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Pericles Philippopoulos

Publications and source records attributed to Pericles Philippopoulos.

11 recordsLinked to original sources
arXiv2026

Quantum-Device Simulation of Optical Decoherence of Hole-Spin Qubits in Self-Assembled Quantum Dots

Spin-photon interfaces are essential for communications between distant spin qubits in quantum technologies, but the interband optical excitation can also damp electrically driven hole-spin Rabi oscillations in semiconductor self-assembled quantum dots (SAQDs). We report a device-level modeling workflow that integrates realistic SAQD geometry and multiband electronic-structure analysis with models of electrically driven spin control, interband optical transitions, and open-system dynamics. This workflow enables device-level estimation of Rabi-oscillation damping arising from repeated interband absorption-emission cycles. As an example, for a gated GaAs SAQD subjected to a uniform magnetic field $B_0$ along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At $B_0=2$ T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.

cond-mat.mes-hall↗
arXiv2026

First-principles predictions of band alignment in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures

Accurate band offsets are essential for predictive continuum modeling of nanostructures such as quantum wells and quantum dots formed in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures. Experimental offset data for these systems remain sparse away from endpoint compositions, making composition-dependent design difficult. We use atomistic first-principles density functional theory to compute valence- and conduction-band offsets across the full range 0 <= x <= 1. Random alloying is treated with special quasirandom structures, interface lineup terms are extracted from macroscopically averaged local Kohn-Sham potentials in thick periodic superlattices, valence-band spin-orbit coupling is included through species-resolved Mulliken weights, and conduction-band edges are refined using the screened hybrid Heyd-Scuseria-Ernzerhof functional. The resulting offsets show pronounced composition nonlinearity beyond the linear models explored in previous works, agree with experimental benchmarks, and reproduce the high-Ge slope change in the relaxed-alloy band gap. Analytic fitting expressions are provided for direct use in simulations, facilitating practical design of modern quantum technology devices.

cond-mat.mes-hall↗
arXiv2025

Constraints on Atomistic Disorder for Scalable Electron Spin Shuttling

Electron spin shuttling, the gate-controlled, coherent transport of electrons between qubit registers, increases qubit connectivity and enables efficient quantum-error-correction schemes. It is emerging as a key enabler of scalable silicon spin-qubit quantum computing. As an electron travels over micrometers, it encounters angstrom-scale disorder, causing fluctuations in its confinement potential, valley splitting, and valley phase. These lead to leakage into the valley-excited state, limiting high-fidelity shuttling speeds. Accurate predictions of shuttling fidelities thus require modeling tools that link atomistic and mesoscopic physics. We develop a multiscale simulation workflow to quantify these effects in the experimentally-realized Si/SiGe "QuBus" conveyor-belt architecture. First, we resolve the time-dependent, gate-controlled device electrostatics by solving the Poisson equation using the finite-element method. Second, we construct conveyor belt atomic structures with realistic atomistic disorder (random alloying and interface roughness); we resolve strain atomistically using the Keating valence force-field model. Third, we perform position-tracked atomistic tight-binding simulations of the shuttled electrons to obtain their time-dependent valley splittings and phases. Finally, these time traces parametrize a time-dependent Schr\"odinger equation, which we solve to predict valley dynamics. We find that interface roughness strongly suppresses shuttling fidelities, with a sharp anomaly near the atomic-layer scale. Overall, our predictions set practical, quantitative guidelines to realize scalable, high-fidelity shuttling in silicon spin-qubit architectures.

quant-ph↗
arXiv2022

Recent advances in hole-spin qubits

In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a rapid pace. We first review the main potential advantages of these hole-spin qubits with respect to their electron-spin counterparts, and give a general theoretical framework describing them. The basic features of spin-orbit coupling and hyperfine interaction in the valence band are discussed, together with consequences on coherence and spin manipulation. In the second part of the article we provide a survey of experimental realizations, which spans a relatively broad spectrum of devices based on GaAs, Si, or Si/Ge heterostructures. We conclude with a brief outlook.

cond-mat.mes-hall↗
arXiv2022

Approximate Network Motif Mining Via Graph Learning

Frequent and structurally related subgraphs, also known as network motifs, are valuable features of many graph datasets. However, the high computational complexity of identifying motif sets in arbitrary datasets (motif mining) has limited their use in many real-world datasets. By automatically leveraging statistical properties of datasets, machine learning approaches have shown promise in several tasks with combinatorial complexity and are therefore a promising candidate for network motif mining. In this work we seek to facilitate the development of machine learning approaches aimed at motif mining. We propose a formulation of the motif mining problem as a node labelling task. In addition, we build benchmark datasets and evaluation metrics which test the ability of models to capture different aspects of motif discovery such as motif number, size, topology, and scarcity. Next, we propose MotiFiesta, a first attempt at solving this problem in a fully differentiable manner with promising results on challenging baselines. Finally, we demonstrate through MotiFiesta that this learning setting can be applied simultaneously to general-purpose data mining and interpretable feature extraction for graph classification tasks.

cs.LG↗
arXiv2020

VeRNAl: Mining RNA Structures for Fuzzy Base Pairing Network Motifs

RNA 3D motifs are recurrent substructures, modelled as networks of base pair interactions, which are crucial for understanding structure-function relationships. The task of automatically identifying such motifs is computationally hard, and remains a key challenge in the field of RNA structural biology and network analysis. State of the art methods solve special cases of the motif problem by constraining the structural variability in occurrences of a motif, and narrowing the substructure search space. Here, we relax these constraints by posing the motif finding problem as a graph representation learning and clustering task. This framing takes advantage of the continuous nature of graph representations to model the flexibility and variability of RNA motifs in an efficient manner. We propose a set of node similarity functions, clustering methods, and motif construction algorithms to recover flexible RNA motifs. Our tool, VeRNAl can be easily customized by users to desired levels of motif flexibility, abundance and size. We show that VeRNAl is able to retrieve and expand known classes of motifs, as well as to propose novel motifs.

q-bio.MN↗
arXiv2020

Pseudospin-electric coupling for holes beyond the envelope-function approximation

In the envelope-function approximation, interband transitions produced by electric fields are neglected. However, electric fields may lead to a spatially local ($k$-independent) coupling of band (internal, pseudospin) degrees of freedom. Such a coupling exists between heavy-hole and light-hole (pseudo-)spin states for holes in III-V semiconductors, such as GaAs, or in group IV semiconductors (germanium, silicon, ...) with broken inversion symmetry. Here, we calculate the electric-dipole (pseudospin-electric) coupling for holes in GaAs from first principles. We find a transition dipole of $0.5$ debye, a significant fraction of that for the hydrogen-atom $1s\to2p$ transition. In addition, we derive the Dresselhaus spin-orbit coupling that is generated by this transition dipole for heavy holes in a triangular quantum well. A quantitative microscopic description of this pseudospin-electric coupling may be important for understanding the origin of spin splitting in quantum wells, spin coherence/relaxation ($T_2^*/T_1$) times, spin-electric coupling for cavity-QED, electric-dipole spin resonance, and spin non-conserving tunneling in double quantum dot systems.

cond-mat.mes-hall↗
arXiv2020

First-principles hyperfine tensors for electrons and holes in GaAs and silicon

Understanding (and controlling) hyperfine interactions in semiconductor nanostructures is important for fundamental studies of material properties as well as for quantum information processing with electron, hole, and nuclear-spin states. Through a combination of first-principles density-functional theory (DFT) and $\mathbf{k}\cdot\mathbf{p}$ theory, we have calculated hyperfine tensors for electrons and holes in GaAs and crystalline silicon. Accounting for relativistic effects near the nuclear core, we find contact hyperfine interactions for electrons in GaAs that are consistent with Knight-shift measurements performed on GaAs quantum wells and are roughly consistent with prior estimates extrapolated from measurements on InSb. We find that a combination of DFT and $\mathbf{k}\cdot\mathbf{p}$ theory is necessary to accurately determine the contact hyperfine interaction for electrons at a conduction-band minimum in silicon that is consistent with bulk Knight-shift measurements. For hole spins in GaAs, the overall magnitude of the hyperfine couplings we find from DFT is consistent with previous theory based on free-atom properties, and with heavy-hole Overhauser shifts measured in GaAs (and InGaAs) quantum dots. In addition, we theoretically predict that the heavy-hole hyperfine coupling to the As nuclear spins is stronger and almost purely Ising-like, while the (weaker) coupling to the Ga nuclear spins has significant non-Ising corrections. In the case of hole spins in silicon, we find (surprisingly) that the strength of the hyperfine interaction in the valence band is comparable to that in the conduction band and that the hyperfine tensors are highly anisotropic (Ising-like) in the heavy-hole subspace. These results suggest that the hyperfine coupling cannot be ruled out as a limiting mechanism for coherence ($T_2^{\ast}$) times recently measured for heavy holes in silicon quantum dots.

cond-mat.mes-hall↗
arXiv2019

Difficulty Scaling in Proof of Work for Decentralized Problem Solving

We propose DIPS Difficulty-based Incentives for Problem Solving), a simple modification of the Bitcoin proof-of-work algorithm that rewards blockchain miners for solving optimization problems of scientific interest. The result is a blockchain which redirects some of the computational resources invested in hash-based mining towards scientific computation, effectively reducing the amount of energy `wasted' on mining. DIPS builds the solving incentive directly in the proof-of-work by providing a reduction in block hashing difficulty when optimization improvements are found. A key advantage of this scheme is that decentralization is preserved and no additional protocol layers are required on top of the standard blockchain. We study two incentivization schemes and provide simulation results showing that DIPS is able to reduce the amount of hash-power used in the network while generating solutions to optimization problems.

cs.DC↗
arXiv2019

Hole-Spin-Echo Envelope Modulations

Hole spins in semiconductor quantum dots or bound to acceptor impurities show promise as potential qubits, partly because of their weak and anisotropic hyperfine couplings to proximal nuclear spins. Since the hyperfine coupling is weak, it can be difficult to measure. However, an anisotropic hyperfine coupling can give rise to a substantial spin-echo envelope modulation that can be Fourier-analyzed to accurately reveal the hyperfine tensor. Here, we give a general theoretical analysis for hole-spin-echo envelope modulation (HSEEM), and apply this analysis to the specific case of a boron-acceptor hole spin in silicon. For boron acceptor spins in unstrained silicon, both the hyperfine and Zeeman Hamiltonians are approximately isotropic leading to negligible envelope modulations. In contrast, in strained silicon, where light-hole spin qubits can be energetically isolated, we find the hyperfine Hamiltonian and $g$-tensor are sufficiently anisotropic to give spin-echo-envelope modulations. We show that there is an optimal magnetic-field orientation that maximizes the visibility of envelope modulations in this case. Based on microscopic estimates of the hyperfine coupling, we find that the maximum modulation depth can be substantial, reaching $\sim 10\%$, at a moderate laboratory magnetic field, $B\lesssim 200\,\mathrm{mT}$.

cond-mat.mes-hall↗