arXiv subjects

Peter Jacobson

Publications and source records attributed to Peter Jacobson.

10 recordsLinked to original sources

arXiv2026

Reducing TLS loss in tantalum CPW resonators using titanium sacrificial layers

We demonstrate a substantial reduction in two-level system loss in tantalum coplanar waveguide resonators fabricated on high-resistivity silicon substrates through the use of an ultrathin titanium sacrificial layer. A 0.2nm titanium film, deposited atop pre-sputtered {\alpha}-tantalum, acts as a solid-state oxygen getter that chemically modifies the native Ta oxide at the metal-air interface. After device fabrication, the titanium layer is removed using buffered oxide etchant, leaving behind a chemically reduced Ta oxide surface. Subsequent high-vacuum annealing further suppresses two-level system loss. Resonators treated with this process exhibit internal quality factors Qi exceeding an average of 1.5 million in the single-photon regime across ten devices, over three times higher than otherwise identical devices lacking the titanium layer. These results highlight the critical role of interfacial oxide chemistry in superconducting loss and reinforce atomic-scale surface engineering as an effective approach to improving coherence in tantalum-based quantum circuits. The method is compatible with existing fabrication workflows applicable to tantalum films, offering a practical route to further extending T1 lifetimes in superconducting qubits.

quant-ph↗

arXiv2024

Superconductivity in Substitutional Ga-Hyperdoped Ge Epitaxial Thin Films

Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group III atoms into C, Si, or Ge can yield superconductivity; however, its origin is obscured by structural disorder and dopant clustering. Here, we report the epitaxial growth of hyperdoped Ga:Ge films and trilayer heterostructures by molecular beam epitaxy with extreme hole concentrations ($n_\textup{h} = 4.15 \times 10^{21}$~cm$^{-3}$, ~17.9\% Ga substitution) that yield superconductivity with a critical temperature of $T_{\textup{c}} = 3.5$~K and an out-of-plane critical field of 1~T at 270~mK. Synchrotron-based X-ray absorption and scattering methods reveal that Ga dopants are substitutionally incorporated within the Ge lattice, introducing a tetragonal distortion to the crystal unit cell. Our findings, corroborated by first-principles calculations, suggest that the structural order of Ga dopants creates a narrow band for the emergence of superconductivity in Ge, establishing hyperdoped Ga:Ge as a low-disorder, epitaxial superconductor-semiconductor platform.

cond-mat.mes-hall↗

arXiv2023

Near-field localization of the boson peak on tantalum films for superconducting quantum devices

Superconducting circuits are among the most advanced quantum computing technologies, however their performance is currently limited by losses found in surface oxides and disordered materials. Here, we identify and spatially localize a near-field signature of loss centers on tantalum films using terahertz scattering-type scanning near-field optical microscopy (s-SNOM). Making use of terahertz nanospectroscopy, we observe a localized excess vibrational mode around 0.5 THz and identify this resonance as the boson peak, a signature of amorphous materials. Grazing-incidence wide-angle x-ray scattering (GIWAXS) shows that oxides on freshly solvent-cleaned samples are amorphous, whereas crystalline phases emerge after aging in air. By localizing defect centers at the nanoscale, our characterization techniques and results will inform the optimization of fabrication procedures for new low-loss superconducting circuits.

cond-mat.mes-hall↗

arXiv2022

Ternary Metal Oxide Substrates for Superconducting Circuits

Substrate material imperfections and surface losses are one of the major factors limiting superconducting quantum circuitry from reaching the scale and complexity required to build a practicable quantum computer. One potential path towards higher coherence of superconducting quantum devices is to explore new substrate materials with a reduced density of imperfections due to inherently different surface chemistries. Here, we examine two ternary metal oxide materials, spinel (MgAl2O4) and lanthanum aluminate (LaAlO3), with a focus on surface and interface characterization and preparation. Devices fabricated on LaAlO3 have quality factors three times higher than earlier devices, which we attribute to a reduction in interfacial disorder. MgAl2O4 is a new material in the realm of superconducting quantum devices and, even in the presence of significant surface disorder, consistently outperforms LaAlO3. Our results highlight the importance of materials exploration, substrate preparation, and characterization to identify materials suitable for high-performance superconducting quantum circuitry.

cond-mat.supr-con↗

arXiv2021

Terahertz nanospectroscopy of plasmon polaritons for the evaluation of doping in quantum devices

Terahertz (THz) waves are a highly sensitive probe of free carrier concentrations in semiconducting materials. However, most experiments operate in the far-field, which precludes the observation of nanoscale features that affect the material response. Here, we demonstrate the use of nanoscale THz plasmon polaritons as an indicator of surface quality in prototypical quantum devices properties. Using THz near-field hyperspectral measurements, we observe polaritonic features in doped silicon near a metal-semiconductor interface. The presence of the THz surface plasmon polariton indicates the existence of a thin film doped layer on the device. Using a multilayer extraction procedure utilising vector calibration, we quantitatively probe the doped surface layer and determine its thickness and complex permittivity. The recovered multilayer characteristics match the dielectric conditions necessary to support the THz surface plasmon polariton. Applying these findings to superconducting resonators, we show that etching of this doped layer leads to an increase of the quality factor as determined by cryogenic measurements. This study demonstrates that THz scattering-type scanning near-field optical microscopy (s-SNOM) is a promising diagnostic tool for characterization of surface dielectric properties of quantum devices.

physics.optics↗

arXiv2021

Near-Field Terahertz Nanoscopy of Coplanar Microwave Resonators

Superconducting quantum circuits are one of the leading quantum computing platforms. To advance superconducting quantum computing to a point of practical importance, it is critical to identify and address material imperfections that lead to decoherence. Here, we use terahertz Scanning Near-field Optical Microscopy (SNOM) to probe the local dielectric properties and carrier concentrations of wet-etched aluminum resonators on silicon, one of the most characteristic components of the superconducting quantum processors. Using a recently developed vector calibration technique, we extract the THz permittivity from spectroscopy in proximity to the microwave feedline. Fitting the extracted permittivity to the Drude model, we find that silicon in the etched channel has a carrier concentration greater than buffer oxide etched silicon and we explore post-processing methods to reduce the carrier concentrations. Our results show that near-field THz investigations can be applied to quantitatively evaluate and identify potential loss channels in quantum devices.

cond-mat.mes-hall↗

arXiv2018

Bulk and surface characterization of In$_2$O$_3$(001) single crystals

A comprehensive bulk and surface investigation of high-quality In$_2$O$_3$(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry (ICP-MS) reveals small residues of Pb, Mg, and Pt in the crystals. Four-point-probe measurements show a resistivity of 2.0 $\pm$ 0.5 $\times$ 10$^5$ {\Omega} cm, which translates into a carrier concentration of $\approx$10$^{12}$ cm$^{-3}$. The results from x-ray diffraction (XRD) measurements revise the lattice constant to 10.1150(5) {\AA} from the previously accepted value of 10.117 {\AA}. Scanning tunneling microscopy (STM) images of a reduced (sputtered/annealed) and oxidized (exposure to atomic oxygen at 300 {\deg}C) surface show a step height of 5 {\AA}, which indicates a preference for one type of surface termination. The surfaces stay flat without any evidence for macroscopic faceting under any of these preparation conditions. A combination of low-energy ion scattering (LEIS) and atomically resolved STM indicates an indium-terminated surface with small islands of 2.5 {\AA} height under reducing conditions, with a surface structure corresponding to a strongly distorted indium lattice. Scanning tunneling spectroscopy (STS) reveals a pronounced surface state at the Fermi level ($E_F$). Photoelectron spectroscopy (PES) shows additional, deep-lying band gap states, which can be removed by exposure of the surface to atomic oxygen. Oxidation also results in a shoulder at the O 1s core level at a higher binding energy, possibly indicative of a surface peroxide species. A downward band bending of 0.4 eV is observed for the reduced surface, while the band bending of the oxidized surface is of the order of 0.1 eV or less.

cond-mat.mtrl-sci↗

arXiv2016

Potential Energy Driven Spin Manipulation via a Controllable Hydrogen Ligand

Spin-bearing molecules can be stabilized on surfaces and in junctions with desirable properties such as a net spin that can be adjusted by external stimuli. Using scanning probes, initial and final spin states can be deduced from topographic or spectroscopic data, but how the system transitioned between these states is largely unknown. Here we address this question by manipulating the total spin of magnetic cobalt hydride complexes on a corrugated boron nitride surface with a hydrogen- functionalized scanning probe tip by simultaneously tracking force and conductance. When the additional hydrogen ligand is brought close to the cobalt monohydride, switching between a corre- lated S = 1 /2 Kondo state, where host electrons screen the magnetic moment, and a S = 1 state with magnetocrystalline anisotropy is observed. We show that the total spin changes when the system is transferred onto a new potential energy surface defined by the position of the hydrogen in the junction. These results show how and why chemically functionalized tips are an effective tool to manipulate adatoms and molecules, and a promising new method to selectively tune spin systems.

cond-mat.mes-hall↗

arXiv2016

Correlation Driven Transport Asymmetries Through Coupled Spins

Correlation is a fundamental statistical measure of order in interacting quantum systems. In solids, electron correlations govern a diverse array of material classes and phenomena such as heavy fermion compounds, Hunds metals, high-Tc superconductors, and the Kondo effect. Spin-spin correlations, notably investigated by Kaufman and Onsager in the 1940s 6, are at the foundation of numerous theoretical models but are challenging to measure experimentally. Reciprocal space methods can map correlations, but at the single atom limit new experimental probes are needed. Here, we determine the correlations between a strongly hybridized spin impurity and its electron bath by varying the coupling to a second magnetic impurity in the junction of a scanning tunneling microscope. Electronic transport through these coupled spins reveals an asymmetry in the differential conductance reminiscent of spin-polarized transport in a magnetic field. We show that at zero field, this asymmetry can be controlled by the coupling strength and is directly related to either ferromagnetic (FM) or antiferromagnetic (AFM) spin-spin correlations.

cond-mat.mes-hall↗

arXiv2015

Quantum Engineering of Spin and Anisotropy in Magnetic Molecular Junctions

Single molecule magnets and single spin centers can be individually addressed when coupled to contacts forming an electrical junction. In order to control and engineer the magnetism of quantum devices, it is necessary to quantify how the structural and chemical environment of the junction affects the spin center. Metrics such as coordination number or symmetry provide a simple method to quantify the local environment, but neglect the many-body interactions of an impurity spin when coupled to contacts. Here, we utilize a highly corrugated hexagonal boron nitride (h-BN) monolayer to mediate the coupling between a cobalt spin in CoHx (x=1,2) complexes and the metal contact. While the hydrogen atoms control the total effective spin, the corrugation is found to smoothly tune the Kondo exchange interaction between the spin and the underlying metal. Using scanning tunneling microscopy and spectroscopy together with numerical simulations, we quantitatively demonstrate how the Kondo exchange interaction mimics chemical tailoring and changes the magnetic anisotropy.

cond-mat.mes-hall↗