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Philipp Ritzinger

Publications and source records attributed to Philipp Ritzinger.

10 recordsLinked to original sources

Electrical and thermal magnetotransport in altermagnetic CrSb

Chromium antimonide has emerged as a key material platform for studying altermagnetism because of its simple binary composition, high N\'eel temperature, and semimetallic electronic structure. Here, we investigate electrical and thermal magnetotransport in single-crystalline CrSb using steady-and pulsed-magnetic fields up to 65 T, and complement these measurements with neutron diffraction and magnetization data. We confirm the compensated magnetic structure and observe a large nonsaturating magnetoresistance together with a pronounced nonlinear Hall response at low temperatures. Multicarrier modeling, supported by mobility-spectrum analysis, reveals coexisting electron- and hole-like charge carriers with mobilities up to ~3000 cm2/Vs and shows that the number of transport channels that can be resolved strongly depends on the accessible magnetic-field range. Thermal-transport measurements further reveal a nonlinear thermal Hall response and a thermal conductivity substantially exceeding a simple Wiedemann-Franz law. The broadly similar field and temperature evolution of electrical and thermal transport point to a dominant electronic contribution, while the remaining deviations indicate additional heat-carrying channels.

cond-mat.mtrl-sci

Room-temperature antiferromagnetic resonance in NaMnAs

We report on antiferromagnetic resonance experiments in bulk tetragonal NaMnAs -- a room-temperature antiferromagnetic semiconductor. Our results corroborate previous ab initio studies, which propose that NaMnAs is an easy-axis antiferromagnet with the N\'eel vector oriented along the tetragonal axis. At $ B = 0 $, we find a single antiferromagnetic resonance line at 7 meV and associate it with a doubly degenerate ($ k = 0 $) magnon mode. Its energy softens considerably with increasing $ T $, but remains clearly visible in the data up to room temperature. From the experimental data, we estimate the single-ion anisotropy of the Mn ions in NaMnAs in the range 0.1-0.2 meV, a value that is relatively large compared to other manganese-based antiferromagnets.

cond-mat.mtrl-sci

Non-Relativistic Anisotropic Magnetoresistance with Collinear and Non-Collinear Magnetic Order

Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that a comparable symmetry lowering can also occur in a non-relativistic limit. Using tight-binding models, density functional theory calculations, and Boltzmann transport theory, we investigate systems with multiple magnetic sublattices, including both collinear and non-collinear antiferromagnets, as well as ferrimagnetic configurations. We show that AMR and related anisotropies can emerge purely from magnetic order, without the need for SOC, and may reach significant magnitudes. The findings are supported by case studies on toy-model lattices and real materials such as MnN, Mn$_3$Sn, and are further interpreted using a symmetry analysis based on Neumann's principle. Material candidates that exhibit non-relativistic anisotropic magnetoresistance are identified by symmetry analysis applied to entries in the MAGNDATA database.

cond-mat.mtrl-sci

Anisotropic magnetoresistance in altermagnetic MnTe

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order.

cond-mat.mtrl-sci

Non-relativistic torque and Edelstein effect in noncollinear magnets

The Edelstein effect is the origin of the spin-orbit torque: a current-induced torque that is used for the electrical control of ferromagnetic and antiferromagnetic materials. This effect originates from the relativistic spin-orbit coupling, which necessitates utilizing materials with heavy elements. Here we show that in magnetic materials with non-collinear magnetic order, the Edelstein effect and consequently also a current-induced torque can exist even in the absence of the spin-orbit coupling. Using group symmetry analysis, model calculations, and realistic simulations on selected compounds, we identify large classes of non-collinear magnet candidates and demonstrate that the current-driven torque is of similar magnitude as the celebrated spin-orbit torque in conventional transition metal structures. We also show that this torque can exist in an insulating material, which could allow for highly efficient electrical control of magnetic order.

cond-mat.mtrl-sci

Anisotropic magnetoresistance: materials, models and applications

Resistance of certain (conductive and otherwise isotropic) ferromagnets turns out to exhibit anisotropy with respect to the direction of magnetisation: R$_\parallel$ different from R$_\perp$ with reference to the electric current direction. This century-old phenomenon is reviewed both from the perspective of materials and physical mechanisms involved. More recently, this effect has also been extended to antiferromagnets. This opens the possibility for industrial applications reaching far beyond the current ones, e.g. hard drive read heads or position sensors.

cond-mat.mtrl-sci

Field-induced reorientation of helimagnetic order in Cu$_2$OSeO$_3$ probed by magnetic force microscopy

Cu$_2$OSeO$_3$ is an insulating skyrmion-host material with a magnetoelectric coupling giving rise to an electric polarization with a characteristic dependence on the magnetic field $\vec H$. We report magnetic force microscopy imaging of the helical real-space spin structure on the surface of a bulk single crystal of Cu$_2$OSeO$_3$. In the presence of a magnetic field, the helimagnetic order in general reorients and acquires a homogeneous component of the magnetization, resulting in a conical arrangement at larger fields. We investigate this reorientation process at a temperature of 10~K for fields close to the crystallographic $\langle 110\rangle$ direction that involves a phase transition at $H_{c1}$. Experimental evidence is presented for the formation of magnetic domains in real space as well as for the microscopic origin of relaxation events that accompany the reorientation process. In addition, the electric polarization is measured by means of Kelvin-probe force microscopy. We show that the characteristic field dependency of the electric polarization originates in this helimagnetic reorientation process. Our experimental results are well described by an effective Landau theory previously invoked for MnSi, that captures the competition between magnetocrystalline anisotropies and Zeeman energy.

cond-mat.mtrl-sci

Macroscopic time reversal symmetry breaking by staggered spin-momentum interaction

Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Anisotropic electron interactions, on the other hand, have been a domain of correlated quantum phases, such as the T-invariant nematics or unconventional superconductors. Here we report discovery of a broken-T phase of itinerant Bloch electrons with an unconventional anisotropic spin-momentum interaction, whose staggered nature leads to the formation of two ferromagnetic-like valleys in the momentum space with opposite spin splittings. We describe qualitatively the effect by deriving a non-relativistic single-particle Hamiltonian model. Next, we identify the unconventional staggered spin-momentum interaction by first-principles electronic structure calculations in a four-sublattice antiferromagnet Mn5Si3 with a collinear checkerboard magnetic order. We show that the staggered spin-momentum interaction is set by nonrelativistic spin-symmetries which were previously omitted in relativistic physics classifications of spin interactions and topological quasiparticles. Our measurements of a spontaneous Hall effect in epilayers of antiferromagnetic Mn5Si3 with vanishing magnetization are consistent with our theory predictions. Bloch electrons with the unconventional staggered spin interaction, compatible with abundant low atomic-number materials, strong spin-coherence, and collinear antiferromagnetic order open unparalleled possibilities for realizing T-symmetry broken spin and topological quantum phases.

cond-mat.mes-hall

Anisotropic magneto-thermal transport in Co$_2$MnGa thin films

Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by free energy minimisation within the Stoner-Wohlfarth formalism and conclude that both crystalline and non-crystalline components of this magneto-transport phenomenon are present in Co$_2$MnGa. Unlike the AMR which is small in relative terms, the AMTP is large due to a change of sign of the Seebeck coefficient as a function of temperature. This fact is discussed in the context of the Mott rule and further analysis of AMTP components is presented.

cond-mat.mtrl-sci

Thickness dependence of the anomalous Nernst effect and the Mott relation of Weyl-semimetal Co2MnGa thin films

We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.

cond-mat.mes-hall