetric sites, we find that the features in the local density of states (LDOS) can be ascribed to two types of bound states. We also show that the LDOS maps for d-SC exhibit bias-energy-dependent checkerboard patterns. These characteristics can serve as signatures of the FFLO states.

cond-mat.supr-con↗

arXiv2006

Thermally and Molecularly Stimulated Relaxation of Hot Phonons in Suspended Carbon Nanotubes

The high-bias electrical transport properties of suspended metallic single-walled carbon nanotubes (SWNTs) are investigated at various temperatures in vacuum, in various gases and when coated with molecular solids. It is revealed that non-equilibrium optical phonon effects in suspended nanotubes decrease as the ambient temperature increases. Gas molecules surrounding suspended SWNTs assist the relaxation of hot phonons and afford enhanced current flow along nanotubes. Molecular solids of carbon dioxide frozen onto suspended SWNTs quench the non-equilibrium phonon effect. The discovery of strong environmental effects on high current transport in nanotubes is important to high performance nanoelectronics applications of 1D nanowires in general.

cond-mat.mes-hall↗

arXiv2005

Thermal Conductance of an Individual Single-Wall Carbon Nanotube above Room Temperature

The thermal properties of a suspended metallic single-wall carbon nanotube (SWNT) are extracted from its high-bias (I-V) electrical characteristics over the 300-800 K temperature range, achieved by Joule self-heating. The thermal conductance is approximately 2.4 nW/K and the thermal conductivity is nearly 3500 W/m/K at room temperature for a SWNT of length 2.6 um and diameter 1.7 nm. A subtle decrease in thermal conductivity steeper than 1/T is observed at the upper end of the temperature range, which is attributed to second order three-phonon scattering between two acoustic modes and one optical mode. We discuss sources of uncertainty and propose a simple analytical model for the SWNT thermal conductivity including length and temperature dependence.

cond-mat.mes-hall↗

arXiv2005

Ultra-High Yield Growth of Vertical Single-Walled Carbon Nanotubes: Hidden Roles of Hydrogen and Oxygen

An oxygen assisted hydrocarbon chemical vapor deposition (CVD) method is developed to afford large-scale highly reproducible ultra high-yield growth of vertical single-walled carbon nanotubes (SWNT). It is revealed that reactive hydrogen (H)-species, inevitable in hydrocarbon-based growth, are damaging to the formation of sp2-like SWNTs. The addition of oxygen scavenges H-species and provides a powerful control over the C/H ratio to favor SWNT growth. The revelation of the roles played by hydrogen and oxygen leads to a unified and universal optimum growth condition for SWNTs. Further, a versatile method is developed to form vertical SWNT films on any substrate, lifting a major substrate-type limitation for aligned SWNTs.

cond-mat.mtrl-sci↗

arXiv2005

Electron Transport in Very Clean, As-Grown Suspended Carbon Nanotubes

Single walled carbon nanotubes (SWNT) have displayed a wealth of quantum transport phenomena thus far. Defect free, unperturbed SWNTs with wellbehaved or tunable metal contacts are important to probing the intrinsic electrical properties of nanotubes. Meeting these conditions experimentally is nontrivial due to numerous disorder and randomizing factors. Here we show that ~ 1 um long fully suspended SWNTs grown-in-place between metal contacts afford SWNT devices exhibiting well-defined characteristics over much wider energy ranges than nanotubes pinned on substrates. Various low temperature transport regimes in true-metallic, small and large bandgap semiconducting nanotubes are observed including quantum states shell-filling, -splitting and -crossing in magnetic fields for medium conductance devices. The clean transport data reveals a correlation between the contact junction resistance and the various transport regimes in SWNT devices. Further, we show that electrical transport data can be used to probe the band structures of nanotubes including nonlinear band dispersion.

cond-mat.mes-hall↗

arXiv2005

Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter

Rhodium (Rh) is found similar to Palladium (Pd) in making near-ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ~ 1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d < ~ 1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors (FETs) and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters < ~ 1.0 nm possibly due to tunnel barriers.

cond-mat.mes-hall↗

arXiv2005

Negative Differential Conductance and Hot Phonons in Suspended Nanotube Molecular Wires

Freely suspended metallic single-wall carbon nanotubes (SWNTs) exhibit reduced current carrying ability compared to those lying on substrates, and striking negative differential conductance (NDC) at low electric fields. Theoretical analysis reveals significant self-heating effects including electron scattering by hot non-equilibrium optical phonons. Electron transport characteristics under strong self-heating are exploited for the first time to probe the thermal conductivity of individual SWNTs (~ 3600 Wm-1K-1 at T=300 K) up to ~700 K, and reveal a 1/T dependence expected for Umklapp phonon scattering at high temperatures.

cond-mat.mes-hall↗

arXiv2005

Temperature and Gas-Environment Dependent Electron and Phonon Transport in Suspended Carbon Nanotubes Up to Electrical Breakdown

High bias electrical transport characteristics of freely suspended metallic single-walled carbon nanotubes (SWNTs) are investigated at 250-400K in vacuum and various gases. Self-heating is exploited to examine the temperature dependence of phonon transport and optical phonon decay in SWNTs. The acoustic phonon thermal conductivity of a SWNT follows ~1/T at high temperatures. Non-equilibrium optical phonon effects in suspended nanotubes decrease as the ambient temperature increases. Gas molecules assist the relaxation of hot optical phonons along the tube length and enable enhanced current flow. In vacuum, high bias breakdown of suspended SWNTs can occur via melting caused by electrically emitted hot optical phonons at a low acoustic phonon temperature.

cond-mat.mes-hall↗

arXiv2004

Suspended Carbon Nanotube Quantum Wires with Two Gates

Suspended single-walled carbon nanotube devices comprised of high quality electrical contacts and two electrostatic gates per device are obtained. Compared to nanotubes pinned on substrates, the suspended devices exhibit little hysteresis related to environmental factors and manifest as cleaner Fabry-Perot interferometers or single electron transistors. The high-field saturation currents in suspended nanotubes related to optical phonon or zone boundary phonon scattering are significantly lower due to the lack of efficient heat sinking. The multiple gate design may also facilitate future investigation of electromechanical properties of nanotube quantum systems.

cond-mat.mes-hall↗

arXiv2004

The Aharonov-Bohm Interference and Beating in Single-Walled Carbon Nanotube Interferometers

Relatively low magnetic fields applied parallel to the axis of a chiral single-walled carbon nanotube are found causing large modulations to the p-channel or valence band conductance of the nanotube in the Fabry-Perot interference regime. Beating in the Aharonov-Bohm type of interference between two field-induced non-degenerate sub-bands of spiraling electrons is responsible for the observed modulation with a pseudo period much smaller than that needed to reach the flux quantum F0 = h/e through the nanotube cross-section. We show that single-walled nanotubes represent the smallest cylinders exhibiting the Aharonov-Bohm effect with rich interference and beating phenomena arising from well-defined molecular orbitals reflective of the nanotube chirality.

cond-mat.mes-hall↗

arXiv2004

10 to 50 nm Long Quasi Ballistic Carbon Nanotube Devices Obtained Without Complex Lithography

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths ~ 10 nm, near the mean free path (mfp) of lop~15 nm for optical phonon scattering, exhibit near-ballistic transport at high biases and can carry unprecedented 100 mA currents per tube. Semiconducting SWCNT field-effect transistors (FETs) with ~ 50 nm channel lengths are routinely produced to achieve quasi-ballistic operations for molecular transistors. The results demonstrate highly length-scaled and high-performance interconnects and transistors realized with SWCNTs.

cond-mat.mtrl-sci↗

arXiv2004

Miniature Organic Transistors With Carbon Nanotubes as Quasi-One Dimensional Electrodes

As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon nanotubes (SWNT) can be used as quasi one-dimensional (1D) electrodes to construct organic field effect transistors (FET) with molecular scale width (~2 nm) and channel length (1-3 nm). An important feature owing to the quasi 1D electrode geometry is the favorable gate electrostatics that allows for efficient switching of ultra-short organic channels. This affords room temperature conductance modulation by orders of magnitude for organic transistors that are only several-molecules in length, with switching characteristics superior to similar devices with lithographically patterned metal electrodes. With nanotubes, covalent carbon-carbon bonds could be utilized to form contacts to molecular materials. The unique geometrical, physical and chemical properties of carbon nanotube electrodes may lead to various interesting molecular devices.

cond-mat.mtrl-sci↗

arXiv2004

Surface Chemistry and Electrical Properties of Germanium Nanowires

Germanium nanowires with p- and n-dopants were synthesized by chemical vapor deposition and used to construct complementary field effect transistors . Electrical transport and x-ray photoelectron spectroscopy data are correlated to glean the effects of Ge surface chemistry to the electrical characteristics of GeNWs. Large hysteresis due to water molecules strongly bound to GeO2 on GeNWs is revealed. Different oxidation behavior and hysteresis characteristics and opposite band bending due to Fermi level pinning by interface states between Ge and surface oxides are observed for p- and n-type GeNWs. Vacuum annealing above 400C is used to remove surface oxides and eliminate hysteresis in GeNW FETs. High-k dielectric HfO2 films grown on clean GeNW surfaces by atomic layer deposition (ALD) using an alkylamide precursor is effective serving as the first layer of surface passivation. Lastly, the depletion length along the radial direction of nanowires is evaluated. The result suggests that surface effects could be dominant over the bulk properties of small diameter wires.

cond-mat.mtrl-sci↗

arXiv2004

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.

cond-mat.other↗