arXiv subjects

Priyanka Sahu

Publications and source records attributed to Priyanka Sahu.

3 recordsLinked to original sources

arXiv2026

A self-compliant selector-free memory with functional bismuth ferrite

In-memory computing requires selector-free operation, low variability, and stable multilevel switching, all of which remain challenging to achieve in a single system. Here, we demonstrate a robust selector-free memory based on a multiferroic BiFeO3 that combines self-compliance with stable bipolar switching, high yield, long endurance, and extended retention. We observe that BiFeO3 memristive crossbar arrays become self-compliant through a naturally formed TiOx interfacial layer, enabling forming-free bipolar switching without external selector devices, addressing major bottlenecks that have limited the practical deployment of resistive memories. The array delivers stable bipolar switching with a 97% device yield, endurance beyond 105 cycles, and data retention exceeding 105 s with low cycle-to-cycle and device-to-device variability. In addition, the devices exhibit 16 well-separated conductance states, enabling 4-bit multilevel operation via precise pulse-controlled programming for digit visualization in edge applications. Noise measurements reveal predominantly 1/f-type behavior with minimal random telegraph noise, indicating robust conductance stability across the programmable window. These results establish BiFeO3 as a practical materials platform for multibit, selector-free crossbar memories offering high reliability, making it well-suited for scalable computing architectures based on functional materials.

cond-mat.mes-hall↗

arXiv2026

Interfacial Charge Transfer Driven Enhanced Transport and Thermal Stability in Graphene-MoS2 Vertical Heterostructure Field-Effect Transistors

In this work, we demonstrate interfacial charge transfer-driven transport enhancement in few-layer graphene monolayer MoS2 vertical heterostructure field-effect transistor. Raman scattering and Raman intensity mapping results confirm the successful stacking of FL graphene on ML MoS2. Pronounced photoluminescence (PL) quenching of MoS2 and spectral redshift in the heterostructure suggest efficient interlayer charge transfer and strong electronic coupling at the vdW interface. Electrical measurements show enhanced drain current, field-effect mobility, and conductivity in Gr-MoS2 device compared to pristine MoS2 transistor with Ag contacts. The energy band considerations under equilibrium and gate bias conditions suggest improved Fermi-level alignment and reduced effective Schottky barrier effects at the graphene-MoS2 interface, enabling efficient carrier injection. Temperature-dependent transport (300-400 K) reveals phonon-dominated mobility and conductivity degradation in both devices; however, the heterostructure exhibits significantly suppressed performance degradation. The mobility enhancement factor increases from ~1.6 at 300 K to ~4.0 at 400 K, accompanied by a corresponding improvement in conductivity stability, demonstrating superior thermal robustness for the Gr-MoS2 heterostructure. The power-law analysis indicates that transport in pristine MoS2 is influenced by both intrinsic phonon scattering and additional thermally activated extrinsic processes such as contact and interfacial effects, whereas the weaker temperature dependence in the Gr-MoS2 device reflects moderated extrinsic contributions and transport behaviour approaching a predominantly phonon-limited regime. These findings demonstrate graphene contact engineering as a viable pathway toward improved performance and thermally stable two-dimensional semiconductor electronics.

cond-mat.mes-hall↗

arXiv2026

Quantum Resistance in Multilayer Graphene-BiFeO3 Memristor for Brain-Inspired Computing

In the era of big data and the Internet of Things, quantum-level control of conductance states offers a promising route toward high-density data storage and brain-inspired neuromorphic computing. Although quantum conductance (QC) phenomena have been demonstrated in various metal oxide memristors, achieving reliable and precise control over quantized states remains in its infancy. Here, we demonstrate bidirectional quantum conductance states in multifunctional BiFeO3 (BFO) perovskite memristors integrated with multilayer-graphene contacts, enabling higher-order tunability and revealing the potential of perovskite-2D heterostructures for quantum-engineered memory and computing devices. XPS analysis provides detailed insights into oxygen vacancy dynamics in BFO, whereas first-principles density functional theory calculations clearly reveal a strong localized electric field at the graphene-BFO interface. Our devices exhibit current-controlled higher-order QC transitions facilitated by quantum point contact formation, giving rise to quantized conductance states during both SET and RESET processes. Time-lag correlation maps quantify the stochastic evolution of QC states under dynamic voltage-pulse tuning schemes. Notably, the quantized conductance states effectively emulate synaptic potentiation and depression, enabling precise weight modulation for high-accuracy image and digit recognition in convolutional neural networks. These findings establish perovskite-2D heterostructures as promising candidates for QC-driven resistive switching and demonstrate their potential for developing controllable quantum memristors.

cond-mat.mes-hall↗