arXiv subjects

Peter Grutter

Publications and source records attributed to Peter Grutter.

At least 19 recordsLinked to original sources

arXiv2026

Mapping the Growth of Two-Dimensional $\pi$-Conjugated Polymers on Au(111): Organometallic Intermediates and Edge Terminations

Kagome lattices provide an exciting space for the exploration of graphene-like $\pi$-conjugated molecular systems with flat bands. Using heterotriangulene-derived precursors, along with an on-surface Ullmann coupling process, makes growing polymers with Kagome lattices accessible and straightforward. Here, we use scanning tunneling microscopy alongside high-resolution atomic force microscopy to examine the evolution of tribromotrioxaazatriangulene on Au(111) into ordered, covalent films. Using density functional theory and scanning probe methods, we find previously unreported organometallic intermediate states involving Au adatoms incorporated within the growing polymer lattice. We also find that a majority of polymer edges remain brominated up to 250 $^{\circ}$C and a large number of edges bonded to Au adatoms coordinated to an adjacent bromine atom. These observations suggest that residual bromine could play a role in stabilizing the polymer edges to Au adatoms and thereby influence the growth pathways that lead to ordered Kagome polymer lattices.

cond-mat.mtrl-sci↗

arXiv2025

Probing Electrocatalytic Gas Evolution Reaction at Pt by Force Noise Measurements. Part 2. Oxygen

Understanding O2 bubble nucleation and growth during the oxygen evolution reaction (OER) is crucial to comprehend their influences on catalytically active sites in the process. To achieve this goal, mapping the spatial variation of nanoscale dynamic individual steps at the electrocatalytic interfaces is vital, as it further enables a detailed understanding of the mechanism of the process. Here, we combined tapping mode AFM imaging with a Pt ultramicroelectrode to investigate oxygen bubble nucleation, growth, and detachment. Our AFM feedback error signal and topography data reveal that bubbles of O2 gas nucleate at the step edge sites and interact with the catalytically active sites. This interaction between primary catalytic sites and bubble nucleation sites is the primary reason for a decrease in the current density at a given high overpotential of the OER. Our findings advance the understanding of the complexity of phenomena involved in gas evolution on catalytic surfaces.

cond-mat.mes-hall↗

arXiv2025

afspm: A Framework for Manufacturer-Agnostic Automation in Scanning Probe Microscopy

Scanning probe microscopy (SPM) is a valuable technique by which one can investigate the physical characteristics of the surfaces of materials. However, its widespread use is hampered by the time-consuming nature of running an experiment and the significant domain knowledge required. Recent studies have shown the value of multiple forms of automation in improving this, but their use is limited due to the difficulty of integrating them with SPMs other than the one it was developed for. With this in mind, we propose an automation framework for SPMs aimed toward facilitating code sharing and reusability of developed components. Our framework defines generic control and data structure schemas which are passed among independent software processes (components), with the final SPM commands sent after passing through an SPM-specific translator. This approach permits multi-language support and allows for experimental components to be decoupled among multiple computers. Our mediation logic limits access to the SPM to a single component at a time, with a simple override mechanism in order to correct detected experiment problems. To validate our proposal, we integrated and tested it with two SPMs from separate manufacturers, and ran an experiment involving a thermal drift correction component.

physics.ins-det↗

arXiv2025

Probing Electrocatalytic Gas Evolution Reaction at Pt by Force Noise Measurements. Part 1-Hydrogen

Electrocatalytic processes occurring at the heterogeneous interface are complex and their understanding at the molecular level remains challenging. Atomic force microscope (AFM) can detect force interactions down to the atomic level, but so far it has been mainly used to obtain in-situ images of electrocatalysts. Here for the first time, we employ AFM to investigate gas evolution at a platinum ultramicroelectrode (Pt UME) under electrochemical conditions using the force noise method. We detect excess force noise when the individual H2 gas bubble nucleation, growth, and detachment events occur at the Pt UME. The excess noise varies linearly with the applied potential on a semi-log plot. Chronoamperometry current fluctuations indicate that the H2 gas bubble radius increases from 1 to 10 micrometers and the AFM deflection signal measurements indicate that the mean H2 bubble radius is 321 micrometers. These two values point to the coalescence of small bubbles generated at the Pt UME interface. The contribution reports an innovative method to probe the gas bubble dynamics at the heterogenous interface under electrochemical conditions with high sensitivity.

cond-mat.mes-hall↗

arXiv2024

Needle in a haystack: efficiently finding atomically defined quantum dots for electrostatic force microscopy

The ongoing development of single electron, nano and atomic scale semiconductor devices would benefit greatly from a characterization tool capable of detecting single electron charging events with high spatial resolution, at low temperature. In this work, we introduce a novel Atomic Force Microscope (AFM) instrument capable of measuring critical device dimensions, surface roughness, electrical surface potential, and ultimately the energy levels of quantum dots and single electron transistors in ultra miniaturized semiconductor devices. Characterization of nanofabricated devices with this type of instrument presents a challenge: finding the device. We therefore also present a process to efficiently find a nanometre size quantum dot buried in a $10 \times 10~\text{mm}^2$ silicon sample using a combination of optical positioning, capacitive sensors and AFM topography in vacuum.

cond-mat.mes-hall↗

arXiv2024

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemble, they give rise to a $1/f$ power spectral trend. Such individual defect fluctuations at the Si/SiO$_2$ interface impair the performance and reliability of nanoscale semiconductor devices, and will be a significant source of noise in semiconductor-based quantum sensors and computers. The fluctuations measured here are associated with a four-fold competition of rates, including slow two-state switching on the order of seconds and, in one state, fast switching on the order of nanoseconds which is associated with energy loss.

cond-mat.mes-hall↗

arXiv2020

Charge carrier inversion in a doped thin film organic semiconductor island

Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes for successful operation. In recent years, a major milestone was reached: an OFET was made to successfully operate in the inversion-mode for the first time. Here, we develop a pulsed bias technique to characterize the dopant type of any organic material system, without prior knowledge or characterization of the material in question. We use this technique on a pentacene/PTCDI heterostructure and thus deduce that pentacene is n-doped by impurities. Additionally, through tip-induced band-bending, we generate inversion, depletion, and accumulation regimes over a 20~nm radius, three monolayer thick n-doped pentacene island. Our findings demonstrate that nanometer-scale lateral extent and thickness are sufficient for an OFET device to operate in the inversion regime.

cond-mat.mes-hall↗

arXiv2020

Direct Imaging, Three-dimensional Interaction Spectroscopy, and Friction Anisotropy of Atomic-scale Ripples on MoS$_{2}$

Theory predicts that two-dimensional (2D) materials may only exist in the presence of out-ofplane deformations on atomic length scales, frequently referred to as ripples. While such ripples can be detected via electron microscopy, their direct observation via surface-based techniques and characterization in terms of interaction forces and energies remain limited, preventing an unambiguous study of their effect on mechanical characteristics, including but not limited to friction anisotropy. Here, we employ high-resolution atomic force microscopy to demonstrate the presence of atomic-scale ripples on supported samples of few-layer molybdenum disulfide (MoS$_{2}$). Three-dimensional force / energy spectroscopy is utilized to study the effect of ripples on the interaction landscape. Friction force microscopy reveals multiple symmetries for friction anisotropy, explained by studying rippled sample areas as a function of scan size. Our experiments contribute to the continuing development of a rigorous understanding of the nanoscale mechanics of 2D materials.

physics.app-ph↗

arXiv2019

Growth and Elasticity of Mechanically-Created Neurites

Working in the framework of morphoelasticity, we develop a model of neurite growth in response to elastic deformation. We decompose the applied stretch into an elastic component and a growth component, and adopt an observationally-motivated model for the growth law. We then compute the best-fit model parameters by fitting to force-extension curves from measurements of constant-speed uniaxial deformations of mechanically-induced neurites of rat hippocampal neurons. We find a time constant for the growth law of 0.009~s$^{-1}$, similar to the diffusion rate of actin in a cell. Our results characterize the kinematics of neurite growth and establish new limits on the growth rate of neurites.

physics.bio-ph↗

arXiv2019

Optical excitation of atomic force microscopy cantilever for accurate spectroscopic measurements

Reliable operation of frequency modulation mode atomic force microscopy (FM-AFM) depends on a clean resonance of an AFM cantilever. It is recognized that the spurious mechanical resonances which originate from various mechanical components in the microscope body are excited by a piezoelectric element that is intended for exciting the AFM cantilever oscillation and these spurious resonance modes cause the serious undesirable signal artifacts in both frequency shift and dissipation signals. We present an experimental setup to excite only the oscillation of the AFM cantilever in a fiber-optic interferometer system using optical excitation force. While the optical excitation force is provided by a separate laser light source with a different wavelength (excitation laser : {\lambda} = 1310 nm), the excitation laser light is still guided through the same single-mode optical fiber that guides the laser light (detection laser : {\lambda} = 1550 nm) used for the interferometric detection of the cantilever deflection. We present the details of the instrumentation and its performance. This setup allows us to eliminate the problems associated with the spurious mechanical resonances such as the apparent dissipation signal and the inaccuracy in the resonance frequency measurement.

cond-mat.mes-hall↗

arXiv2019

Nanopore fabrication via tip-controlled local breakdown using an atomic force microscope

The dielectric breakdown approach for forming nanopores has greatly accelerated the pace of research in solid-state nanopore sensing, enabling inexpensive formation of nanopores via a bench top setup. Here we demonstrate the potential of tip controlled dielectric breakdown (TCLB) to fabricate pores 100$\times$ faster, with high scalability and nanometre positioning precision. A conductive atomic force microscope (AFM) tip is brought into contact with a nitride membrane positioned above an electrolyte reservoir. Application of a voltage pulse at the tip leads to the formation of a single nanoscale pore. Pores are formed precisely at the tip position with a complete suppression of multiple pore formation. In addition, our approach greatly accelerates the electric breakdown process, leading to an average pore fabrication time on the order of 10 ms, at least 2 orders of magnitude shorter than achieved by classic dielectric breakdown approaches. With this fast pore writing speed we can fabricate over 300 pores in half an hour on the same membrane.

physics.bio-ph↗

arXiv2018

Eliminating the effect of acoustic noise on cantilever spring constant calibration

A common use for atomic force microscopy is to quantify local forces through tip-sample interactions between the probe tip and a sample surface. The accuracy of these measurements depends on the accuracy to which the cantilever spring constant is known. Recent work has demonstrated that the measured spring constant of a cantilever can vary up to a factor of two, even for the exact same cantilever measured by different users on different microscopes. Here we demonstrate that a standard method for calibrating the spring constant (using the oscillations due to thermal energy) is susceptible to ambient noise, which can alter the result significantly. We demonstrate a new step-by-step method to measure the spring constant by actively driving the cantilever to measure the resonance frequency and quality factor, giving results that are unaffected by acoustic noise. Our method can be performed rapidly on any atomic force microscope without any expensive additional hardware.

cond-mat.mes-hall↗

arXiv2018

Calibration of the oscillation amplitude of electrically excited scanning probe microscopy sensors

Atomic force microscopy (AFM) is an analytical surface characterization tool which can reveal a sample's topography with high spatial resolution while simultaneously probing tip-sample interactions. Local measurement of chemical properties with high-resolution has gained much popularity in recent years with advances in dynamic AFM methodologies. A calibration factor is required to convert the electrical readout to a mechanical oscillation amplitude in order to extract quantitative information about the surface. We propose a new calibration technique for the oscillation amplitude of electrically driven probes, which is based on measuring the electrical energy input to maintain the oscillation amplitude constant. We demonstrate the application of the new technique with quartz tuning fork including the qPlus configuration, while the same principle can be applied to other piezoelectric resonators such as length extension resonators, or piezoelectric cantilevers. The calibration factor obtained by this technique is found to be in agreement with using thermal noise spectrum method for capsulated, decapsulated tuning forks and tuning forks in the qPlus configuration.

physics.app-ph↗

arXiv2017

Dissipation modulated Kelvin probe force microscopy method

We review a new implementation of Kelvin probe force microscopy (KPFM) in which the dissipation signal of frequency modulation atomic force microscopy (FM-AFM) is used for dc bias voltage feedback (D-KPFM). The dissipation arises from an oscillating electrostatic force that is coherent with the tip oscillation, which is caused by applying the ac voltage between the tip and sample. The magnitude of the externally induced dissipation is found to be proportional to the effective dc bias voltage, which is the difference between the applied dc voltage and the contact potential difference. Two different implementations of D-KPFM are presented. In the first implementation, the frequency of the applied ac voltage, $f_\mathrm{el}$, is chosen to be the same as the tip oscillation ($f_\mathrm{el} = f_\mathrm{m}$: $1\omega$D-KPFM). In the second one, the ac voltage frequency, $f_\mathrm{el}$, is chosen to be twice the tip oscillation frequency ($f_\mathrm{el}= 2 f_\mathrm{m}$: $2\omega$D-KPFM). In $1\omega$D-KPFM, the dissipation is proportional to the electrostatic force, which enables the use of a small ac voltage amplitude even down to $\approx 10$\,mV. In $2\omega$D-KPFM, the dissipation is proportional to the electrostatic force gradient, which results in the same potential contrast as that obtained by FM-KPFM. D-KPFM features a simple implementation with no lock-in amplifier and faster scanning as it requires no low frequency modulation. The use of a small ac voltage amplitude in $1\omega$D-KPFM is of great importance in characterizing of technically relevant materials in which their electrical properties can be disturbed by the applied electric field. $2\omega$D-KPFM is useful when more accurate potential measurement is required. The operations in $1\omega$ and $2\omega$D-KPFM can be switched easily to take advantage of both features at the same location on a sample.

cond-mat.mes-hall↗

arXiv2017

Force-gradient sensitive Kelvin probe force microscopy by dissipative electrostatic force modulation

We report a Kelvin probe force microscopy (KPFM) implementation using the dissipation signal of a frequency modulation atomic force microscopy that is capable of detecting the gradient of electrostatic force rather than electrostatic force. It features a simple implementation and faster scanning as it requires no low frequency modulation. We show that applying a coherent ac voltage with two times the cantilever oscillation frequency induces the dissipation signal proportional to the electrostatic force gradient which depends on the effective dc bias voltage including the contact potential difference. We demonstrate the KPFM images of a MoS$_2$ flake taken with the present method is in quantitative agreement with that taken with the frequency modulated Kelvin probe force microscopy technique.

cond-mat.mes-hall↗

arXiv2016

Quantum state readout of individual quantum dots by electrostatic force detection

Electric charge detection by atomic force microscopy (AFM) with single- electron resolution (e-EFM) is a promising way to investigate the electronic level structure of individual quantum dots (QD). The oscillating AFM tip modulates the energy of the QDs, causing single electrons to tunnel between QDs and an electrode. The resulting oscillating electrostatic force changes the resonant frequency and damping of the AFM cantilever, enabling electrometry with a single-electron sensitivity. Quantitative electronic level spectroscopy is possible by sweeping the bias voltage. Charge stability diagram can be obtained by scanning the AFM tip around the QD. e-EFM technique enables to investigate individual colloidal nanoparticles and self- assembled QDs without nanoscale electrodes. e-EFM is a quantum electromechanical system where the back-action of a tunneling electron is detected by AFM; it can also be considered as a mechanical analog of admittance spectroscopy with a radio frequency resonator, which is emerging as a promising tool for quantum state readout for quantum computing. In combination with the topography imaging capability of the AFM, e-EFM is a powerful tool for investigating new nanoscale material systems which can be used as quantum bits.

cond-mat.mes-hall↗

arXiv2016

The lower limit for time resolution in frequency modulation atomic force microscopy

Atomic force microscopy (AFM) routinely achieves structural information in the sub-nm length scale. Measuring time resolved properties on this length scale to understand kinetics at the nm scale remains an elusive goal. We present a general analysis of the lower limit for time resolution in AFM. Our finding suggests the time resolution in AFM is ultimately limited by the well-known thermal limit of AFM and not as often proposed by the mechanical response time of the force sensing cantilever. We demonstrate a general pump-probe approach using the cantilever as a detector responding to the averaged signal. This method can be applied to any excitation signal such as electrical, thermal, magnetic or optical. Experimental implementation of this method allows us to measure a photocarrier decay time of ~1 ps in low temperature grown GaAs using a cantilever with a resonance frequency of 280 kHz.

cond-mat.mes-hall↗

arXiv2015

Kelvin probe force microscopy by direct dissipative electrostatic force modulation

We report a new experimental technique for Kelvin probe force microscopy (KPFM) using the dissipation signal of frequency modulation atomic force microscopy for bias voltage feedback. It features a simple implementation and faster scanning as it requires no low frequency modulation. The dissipation is caused by the oscillating electrostatic force that is coherent with the tip oscillation, which is induced by a sinusoidally oscillating voltage applied between the tip and sample. We analyzed the effect of the phase of the oscillating force on the frequency shift and dissipation and found that the relative phase of 90$^\circ$ that causes only the dissipation is the most appropriate for KPFM measurements. The present technique requires a significantly smaller ac voltage amplitude by virtue of enhanced force detection due to the resonance enhancement and the use of fundamental flexural mode oscillation for electrostatic force detection. This feature will be of great importance in the electrical characterizations of technically relevant materials whose electrical properties are influenced by the externally applied electric field as is the case in semiconductor electronic devices.

cond-mat.mes-hall↗