Pratap Kumar Sahoo | arXiv Science

arXiv2026

Interface engineering of spin triplet Cooper pairs for spin-valve implementation

Spin singlet Cooper pairs can be converted into equal-spin triplet pairs at a superconductor/heavy-metal interface under suitable conditions. Under current carrying conditions, these triplet correlations can give rise to a non equilibrium spin moment in the heavy metal through the predicted supercurrent spin-Hall effect. Here we demonstrate that this current induced triplet spin moment, in conjunction with the magnetic moment of a ferromagnetic layer, can enable a magnetic spin-valve response in Nb/Pt/Ni/Pt/Nb vertical nano-devices. The magnitude of this spin-valve effect depends on the efficiency of singlet-triplet Cooper pair conversion at the Nb/Pt interface. In order to facilitate efficient triplet generation, we deliberately introduced interfacial roughness to introduce finite Rashba spin-orbit coupling at the Nb/Pt interface and an out-of-plane component of magnetic moment at the Ni interface. In contrast, no discernible spin-valve response was observed in devices with smooth interfaces within measurement resolutions. Since the magnetic moment of the Ni layer and the current-induced triplet spin moment in the Pt layer are independently switchable using a magnetic field and bias current, respectively, the spin valve can be controlled via either parameters. These results demonstrates a novel approach to directly utilizing the spin polarized triplet Copper pairs in superconducting spintronic applications.

cond-mat.supr-con↗

arXiv2024

Unveiling the Reactivity of Oxygen and Ozone on C2N Monolayer: A First-Principles Study

The process of environmental oxidation is pivotal in determining the physical and chemical properties of two-dimensional (2D) materials. Its impact holds great significance for the practical application of these materials in nanoscale devices functioning under ambient conditions. This study delves into the influence of O2 and O3 exposure on the structural and electronic characteristics of the C2N monolayer, focusing on the kinetics of adsorption and dissociation reactions. Employing first-principles density functional theory calculations alongside climbing image nudged elastic band calculations, we observe that the C2N monolayer exhibits resistance to oxidation and ozonation, evidenced by energy barriers of 0.05 eV and 0.56 eV, respectively. These processes are accompanied by the formation of epoxide (C-O-C) groups. Furthermore, the dissociation mechanism involves charge transfers from the monolayer to the molecules. Notably, the dissociated configurations demonstrate higher bandgaps compared to the pristine C2N monolayer, attributed to robust C-O hybridization. These findings suggest the robustness of C2N monolayers against oxygen/ozone exposures, ensuring stability for devices incorporating these materials.

cond-mat.mtrl-sci↗